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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors

A model for charge trapping and impact ionization, and an experiment to measure these parameters is presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify the main sources of noise (bulk and surface charge leakage) in the measurements is also describe. This sets the stage to precisely measure the charge trapping and impact ionization probabilities in order to incorporate this model into future dark matter searches.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

A discussion on various experimental methods of impact ionization coefficient measurement in GaN

Impact ionization coefficients play a critical role in semiconductors. In addition to silicon, silicon carbide and gallium nitride are important semiconductors that are being seen more as mainstream semiconductor technologies. As a reflection of the maturity of these semiconductors, predictive modeling has become essential to device and circuit designers, and impact ionization coefficients play a key role here. Recently, several studies have measured impact ionization coefficients. We dedicated the first part of our study to comparing three experimental methods to estimate impact ionization coefficients in GaN, which are all based on photomultiplication but feature characteristic differences. The first method inserts an InGaN hole-injection layer, the accuracy of which is challenged by the dominance of ionization in InGaN, leading to possible overestimation of the coefficients. The second method utilizes the Franz–Keldysh effect for hole injection but not for electrons, where the mixed injection of induced carriers would require a margin of error. The third method uses complementary p–n and n–p structures that have been at the basis of this estimation in Si and SiC and leans on the assumption of a constant electric field, and any deviation would require a margin of error. In the second part of our study, we evaluated the models using recent experimental data from diodes demonstrating avalanche breakdown.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Electron impact ionization in dense plasmas

Here, the distorted-wave with exchange (DWE) method is employed to evaluate electron impact ionization cross sections in dense electron–ion plasmas. Bound and continuum electron wave functions are obtained from a non-relativistic average-atom code. Plots of DWE cross sections are presented for 1s electrons in Li and Be plasmas and 2p electrons in Na and Mg plasmas. For each of these elements, cross sections are evaluated at metallic density in a range of temperatures from 10 to 100 eV and at their respective melting points. Resonances in the cross sections appear near the incident energy threshold at high temperatures. The origin of these resonances is discussed. In general, the distorted wave (DW) method without exchange is found to be a good approximation to the DWE method for electron impact ionization calculations. In the resonance region, however, exchange effects are found to be very important and cannot be neglected.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2021

Electron-impact ionization of the Pb atom

Electron-impact ionization cross sections are calculated for the ground configuration of the Pb atom. Time-dependent close-coupling cross sections for the direct ionization of the 6 s and 6 p subshells leading to single ionization are calculated with and without a polarization potential. Configuration-average distorted-wave cross sections for the direct ionization of the 6 s and 6 p subshells leading to single ionization are also calculated with and without a polarization potential. We find the time-dependent close-coupling cross sections using a polarization potential to be in good agreement with convergent-close-coupling cross sections using a polarization potential. The total direct ionization cross sections are compared to two sets of experimental measurements. The differences between the direct ionization cross sections and the experimental measurements are mainly due to indirect ionization cross sections coming from the 6 s 2 6 p 2 → 6 s 6 p 3 excitation followed by autoionization..

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

Ultra‐Steep Slope Impact Ionization Transistors Based on Graphene/InAs Heterostructures

With the continued scaling of transistors, there is a growing trend for developing steep slope transistors with subthreshold swing (SS) below Boltzmann limitation ( k T/ q ). To this end, impact ionization metal oxide semiconductor (I‐MOS) transistors are attractive for a unique combination of high ON‐state current density, small hysteresis, and ultra‐steep SS slope. However, the performance of I‐MOS is generally limited by the relatively thick depletion region and large operation voltage required for the activation of impact ionization (typically >5 V). Herein, a high‐performance I‐MOS is constructed by van der Waals integrating single‐crystal InAs film with graphene. Due to the low bandgap of InAs as well as the semi‐metallic nature of graphene, the InAs/graphene I‐MOS demonstrates a low operation voltage of 1.5 V, high ON‐state current of 230 μA μm −1 , steep SS <0.6 mV dec −1 , and large ON–OFF ratio >10 6 at temperature below 200 K. Furthermore, a negative transconductance and steep current oscillation is observed in the subthreshold regime, and a device working mechanism is proposed for this novel phenomenon. This study not only pushes the performance limit of I‐MOS but also defines a general pathway to van der Waals heterostructures between conventional III–V compound semiconductors and novel 2D materials for unconventional device functions.

Liu, Yuan↗
DOE OSTI2020

Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors

A 0.93 g 1×1×0.4 cm 3 SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. In this work, the detector’s response under a variety of specific operating conditions was used to study the detector leakage current, charge trapping, and impact ionization in the high-purity Si substrate. The measured probabilities for a charge carrier in the detector to undergo charge trapping (0.713±0.093%) or cause impact ionization (1.576±0.110%) were found to be nearly independent of bias polarity and charge-carrier type (electron or hole) for substrate biases of ±140 V.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Electron-impact ionization from excited states method

We present a distorted-wave with exchange (DWE) formulation for computing electron-impact ionization (EII) cross sections within the recently developed excited states method (ESM) for plasmas. The ESM provides a self-consistent quantum-mechanical description of both bound and continuum electronic states in dense plasmas, incorporating finite-temperature and screening effects absent in isolated-atom approaches. Using this framework, we calculate EII cross sections for lithium across a wide range of temperatures and densities. We show that the ESM reproduces the isolated-atom limit at low densities while capturing strong plasma effects, such as pressure ionization and shape resonances, at solid density. Comparisons with isolated-atom DWE and average-atom (AA) calculations reveal that, although AA cross sections can approximate configuration average behavior, the ESM provides more accurate, state-resolved answers. In conclusion, these results demonstrate that the ESM allows one to obtain rate coefficients for collisional-radiative modeling of plasmas out of local thermodynamical equilibrium.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Simulating Electron Impact Ionization using a General Particle Tracer (GPT) Custom Element

A new C++ custom element has been developed with the framework of General Particle Tracer (GPT) to simulate electron impact ionization of residual gas molecules. The custom element uses Monte-Carlo routines to determine both the ion production rate and the secondary electron kinetic energy based on user-defined gas densities and theoretical values for the ionization cross section and the secondary electron differential cross section. It then uses relativistic kinematics to track the secondary electron, the scattered electron, and the newly formed ion after ionization. The ion production rate and the secondary electron energy distribution determined by the custom element have been benchmarked against theoretical calculations and against simulations made using the simulation package IBSimu. While the custom element was originally built for particle accelerator simulations, it is readily extensible to other applications. The custom element will be described in detail and examples of applications at the Thomas Jefferson National Accelerator Facility will be presented for ion production in a DC high voltage photo-gun.

Yoskowitz, J. T.↗
DOE OSTI2022

Microwave breakdown of sub-atmospheric argon gas in the vicinity of a microgap

The microwave electric field at breakdown for argon gas in a microgap (generally, gap size <1 mm) over a wide range of pressures and gap sizes was found to exhibit two behavioral pressure regimes. A high microwave electric field was established in the gap of a re-entrant mode resonator. By slowly raising the microwave electric field level, a breakdown level is reached where impact ionization induces low pressure argon gas to breakdown preferentially outside of the gap. At high pressure, breakdown is found to occur preferentially inside the gap, but only after the pressure is high enough for impact ionization to produce breakdown there. Impact ionization has a lower threshold electric field than the boundary-controlled processes, such as secondary electron emission, that would eventually produce breakdown inside the microgap if impact ionization did not occur first. Thus, the lower pressure regime is characterized by breakdown outside of the gap, while in the high-pressure regime, breakdown occurs inside the gap, in both cases by impact ionization. The transition pressure P T between these two pressure regimes depends on the gap size d gap , roughly as P T ∝ d gap –2 . Consistent with the model developed here, this corresponds to the full-amplitude of electron oscillation in the gap field being commensurate with the gap size.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Non-Markovian Hole Excess Noise in Avalanche Amorphous Selenium Thin Films

Enhancing the signal-to-noise ratio in avalanche photodiodes by utilizing impact ionization gain requires materials exhibiting low excess noise factors. Amorphous selenium (a-Se) as a wide bandgap at ~2.1 eV, a solid-state avalanche layer, demonstrates single-carrier hole impact ionization gain and manifests ultralow thermal generation rates. A comprehensive study of the history dependent and non-Markovian nature of hot hole transport in a-Se was modeled using a Monte Carlo (MC) random walk of single hole free flights, interrupted by instantaneous phonon, disorder, hole–dipole, and impact-ionization scattering interactions. The hole excess noise factors were simulated for 0.1–15 μm a-Se thin-films as a function of mean avalanche gain. The hole excess noise factors in a-Se decreases with an increase in electric field, impact ionization gain, and device thickness. The history dependent nature of branching of holes is explained using a Gaussian avalanche threshold distance distribution and the dead space distance, which increases determinism in the stochastic impact ionization process. An ultralow non-Markovian excess noise factor of ~1 was simulated for 100 nm a-Se thin films corresponding to avalanche gains of 1000. Future detector designs can utilize the nonlocal/non-Markovian nature of the hole avalanche in a-Se, to enable a true solid-state photomultiplier with noiseless gain.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Observation of time-dependent internal charge amplification in a planar germanium detector at cryogenic temperature

For the first time, time-dependent internal charge amplification through impact ionization has been observed in a planar germanium (Ge) detector operated at cryogenic temperature. In a time period of 30 and 45 min after applying a bias voltage, the charge energy corresponding to a baseline of the 59.54 keVγ rays from a 241 Am source is amplified for a short period of time and then decreases back to the baseline. The amplification of charge energy depends strongly on the applied positive bias voltage with drifting holes across the detector. No such phenomenon is visible with drifting electrons across the detector. We find that the observed charge amplification is dictated by the impact ionization of charged states, which has a strong correlation with impurity level and applied electric field. We analyze the dominant physics mechanisms that are responsible for the creation and the impact ionization of charged states. Our analysis suggests that the appropriate level of impurity in a Ge detector can enhance charge yield through the impact ionization of charged states to achieve extremely low-energy detection threshold (< 10 meV) for MeV-scale dark matter searches if the charge amplification can be stabilized.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Impacts of Ionizing Radiation on Sulfur Chloride Compounds for Advanced Fuel Cladding Decontamination Processes

Tripling the nation’s nuclear energy capacity is a critical component for significantly increasing energy production and reducing energy costs for American families and businesses. Achieving this vision requires fuel cycle technologies that maximize resource utilization while minimizing radioactive waste generation. Advanced sulfur chloride–based chlorination technologies are being developed to enable efficient recycling of fuel cladding materials, which account for a significant fraction of used nuclear fuel. However, the impacts of ionizing radiation on the longevity and performance of these sulfur chloride compounds are not well established. Here, we will explore the effects of gamma and electron-beam irradiation on the chemical composition of select sulfur chloride reagents, specifically sulfur monochloride (S2Cl2) and thionyl chloride (SOCl2), and the impacts of pre-irradiation on the chlorination yield/chemical dissolution of surrogate aluminum alloy 6061 (AA6061-T6) materials.

38 - RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCL↗
DOE OSTI2020

Impact of ionizing radiation on superconducting qubit coherence

The practical viability of any qubit technology stands on long coherence times and high-fidelity operations with the superconducting qubit modality being an auspicious example, However, superconducting qubit coherence is impacted by broken Cooper pairs referred to as quasiparticles, with a density that is empirically observed to be orders of magnitude greater than the value predicted for thermal equilibrium by the Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity. Previous work has shown that infrared photons significantly increase the quasiparticle density, yet even in the best isolated systems, it still remains higher than expected, suggesting that another generation mechanism exists. In this Letter, we provide evidence that ionizing radiation from environmental radioactive materials and cosmic rays contributes to this observed difference, leading to an elevated quasiparticle density that would ultimately limit superconducting qubits of the type measured here to coherence times in the millisecond regime. Additionally, we further demonstrate that introducing radiation shielding reduces the flux of ionizing radiation and positively correlates with increased coherence time. Albeit a small effect for today’s qubits, reducing or otherwise mitigating the impact of ionizing radiation will be critical for realizing fault-tolerant superconducting quantum computers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Impact of ionizing radiation on superconducting qubit coherence

The practical viability of any qubit technology stands on long coherence times and high-fidelity operations, with the superconducting qubit modality being a leading example. However, superconducting qubit coherence is impacted by broken Cooper pairs, referred to as quasiparticles, with a density that is empirically observed to be orders of magnitude greater than the value predicted for thermal equilibrium by the Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity. Previous work has shown that infrared photons significantly increase the quasiparticle density, yet even in the best isolated systems, it still remains higher than expected, suggesting that another generation mechanism exists. In this Letter, we provide evidence that ionizing radiation from environmental radioactive materials and cosmic rays contributes to this observed difference, leading to an elevated quasiparticle density that would ultimately limit superconducting qubits of the type measured here to coherence times in the millisecond regime. We further demonstrate that introducing radiation shielding reduces the flux of ionizing radiation and positively correlates with increased coherence time. Albeit a small effect for today’s qubits, reducing or otherwise mitigating the impact of ionizing radiation will be critical for realizing fault-tolerant superconducting quantum computers.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗