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At least 19 records

Intraband optical conductivity sigma/omega,T/ of Cu, Ag, and Au - Contribution from electron-electron scattering

The frequency and temperature dependence of the intraband optical conductivity of the noble metals Cu, Ag and Au is measured and contributions of electron-electron scattering are assessed. Optical measurements were performed at temperatures of 77, 295 and 425 K to obtain values of the Drude electron scattering rate with a linear dependence on temperature which may be attributed to electron-phonon scattering, and a quadratic dependence on photon energy, which is suggestive of electron-electron scattering but is a factor of two to three times greater than would be expected. Comparison of the optical data with dc electrical and thermal resistivity data which also show behavior attributed to electron-electron scattering reveals discrepancies of up to an order of magnitude. Other possible mechanisms for the frequency dependence, including absorptance, electron-surface plasmon interactions, a two-carrier model, and a structure dependence are considered, and it is concluded that the frequency dependence in the Drude scattering rates of the noble metals is not yet quantitatively understood

Parkins, G. R.↗

Simulations of Resonant Intraband and Interband Tunneling Spin Filters

This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD).

resonant tunneling↗

Thematic mapper intraband radiometric performance

There are small differences between the average DN for the 16 detectors in each band, typically 0.8 DN; the standard deviations also differ typically by 0.4 DN. Differences of mode in a band are as large as 6 DN. Some DN levels appear to be strongly favored over adjacent levels. Differences between forward and reverse scans are approximately 0.1 DN in the mean, and 0 to 0.6 DN in the standard deviation. Geometrically resampled images (P data), in which the fixed correspondence between lines and single detectors is lost, are statistically similiar to the ensemble of detectors in each band in A data. The magnitude of inter-detector variation is readily seen by making an image of the first derivative in the vertical (line) direction of a flat field and stretching progressively wider ranges to gray; most detectors differ from their neighbors by 1 to 2 DN. The film output from the GSFC filmwriter used for TM images was found to have scale errors in both sample and line directions corresponding to four pixels in a TM image, and skew corresponding to three pixels.

Kieffer, H. H.↗

Intraband Radiometric Performance of the LANDSAT-4 Thematic Mapper

Radiometric characteristics of the LANDSAT 4 Thematic Mapper (TM) that can be established without absolute calibration of spectral data are examined. The analysis is based on radiometrically raw (B type) data of three daytime and two nighttime scenes. A set of 512 lines are examined on an individual detector basis. Subscenes selected for uniform-radiance are used to characterize subtle radiometric differences and noise problems. Virtually all nonideal performance is incorporated into the fully processed (P type) images, but disguised by the geometric resampling technique.

Kieffer, H. H.↗

Intraband Radiometric Performance of the LANDSAT 4 Thematic Mapper

Those radiometric characteristics of the LANDSAT 4 thematic mapper (TM) that could be established without absolute calibration of spectral data were examined. Radiometrically raw (B type) data of three daytime and two nighttime scenes were used, including TM scenes from Washington, DC; northeast Arkansas; Cape Cod, MA; Roanoke, VA; Richmond, VA; and Silver Bell, AZ. The effective resolution in radiance is degraded by a factor of about 2 by the irregular width of the digital levels. Underpopulated levels are consistent over all bands and detectors, and are spaced an average of 4 digital numbers (DN) apart. In band 6, level 127 is avoided by a factor 30. Several detectors exhibit a change of gain with a period of several scans; the largest effect is about 4%. At high contrast boundaries, some of the detectors in band 5 commonly overshoot by several DN and require about 30 samples to recover. The high frequency noise level of each detector was characterized by the standard deviation of the first derivative in the sample direction across a flat field. A coherent-sinusoidal-noise pattern is evident in detector 1 of band 3. The correlation between the six reflective bands was determined and used to select three groups of bands whose aggregate first principal components contain the greatest total information. A composite of the first components of bands 1, 2, 3, bands 5 and 7, and band 4, together containing 89% of the information in the reflectance bands, has reduced the effect of noise.

Kieffer, H. H.↗

Gain saturation in semiconductor lasers - Theory and experiment

The semiconductor stimulated gain saturation model of Zee has been extended using reasonable approximations to obtain an analytical solution for the gain saturation process in PbSnTe and to determine the limit to single mode power directly from the gain expression, the intraband relaxation time, and device and material parameters. The theoretical results are compared with experimental observations for single transverse mode cavity narrow stripe buried heterostructure PbSnTe lasers. Those results are interpreted in terms of an intraband relaxation time on the order of 2 x 10 to the -12th s in the temperature range 20-80 K.

Kasemset, D.↗

An analysis of Landsat-4 Thematic Mapper geometric properties

Landsat-4 Thematic Mapper data of Washington, DC, Harrisburg, PA, and Salton Sea, CA were analyzed to determine geometric integrity and conformity of the data to known earth surface geometry. Several tests were performed. Intraband correlation and interband registration were investigated. No problems were observed in the intraband analysis, and aside from indications of slight misregistration between bands of the primary versus bands of the secondary focal planes, interband registration was well within the specified tolerances. A substantial number of ground control points were found and used to check the images' conformity to the Space Oblique Mercator (SOM) projection of their respective areas. The means of the residual offsets, which included nonprocessing related measurement errors, were close to the one pixel level in the two scenes examined. The Harrisburg scene residual mean was 28.38 m (0.95 pixels) with a standard deviation of 19.82 m (0.66 pixels), while the mean and standard deviation for the Salton Sea scene were 40.46 (1.35 pixels) and 30.57 m (1.02 pixels), respectively. Overall, the data were judged to be a high geometric quality with errors close to those targeted by the TM sensor design specifications.

Walker, R. E.↗

Optical conductivity of alpha-Mn

The optical constants were measured at room temperature in the photon-energy range 0.6 to 6.5 eV on evaporated thin films. Evaporation conditions were chosen that gave the alpha-Mn crystal structure with reasonably large grains. The optical conductivity was separated into intraband and interband contributions by fitting to the Drude formula at low energies. The results are anomalous in comparison to other 3d transition metals. The free-electron lifetime is exceptionally sort (in agreement with the large dc resistivity of Mn), and the interband transitions seem unusually weak at the lower energies. Possible explanations related to the complicated crystal structure of alpha-Mn are discussed.

Scoles, K. J.↗

Longitudinal mode behavior of PbSnTe buried heterostructure lasers

Experimental results are reported on the longitudinal mode characteristics of PbSnTe buried heterostructure laser diodes operating at 10 microns. It is found that both 'wide' (5 microns) and 'narrow' (2 microns) stripe lasers operate in a single longitudinal mode over a range up to two times the threshold, as expected on the basis of the homogeneous gain model. However, a systematic change to multimode operation is found above this pumping level, which this model cannot explain. The observed phenomenon is explained by spectral inhomogeneity with an intraband relaxation time of the order of 2 ps.

Kasemset, D.↗

Optical conductivity of alpha-Mn

The optical constants were measured at room temperature in the photon-energy range 0.6-6.5 eV on evaporated thin films. Evaporation conditions were chosen that gave the alpha-Mn crystal structure with relatively large grains. The optical conductivity was separated into intraband and interband contributions by fitting to the Drude formula at low energies. The results are anomalous in comparison to other 3d transition metals: the free-electron lifetime is exceptionally short (in agreement with the large dc resistivity of Mn), and the interband transitions seem unusually weak at the lower energies. Possible explanations related to the complicated crystal structure of alpha-Mn with its loss of point symmetry at the atom sites are discussed.

Scoles, K. J.↗

An Analysis LANDSAT-4 Thematic Mapper Geometric Properties

LANDSAT Thematic Mapper P-data of Washington, D. C., Harrisburg, PA, and Salton Sea, CA are analyzed to determine magnitudes and causes of error in the geometric conformity of the data to known Earth surface geometry. Several tests of data geometry are performed. Intraband and interband correlation and registration are investigated, exclusive of map based ground truth. The magnitudes and statistical trends of pixel offsets between a single band's mirror scans (due to processing procedures) are computed, and the inter-band integrity of registration is analyzed. A line to line correlation analysis is included.

Walker, R. E.↗

Investigation of LANDSAT D Thematic Mapper geometric performance: Line to line and band to band registration

The geometric accuray of LANDSAT TM raw data of Toulouse (France) raw data of Mississippi, and preprocessed data of Mississippi was examined using a CDC computer. Analog images were restituted on the VIZIR SEP device. The methods used for line to line and band to band registration are based on automatic correlation techniques and are widely used in automated image to image registration at CNES. Causes of intraband and interband misregistration are identified and statistics are given for both line to line and band to band misregistration.

Begni, G.↗

Thermal emission from particulate surfaces: A comparison of scattering models with measured spectra

Emissivity spectra of particulate mineral samples are highly dependent on particle size when that size is comparable to the wavelength of light emitted (5-50 micrometers for the midinfrared). Proper geologic interpretation of data from planetary infrared spectrometers will require that these particle size effects be well understood. To address this issue, samples of quartz powders were produced with narrow, well-characterized particle size distributions. Mean particle diameters in these samples ranged from 15 to 227 micrometers. Emission spectra of these powders allow the first detailed comparison of the complex spectral variations with particle size observed in laboratory data with the predictions of radiative transfer models. Four such models are considered here. Hapke's relectance theory (converted to emissivity via Kirchoff's law) is the first model tested. Hapke's more recently published emission theory is also employed. The third model, the 'Mie/Conel' model, uses Mie single scattering with a two-stream approximation for multiple scattering. This model, like the first, is a converted reflec- tance model. Mie scattering assumes particles are both spherical and well separated, which is not true for the quartz powders, but includes diffraction effects. The fourth model uses the Mie solution for single scattering by spheres and inputs those results into the multiple scattering formalism of Hapke's emission theory. The results of the four models are considered in relation to the values of the optical constants n and k. We have grouped these as class 1 (k large), class 2 (k moderate, n is approximately 2), class 3 (k small, n is approximately 2), and class 4 (k small, n is approximately 1). In general, the Mie/Hapke hybrid model does best at predicting variations with grain size. In particular, it predicts changes of the correct pattern, although incorrect magnitude, for class 1 bands, where large increases in emissivity with decreasing grain size are observed. This model also does an excellent job on moderate (class 2) and very weak and intraband (class 3) regions, and correctly predicts the emission maximum and its invariance with grain size near the Christiansen frequency (class 4). The Mie/Hapke hybrid model also has the fewest free parameters of the four models examined, while maintaining the most physical treatment of the radiative transfer. The Mie/Conel model performs as well as the Mie/Hapke hybrid model in strong bands (class 1) but does not accurately model the behavior of moderate (class 2) and very weak (class 3) bands.

Moersch, J. E.↗

Computational Modeling of Semiconductor Dynamics at Femtosecond Time Scales

The main objective of the Joint-Research Interchange NCC2-5149 was to develop computer codes for accurate simulation of femtosecond pulse propagation in semiconductor lasers and semiconductor amplifiers [I]. The code should take into account all relevant processes such as the interband and intraband carrier relaxation mechanisms and the many-body effects arising from the Coulomb interaction among charge carriers [2]. This objective was fully accomplished. We made use of a previously developed algorithm developed at NASA Ames [3]-[5]. The new algorithm was tested on several problems of practical importance. One such problem was related to the amplification of femtosecond optical pulses in semiconductors. These results were presented in several international conferences over a period of three years. With the help of a postdoctoral fellow, we also investigated the origin of instabilities that can lead to the formation of femtosecond pulses in different kinds of lasers. We analyzed the occurrence of absolute instabilities in lasers that contain a dispersive host material with third-order nonlinearities. Starting from the Maxwell-Bloch equations, we derived general multimode equations to distinguish between convective and absolute instabilities. We find that both self-phase modulation and intensity-dependent absorption can dramatically affect the absolute stability of such lasers. In particular, the self-pulsing threshold (the so-called second laser threshold) can occur at few times the first laser threshold even in good-cavity lasers for which no self-pulsing occurs in the absence of intensity-dependent absorption. These results were presented in an international conference and published in the form of two papers.

Agrawal, Govind P.↗

Computational Modeling of Ultrafast Pulse Propagation in Nonlinear Optical Materials

There is an emerging technology of photonic (or optoelectronic) integrated circuits (PICs or OEICs). In PICs, optical and electronic components are grown together on the same chip. rib build such devices and subsystems, one needs to model the entire chip. Accurate computer modeling of electromagnetic wave propagation in semiconductors is necessary for the successful development of PICs. More specifically, these computer codes would enable the modeling of such devices, including their subsystems, such as semiconductor lasers and semiconductor amplifiers in which there is femtosecond pulse propagation. Here, the computer simulations are made by solving the full vector, nonlinear, Maxwell's equations, coupled with the semiconductor Bloch equations, without any approximations. The carrier is retained in the description of the optical pulse, (i.e. the envelope approximation is not made in the Maxwell's equations), and the rotating wave approximation is not made in the Bloch equations. These coupled equations are solved to simulate the propagation of femtosecond optical pulses in semiconductor materials. The simulations describe the dynamics of the optical pulses, as well as the interband and intraband.

Goorjian, Peter M.↗

Ultrafast Modulation and Switching of Quantum-Well Lasers using Terahertz Fields

Modulation and switching of semiconductor lasers are important for laser-based information technology. Typically the speed of modulation and switching is limited by interband processes such as stimulated and spontaneous recombinations which occur on a nanosecond time scale. This is why the diode laser modulation has been restricted to tens of GHz. Modulation at higher speed is highly desirable as the information technology enters into the so-called tera-era. In this paper, we study the possibility of utilizing THz-field-induced plasma heating to modulate quantum-well lasers. This is a timely study since, with the advancement of THz solid-state sources and free-electron lasers, THz physics and related technology is currently coming out of its infancy. The investigation of interplaying THz and optical fields is also of intruiging fundamental interest. First, we introduce theoretical plasma heating results for the quantum-well optical amplifier in the presense of an intense half-cycle THz pulse. The heated carrier distributions are then utilized to calculate the THz-pulse-induced change in refractive index and gain profile. Since the electron-hole-plasma is heated using intraband transitions, we circumvent the usual complications due to an overall change in density, and the nonlinear recovery is governed solely by the carrier-LO-phonon interactions, typically 5 ps for a complete recovery. This procedure implies THz and sub-THz switching and recovery rates, respectively; using either gain modulation or index modulation. Plasma heating via steady-state THz fields is also studied. Finally, numerical simulation of a coupled set of equations to investigate the THz modulation based on a simplified model for quantum-well lasers is presented. Our results show that a semiconductor laser can be modulated at up to 1 THz with little distortion with a THz field amplitude at the order of a few kV/cm. Laser responses to a change in THz frequency will be shown. Constraints, practicalities, and applications will be discussed.

Ning, Cun-Zheng↗