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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Xenon diffusion following ion implantation into feldspar - Dependence on implantation dose

The diffusion properties of xenon implanted into feldspar, a major mineral in meteorites and lunar samples, are investigated in light of the importance of xenon diffusion in the interpretation of early solar system chronologies and the retention time of solar-wind-implanted Xe. Known doses of Xe ions were implanted at an energy of 200 keV into single-crystal plagioclase targets, and depth profiles were measured by alpha particle backscattering before and after annealing for one hour at 900 or 1000 C. The fraction of Xe retained following annealing is found to be strongly dependent on implantation dose, being greatest at a dose of 3 x 10 to the 15th ions/sq cm and decreasing at higher and lower doses. Xe retention is also observed to be unaffected by two-step anneals, or by implantation with He or Ar. Three models of the dose-dependent diffusion properties are considered, including epitaxial crystal regrowth during annealing controlled by the extent of radiation damage, the creation of trapping sites by radiation damage, and the inhibition of recrystallization by Xe during annealing

Melcher, C. L.↗
NASA NTRS1982

Retention of ion-implanted-xenon in olivine: Dependence on implantation dose

The diffusion of Xe in olivine, a major mineral in both meteorites and lunar samples, was studied. Xe ions were implanted at 200 keV into single-crystal synthetic-forsterite targets and the depth profiles were measured by alpha particle backscattering before and after annealing for 1 hour at temperatures up to 1500 C. The fraction of implanted Xe retained following annealing was strongly dependent on the implantation dose. Maximum retention of 100% occurred for an implantion dose of 3 x 10 to the 15th power Xe ions/sq cm. Retention was less at lower doses, with (approximately more than or = 50% loss at one hundred trillion Xe ions/sq cm. Taking the diffusion coefficient at this dose as a lower limit, the minimum activation energy necessary for Xe retention in a 10 micrometer layer for ten million years was calculated as a function of metamorphic temperature.

Melcher, C. L.↗
NASA NTRS1993

Implantation of nitrogen: Effects of hydrogen and implantation energy

To solve the question on solar nitrogen in lunar soils, i.e. variation in isotopic composition and apparently high retentivity compared with rare gases, nitrogen implantation experiments were conducted. At the Meteoritical Society Meeting in Copenhagen, the results of stepped combustion of implanted nitrogen in ilmenite and olivine were presented. The degassing behavior of nitrogen (and also Ar) was quite different from that observed in the case of lunar soils. Extraction temperatures are higher (greater than 1100 C for ilmenite and 1500 C for olivine) than that for lunar soils. Both nitrogen and Ar seem to be retained at the same efficiency. Therefore, additional experiments were conducted to make degassing behavior of nitrogen more close to that observed in the case of lunar soils.

Sugiura, Naoji↗
NASA NTRSDate not supplied

The Genesis Non-flight Implant Sample Archive

Introduction: For the past 20 years the Genesis science community has been analyzing solar wind captured in sample collectors now curated at Johnson Space Center (JSC). Non-flown flight like collector materials (non-flight) considered reference material was always allocated by the JSC Genesis team for testing experimental procedures. However, to expedite Genesis science, distribution of non-flown reference materials were also provided by, D. S. Burnett (Genesis PI, Caltech) and A. J. G. Jurewicz (ASU) who were funded to aid all Genesis PIs by providing engineering test materials archived at Caltech pre-flight as well as ion implants into these materials [1]. Implanted materials (non-flight reference, flight-like semiconductor materials, and NIST SRM glass) received from the Caltech collection during a pilot project are being used to develop an accession procedure for the purpose of making these materials available to researchers in the future. These implant samples are important because they can be utilized as measurement standards [2]. This is a work in progress and this work reports progress in documentation and imaging. The pilot program received 63 implanted reference materials with known implanted ions. Genesis Non-Flight Database: The existing non-flight material database was modified to allow for the description of implant sessions and to allow correlation of the implant information to individual specimens. An implant session has three main components: a known ion, a known dose (ion/cm2), and a known energy (keV). Procedure: Laboratory Procedure. Upon receiving non-flight analytical standards (independently calibrated implants), or implant samples (nominally calibrated implants), they will be imaged in their current containers to capture any information written before being brought into the Genesis Sample Laboratory. Documentation is provided by the donor and used for correlating the data between the implant sessions and implant samples. This information is not verified by Genesis Curation. The microscope used to image samples in the laboratory has an automated stage with a stainless-steel plate to hold samples and a camera that utilizes the software Surveyor to take photomosaic images of the implant samples. The camera attached to the microscope is a QICAM High Performance IEEE 1394 FireWire Digital CCD Camera. This setup, shown in Fig. 1, allows for photomosaics of small-scale samples with a 10x objective or 25x objective. Examples of images taken with this microscope setup are shown in Fig.2 and Fig. 3. After imaging, samples get stored in a clean fluoroware container or polypropylene vial depending on sample size for long term storage. Database Procedure. The Genesis Non-Flight Database currently allows for the addition of implant sessions. The required fields for adding an implant session are the implant session ion, the implant session dose, and the implant session energy. There are also fields for the date and vendor of the sessions as well as a field for if the session was calibrated or not. Once an implant session has been inserted into the database, additional documentation from the session can be attached. The database will automatically assign an Implant Session Number. After inserting an implant session, the implanted samples can be inserted. The fields required for an implant sample are the material of the sample and the size of the sample. The Generic name for the implant sample with be automatically generated by the database once it has been inserted. Implant sample numbers begin with 3X to distinguish from flown Genesis sample numbers. There are also fields for processors to add the location (room, cabinet, tray) and container type (fluoroware, polypropylene vial). Once an implant session and an associated sample(s) have been inserted into the database the sample can be then tied to all associated implant sessions. An implant sample can be tied to multiple implant sessions. Future work: For curation, future work consists of creating an online catalogue for implant samples as well as updating the database with more samples as we receive them. For the scientific community these implant samples have many potential uses. For Genesis research, they are directly applicable for testing and, in some cases, as analytical standards. For non-Genesis research, implants (especially calibrated implants) could be used for calibrating other, unique planetary materials [1].

C D Calva↗
NASA NTRS1998

Study of the effects of MeV Ag, Cu, Au, and Sn implantation on the optical properties of LiNbO3

The authors present the results of characterization of linear absorption and nonlinear refractive index of Au, Ag, Cu and Sn ion implantation into LiNbO3. Ag was implanted at 1.5 MeV to fluences of 2 to 17 x 17(exp 16)/sq cm at room temperature. Au and Cu were implanted to fluences of 5 to 20 x 10(exp 16)/sq cm at an energy of 2.0 MeV. Sn was implanted to a fluence of 1.6 x 10(exp 17)/sq cm at 160 kV. Optical absorption spectrometry indicated an absorption peak for the Au implanted samples after heat treatment at 1,000 C at approx. 620 nm. The Ag implanted samples absorption peaks shifted from approx. 450 nm before heat treatment to 550 nm after 500 C for 1h. Heat treatment at 800 C returned the Ag implanted crystals to a clear state. Cu nanocluster absorption peaks disappears at 500 C. No Sn clusters were observed by optical absorption or XRD. The size of the Ag and Au clusters as a function of heat treatment were determined from the absorption peaks. The Ag clusters did not change appreciably in size with heat treatment. The Au clusters increased from 3 to 9 nm diameter upon heat treatment at 1000 C. TEM analysis performed on a Au implanted crystal indicated the formation of Au nanocrystals with facets normal to the c-axis. Measurements of the nonlinear refractive indices were carried out using the Z-scan method with a tunable dye laser pumped by a frequency doubled mode-locked Nd:YAG laser. The dye laser had a 4.5 ps pulse duration time and 76 MHz pulse repetition rate (575 nm).

Williams, E. K.↗
NASA NTRS2006

Neuro-Prosthetic Implants With Adjustable Electrode Arrays

Brushlike arrays of electrodes packaged with application-specific integrated circuits (ASICs) are undergoing development for use as electronic implants especially as neuro-prosthetic devices that might be implanted in brains to detect weak electrical signals generated by neurons. These implants partly resemble the ones reported in Integrated Electrode Arrays for Neuro-Prosthetic Implants (NPO-21198), NASA Tech Briefs, Vol. 27, No. 2 (February 2003), page 48. The basic idea underlying both the present and previously reported implants is that the electrodes would pick up signals from neurons and the ASICs would amplify and otherwise preprocess the signals for monitoring by external equipment. The figure presents a simplified and partly schematic view of an implant according to the present concept. Whereas the electrodes in an implant according to the previously reported concept would be microscopic wires, the electrodes according to the present concept are in the form of microscopic needles. An even more important difference would be that, unlike the previously reported concept, the present concept calls for the inclusion of microelectromechanical actuators for adjusting the depth of penetration of the electrodes into brain tissue. The prototype implant now under construction includes an array of 100 electrodes and corresponding array of electrode contact pads formed on opposite faces of a plate fabricated by techniques that are established in the art of microelectromechanical systems (MEMS). A mixed-signal ASIC under construction at the time of reporting the information for this article will include 100 analog amplifier channels (one amplifier per electrode). On one face of the mixed-signal ASIC there will be a solder-bump/micro-pad array that will have the same pitch as that of the electrode array, and that will be used to make the electrical and mechanical connections between the electrode array and the ASIC. Once the electrode array and the ASIC are soldered together, the remaining empty space between them will be filled with a biocompatible epoxy, the remaining exposed portions of the ASIC will be covered with micromachined plates for protection against corrosive bodily fluids, and then the ASIC and its covering micromachined plates will be coated with parylene

Whitacre, Jay↗
NASA NTRS1980

Low-cost ion implantation and annealing technology for solar cells

Ion implantation and thermal annealing techniques for processing junctions and back surface layers in solar cells are discussed. Standard 10 keV (31)p(+) junction implants and 25 keV (11)B(+) back surface implants in combination with three-step furnace annealing are used for processing a range of silicon materials and device structures. Cells with efficiencies up to 16.5% AM1 are being produced, and large-area terrestrial cells with implanted junctions and back fields being fabricated in pilot production exhibit average efficiencies in excess of 15% AM1. Thermal annealing methods for removal of the radiation damage caused by implantation should be replaced by transient processing techniques in future production. Design studies have been completed for solar cell processing implanters to support 10 MW/yr and 100 MW/yr production lines, and analyses indicate that implantation costs can be reduced to approximately 1 cent/watt.

Kirkpatrick, A. H.↗
NASA NTRS1986

Shock-implanted noble gases - An experimental study with implications for the origin of Martian gases in shergottite meteorites

The shock-implantation of gases is studied by artificially shocking whole rock and power samples of terrestrial basalt to pressures of 2-40 GPa. Ar, Kr, Xe, and Ne were implanted into the silicate. It is observed that the amount of implanted gas is linearly proportional to its partial pressure over a pressure range of 0.0001 to 0.1 atmosphere. The fractionation effect in the implanted gas and the gas diffusion properties are examined. The amounts of gas that would have been implanted with 100 percent efficiency are calculated from the measured porosities of the power samples and are compared to observed abundances. It is determined that the implantation efficiencies are approximately 0.5 percent at 2 GPa, 7 percent at 5 GPa, and greater than 50 percent at both 20 and 35 GPa. The experimental data correlate with the shock implantation of Martian gases without mass fractionation into the shock-melted phase of meteorite EETA 79001.

Bogard, Donald D.↗
NASA NTRS1994

Biotelemetry implant volume and weight in rats: A pilot study report

This paper reports the results of a pilot study in which a 240-gram rat was implanted for 41 days with biotelemetry devices weighing a total of 36 gm (18 cc). The implanted animal showed no differences in weight gain, food and water consumption, and postnecropsy organ weights when compared to both an unoperated control animal and an animal that underwent surgery but did not receive an implant. The implanted animal also had temperature and activity rhythms similar to those reported using much smaller implants. Thus, this pilot study showed that a 240-gm rat could be implanted with biotelemetry devices weighing nearly 15 percent of body weight without significant changes in health or behavior. A larger study involving more animals and similar implant sizes is recommended.

Somps, Chris J.↗
NASA NTRS1994

Physical and Tribological Characteristics of Ion-Implanted Diamond Films

Unidirectional sliding friction experiments were conducted with a natural, polished diamond pin in contact with both as-deposited and carbon-ion-implanted diamond films in ultrahigh vacuum. Diamond films were deposited on silicon, silicon carbide, and silicon nitride by microwave-plasma-assisted chemical vapor deposition. The as-deposited diamond films were impacted with carbon ions at an accelerating energy of 60 keV and a current density of 50 micron A/cm(exp 2) for approximately 6 min, resulting in a dose of 1.2 x 10(exp 17) carbon ions/cm(exp 2). The results indicate that the carbon ion implantation produced a thin surface layer of amorphous, nondiamond carbon. The nondiamond carbon greatly decreased both friction and wear of the diamond films. The coefficients of friction for the carbon-ion-implanted, fine-grain diamond films were less than 0.1, factors of 20 to 30 lower than those for the as-deposited, fine-grain diamond films. The coefficients of friction for the carbon-ion-implanted, coarse-grain diamond films were approximately 0.35, a factor of five lower than those for the as-deposited, coarse-grain diamond films. The wear rates for the carbon-ion-implanted, diamond films were on the order of 10(exp -6) mm(exp 3)/Nm, factors of 30 to 80 lower than that for the as-deposited diamond films, regardless of grain size. The friction of the carbon-ion-implanted diamond films was greatly reduced because the amorphous, nondiamond carbon, which had a low shear strength, was restricted to the surface layers (less than 0.1 micron thick) and because the underlying diamond materials retained their high hardness. In conclusion, the carbon-ion-implanted, fine-grain diamond films can be used effectively as wear resistant, self-lubricating coatings for ceramics, such as silicon nitride and silicon carbide, in ultrahigh vacuum.

Miyoshi, K.↗
NASA NTRS1978

Production technology for high efficiency ion implanted solar cells

Ion implantation is being developed for high volume automated production of silicon solar cells. An implanter designed for solar cell processing and able to properly implant up to 300 4-inch wafers per hour is now operational. A machine to implant 180 sq m/hr of solar cell material has been designed. Implanted silicon solar cells with efficiencies exceeding 16% AM1 are now being produced and higher efficiencies are expected. Ion implantation and transient processing by pulsed electron beams are being integrated with electrostatic bonding to accomplish a simple method for large scale, low cost production of high efficiency solar cell arrays.

Kirkpatrick, A. R.↗
NASA NTRS1980

A study of the factors which control the efficiency of ion-implanted silicon solar cells

The objective of this work was to determine experimentally the ion-implantation parameters and furnace annealing conditions required to produce high-efficiency solar cells. A comprehensive experimental study was conducted in which the optimum ion-implantation parameters were found by a systematic variation of the implant parameters followed by detailed studies of solar-cell devices. Two furnace heat-treatment techniques were found which effectively anneal the implanted layers and at the same time preserve or improve the diffusion length in the bulk silicon. Detailed characteristics of both the junction and bulk properties of solar cells fabricated over the spectrum of implant parameters are discussed. Optimized implant parameters and annealing conditions were found which allow for the fabrication of 14-15-percent (AM1) efficient solar cells.

Douglas, E. C.↗
NASA NTRS1981

Ion implantation of solar cell junctions without mass analysis

This paper is a summary of an investigation to determine the feasibility of producing solar cells by means of ion implantation without the use of mass analysis. Ion implants were performed using molecular and atomic phosphorus produced by the vaporization of solid red phosphorus and ionized in an electron bombardment source. Solar cell junctions were ion implanted by mass analysis of individual molecular species and by direct unanalyzed implants from the ion source. The implant dose ranged from 10 to the 14th to 10 to the 16th atoms/sq cm and the energy per implanted atom ranged from 5 KeV to 40 KeV in this study.

Fitzgerald, D.↗
NASA NTRS1984

High Curie temperature drive layer materials for ion-implanted magnetic bubble devices

Ion implantation of bubble garnets can lower the Curie temperature by 70 C or more, thus limiting high temperature operation of devices with ion-implanted propagation patterns. Therefore, double-layer materials were made with a conventional 2-micron bubble storage layer capped by an ion-implantable drive layer of high Curie temperature, high magnetostriction material. Contiguous disk test patterns were implanted with varying doses of a typical triple implant. Quality of propagation was judged by quasistatic tests on 8-micron period major and minor loops. Variations of magnetization, uniaxial anisotropy, implant dose, and magnetostriction were investigated to ensure optimum flux matching, good charged wall coupling, and wide operating margins. The most successful drive layer compositions were in the systems (SmDyLuCa)3(FeSi)5O12 and (BiGdTmCa)3(FeSi)5O12 and had Curie temperatures 25-44 C higher than the storage layers.

Fratello, V. J.↗
NASA NTRS1986

Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.

Rohatgi, A.↗
NASA NTRS1986

Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells

The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.

Fonash, S. J.↗
NASA NTRS1999

The Biolink Implantable Telemetry System

Most biotelemetry applications deal with the moderated data rates of biological signals. Few people have studied the problem of transcutaneous data transmission at the rates required by NASA's Life Sciences-Advanced BioTelemetry System (LS-ABTS). Implanted telemetry eliminate the problems associated with wire breaking the skin, and permits experiments with awake and unrestrained subjects. Our goal is to build a low-power 174-216MHz Radio Frequency (RF) transmitter suitable for short range biosensor and implantable use. The BioLink Implantable Telemetry System (BITS) is composed of three major units: an Analog Data Module (ADM), a Telemetry Transmitter Module (TTM), and a Command Receiver Module (CRM). BioLink incorporates novel low-power techniques to implement a monolithic digital RF transmitter operating at 100kbps, using quadrature phase shift keying (QPSK) modulation in the 174-216MHz ISM band. As the ADM will be specific for each application, we focused on solving the problems associated with a monolithic implementation of the TTM and CRM, and this is the emphasis of this report. A system architecture based on a Frequency-Locked Loop (FLL) Frequency Synthesizer is presented, and a novel differential frequency that eliminates the need for a frequency divider is also shown. A self sizing phase modulation scheme suitable for low power implementation was also developed. A full system-level simulation of the FLL was performed and loop filter parameters were determined. The implantable antenna has been designed, simulated and constructed. An implant package compatible with the ABTS requirements is also being proposed. Extensive work performed at 200MHz in 0.5um complementary metal oxide semiconductors (CMOS) showed the feasibility of integrating the RF transmitter circuits in a single chip. The Hajimiri phase noise model was used to optimize the Voltage Controlled Oscillator (VCO) for minimum power consumption. Two test chips were fabricated in a 0.5pm, 3V CMOS process. Measured phase noise for a 1.5mW, 200MHz ring oscillator VCO is -80dBc/Hz at 100KHZ offset, showing good agreement with the theory. We also propose a novel superregenerative receiver architecture for implementing the command receiver. The superregenerative receiver's simplicity, low cost, and low power consumption has made it the receiver of choice for short-distance data communications, remote control and home automation. We present the design of a superregenerative AM receiver implemented in a 0.5um CMOS technology that operates at 433.92MHz and dissipates only 300uW. Further work entails detailed transistor-level design of the FLL and superregenerative receiver and a monolithic implementation of an implantable transceiver in 0.5um CMOS technology.

Betancourt-Zamora, Rafael J.↗
NASA NTRS1998

Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

Ion implantation has been shown to produce a high density of metal colloids within the layer regions of glasses and crystalline materials. The high-precipitate volume fraction and small size of metal nanoclusters formed leads to values for the third-order susceptibility much greater than those for metal doped solids. This has stimulated interest in use of ion implantation to make nonlinear optical materials. On the other side, LiNbO3 has proved to be a good material for optical waveguides produced by MeV ion implantation. Light confinement in these waveguides is produced by refractive index step difference between the implanted region and the bulk material. Implantation of LiNbO3 with MeV metal ions can therefore result into nonlinear optical waveguide structures with great potential in a variety of device applications. We describe linear and nonlinear optical properties of a waveguide structure in LiNbO3-based composite material produced by silver ion implantation in connection with mechanisms of its formation.

Sarkisov, S.↗