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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Analysis of implant loss risk factors after simultaneous guided bone regeneration: A retrospective study of 5404 dental implants

Abstract Purpose The purpose was to analyze the risk factors for implant loss after simultaneous guided bone regeneration (GBR). Materials and Methods Patients who underwent implant placement with simultaneous GBR between January 2011 and December 2018 were screened for this study. The cumulative survival rate (CSR) was calculated using the life table method. Log‐rank test and Kaplan–Meier survival estimates were used to identify potential risk factors for implant loss. The association between the investigated variables and implant loss was determined using hazard ratios (HRs) obtained from a multivariate Cox regression analysis. Results A total of 3973 patients with 5404 implants were included in this study. The CSRs of the implants at 1, 5, and 10 years were 99.6%, 98.9%, and 98.7%, respectively. Male patient (HR = 2.94, 95% CI: 1.41–6.14), periodontitis (HR = 4.26, 95% CI: 2.05–9.86), tissue‐level implants (HR = 3.02, 95% CI: 1.30–6.98), narrow implants (HR = 2.71, 95% CI: 1.12–6.57), and implant length ≤10 mm (HR = 2.91, 95% CI: 1.41–6.02) significantly increased the risk of implant loss ( p < 0.05). The risk of implant loss was significantly higher in the maxillary posterior region (HR = 2.26, 95% CI: 1.04–4.90) than in the maxillary anterior region ( p < 0.05). Compared to Straumann, Nobel (HR = 4.07, 95% CI: 1.75–9.44) and other implant systems (HR = 14.23, 95% CI: 4.32–46.85) showed a significantly higher risk of implant loss ( p < 0.05). Conclusion Male patient, periodontitis, maxillary posterior region, Nobel implant system, other implant systems, tissue‐level implants, narrow implants, and implant length ≤10 mm were considered risk factors for implant loss after simultaneous GBR.

Shen, Xiaoting↗
DOE OSTI2022

A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

It has been demonstrated that basal plane dislocations (BPDs)-induced stacking faults (SFs) cause body diode degradation in commercial 4H-SiC power MOSFETs, especially with higher voltage ratings. BPDs originate from 4H-SiC boule, epi growth, and ion implantation. Considering the lower cost of ion implantation at room temperature (RT), this work investigates the potential of RT ion implantation replacing heated (HT) ion implantation by comparing the influence of both ion implantations on the body diode degradation of commercial 3.3 kV 4H-SiC power MOSFETs. We demonstrate with long-term (up to 1000 hours) forward current stress that RT implantation can keep the body diode degradation of 3.3 kV 4H-SiC power MOSFETs within the specification limits compared with HT implantation.

4H-SiC↗
DOE OSTI2025

Influence of implantation temperature and He implantation-induced defects on morphological evolution of co-deposited Cu-Mo nanocomposites

Here, we investigate the effect of high-temperature helium (He) implantation on microstructural evolution in physical-vapor-co-deposited nanocomposite thin films of copper (Cu) and molybdenum (Mo). The microstructure morphologies of He-implanted and He-free domains are characterized using transmission electron microscopy and statistical analysis. High implantation temperatures (500°C and 750°C) lead to coarsening of Cu and Mo domains and their eventual reorientation. The microstructure evolution in He-implanted and He-free domains is comparable, indicating that implantation-induced defects do not accelerate the coarsening of the nanocomposite as compared to annealing alone. This observation contrasts with previously reported effects of implantation-induced defects on single-phase nanocrystalline metals, which include enhancement of grain growth by increasing self-diffusivity or its inhibition by pinning of grain boundaries.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Implantable photoelectronic charging (I-PEC) for medical implants

Medical implants with functionalities such as sensing, health monitoring, stimulation, diagnosis, and physiological treatment are rapidly growing. With the increasing functional sophistication and addition of modules such as data transmission, on-chip processing, and data storage, energy demand of the implantable system is also growing. Using implantable energy harvester either to recharge or ultimately replace hazardous battery is essential to provide a long-term sustainable solution. Furthermore, energy harvesting techniques using piezoelectric, thermoelectric, radio frequency power transmission, biofuel, and photoelectronic (or sometimes termed as “photovoltaic” in terms of solar light harvesting, i.e., PV) conversion, have been attempted for the implantable, but these methods are currently limited by insufficient power output, large footprint, and low efficiency. Nevertheless, the planar PV with potential of lighter weight, higher energy density, and higher efficiency, provides promising power solution for in-body medical implants. In this short review, we will discuss the potential opportunities and challenges associated with PV's for medical implants, covering materials, to devices, and to system level requirements.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2022

Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode

A high energy ion implantation system has been recently developed at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of multi-step, deep implantation in 4H-SiC wafers with dopant atoms, such as B, P, Al, and N. Medium and high voltage devices with deep junctions can be fabricated using this system. Lattice strain introduced by the implantation process needs to be recovered and dopant atoms activated by appropriate annealing process as the device performance is strongly associated with the extent of recovery of the lattice. Using Synchrotron X-ray Rocking Curve Topography (SXRCT) and Reciprocal Space Mapping (RSM), the strain induced by high energy implantation of Al and N in 4H-SiC in different patterns are measured and mapped. It is observed that the strain levels correlate with the total fluence levels. PiN diodes fabricated on these implanted wafers were then annealed at temperatures ranging from 1700 °C to 2000 °C for 60 min. The SXRCT and RSM analysis of the annealed samples suggests that for the same annealing duration, higher temperature leads to better lattice recovery.

43 PARTICLE ACCELERATORS↗
NASA NTRS1982

Xenon diffusion following ion implantation into feldspar - Dependence on implantation dose

The diffusion properties of xenon implanted into feldspar, a major mineral in meteorites and lunar samples, are investigated in light of the importance of xenon diffusion in the interpretation of early solar system chronologies and the retention time of solar-wind-implanted Xe. Known doses of Xe ions were implanted at an energy of 200 keV into single-crystal plagioclase targets, and depth profiles were measured by alpha particle backscattering before and after annealing for one hour at 900 or 1000 C. The fraction of Xe retained following annealing is found to be strongly dependent on implantation dose, being greatest at a dose of 3 x 10 to the 15th ions/sq cm and decreasing at higher and lower doses. Xe retention is also observed to be unaffected by two-step anneals, or by implantation with He or Ar. Three models of the dose-dependent diffusion properties are considered, including epitaxial crystal regrowth during annealing controlled by the extent of radiation damage, the creation of trapping sites by radiation damage, and the inhibition of recrystallization by Xe during annealing

Melcher, C. L.↗
NASA NTRS1982

Retention of ion-implanted-xenon in olivine: Dependence on implantation dose

The diffusion of Xe in olivine, a major mineral in both meteorites and lunar samples, was studied. Xe ions were implanted at 200 keV into single-crystal synthetic-forsterite targets and the depth profiles were measured by alpha particle backscattering before and after annealing for 1 hour at temperatures up to 1500 C. The fraction of implanted Xe retained following annealing was strongly dependent on the implantation dose. Maximum retention of 100% occurred for an implantion dose of 3 x 10 to the 15th power Xe ions/sq cm. Retention was less at lower doses, with (approximately more than or = 50% loss at one hundred trillion Xe ions/sq cm. Taking the diffusion coefficient at this dose as a lower limit, the minimum activation energy necessary for Xe retention in a 10 micrometer layer for ten million years was calculated as a function of metamorphic temperature.

Melcher, C. L.↗
DOE OSTI2023

Expandable implant and implant system

An embodiment of the invention includes an expandable implant to endovascularly embolize an anatomical void or malformation, such as an aneurysm. An embodiment is comprised of a chain or linked sequence of expandable polymer foam elements. Another embodiment includes an elongated length of expandable polymer foam coupled to a backbone. Another embodiment includes a system for endovascular delivery of an expandable implant (e.g., shape memory polymer) to embolize an aneurysm. The system may include a microcatheter, a lumen-reducing collar coupled to the distal tip of the microcatheter, a flexible pushing element detachably coupled to an expandable implant, and a flexible tubular sheath inside of which the compressed implant and pushing element are pre-loaded. Other embodiments are described herein.

Wilson, Thomas S.↗
NASA NTRS1993

Implantation of nitrogen: Effects of hydrogen and implantation energy

To solve the question on solar nitrogen in lunar soils, i.e. variation in isotopic composition and apparently high retentivity compared with rare gases, nitrogen implantation experiments were conducted. At the Meteoritical Society Meeting in Copenhagen, the results of stepped combustion of implanted nitrogen in ilmenite and olivine were presented. The degassing behavior of nitrogen (and also Ar) was quite different from that observed in the case of lunar soils. Extraction temperatures are higher (greater than 1100 C for ilmenite and 1500 C for olivine) than that for lunar soils. Both nitrogen and Ar seem to be retained at the same efficiency. Therefore, additional experiments were conducted to make degassing behavior of nitrogen more close to that observed in the case of lunar soils.

Sugiura, Naoji↗
NASA NTRSDate not supplied

The Genesis Non-flight Implant Sample Archive

Introduction: For the past 20 years the Genesis science community has been analyzing solar wind captured in sample collectors now curated at Johnson Space Center (JSC). Non-flown flight like collector materials (non-flight) considered reference material was always allocated by the JSC Genesis team for testing experimental procedures. However, to expedite Genesis science, distribution of non-flown reference materials were also provided by, D. S. Burnett (Genesis PI, Caltech) and A. J. G. Jurewicz (ASU) who were funded to aid all Genesis PIs by providing engineering test materials archived at Caltech pre-flight as well as ion implants into these materials [1]. Implanted materials (non-flight reference, flight-like semiconductor materials, and NIST SRM glass) received from the Caltech collection during a pilot project are being used to develop an accession procedure for the purpose of making these materials available to researchers in the future. These implant samples are important because they can be utilized as measurement standards [2]. This is a work in progress and this work reports progress in documentation and imaging. The pilot program received 63 implanted reference materials with known implanted ions. Genesis Non-Flight Database: The existing non-flight material database was modified to allow for the description of implant sessions and to allow correlation of the implant information to individual specimens. An implant session has three main components: a known ion, a known dose (ion/cm2), and a known energy (keV). Procedure: Laboratory Procedure. Upon receiving non-flight analytical standards (independently calibrated implants), or implant samples (nominally calibrated implants), they will be imaged in their current containers to capture any information written before being brought into the Genesis Sample Laboratory. Documentation is provided by the donor and used for correlating the data between the implant sessions and implant samples. This information is not verified by Genesis Curation. The microscope used to image samples in the laboratory has an automated stage with a stainless-steel plate to hold samples and a camera that utilizes the software Surveyor to take photomosaic images of the implant samples. The camera attached to the microscope is a QICAM High Performance IEEE 1394 FireWire Digital CCD Camera. This setup, shown in Fig. 1, allows for photomosaics of small-scale samples with a 10x objective or 25x objective. Examples of images taken with this microscope setup are shown in Fig.2 and Fig. 3. After imaging, samples get stored in a clean fluoroware container or polypropylene vial depending on sample size for long term storage. Database Procedure. The Genesis Non-Flight Database currently allows for the addition of implant sessions. The required fields for adding an implant session are the implant session ion, the implant session dose, and the implant session energy. There are also fields for the date and vendor of the sessions as well as a field for if the session was calibrated or not. Once an implant session has been inserted into the database, additional documentation from the session can be attached. The database will automatically assign an Implant Session Number. After inserting an implant session, the implanted samples can be inserted. The fields required for an implant sample are the material of the sample and the size of the sample. The Generic name for the implant sample with be automatically generated by the database once it has been inserted. Implant sample numbers begin with 3X to distinguish from flown Genesis sample numbers. There are also fields for processors to add the location (room, cabinet, tray) and container type (fluoroware, polypropylene vial). Once an implant session and an associated sample(s) have been inserted into the database the sample can be then tied to all associated implant sessions. An implant sample can be tied to multiple implant sessions. Future work: For curation, future work consists of creating an online catalogue for implant samples as well as updating the database with more samples as we receive them. For the scientific community these implant samples have many potential uses. For Genesis research, they are directly applicable for testing and, in some cases, as analytical standards. For non-Genesis research, implants (especially calibrated implants) could be used for calibrating other, unique planetary materials [1].

C D Calva↗
DOE OSTI2023

Depth profiling and standardization from the back side of a sample for accurate analyses: Emphasis on quantifying low‐fluence, shallow implants in diamond‐like carbon

Rationale Back‐side thinning of wafers is used to eliminate issues with transient sputtering when analyzing near‐surface element distributions. Precise and accurate calibrated implants are created by including a standard reference material during the implantation. Combining these methods allows accurate analysis of low‐fluence, shallow features even if matrix effects are a concern. Methods Implanted Na (<2.0 × 10 11 ions/cm 2 , peaking <50 nm) in diamond‐like carbon (DLC) film on silicon (solar wind returned by NASA's Genesis mission) was prepared for measurement as follows. Implanted surfaces of samples were epoxied to wafers and back‐side‐thinned using physical or chemical methods. Thinned samples were then implanted with reference ions for accurate quantification of the solar wind implant. Analyses used a CAMECA IMS 7f‐GEO SIMS in depth‐profiling mode. Results Back‐side‐implanted reference ions reduced the need to change sample mounts or stage position and could be spatially separated from the solar wind implant even when measuring monoisotopic ions. Matrix effects in DLC were mitigated and the need to find an identical piece of DLC for a reference implant was eliminated. Accuracy was only limited by the back‐side technique itself. Conclusions Combining back‐side depth profiling with back‐side‐implanted internal standards aides quantification of shallow mono‐ and polyisotopic implants. This technique helps mitigate matrix effects and keeps measurement conditions consistent. Depth profile acquisition times are longer, but if sample matrices are homogeneous, procedural changes can decrease measurement times.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Ion implantation of magnesium guests into type II silicon clathrate films: an alternate approach to doping a cage-like silicon allotrope

Type II silicon clathrates, with their unique cage-like structure, offer exciting potential for applications in thermoelectrics, photovoltaics, and quantum materials due to their tunable electronic and thermal properties. This study investigates the use of ion implantation to introduce targeted guest atoms, which act as dopants, into type II Si clathrate films. The focus is on Mg as a test case for implantation, a dopant previously unreported in type II Si clathrates. The effects of ion implantation on the metastable Si clathrate structure were examined through systematic investigation of implant parameters. Time-of-flight secondary ion mass spectrometry depth profiling confirmed the successful implantation of Mg, while X-ray diffraction and confocal Raman spectroscopy demonstrated minimal structural damage at lower fluences, with the clathrate framework retaining its integrity without converting to other phases. At the higher end of the fluence range implantation caused localized transitions from clathrate to amorphous silicon. Implant activation using rapid thermal annealing was examined with the clathrate structure stable up to 500 °C and being converted to diamond silicon above this temperature. Post-implantation and activation structural characterization showed evidence of damage reversal. Electron paramagnetic resonance studies provided indirect evidence of dopant incorporation. These findings establish a foundation for introducing alternative guests/dopants into the Si clathrate cages through ion implantation, advancing their tunability for next-generation quantum and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Analysis of strain in ion implanted 4H-SiC by fringes observed in synchrotron X-ray topography

A novel high energy implantation system has been successfully developed to fabricate 4H-SiC superjunction devices for medium and high voltage via implantation of dopant atoms with multi-energies ranging from 13 to 66 MeV. The significantly higher levels of energy used compared to conventional implantation processes, necessitates detailed characterization of the lattice damage caused by implantation. To achieve this by employing the novel high energy system, 4H-SiC wafer with 12 μm epilayers were blanket implanted by 13.8–65.7 MeV Al atoms. The lattice damages induced by the implantation were primarily characterized by Synchrotron X-ray Plane Wave Topography (SXPWT) and Reciprocal Space Mapping (RSM). Topographs reveal fringe contrast akin to multiple asymmetric diffraction peaks with an angular separation of only 2″ (arcseconds) observed on rocking curves, indicating inhomogeneous strain distribution across the implanted layer. The strain profile of the implanted layer was extracted from the fringe contrast by applying Rocking-curve Analysis by Dynamical Simulation (RADS). In conclusion, the maximum strain value is similar to that measured on the RSM.

A1. Characterization↗
NASA NTRS1998

Study of the effects of MeV Ag, Cu, Au, and Sn implantation on the optical properties of LiNbO3

The authors present the results of characterization of linear absorption and nonlinear refractive index of Au, Ag, Cu and Sn ion implantation into LiNbO3. Ag was implanted at 1.5 MeV to fluences of 2 to 17 x 17(exp 16)/sq cm at room temperature. Au and Cu were implanted to fluences of 5 to 20 x 10(exp 16)/sq cm at an energy of 2.0 MeV. Sn was implanted to a fluence of 1.6 x 10(exp 17)/sq cm at 160 kV. Optical absorption spectrometry indicated an absorption peak for the Au implanted samples after heat treatment at 1,000 C at approx. 620 nm. The Ag implanted samples absorption peaks shifted from approx. 450 nm before heat treatment to 550 nm after 500 C for 1h. Heat treatment at 800 C returned the Ag implanted crystals to a clear state. Cu nanocluster absorption peaks disappears at 500 C. No Sn clusters were observed by optical absorption or XRD. The size of the Ag and Au clusters as a function of heat treatment were determined from the absorption peaks. The Ag clusters did not change appreciably in size with heat treatment. The Au clusters increased from 3 to 9 nm diameter upon heat treatment at 1000 C. TEM analysis performed on a Au implanted crystal indicated the formation of Au nanocrystals with facets normal to the c-axis. Measurements of the nonlinear refractive indices were carried out using the Z-scan method with a tunable dye laser pumped by a frequency doubled mode-locked Nd:YAG laser. The dye laser had a 4.5 ps pulse duration time and 76 MHz pulse repetition rate (575 nm).

Williams, E. K.↗
NASA NTRS2006

Neuro-Prosthetic Implants With Adjustable Electrode Arrays

Brushlike arrays of electrodes packaged with application-specific integrated circuits (ASICs) are undergoing development for use as electronic implants especially as neuro-prosthetic devices that might be implanted in brains to detect weak electrical signals generated by neurons. These implants partly resemble the ones reported in Integrated Electrode Arrays for Neuro-Prosthetic Implants (NPO-21198), NASA Tech Briefs, Vol. 27, No. 2 (February 2003), page 48. The basic idea underlying both the present and previously reported implants is that the electrodes would pick up signals from neurons and the ASICs would amplify and otherwise preprocess the signals for monitoring by external equipment. The figure presents a simplified and partly schematic view of an implant according to the present concept. Whereas the electrodes in an implant according to the previously reported concept would be microscopic wires, the electrodes according to the present concept are in the form of microscopic needles. An even more important difference would be that, unlike the previously reported concept, the present concept calls for the inclusion of microelectromechanical actuators for adjusting the depth of penetration of the electrodes into brain tissue. The prototype implant now under construction includes an array of 100 electrodes and corresponding array of electrode contact pads formed on opposite faces of a plate fabricated by techniques that are established in the art of microelectromechanical systems (MEMS). A mixed-signal ASIC under construction at the time of reporting the information for this article will include 100 analog amplifier channels (one amplifier per electrode). On one face of the mixed-signal ASIC there will be a solder-bump/micro-pad array that will have the same pitch as that of the electrode array, and that will be used to make the electrical and mechanical connections between the electrode array and the ASIC. Once the electrode array and the ASIC are soldered together, the remaining empty space between them will be filled with a biocompatible epoxy, the remaining exposed portions of the ASIC will be covered with micromachined plates for protection against corrosive bodily fluids, and then the ASIC and its covering micromachined plates will be coated with parylene

Whitacre, Jay↗
DOE OSTI2024

Ion Implantation-Induced Plastic Phenomena in Metallic Alloys

Ion implantation is widely used for doping semiconductors or electroceramic materials and probing material behaviors in extreme radiation environments. However, implanted ions can induce compressive stresses into the host material, which can induce plasticity and mesoscopic deformation. However, these phenomena have almost exclusively been observed in brittle ionic and/or covalently bonded materials. Here, in this study, we present transmission electron microscopy observations of unusual implantation-induced plasticity in two metallic alloys. First, Fe 2+ ions induce dislocation plasticity below the implanted layer in a model Fe-P alloy. Next, He+ ions form pressurized cavities which activate the fcc-to-hcp strain-induced martensitic transformation in Alloy 625. In both cases, the plasticity can be explained by a combination of implanted ions being incorporated into the lattice and the creation of irradiation defects. These findings have significant implications for mechanical testing of ion-implanted layers, while also opening pathways for using ion implantation to tune stress distributions in metallic alloys.

36 MATERIALS SCIENCE↗