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Results for “interface barrier”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Ballistic-electron-emission microscopy investigation of Schottky barrier interface formation

Ballistic-electron-emission microscopy (BEEM) has been used to investigate the origin of defects at the Au/GaAs(100) Schottky barrier interface. In addition, molecular beam epitaxy (MBE) and in situ fabrication methods have been employed to control Schottky barrier interface properties. BEEM characterization combined with MBE methods has enabled the development of a near-ideal Schottky barrier interface with drastically reduced defect density.

Hecht, M. H.↗
DOE OSTI2020

Review—Polymer/Ceramic Interface Barriers: The Fundamental Challenge for Advancing Composite Solid Electrolytes for Li-Ion Batteries

Composite-solid electrolytes, in which ion-conducting polymers are combined with superionic ceramics, could revolutionize electrochemical-energy-storage devices enabling higher energy density, providing greater stability during operation and enhanced safety. However, the interfacial resistance between the ceramic and polymer phases strongly suppresses the ionic conductivity and presents the main obstacle to the use of these materials. Here, we emphasize the need for a distinct focus on reducing energy barriers to interfacial ion transport and improving the cation transference number. To achieve this goal, it is essential to develop a fundamental understanding of the parameters that influence the interfacial barriers to ion transport in composite electrolytes, and to understand the effect of the type of ceramic ("active" and "inert") and its content on ion-transport phenomena. We suggest that adapting the polymer chemistry, mainly directed on polymerized ionic liquids, (PolyILs), and combined with functionalization of the surface of ceramic nanoparticles is a promising route for overcoming the high-energy-barrier challenge. Owing to high content of ion-conducting ceramics and high t+ of PolyILs, the fractional contribution of the migrating cationic species to the total ionic conductivity of polymer-in-ceramic electrolytes via an interfacial percolation path, will be close to unity, thus eliminating complications that might arise from emerging concentration gradients during the operation of solid-state batteries.

25 ENERGY STORAGE↗
NASA NTRS1980

Photoemission measurements of interface barrier energies for tunnel oxides on silicon

Internal photoemission measurements of the Si/SiO2 and Al/SiO2 barrier heights on oxides of tunneling thickness (43-56 A) are compared with measurements on thick oxides (310 A and greater) and the barrier heights are found to be the same. The results suggest that substantially thinner oxides, grown by the same method, can be characterized by the same barrier heights. Limits to the experimental technique posed by photovoltaic and displacement currents, and transport of hot carriers in the tunnel oxide are discussed.

Dressendorfer, P. V.↗
NASA NTRS1988

Spatially resolved ballistic electron spectroscopy of subsurface interfaces

Buried interfaces have traditionally been inaccessible to direct investigation by surface-sensitive techniques. A unique and novel electronic probe, which is sensitive to subsurface electronic structure, has been utilized to probe Schottky barrier interfaces. The method, ballistic electron emission microscopy (BEEM), is based on scanning tunnelling microscopy (STM) techniques. A theoretical treatment has been developed to describe the ballistic electron spectra obtained by BEEM and this treatment is applied to data obtained on the Au-Si Schottky barrier interface system. Excellent agreement between experiment and theory is obtained. In addition, the treatment predicts nanometer spatial resolution for interface imaging by BEEM.

Bell, L. D.↗
DOE OSTI2019

Tailoring MgZnO/CdSeTe Interfaces for Photovoltaics

Mg x Zn 1-x O (MZO) shows great promise to replace CdS as a buffer layer in CdTe-based solar cells. It is more transparent, and the MZO bandgap and electron density can be tuned, thus providing flexibility in controlling the conduction band offsets and recombination rates between transparent conductive oxide/MZO and MZO/CdSeTe interfaces. Integrating this material into solar cell devices has been frustrated by the common observation of abnormal current-voltage curves. Simulations indicate that this anomalous behavior can be attributed to front interface barrier effects. Experiments demonstrate that this common MZO interface problem can be resolved experimentally by surface preparation, preheat steps, and removing oxygen during absorber deposition and CdCl 2 treatment. Oxygen during the cell fabrication process is likely to alter MZO properties and MZO/CdSeTe band alignment. After addressing these interface issues and modest optimization, devices with high short-circuit density of 29 mA/cm 2 and efficiency above 16% are demonstrated.

14 SOLAR ENERGY↗
NASA NTRS1988

Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopy

A new technique for spectroscopic investigation of subsurface interface electronic structure has been developed. The method, ballistic-electron-emission microscopy (BEEM), is based on scanning tunneling microscopy. BEEM makes possible, for the first time, direct imaging of subsurface interface properties with nanometer spatial resolution. The first application of BEEM to subsurface Schottky-barrier interfaces is reported.

Kaiser, W. J.↗
NASA NTRS1989

Ballistic-electron-emission microscopy of subsurface defects at the Au-GaAs(100) interface

The application of ballistic-electron-emission microscopy (BEEM) to a study of the influence of GaAs(100) substrate conditions on the formation of a multidefect structure at the Au-GaAs(100) Schottky barrier interface is described. Interfaces prepared on both melt-grown GaAs(100) wafer substrates and MBF-deposited GaAs(100) buffer layers are considered. As a comparison to the study of Au-GaAs(100) interfaces, BEEM imaging is performed on Au-Si(100) interfaces. It is noted that Au-GaAs(100) interface formation is relatively insensitive to the effects of substrate surface condition and substrate bulk defect density, and that the combination of BEEM imaging and BEEM spectroscopy indicates that the heterogeneous interface defects are the result of diffusion between the Schottky barrier electrodes.

Hecht, M. H.↗
NASA NTRS1993

Ballistic-Electron-Emission Microscopy Techniques for Nanometer-scale Characterization of Interfaces

Semiconductor interface properties are among the most important phenomena in materials science and technology. The study of metal/semiconductor Schottky barrier interfaces has been the primary focus of a large research and development community for decades. Throughout the long history of interface investigation, the study of interface defect electronic properties have been seriously hindered by the fundamental experimental difficulty of probing subsurface structures. A new method, Ballistic-Electron-Emission Microscopy (BEEM), has been developed which not only enables spectroscopic probing of subsurface interface properties, but also, provides nanometer-resolution imaging capabilities. BEEM employs Scanning Tunneling Microscopy (STM) and a unique spatially localized ballistic electron spectroscopy method...

Bell, L. D.↗
DOE OSTI2019

Engineered barrier material interactions at elevated temperatures: Bentonite-metal interactions under elevated temperature conditions

The development of deep repository concepts in the USA is evaluating generic options for disposal of heat-generating nuclear spent nuclear fuel (SNF) waste for a suite of host rock media (clay rock, granite, salt). Large waste canister designs (e.g., dual purpose canisters or DPC’s) are currently being considered to accommodate many SNF assemblies. Large amounts of SNF in the waste packages will produce high thermal loads generating temperatures in excess of 200 °C for long periods of time. For a bentonite backfilled repository concept, prolonged exposure to high temperatures will induce chemical reactions in the engineered barrier system (EBS), particularly at barrier interfaces. Our focus is on experimental investigations and the application of thermodynamic modeling to evaluate clay-zeolite phase equilibria as a function of temperature and fluid chemistry. Experimental work on barrier material interactions under hydrothermal conditions (150 – 300 °C, 15-16 MPa) has elucidated mineral phase changes in Wyoming (Colony mine) bentonite in the presence of steel phases. Glassy material in bentonite is replaced by analcime-wairakite phases, and through apparent clinoptilolite recrystallization. The initial increase in dissolved silica leads to authigenic quartz formation. Such mineral assemblage suggests an initially silica-rich environment (analcime, clinoptilolite) moving towards Si-depleted conditions. Analcime-wairakite compositions suggest a well-defined solid-solution between these Na and Ca end-members. Smectite clay in these experiments is stable with Fe-saponite and chlorite growth co-existing with binary/ternary sulfides at steel interfaces. Little or no illite was observed in the reaction products which could be tied to silica oversaturation and low K in the system. The thermodynamic analysis is used to evaluate thermodynamic data and develop phase diagrams to describe stability field relations of secondary mineral phase occurrences. This analysis allows for delineation of potential reaction pathways in bentonite clay degradation and interactions with metallic phases. One example of this is the important role of dissolved silica plus other phase components to the formation of alteration mineralogy observed in these interactions. All these investigations are key to the assessment of thermally-induced degradation zones in the EBS during the thermal period and their effect on barrier performance in the safety assessment.

Jove-Colon, Carlos↗
DOE OSTI2022

Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells

For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage V for is larger than expected, especially for green LEDs. This is mainly due to the large barriers to vertical carrier transport caused by the total polarization discontinuity at multiple quantum well and quantum barrier interfaces. The natural random alloy fluctuation in quantum wells has proven to be an important factor reducing V for . However, this does not suffice in the case of green LEDs because of their larger polarization-induced barrier. V-shaped defects (V-defects) have been proposed as another key factor in reducing V for to allow lateral injection into multiple quantum wells, thus bypassing the multiple energy barriers incurred by vertical transport. In this paper, to model carrier transport in the whole LED, we consider both random-alloy and V-defect effects. A fully two-dimensional drift-diffusion charge-control solver is used to model both effects. The results indicate that the turn-on voltages for blue and green LEDs are both affected by random alloy fluctuations and the V-defect density. For green LEDs, V for decreases more due to V-defects, where the smaller polarization barrier at the V-defect sidewall is the major path for lateral carrier injection. Then, we discuss how the V-defect density and size affects the results.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1991

Development and application of virtual reality for man/systems integration

While the graphical presentation of computer models signified a quantum leap over presentations limited to text and numbers, it still has the problem of presenting an interface barrier between the human user and the computer model. The user must learn a command language in order to orient themselves in the model. For example, to move left from the current viewpoint of the model, they might be required to type 'LEFT' at a keyboard. This command is fairly intuitive, but if the viewpoint moves far enough that there are no visual cues overlapping with the first view, the user does not know if the viewpoint has moved inches, feet, or miles to the left, or perhaps remained in the same position, but rotated to the left. Until the user becomes quite familiar with the interface language of the computer model presentation, they will be proned to lossing their bearings frequently. Even a highly skilled user will occasionally get lost in the model. A new approach to presenting type type of information is to directly interpret the user's body motions as the input language for determining what view to present. When the user's head turns 45 degrees to the left, the viewpoint should be rotated 45 degrees to the left. Since the head moves through several intermediate angles between the original view and the final one, several intermediate views should be presented, providing the user with a sense of continuity between the original view and the final one. Since the primary way a human physically interacts with their environment should monitor the movements of the user's hands and alter objects in the virtual model in a way consistent with the way an actual object would move when manipulated using the same hand movements. Since this approach to the man-computer interface closely models the same type of interface that humans have with the physical world, this type of interface is often called virtual reality, and the model is referred to as a virtual world. The task of this summer fellowship was to set up a virtual reality system at MSFC and begin applying it to some of the questions which concern scientists and engineers involved in space flight. A brief discussion of this work is presented.

Brown, Marcus↗
NASA NTRS1995

Method for fabricating semiconductor devices

A process for fabricating gold/gallium arsenide structures, in situ, on molecular beam epitaxially grown gallium arsenide. The resulting interface proves to be Ohmic, an unexpected result which is interpreted in terms of increased electrode interdiffusion. More importantly, the present invention surprisingly permits the fabrication of Ohmic contacts in a III-V semiconductor material at room temperature. Although it may be desireable to heat the Ohmic contact to a temperature of, for example, 200 degrees Centigrade if one wishes to further decrease the resistance of the contact, such low temperature annealing is much less likely to have any deleterious affect on the underlying substrate. The use of the term in situ herein, contemplates continuously maintaining an ultra-high vacuum, that is a vacuum which is at least 10.sup.-8 Torr, until after the metallization has been completed. An alternative embodiment of the present invention comprising an additional step, namely the termination of the gallium arsenide by a two monolayer thickness of epitaxial aluminum arsenide as a diffusion barrier, enables the recovery of Schottky barrier behavior, namely a rectified I-V characteristic. The present invention provides a significant breakthrough in the fabrication of III-V semiconductor devices wherein excellent Ohmic contact and Schottky barrier interfaces to such devices can be achieved simply and inexpensively and without requiring the high temperature processing of the prior art and also without requiring the use of exotic high temperature refractory materials as substitutes for those preferred contact metals such as gold, aluminum and the like.

Kaiser, William J.↗
DOE OSTI2023

Unraveling kinking: A plasticity enhancing failure mode in high strength nano metallic laminates

Kinking is an important and plasticity-enhancing deformation/failure mode in numerous mechanically anisotropic materials including high-strength nano metallic laminates (NMLs). However, our current limited understanding of the mechanics of kinking and its dependence on microstructural attributes is insufficient for thoroughly comprehending and eventually being able to control failure behaviors of materials. In this study, we investigate kinking dependencies on microstructural attributes in NMLs via in situ micropillar compression, multiscale microstructure characterization, dislocation dynamic simulations, and crystal plasticity modeling. Additionally, by examining several NML systems (Cu/Fe, Ag/Fe, Al-4Mg/Fe), we demonstrate that the development of internal stresses during loading activates local layer-parallel glide triggering kinking in NMLs. Furthermore, this work reveals the effect of key microstructural features including layer thickness, layer waviness, interface barrier strength, and work hardening capacity on kink band formation in NMLs. More broadly, our efforts represent a generically applicable approach for probing large-strain deformation behavior of complex materials via synergetic modeling and experimental efforts.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Evidence for ionization damage in mid-wave infrared nBn detectors

The effects of 63 MeV proton and 60Co gamma irradiation on the operation of 4.3 μm cutoff nBn photodetectors are demonstrated separately, and both are shown to yield a total ionizing dose (TID) effect. The effect is shown here in an InAsSbBi nBn detector and has been observed in other bulk alloy nBn detectors, and is unusual as it is notably absent in superlattice nBn detectors. The non-antireflection coated detectors exhibit a pre-radiation quantum efficiency of 17% at 3.3 μm wavelength and a dark current density of 50 μA/cm2, or roughly 300× the Rule 07 expectation, at their ideal operating voltage of −0.4 V bias at 150 K. Step-wise proton irradiation and in situ measurement indicate that the dark current increases to about 400× Rule 07 at the highest proton dose level of 150 krad(Si) (9.10 × 1011 p+/cm2), while the quantum efficiency is degraded at a relatively faster rate than the majority of analogous detectors characterized by our lab. Both the photocurrent and dark current are also shown to exhibit a turn-on voltage magnitude reduction of 100 mV following either gamma or proton irradiation, a trend which is attributable to negative trapped charge at the barrier interface (TID effect). This theory is further supported by an observed capacitance density magnitude reduction with dose and affirmed with Silvaco TCAD simulations. Following both proton exposure and subsequent anneal and gamma exposure and subsequent anneal; dark current, photocurrent, and CV all approach their pre-radiation baseline values.

Physics↗
DOE OSTI2025

Low leakage current in heteroepitaxial Al 0.7 Sc 0.3 N ferroelectric films on Ga N

Wurtzite ( Al , Sc ) N ferroelectrics are attractive for microelectronics applications due to their chemical and structural compatibility with wurtzite semiconductors, such as Ga N and ( Al , Ga ) N . However, the leakage current in epitaxial stacks reported to date should be reduced for reliable device operation. Here, we demonstrate low leakage current in epitaxial Al 0.7 Sc 0.3 N films on Ga N with well-saturated ferroelectric hysteresis loops that are orders of magnitude lower (i.e., 0.07 A cm − 2 ) than previously reported films (1–19 A cm − 2 ) having similar or better structural characteristics. We also show that, for these high-quality epitaxial ( Al , Sc ) N films, structural quality (edge and screw dislocations), as measured by diffraction techniques, is not the dominant contributor to leakage. Instead, the small leakage in our films is limited by thermionic emission across the interfaces, which is distinct from the large leakage due to trap-mediated bulk transport in the previously reported ( Al , Sc ) N films. To support this conclusion, we show that Al 0.7 Sc 0.3 N on lattice-matched In 0.18 Ga 0.82 N buffers with improved structural characteristics but higher interface roughness exhibit increased leakage characteristics. This demonstration of low leakage current in heteroepitaxial ( Al , Sc ) N films and understanding of the importance of interface barrier and surface roughness can guide further efforts toward improving the reliability of wurtzite ferroelectric devices. Published by the American Physical Society 2025

36 MATERIALS SCIENCE↗