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Results for “insulator”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Insulator–metal transition induced by electric voltage in a ruthenate Mott insulator

We report the observation of electric-voltage induced insulator–metal phase transition in a ruthenate Mott insulator Ca 3 (Ru 0.9 Ti 0.1 ) 2 O 7 . We show that the electric field effect dominates and leads to a sharp phase transition at measurement temperatures far below the Mott transition, whereas the thermal effect becomes more significant and broadens the phase transition as the measurement temperature approaches the insulator–metal transition. Here, the electric field induced insulator–metal transition is presumably attributed to the avalanche breakdown of the correlated insulating state when driven out of equilibrium. This work highlights the strategy of using electric voltage to control the phase transition of this system in addition to other nonthermal parameters such as magnetic field and pressure reported previously.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Quantum Sensing of Insulator‐to‐Metal Transitions in a Mott Insulator

Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. Taking advantage of these strengths, this paper reports on NV-based local sensing of the electrically driven insulator-to-metal transition (IMT) in a proximal Mott insulator. The resistive switching properties of both pristine and ion-irradiated VO 2 thin film devices are studied by performing optically detected NV electron spin resonance measurements. These measurements probe the local temperature and magnetic field in electrically biased VO 2 devices, which are in agreement with the global transport measurement results. In pristine devices, the electrically driven IMT proceeds through Joule heating up to the transition temperature while in ion-irradiated devices, the transition occurs nonthermally, well below the transition temperature. Here, the results provide direct evidence for nonthermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials.

McLaughlin, Nathan J.↗
DOE OSTI2026

ResStock Measure Documentation: Advanced Air Sealing, Attic Floor Insulation, Duct Sealing and Insulation, and Drill-and-Fill Wall Insulation

This report is part of a series describing different ResStock measures. "Measures" refers to energy efficiency retrofits that can be applied to buildings during modeling. This documentation covers the "Advanced Air Sealing, Attic Floor Insulation, Duct Sealing and Insulation, and Drill-and-Fill Wall Insulation" measure upgrade methodology and briefly discusses key results.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS2001

The Evolution of Flexible Insulation as Thermal Protection Systems for Reusable Launch Vehicles: AFRSI (Advanced Flexible Reusable Surface Insulation) to CRI (Conformal Reusable Insulation)

This viewgraph presentation gives an overview of the evolution of flexible insulation as a thermal protection system for reusable launch vehicles, Advanced Flexible Reusable Surface Insulation (AFRSI) to Conformal Reusable Insulation (CRI). Details are given on the approved use of AFRIS on the Shuttle Orbiter in June 1980, the first flight of AFRIS on STS-6, windward blanket development, composite flexible blanket insulation, and flight demonstrations.

Rezin, Marc↗
DOE OSTI2015

Connecting thermoelectric performance and topological-insulator behavior: Bi 2 Te 3 and Bi 2 Te 2 Se from first principles

Thermoelectric performance is of interest for numerous applications such as waste-heat recovery and solid-state energy conversion and will be seen to be closely connected to topological-insulator behavior. In this paper, we here report first-principles transport and defect calculations for Bi 2 Te 2 Se in relation to Bi 2 Te 3 . The two compounds are found to contain remarkably different electronic structures in spite of being isostructural and isoelectronic. We also discuss these results in terms of the topological-insulator characteristics of these compounds.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2015

First-order melting of a weak spin-orbit mott insulator into a correlated metal

Herein, the electronic phase diagram of the weak spin-orbit Mott insulator (Sr 1-x La x ) 3 Ir 2 O 7 is determined via an exhaustive experimental study. Upon doping electrons via La substitution, an immediate collapse in resistivity occurs along with a narrow regime of nanoscale phase separation comprised of antiferromagnetic, insulating regions and paramagnetic, metallic puddles persisting until x≈0.04. Continued electron doping results in an abrupt, first-order phase boundary where the Néel state is suppressed and a homogenous, correlated, metallic state appears with an enhanced spin susceptibility and local moments. In conclusion, as the metallic state is stabilized, a weak structural distortion develops and suggests a competing instability with the parent spin-orbit Mott state.

36 MATERIALS SCIENCE↗
DOE OSTI2014

A protocol for lifetime energy and environmental impact assessment of building insulation materials

This article describes a proposed protocol that is intended to provide a comprehensive list of factors to be considered in evaluating the direct and indirect environmental impacts of building insulation materials, as well as detailed descriptions of standardized calculation methodologies to determine those impacts. The energy and environmental impacts of insulation materials can generally be divided into two categories: (1) direct impact due to the embodied energy of the insulation materials and other factors and (2) indirect or environmental impacts avoided as a result of reduced building energy use due to addition of insulation. Standards and product category rules exist, which provide guidelines about the life cycle assessment (LCA) of materials, including building insulation products. However, critical reviews have suggested that these standards fail to provide complete guidance to LCA studies and suffer from ambiguities regarding the determination of the environmental impacts of building insulation and other products. The focus of the assessment protocol described here is to identify all factors that contribute to the total energy and environmental impacts of different building insulation products and, more importantly, provide standardized determination methods that will allow comparison of different insulation material types. Further, the intent is not to replace current LCA standards but to provide a well-defined, easy-to-use comparison method for insulation materials using existing LCA guidelines. - Highlights: • We proposed a protocol to evaluate the environmental impacts of insulation materials. • The protocol considers all life cycle stages of an insulation material. • Both the direct environmental impacts and the indirect impacts are defined. • Standardized calculation methods for the ‘avoided operational energy’ is defined. • Standardized calculation methods for the ‘avoided environmental impact’ is defined.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2016

A high-temperature ferromagnetic topological insulating phase by proximity coupling

Topological insulators are insulating materials that display conducting surface states protected by time-reversal symmetry 1 , 2 , wherein electron spins are locked to their momentum. This unique property opens up new opportunities for creating next-generation electronic, spintronic and quantum computation devices 3 , 4 , 5 . Introducing ferromagnetic order into a topological insulator system without compromising its distinctive quantum coherent features could lead to the realization of several predicted physical phenomena 6 , 7 . In particular, achieving robust long-range magnetic order at the surface of the topological insulator at specific locations without introducing spin-scattering centres could open up new possibilities for devices. Here we use spin-polarized neutron reflectivity experiments to demonstrate topologically enhanced interface magnetism by coupling a ferromagnetic insulator (EuS) to a topological insulator (Bi 2 Se 3 ) in a bilayer system. This interfacial ferromagnetism persists up to room temperature, even though the ferromagnetic insulator is known to order ferromagnetically only at low temperatures (<17 K). The magnetism induced at the interface resulting from the large spin–orbit interaction and the spin–momentum locking of the topological insulator surface greatly enhances the magnetic ordering (Curie) temperature of this bilayer system. The ferromagnetism extends ~2 nm into the Bi 2 Se 3 from the interface. Owing to the short-range nature of the ferromagnetic exchange interaction, the time-reversal symmetry is broken only near the surface of a topological insulator, while leaving its bulk states unaffected. The topological magneto-electric response originating in such an engineered topological insulator 2 , 8 could allow efficient manipulation of the magnetization dynamics by an electric field, providing an energy-efficient topological control mechanism for future spin-based technologies

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well

Topological insulator (TI) states have been demonstrated in materials with a narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with a sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k∙p Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable.

bio-inspired↗