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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2015

Insulation Resistance Degradation in Ni-BaTiO3 Multilayer Ceramic Capacitors

Insulation resistance (IR) degradation in Ni-BaTiO3 multilayer ceramic capacitors has been characterized by the measurement of both time to failure and direct-current (DC) leakage current as a function of stress time under highly accelerated life test conditions. The measured leakage current-time dependence data fit well to an exponential form, and a characteristic growth time SD can be determined. A greater value of tau(sub SD) represents a slower IR degradation process. Oxygen vacancy migration and localization at the grain boundary region results in the reduction of the Schottky barrier height and has been found to be the main reason for IR degradation in Ni-BaTiO3 capacitors. The reduction of barrier height as a function of time follows an exponential relation of phi (𝑡)=phi (0)e(exp -2Κt), where the degradation rate constant 𝐾=𝐾o𝑒(𝐸𝑘/𝑘𝑇) is inversely proportional to the mean time to failure (MTTF) and can be determined using an Arrhenius plot. For oxygen vacancy electromigration, a lower barrier height phi(0) will favor a slow IR degradation process, but a lower phi(0) will also promote electronic carrier conduction across the barrier and decrease the insulation resistance. As a result, a moderate barrier height phi(0) (and therefore a moderate IR value) with a longer MTTF (smaller degradation rate constant 𝐾) will result in a minimized IR degradation process and the most improved reliability in Ni-BaTiO3 multilayer ceramic capacitors.

dielectric degradation↗
NASA NTRS2016

Absorption Voltages and Insulation Resistance in Ceramic Capacitors with Cracks

Time dependence of absorption voltages (Vabs) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on Vabs, cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on Vabs, are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks. Index Terms: Ceramic capacitor, insulation resistance, dielectric absorption, cracking.

cracking↗
NASA NTRS2014

Absorption Voltages and Insulation Resistance in Ceramic Capacitors with Cracks

Time dependence of absorption voltages (V(sub abs)) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on V(sub abs)), cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on V(sub abs)), are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks.

ceramic capacitor↗
NASA NTRS2015

Insulation Resistance Degradation in Ni-BaTiO3 Multilayer Ceramic Capacitors

Insulation resistance (IR) degradation in NiBaTiO3 multilayer ceramic capacitors has been characterized by the measurement of both time to failure (TTF) and direct current leakage current as a function of stress time under highly accelerated life test conditions. The measured leakage current time dependence data fit well to an exponential form, and a characteristic growth time tau (sub SD) can be determined. A greater value of tau (sub SD) represents a slower IR degradation process. Oxygen vacancy migration and localization at the grain boundary region results in the reduction of the Schottky barrier height and has been found to be the main reason for IR degradation in NiBaTiO3 capacitors. The reduction of barrier height as a function oftime follows an exponential relation of phi (t ) = phi (0) e (exp -2Kt), where 13 the degradation rate constant K Koe (Ek/kT) is inversely proportional to the mean TTF (MTTF) and can be determined using an Arrhenius plot. For oxygen vacancy electromigration, a lower barrier height phi (0) will favor a slow IR degradation process, but a lower phi (0) will also promote electronic carrier conduction across the barrier and decrease the IR. As a result, a moderate barrier height phi (0) (and therefore a moderate IR value) with a longer MTTF (smaller degradation rate constant K) will result in a minimized IR degradation process and the most improved reliability in NiBaTiO3 multilayer ceramic capacitors.

reliability↗
NASA NTRS1978

Ceramic capacitor insulation resistance failures accelerated by low voltage

Ceramic capacitors failed insulation resistance testing at less than one-tenth their rated voltage. Many failures recovered as the voltage was increased. Comprehensive failure analysis techniques, some of which are unprecedented, were used to examine these failures. It was determined that there was more than one failure mechanism, and the results indicate a need for special additional screening.

Brennan, T. F.↗
NASA NTRS1981

Unstable insulation resistance in ceramic capacitors

The effects of low and varying values of insulation resistance (IR) and their significance in the cause of failure in ceramic capacitors were investigated. Two specific instances involving hardware failure involving ceramic capacitors were examined. It is shown that monolithic, multilayer ceramic capacitors may exhibit low and unstable IR at low voltages, or exhibit no voltage. Other significant results are reported.

Holladay, A. M.↗
NASA NTRS2016

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

testing↗
NASA NTRS2014

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

dielectric polarization↗
NASA NTRS2020

Testing

Testing is conducted to verify that the connectors will properly perform over time (reliability) per the application requirements. Testing by the manufacturer usually involves performance testing per the datasheet requirements. However, the customer may have applications that require performance under unique operational and environmental conditions. In general, electrical tests for connectors include dielectric withstanding voltage, low-signal-level contact resistance, insulation resistance, contact resistance, and standing wave ratio. Environmental tests include humidity, temperature, and contaminating conditions, as well as mechanical stress environments including vibration, mechanical shock, and durability cycling exposures.

Connectors, testing, Dielectric Withstanding Volta↗
NASA NTRS1994

High temperature arc-track resistant aerospace insulation

The topics are presented in viewgraph form and include the following: high temperature aerospace insulation; Foster-Miller approach to develop a 300 C rated, arc-track resistant aerospace insulation; advantages and disadvantages of key structural features; summary goals and achievements of the phase 1 program; performance goals for selected materials; materials under evaluation; molecular structures of candidate polymers; candidate polymer properties; film properties; and a detailed program plan.

Dorogy, William↗
NASA NTRS1974

Programmers manual for static and dynamic reusable surface insulation stresses (resist)

Programming information for the RESIST program for the dynamic and thermal stress analysis of the space shuttle surface insulation is presented. The overall flow chart of the program, overlay chart, data set allocation, and subprogram calling sequence are given along with a brief description of the individual subprograms and typical subprogram output.

Ogilvie, P. L.↗
NASA NTRS1994

Space flight printed wiring board measling investigation

A flight printed wiring board (PWB) for a satellite project was observed to have a high incidence of measling. Other PWB's produced for the program by the same manufacturer did not exhibit the degree of measling as did the 'measle-prone' board. Measling susceptibility during hand soldering and measling effects on PWB insulation resistance were investigated for three production PWB's. Measling resistance was significantly different between the three boards: the 'worst' exhibited five times the number of measles as the 'best' board. 'Severe' measling (that which is likely to affect board reliability) did not exist on the 'best' board, even under extreme soldering conditions (399 degrees C for 12-15 sec.), whereas the 'worst' board showed an average of one 'severe' measle for every two pads under more normal soldering conditions (288-343 degrees C for 2-5 sec.). Both soldering time and temperature affected measling, with time having a slightly greater influence (2 percent versus 12 percent). Measling effects on PWB insulation resistance were inconclusive. These were evaluated by in situ resistance measurements on the same three boards at elevated temperature and humidity. The measured resistance for all three boards decreased for exposures greater than 50 degrees C and 50 percent relative humidity. The 'measle-prone' board showed a resistance decrease at only 25 degrees C and 50 percent relative humidity. However, no definitive difference was detected between measled and not-measled (control) samples. The boards evaluated were production boards, so the effect of interlayer traces connecting the plated-through holes was not controlled. It is likely the resistance measurements were over different volumes of PWB laminate, which would account for the widely varying resistances measured. Thermomechanical measurements on board laminate materials did not reveal any differences attributed to measling. Differences in glass transition temperature were significantly different when measured by DTA, but not by SDT. Laminate thermal expansion differences were significant for the 35 degrees C evaluations, but not for any higher temperatures.

Thomas, Walter B., III↗
NASA NTRS1980

Measurement of loss angle, volume resistivity and surface resistivity of insulating materials used on solar cells

The complete measuring and test system developed to measure the quality and the stability of insulating materials used on solar cell arrays for space application is described. The test set up and measurements are primarily aimed at the measurement and analysis of the degradation of the electrical insulating properties of material used on solar cells. Degradation characteristics of the material subject to thermal cycling, space plasma and very high electrical fields individually and in combination can be investigated.

Doreswamy, C. V.↗
NASA NTRS1976

Thermal/acoustical insulation foam

Lightweight low-density substance can be used as fire resistant insulation in aircraft. Material density can be controlled over range from 0.6-1.2 pounds per cubic foot and has good thermal and acoustic properties.

Lin, R. Y.↗