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Results for “impurity scattering”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Dyakonov-Perel Effect on Spin Dephasing in n-Type GaAs

A paper presents a study of the contribution of the Dyakonov-Perel (DP) effect to spin dephasing in electron-donor-doped bulk GaAs in the presence of an applied steady, moderate magnetic field perpendicular to the growth axis of the GaAs crystal. (The DP effect is an electron-wave-vector-dependent spin-state splitting of the conduction band, caused by a spin/orbit interaction in a crystal without an inversion center.) The applicable Bloch equations of kinetics were constructed to include terms accounting for longitudinal optical and acoustic phonon scattering as well as impurity scattering. The contributions of the aforementioned scattering mechanisms to spin-dephasing time in the presence of DP effect were examined by solving the equations numerically. Spin-dephasing time was obtained from the temporal evolution of the incoherently summed spin coherence. Effects of temperature, impurity level, magnetic field, and electron density on spin-dephasing time were investigated. Spin-dephasing time was found to increase with increasing magnetic field. Contrary to predictions of previous simplified treatments of the DP effect, spin-dephasing time was found to increase with temperature in the presence of impurity scattering. These results were found to agree qualitatively with results of recent experiments.

Ning, C. Z.↗
NASA NTRS1987

Temperature dependence (4K to 300K) of the electrical resistivity of methane grown carbon fibers

Experimental measurements of the electrical resistivity vs temperature of methane vapor grown carbon fibers are presented. The fibers are heat treated from 1100 C (as-grown) to 3000 C. Data are fit to a standard two band model, which yields values for boundary scattering limited electron mobility, in-plane mean free path, energy band overlap, and total carrier density. The data are also fit to an ellipsoidal band model, where data fits yield effective masses, band overlap, Fermi velocity, phonon contributions to scattering, and ionized impurity scattering rates.

Woollam, John A.↗
NASA NTRS1991

A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys

A model is presented for the high-temperature transport properties of large-grain-size, heavily doped n-type silicon-germanium alloys. Electron and phonon transport coefficients are calculated using standard Boltzmann equation expressions in the relaxation time approximation. Good agreement with experiment is found by considering acoustic phonon and ionized impurity scattering for electrons, and phonon-phonon, point defect, and electron-phonon scattering for phonons. The parameters describing electron transport in heavily doped and lightly doped materials are significantly different and suggest that most carriers in heavily doped materials are in a band formed largely from impurity states. The maximum dimensionless thermoelectric figure of merit for single-crystal, n-type Si(0.8)Ge(0.2) at 1300 K is estimated at ZT about 1.13 with an optimum carrier concentration of n about 2.9 x 10 to the 20th/cu cm.

Vining, Cronin B.↗
NASA NTRS1971

Fluctuation induced conductivity of superconductors above the transition temperature: Regularization of the Maki diagram

The Maki contribution to the conductivity above the superconducting transition temperature is regularized within the framework of the BCS theory. This is achieved through the renormalization of the impurity scattering vertex by inclusion of the effects of pair fluctuations. The conductivity is evaluated for a thin film. It depends only on the reduced temperature and the normal resistance per square. Fair agreement is found with Al films over a wide temperature range. Agreement is not found with experiments on Bi, Pb and Ga films, which apparently contain a strong additional pair-breaking effect. The temperature range in which interactions among fluctuations become important in the Maki conductivity is generally larger than that given by the Ginzburg criterion.

Keller, J.↗
NASA NTRS1972

Fluctuation-induced conductivity of superconductors above the transition temperature - Regularization of the Maki diagram.

The Maki contribution to the conductivity above the superconducting transition temperature is regularized within the framework of the BCS theory. This is achieved through the renormalization of the impurity-scattering vertex by inclusion of the effects of pair fluctuations. The conductivity is evaluated for a thin film. It depends only on the reduced temperature and the normal resistance per square. Fair agreement is found with Al films over a wide temperature range. Agreement is not found with experiments on Bi, Pb, and Ga films, which apparently contain a strong additional pair-breaking effect. The temperature range in which interactions among fluctuations become important in the Maki conductivity is generally larger than that given by the Ginzburg criterion.

Keller, J.↗
NASA NTRS1983

Silicon superlattices. 2: Si-Ge heterostructures and MOS systems

Five main areas were examined: (1) the valence-and conduction-band-edge electronic structure of the thin layer ( 11 A) silicon-superlattice systems; (2) extension of thin-layer calculations to layers of thickness 11 A, where most potential experimental interest lies; (3) the electronic structure of thicker-layer (11 to 110 A) silicon superlattices; (4) preliminary calculations of impurity-scattering-limited electron mobility in the thicker-layer superlattices; and (5) production of the fine metal lines that would be required to produce on MOS superlattice.

Moriarty, J. A.↗
NASA NTRS1993

Analysis of resistance data on a good ceramic sample of YBa2Cu3O(7-x)

Resistance data between 91.4 and 200 K on a ceramic sample of YBa2Cu3O(7-x) are analyzed using a two-band model for normal-state conductance plus the Lawrence-Doniach theory for effects of superconducting fluctuations. The data is fitted to a rms accuracy of 0.16 percent of the resistance in the middle of the temperature range. The steepest slope of the resistance of the sample occurs at 91.13 K, and the analysis shows that the critical region extends to less than 0.3 K above Tc. Values of parameters found indicate that defect or impurity scattering within grains is unusually small in this sample. Some difficulties in understanding Hall data using either simple two-band models or more sophisticated one-band models are discussed briefly.

Eagles, David M.↗
NASA NTRS1994

Quantum state transfer in double-quantum-well devices

A Monte Carlo simulation of double-quantum-well (DQW) devices is presented in view of analyzing the quantum state transfer (QST) effect. Different structures, based on the AlGaAs/GaAs system, were simulated at 77 and 300 K and optimized in terms of electron transfer and device speed. The analysis revealed the dominant role of the impurity scattering for the QST. Different approaches were used for the optimization of QST devices and basic physical limitations were found in the electron transfer between the QWs. The maximum transfer of electrons from a high to a low mobility well was at best 20%. Negative differential resistance is hampered by the almost linear rather than threshold dependent relation of electron transfer on electric field. By optimizing the doping profile the operation frequency limit could be extended to 260 GHz.

Jakumeit, Jurgen↗
NASA NTRS1994

Long-term evolution of crustal neutron star magnetic fields

We have derived an analytic solution to the asymptotic behavior of dipolar magnetic fields that are generated in the crusts of neutron stars. We show that if the conductivity is due to impurity scattering, as expected for late stages of evolution, the surface field strength at the magnetic pole declines with the power law B(sub p) approximately = (t/t(sub 0))(exp -2/3). The results are shown to be qualitatively consistent with detailed numerical calculations. These latter results are consistent with some recent analyses of pulsar statistics and the magnetic fields of several binary pulsars with white dwarf companions whose ages have been determined. The dependence of the surface magnetic field on spin period of the pulsar is derived.

Urpin, V. A.↗
NASA NTRS1995

Characterization of the transport properties of channel delta-doped structures by light-modulated Shubnikov-de Haas measurements

The transport properties of channel delta-doped quantum well structures were characterized by conventional Hall effect and light-modulated Shubnikov-de Haas (SdH) effect measurements. The large number of carriers that become available due to the delta-doping of the channel, leads to an apparent degeneracy in the well. As a result of this degeneracy, the carrier mobility remains constant as a function of temperature from 300 K down to 1.4 K. The large amount of impurity scattering, associated with the overlap of the charge carriers and the dopants, resulted in low carrier mobilities and restricted the observation of the oscillatory magneto-resistance used to characterize the two-dimensional electron gas (2DEG) by conventional SdH measurements. By light-modulating the carriers, we were able to observe the SdH oscillation at low magnetic fields, below 1.4 tesla, and derive a value for the quantum scattering time. Our results for the ratio of the transport and quantum scattering times are lower than those previously measured for similar structures using much higher magnetic fields.

Mena, R. A.↗
NASA NTRS1987

HgCdTe versus HgZnTe - Electronic properties and vacancy formation energies

The alloy variation of the band gap and the electron and hole effective masses have been calculated for HgCdTe and HgZnTe. Band-gap bowing is larger in HgZnTe than in HgCdTe because of the larger bond length mismatch of HgTe and ZnTe; electron and hole effective masses are found to be comparable for the two alloys for a given band gap. The electron mobility was calculated in both alloys with contributions from phonon, impurity, and alloy scattering. Contributions to the E1 line width due to alloy and impurity scattering in Hg(0.7)Cd(03)Te have been calculated. Results of calculations of the vacancy formation energies in HgTe, ZnTe, and CdTe are discussed.

Berding, M. A.↗
NASA NTRS1986

Effects of macroscopic inhomogeneities on electron mobility in semi-insulating GaAs

It is shown that defect inhomogeneities of sizes larger than the electron mean free path are responsible for the low values and anomalous temperature dependence of the electron mobility in semi-insulating (SI) GaAs. The room-temperature electron mobility values below about 6000 sq cm/V s cannot be uniquely used for the determination of the concentration of ionized defects, since the contribution from inhomogeneities usually exceeds that from scattering by ionized impurities. The effects of the macroscopically inhomogeneous distribution of residual acceptors and the major deep donor EL2 diminish at elevated temperatures between 600 and 900 K, which offers a means for identification of inhomogeneities, and furthermore explains recently reported steplike mobility versus temperature behavior in SI-GaAs.

Walukiewicz, W.↗
NASA NTRS1987

Charge distribution and response time for a modulation-doped extrinsic infrared detector

The electric charge distribution and response time of a modulation-doped extrinsic infrared detector are determined. First, it is demonstrated theoretically that the photoconductive layer is effectively depleted of ionized majority-impurity charges so that scattering is small and mobility is high for photogenerated carriers. Then, using parameters appropriate to an actual detector, the predicted response time is 10 to the -8th to about 10 to the -9th s, which is much faster than comparable conventional detectors. Thus, the modulation-doped detector design would be valuable for heterodyne applications.

Hadek, Victor↗
NASA NTRS1981

Albedo and flux extinction coefficient of impure snow for diffuse shortwave radiation

Impurities enter a snowpack as a result of fallout of scavenging by falling snow crystals. Albedo and flux extinction coefficient of soot contaminated snowcovers were studied using a two stream approximation of the radiative transfer equation. The effect of soot was calculated by two methods: independent scattering by ice grains and impurities and average refractive index for ice grains. Both methods predict a qualitatively similar effect of soot; the albedo is decreased and the extinction coefficient is increased compared to that for pure snow in the visible region; the infrared properties are largely unaffected. Quantitatively, however, the effect of soot is more pronounced in the average refractive index method. Soot contamination provides a qualitative explanation for several snow observations.

Choudhury, B. J.↗
NASA NTRS1988

Ballistic transport in II-VI semiconductor compounds and alloys

Realistic band structures are used in calculating the group velocity and scattering rates for electrons with injection energies up to 1 eV in ZnTe, CdTe, and the low-effective-mass alloy Hg(0.7)Cd(0.3)Te. Scattering from longitudinal optical phonons, ionized impurities, and alloy disorder have been included in the full band-structure calculation, which automatically includes both intra- and intervalley scattering. Of the II-VI materials considered, at 77 K HgCdTe is superior for low injection energies (up to 0.25 eV) while CdTe is superior at higher injection energies (1 eV) at room temperature. The attainable mean free paths (equal to or greater than 1000 A) and group velocities (equal to or greater than 10 to the 8th cm/s) for both systems are comparable to values found in III-V systems.

Berding, M. A.↗
NASA NTRS1984

Electron mobility in modulation-doped heterostructures

A model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.

Walukiewicz, W.↗