A Comprehensive Cross-Model Framework for Benchmarking the Performance of Quantum Hamiltonian Simulations
Not Available
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Detection of False Data Injection Attacks in Battery Stacks Using Input Noise-Aware Nonlinear State Estimation and Cumulative Sum Algorithms
Grid-scale battery energy storage systems (BESSs) are vulnerable to false data injection attacks (FDIAs), which could be used to disrupt state of charge (SoC) estimation. Inaccurate SoC estimation has negative impacts on system availability, reliability, safety, and the cost of operation. In this article a combination of a Cumulative Sum (CUSUM) algorithm and an improved input noise-aware extended Kalman filter (INAEKF) is proposed for the detection and identification of FDIAs in the voltage and current sensors of a battery stack. The series-connected stack is represented by equivalent circuit models, the SoC is modeled with a charge reservoir model and the states are estimated using the INAEKF. Further, the root mean squared error of the states’ estimation by the modified INAEKF was found to be superior to the traditional EKF. By employing the INAEKF, this article addresses the research gap that many state estimators make asymmetrical assumptions about the noise corrupting the system. Additionally, the INAEKF estimates the input allowing for the identification of FDIA, which many alternative methods are unable to achieve. The proposed algorithm was able to detect attacks in the voltage and current sensors in 99.16% of test cases, with no false positives. Utilizing the INAEKF compared to the standard EKF allowed for the identification of FDIA in the input of the system in 98.43% of test cases.
25 ENERGY STORAGE↗
Data-Driven Modeling of Grid-Forming Inverter Dynamics Using Power Hardware-in-the-Loop Experimentation
Not Available
24 POWER TRANSMISSION AND DISTRIBUTION↗
Revisiting Power Systems Time-Domain Simulation Methods and Models
The changing nature of power systems dynamics is challenging present practices related to modeling and study of system-level dynamic behavior. While developing new techniques and models to handle the new modeling requirements, it is also critical to review some of the terminology used to describe existing simulation approaches and the embedded assumptions. This article provides a first-principles review of the simplifications and transformations commonly used in the formulation of time-domain simulation models. It introduces a taxonomy and classification of time-domain simulation models depending on their frequency bandwidth, network representation, and software availability. Furthermore, it focuses on the fundamental aspects of averaging techniques, and model reduction approaches that result in modeling choices, and discusses the associated challenges and opportunities of applying these methods in systems with large shares of Inverter Based Resources (IBRs). The article concludes with an illustrative simulation that compares the trajectories of an IBR-dominated system.
behavioral sciences↗
A Generic and Multifunctional Electromagnetic Transient Model for Grid-Following Inverters
This paper presents a generic and multifunctional electromagnetic transient (EMT) dynamic model of grid-following (GFL) inverter-based resources (IBRs) using the PSCAD software platform. The features of the model include flexibility in selecting various types and combinations of DC sources covering photovoltaic modules, battery modules, and ideal DC-source modules as well as flexibility in selecting either switching or averaged models of the inverter. This model also covers exhaustive lists of controller algorithm, including open-loop/closed-loop PQ dispatch control, DC voltage and AC terminal voltage control, and conventional current control designed in the dq-domain, the ..alpha....beta.. -domain, and the positive-/negative-sequence domain. Moreover, this model is equipped with flexibility in selecting various types of current-limiting schemes, including saturation-based and latching-based current limiters, and anti-windup protection. Also, the EMT model is agnostic to the MVA rating and is suitable for interfacing transmission systems by complying with IEEE Std. 2800. The generality in the power circuits and the multifunctional options in the operation and control of the developed EMT model make it suitable for both academia and industry to study various power system aspects, including, but not limited to, the fault behavior of GFL IBRs, the impacts on the protection system, and the transient stability of a system interfaced with large numbers of GFL IBRs.
integrated circuit modeling↗
Visual Analytics of Crosstalk in Quantum Hardware
Crosstalk remains a major obstacle to building scalable and fault-tolerant quantum computers. Conventional diagnostic techniques-often based on numerical simulation or statistical modeling-struggle to scale with hardware complexity and offer limited interpretability. In this work, we present a visual analytics framework for diagnosing qubit crosstalk using lightweight, circuit-based models integrated with an interactive user interface. Our approach quantifies correlations between active and idle qubits under parameterized single- and twoqubit operations, enabling detection of both spatial and gateinduced crosstalk. The system incorporates qubit topology and gate performance data to support sector-based exploration and correlation mapping. This tool assists users in identifying correlated error sources, informing qubit placement strategies, and guiding noise-aware circuit design.
Chae, Junghoon [ORNL] (ORCID:0000000206016746)↗
Modeling and ZVS Operation of the Isolated Modular Multilevel DC–DC Converter With a Unified Trapezoidal Wave Modulation
Here, this article introduces a unified trapezoidal wave (UTW) modulation scheme for the isolated modular multilevel dc–dc (IM2dc) converter, which consolidates multiple existing modulation strategies for the IM2dc converter, including the quasi-square wave (QSW) modulation, trapezoidal wave modulation, and sinusoidal wave modulation, into a unified framework. Furthermore, this article introduces the harmonic state-space (HSS) equations to model the IM2dc converter based on the UTW modulation method. The HSS model operates in the frequency domain, enabling it to circumvent the complexities associated with time-domain analysis and seamlessly integrate with the UTW modulation. This article proceeds to analyze the real and reactive power transfer characteristics of the IM2dc converter, as well as the power factor, considering the influence of multiple modulation parameters. Subsequently, it delves into the examination of zero voltage switching (ZVS) conditions for the IM2dc converter based on the UTW modulation and the HSS model. The complete ZVS boundaries of the IM2dc converter, taking various voltage ratios into account, are derived. This article also illustrates the effects of including harmonic orders in the modeling process, modulation parameters, and internal harmonic ripples on the ZVS boundaries. Finally, experimental validation of the analyses is conducted on a down-scaled prototype.
42 ENGINEERING↗
Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior
In this study, neuromorphic computing, which mimics the functions of biological brains, offers improvements in both latency and energy efficiency over typical von Neumann computing architectures. Spiking neural networks can be especially power-efficient because they encode information temporally and can use more sparse electrical inputs. Here, we study the design of volatile memristors (variable resistors with memory) for neuronal devices, with particular consideration toward the feasibility of all-on-chip oscillation using built-in capacitance. We use circuit simulations to model the behavior of oscillator neurons with a range of realistic material properties. We find that energy inputs increase with insulating-phase resistivity, thermal conductivity, and device aspect ratio. However, we also find that the minimum capacitance needed for oscillation decreases with increasing insulating-phase resistivity, which opposes the constraints for power efficiency. Based on published data on NbO 2 , VO 2 , and EuNiO 3 , we find that existing materials can be engineered for all-on-chip spiking using their parasitic capacitance.
36 MATERIALS SCIENCE↗
AutoTG: Reinforcement Learning-Based Symbolic Optimization for AI-Assisted Power Converter Design
Power converters are pervasive in modern electronic component design. They can be found in all electronic devices from household appliances and cellphone chargers to vehicles. Currently, designing new circuit topologies is hard because it requires human expertise based on experience and is difficult to automate. However, artificial-intelligence-assisted design can significantly facilitate the development of new power converters and/or improve the final result. Intelligently designed highly efficient power converters can have a significant effect on many important attributes, such as power efficiency, layout size, cost, heat dissemination, energy requirements, etc. We propose Autonomous Topology Generator (AutoTG), a reinforcement-learning-based framework that generates power converter topology candidates based on user specifications, optimized for user preferences. By modeling power converter design as a symbolic optimization problem, we sequentially sample components in an autoregressive manner until new topologies are formed, providing both the topology specification and the sizing (magnitude of each component parameter) of the proposed power converter. Here, we provide an empirical evaluation and show that AutoTG is able to generate varied high-efficiency topologies within component restrictions based on user input and show that previously unknown topologies can be found for further evaluation.
(AI)-based design↗
Impacts of Non-Ideal Back Contact on Capacitance Measurements in CdTe Solar Cells
CdTe solar cells suffer from a non-ideal back contact which can strongly affect the equivalent circuit model and complicate capacitance measurements. Here, five different back contact materials are deposited on identical CdTe absorbers and their influence on capacitance measurements is characterized. A five-element equivalent circuit model is shown to represent a CdTe solar cell with a non-ideal back contact, and capacitance-frequency (C-f) measurements on each sample clearly show the influence of this contact. Capacitance-voltage (C-V) measurements on each sample show the influence of frequency on measured capacitance. In the AlGaOx/Au sample, temperature dependent C-fs show the back barrier height to be 240 meV, and ongoing measurements will give a comparison of back barrier heights for all samples. This study provides insight into the efficacy of various back contacts and highlights potential errors in the interpretation of capacitance measurements due to the presence of the back contact.
cadmium compounds↗
Defects in RbF - Treated Cu(InxGal-x)Se2 Solar Cells and Their Impact on Voc
Cu(In,Ga)Se2 solar cell efficiency is limited by VOC due in large part to bulk defects limiting lifetime, but alkali treatments such as RbF recover some of the VOC loss. In this work, defects in RbF-treated and untreated CIGS were quantitatively characterized using DLTS and DLOS, and three main defects were identified in each sample. The RbF-PDT resulted in a large decrease in the mid-gap trap concentration, which was accompanied by a large improvement in minority carrier lifetime. This lifetime improvement combined with a change in doping accounted for a significant portion of the VOC improvement in the RbF CIGS.
charge carrier lifetime↗
A Neural Network-Based Power Mismatch Elimination Strategy for Integrated Solar and ESS AC/DC Systems (MARS)
The multiport autonomous reconfigurable solar power plant (MARS) is a promising concept for the integration of photovoltaic (PV) and energy storage system (ESS) to the transmission ac grid and a high-voltage direct current (HVdc) link. The presence of PV and ESS in each arm of the MARS results in uneven distribution of active power among different submodules (SMs), thereby leading to unbalanced SM capacitor voltages and potentially compromising the system stability. Moreover, in the case of partial shadings, shaded PV SMs will suffer from decreased power injections causing power mismatch in the MARS system. To address this issue, a neural-network-based power mismatch elimination (NNPME) strategy is proposed in this article. The proposed NNPME strategy optimizes ESS usage and leverages both dc and ac circulating currents to facilitate power transfer among the SMs, arms, and phases of the MARS system. Simulation and control hardware-in-the-loop (cHIL) experiments demonstrate the effectiveness of the proposed NNPME strategy. Compared with the traditional approaches, the proposed NNPME strategy can significantly enhance system efficiency and ensure stable and continuous operation, even in the presence of uneven power distribution within the MARS system.
14 SOLAR ENERGY↗
Aligned carbon nanotubes for 1,000x improvement in computing (CRADA Final Report)
As part of the Cyclotron Road program, the Aligned Carbon team worked to improve and bring to market their technology to manufacture carbon nanotubes (CNTs) for integrated circuits. There are multiple applications which can benefit from the use of CNT based transistors in integrated circuits, including high performance computing, RF data transmission, and biosensing. Each of these applications faces a problem of poor starting CNT material to come to market. Aligned Carbon offers material with the highest ceiling of performance based around a fully aligned, uniform, on-wafer growth of CNTs and our proprietary purification process to remove metallic CNTs leaving only the semi-conducting ones behind. Further, Aligned Carbon has been guided by scalable manufacturing processes that will fit seamlessly into the integrated circuit foundry model of chip fabrication.
36 MATERIALS SCIENCE↗
Strong Zero Modes in Integrable Quantum Circuits
It is a classic result that certain interacting integrable spin chains host robust edge modes known as strong zero modes (SZMs). In this Letter, we extend this result to the Floquet setting of local quantum circuits, focusing on a prototypical model providing an integrable Trotterization for the evolution of the XXZ Heisenberg spin chain. By exploiting the algebraic structures of integrability, we show that an exact SZM operator can be constructed for these integrable quantum circuits in certain regions of parameter space. Our construction, which recovers a well-known result by Paul Fendley in the continuous-time limit, relies on a set of commuting transfer matrices known from integrability, and allows us to easily prove important properties of the SZM, including normalizabilty. Our approach is different from previous methods and could be of independent interest even in the Hamiltonian setting. Furthermore, our predictions, which are corroborated by numerical simulations of infinite-temperature autocorrelation functions, are potentially interesting for implementations of the XXZ quantum circuit on available quantum platforms.
1-dimensional spin chains↗
A Unidirectional Two-Compartment Neuron Circuit with On-chip STDP learning
Most neuromorphic chips implement the single-compartment point neuron model where synapse circuits connect directly to a leaky integrate and fire (LIF) soma circuit. However, when using a biologically plausible soma circuit (e.g., Hodgkin-Huxley neuron model), an interface circuitry, such as a current conveyor circuit, is needed to transmit synaptic current to the soma circuit. This is especially true for ultra-low power neuron circuits, where membrane capacitance is on the order of 20 fF. This need for an interface circuit arises because the parasitic capacitance and leakage current caused by fabrication mismatch and second-order effects of the output transistors in the synapse circuits can disturb the spiking dynamics of the soma circuit if connected without an interface. Using an interface circuit to isolate the soma’s membrane capacitor from synapses resolves this issue. We propose to use a unidirectional resistor (a transconductance circuit) to connect the synapse and soma circuits instead of conventional current conveyor circuits. Using a biologically plausible spike pattern detection model, we show that the on-chip spike-timing-dependent plasticity (STDP) learning performance of the proposed unidirectional two-compartment neuron circuit is similar to a single-compartment circuit (with a current conveyor as an interface) and additionally, it is more power-efficient and biologically plausible. The chip is fabricated in the Taiwan Semiconductor Manufacturing Company (TSMC) 250 nm technology node and comprises a single neuron circuit.
Gautam, Ashish [ORNL]↗
Characterizing and Modeling the Influence of Geometry on the Performance of Superconducting Nanowire Cryotrons
The scaling of superconducting nanowire detectors to larger arrays is often limited by room-temperature-readout cabling. Cryogenic integrated circuits constructed from nanowire cryotrons, or nanocryotrons, can address this limitation by performing signal processing on chip. In this study, we characterize key performance metrics of the nanocryotron to elucidate its potential as a logical element in cryogenic integrated circuits and develop an electro-thermal model to connect material parameters with device performance. We find that the performance of the nanocryotron depends on the device geometry, and trade-offs are associated with optimizing the gain, jitter, and energy dissipation. Here, we demonstrate that nanocryotrons fabricated on niobium nitride can achieve a grey zone less than 210 nA wide for a 5 ns long input pulse corresponding to a maximum achievable gain of 48 dB, an energy dissipation of less than 20 aJ per operation, and a jitter of less than 60 ps.
Superconductor↗
Unraveling the Highly Plastic Behavior of ALD-Aluminum Oxide Encapsulations by Small-Scale Tensile Testing
We present a study directly measuring the electron-beam-induced plasticity of amorphous Al 2 O 3 coatings. Core–shell nanostructures are employed as small-scale model systems for two-dimensional coatings made by atomic layer deposition (ALD). Copper nanowires (NWs) are used as substrates for ALD deposition, representing a model system for interconnects commonly found in integrated circuits. Experiments are performed in situ in a transmission electron microscope (TEM) and further analyzed with electron energy loss spectroscopy (EELS). Our in situ TEM tensile experiments reveal the highly plastic behavior of the ALD shell, which withstands a maximum strain of 188%. Comparable samples under beam-off conditions show a brittle fracture, which underlines the effect of electron irradiation. The electron-beam-activated bond switching within the amorphous network enables compensation of the applied tensile strain, leading to viscous flow. By incorporating an intermediate nanocrystalline layer within the Al 2 O 3 shell, the plasticity is suppressed and brittle fracture occurs. This work directly demonstrates the tuning of mechanical properties in amorphous ALD structures through electron irradiation.
36 MATERIALS SCIENCE↗