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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1997

Ion Figuring of Replicated X-Ray Optics

This investigation included experiments to demonstrate ion beam figuring effects on electroless nickel with the expressed desire to figure X-ray optic mandrels. It was important to establish that ion beam figuring did not induce any adverse effects to the nickel surface. The ion beam has consistently been shown to be an excellent indicator of the quality of the subsurface. Polishing is not the only cause for failure in the ion beam final figuring process, the material composition is equally important. Only by careful consideration of both these factors can the ion beam final figuring process achieve its greatest potential. The secondary goal was to construct a model for representing the ion beam material removal rate. Representing the ion beam removal rate is only an approximation and has a number of limiting factors. The resolution of the metrology apparatus limits the modeling of the beam function as well. As the surface error corrections demand more precision in the final figuring, the model representing beam function must be equally precise. The precision to which the beam function can be represented is not only determined by the model but also by the measurements producing that model. The method developed for determining the beam function has broad application to any material destined to be ion beam figured.

Cantey, Thomas M.↗
NASA NTRS2017

Keck Segment Surface Artifacts: Impacts on Segment Phasing and Image Quality

We show that the segments of the Keck telescopes su er from small but signi cant surface artifacts that limit segment phasing accuracy. Both the segment surface artifacts themselves and the limits they place on segment phasing have important implications for adaptive optics, high contrast imaging, and seeing limited observations. These surface artifacts are likely by-products of the segment polishing, most likely the Ion Beam Figuring (IBF) process that constitutes the nal step of the segment surface guring. The surface artifacts di ract a signi cant amount of light out past 3.5 arcseconds and generate chromatic e ects that limit segment phasing accuracy. We present on-sky measurements of the di racted intensity. Segment surface roughness measurements are also presented, which show that surface roughness is not the source of the problem. These results have direct relevance to segment manufacturing for the Thirty Meter Telescope (TMT) and other segmented mirror telescopes.

Brock, Neal↗
NASA NTRS2018

Interferometric Characterization of Keck Segment Edge Errors

The Keck telescope segments were manufactured by stressed mirror polishing of large circular pieces of Zerodur that were then cut into hexagons and finished by Ion Beam Figuring (IBF). It has long been believed that this process results in segments with little or no edge effects. As a result, this same general approach is planned for segment manufacturing for the Thirty Meter Telescope (TMT) and the European Extremely Large Telescope (E-ELT). However, recent measurements at the Keck telescope suggest that at least some of the Keck segments have significant aberrations within 60 mm of the edge. These aberrations impact the telescope phasing and the overall telescope image quality. We present interferometric measurements of multiple Keck segments, characterizing the surface errors near the edges over spatial periods from 5 cm down to 1 mm. We show that the largest phasing and image quality effects are due to plateaus of unremoved material, left behind after IBF as a result of obscuration by the IBF supports. Apart from these plateaus, the edge quality is relatively good, though not as good as in the segment interiors. Some residual phasing and image quality effects remain, and these are not currently understood.

Martinek, Stephen J.↗
NASA NTRS1996

Investigation of ion-beam machining methods for replicated x-ray optics

The final figuring step in the fabrication of an optical component involves imparting a specified contour onto the surface. This can be expensive and time consuming step. The recent development of ion beam figuring provides a method for performing the figuring process with advantages over standard mechanical methods. Ion figuring has proven effective in figuring large optical components. The process of ion beam figuring removes material by transferring kinetic energy from impinging neutral particles. The process utilizes a Kaufman type ion source, where a plasma is generated in a discharge chamber by controlled electric potentials. Charged grids extract and accelerate ions from the chamber. The accelerated ions form a directional beam. A neutralizer outside the accelerator grids supplies electrons to the positive ion beam. It is necessary to neutralize the beam to prevent charging workpieces and to avoid bending the beam with extraneous electro-magnetic fields. When the directed beam strikes the workpiece, material sputters in a predicable manner. The amount and distribution of material sputtered is a function of the energy of the beam, material of the component, distance from the workpiece, and angle of incidence of the beam. The figuring method described here assumes a constant beam removal, so that the process can be represented by a convolution operation. A fixed beam energy maintains a constant sputtering rate. This temporally and spatially stable beam is held perpendicular to the workpiece at a fixed distance. For non-constant removal, corrections would be required to model the process as a convolution operation. Specific figures (contours) are achieved by rastering the beam over the workpiece at varying velocities. A unique deconvolution is performed, using series-derivative solution developed for the system, to determine these velocities.

Drueding, Thomas W.↗
NASA NTRS2005

Making AlN(x) Tunnel Barriers Using a Low-Energy Nitrogen-Ion Beam

A technique based on accelerating positive nitrogen ions onto an aluminum layer has been demonstrated to be effective in forming thin (<2 nm thick) layers of aluminum nitride (AlN(x)) for use as tunnel barriers in Nb/Al-AlN(x)/Nb superconductor/insulator/ superconductor (SIS) Josephson junctions. AlN(x) is the present material of choice for tunnel barriers because, to a degree greater than that of any other suitable material, it offers the required combination of low leakage current at high current density and greater thermal stability. While ultra-thin AlN films with good thickness and stoichiometry control are easily formed using techniques such as reactive molecular beam epitaxy and chemical vapor deposition, growth temperatures of 900 C are necessary for the dissociative adsorption of nitrogen from either nitrogen (N2) or ammonia (NH3). These growth temperatures are prohibitively high for the formation of tunnel barriers on Nb films because interfacial reactions at temperatures as low as 200 to 300 C degrade device properties. Heretofore, deposition by reactive sputtering and nitridation of thin Al layers with DC and RF nitrogen plasmas have been successfully used to form AlN barriers in SIS junctions. However, precise control over critical current density Jc has proven to be a challenge, as is attaining adequate process reproducibility from system to system. The present ion-beam technique is an alternative to the plasma or reactive sputtering techniques as it provides a highly controlled arrival of reactive species, independent of the electrical conditions of the substrate or vacuum chamber. Independent and accurate control of parameters such as ion energy, flux, species, and direction promises more precise control of film characteristics such as stoichiometry and thickness than is the case with typical plasma processes. In particular, the background pressure during ion-beam nitride growth is 2 or 3 orders of magnitude lower, minimizing the formation of compounds with contaminants, which is critical in devices the performance of which is dictated by interfacial characteristics. In addition, the flux of incoming species can be measured in situ using ion probes so that the dose can be controlled accurately. The apparatus used in the present ion-beam technique includes a vacuum chamber containing a commercial collimated- ion-beam source, a supply of nitrogen and argon, and an ion probe for measuring the ion dose. Either argon or nitrogen can be used as the feed gases for the ion source, depending on whether cleaning of the substrate or growth of the nitride, respectively, is desired. Once the Nb base electrode and Al proximity layer have been deposited, the N2 gas line to the ion beam is vented and purged, and the ion-source is turned on until a stable discharge is obtained. The substrate is moved over the ion-beam source to expose the Al surface layer to the ion beam (see figure) for a specified duration for the formation of the nitride tunnel barrier. Next, the Nb counter-electrode layer is deposited on the nitride surface layer. The Nb/Al- AlN(x)/Nb-trilayer-covered substrate is then patterned into individual devices by use of conventional integrated-circuit processing techniques.

Kaul, Anupama↗
NASA NTRS2019

Highly Absorptive Pupil Mask Fabricated with Black Silicon

Many of NASA’s direct imaging of exoplanet missions and projects require fabricated coronagraph masks to control scattering and diffraction of light. The designed, patterned mask intended for the coronagraphic testbeds are highly absorptive in the visible range on non-metallic regions. In this work, we employed the cryogenic etching process to fabricate black silicon (BSi) to achieve a high aspect ratio (HAR) structures with higher etch rate than conventional reactive ion etching (REI). Recent bidirectional reflectance distribution function (BRDF) measurements of uniformly etched BSi on silicon wafer show highly diffusive BSi with a specular reflective component in the orders of seven magnitudes lower than the total hemispherical reflectance when the polarized or non-polarized incident beam is used.

black-silicon↗
NASA NTRS1994

Neutral ion sources in precision manufacturing

Ion figuring of optical components is a relatively new technology that can alleviate some of the problems associated with traditional contact polishing. Because the technique is non contacting, edge distortions and rib structure print through do not occur. This initial investigation was aimed at determining the effect of ion figuring on surface roughness of previously polished or ductile ground ceramic optical samples. This is the first step in research directed toward the combination of a pre-finishing process (ductile grinding or polishing) with ion figuring to produce finished ceramic mirrors. The second phase of the project is focusing on the development of mathematical algorithms that will deconvolve the ion beam profile from the surface figure errors so that these errors can be successfully removed from the optical components. In the initial phase of the project, multiple, chemical vapor deposited silicon carbide (CVD SiC) samples were polished or ductile ground to specular or near-specular roughness. These samples were then characterized to determine topographic surface information. The surface evaluation consisted of stylus profilometry, interferometry, and optical and scanning electron microscopy. The surfaces, were ion machined to depths from 0-5 microns. The finished surfaces were characterized to evaluate the effects of the ion machining process with respect to the previous processing methods and the pre-existing subsurface damage. The development of the control algorithms for figuring optical components has been completed. These algorithms have been validated with simulations and future experiments have been planned to verify the methods. This paper will present the results of the initial surface finish experiments and the control algorithms simulations.

Fawcett, Steven C.↗
NASA NTRS2005

Miniature Focusing Time-of-Flight Mass Spectrometer

An improved miniature time-of-flight mass spectrometer has been developed in a continuing effort to minimize the sizes, weights, power demands, and costs of mass spectrometers for such diverse applications as measurement of concentrations of pollutants in the atmosphere, detecting poisonous gases in mines, and analyzing exhaust gases of automobiles. Advantageous characteristics of this mass spectrometer include the following: It is simple and rugged. Relative to prior mass spectrometers, it is inexpensive to build. There is no need for precise alignment of its components. Its mass range is practically unlimited Relative to prior mass spectrometers, it offers high sensitivity (ability to measure relative concentrations as small as parts per billion). Its resolution is one dalton (one atomic mass unit). An entire mass spectrum is recorded in a single pulse. (In a conventional mass spectrometer, a spectrum is recorded mass by mass.) The data-acquisition process takes only seconds. It is a lightweight, low-power, portable instrument. Although time-of-flight mass spectrometers (TOF-MSs) have been miniaturized previously, their performances have not been completely satisfactory. An inherent adverse effect of miniaturization of a TOF-MS is a loss of resolution caused by reduction of the length of its flight tube. In the present improved TOF-MS, the adverse effect of shortening the flight tube is counteracted by (1) using charged-particle optics to constrain ion trajectories to the flight-tube axis while (2) reducing ion velocities to increase ion flight times. In the present improved TOF-MS, a stream of gas is generated by use of a hypodermic needle. The stream of gas is crossed by an energy-selected, pulsed beam of electrons (see Figure 1). The ions generated by impingement of the electrons on the gas atoms are then focused by three cylindrical electrostatic lenses, which constitute a segmented flight tube. After traveling along the flight tube, the ions enter a charged-particle detector. The output of the detector is fed to a counting circuit to obtain data on the counting rate as a function of time. Inasmuch as time of flight is directly proportional to the ion mass, a plot of the counting rate versus time of flight is equivalent to a mass spectrum (see Figure 2).

Kanik, Isik↗
NASA NTRS2004

Ion Milling of Sapphire

The ion milling of sapphire is a complicated operation due to several characteristics of the material itself. It is a relatively hard transparent nonconductive crystalline material that does not transfer heat nearly as well as metals that have been successfully ion milled in the past. This investigation involved designing an experimental arrangement, using existing ion milling equipment, as the precursor to figuring the surface of sapphire and other insulating optical materials. The experimental arrangement employs a laser probe beam to constantly monitor the stresses being induced in the material, as it is being ion milled. The goal is to determine if the technique proposed would indeed indicate the stress being induced in the material so that these stresses can be managed to prevent failure of the optic.

Gregory, Don A.↗
NASA NTRS2003

MEMS-Based Piezoelectric/Electrostatic Inchworm Actuator

A proposed inchworm actuator, to be designed and fabricated according to the principles of microelectromechanical systems (MEMS), would effect linear motion characterized by steps as small as nanometers and an overall range of travel of hundreds of microns. Potential applications for actuators like this one include precise positioning of optical components and active suppression of noise and vibration in scientific instruments, conveyance of wafers in the semiconductor industry, precise positioning for machine tools, and positioning and actuation of micro-surgical instruments. The inchworm motion would be generated by a combination of piezoelectric driving and electrostatic clamping. The actuator (see figure), would include a pair of holders (used for electrostatic clamping), a slider (the part that would engage in the desired linear motion), a driver, a piezoelectric stack under the driver, and a pair of polymer beams centrally clamped to the flexure beam via a T bar. The holders would be held stationary. One end of the piezoelectric stack would be held stationary; the other end would be connected to the bottom of the driver, which would be free to move up and down. All of these components except the piezoelectric stack and the polymer beams would be micromachined from a 500- m-thick silicon wafer by deep reactive-ion etching. The inchworm motion would be perpendicular to the broad faces of the wafer (perpendicular to the plane of the figure). The combination of the polymer beams and the centrally clamped flexure beam would spring-bias the slider into a position such that, in the absence of electrostatic clamping, the gap between the slider on the one hand and both the driver and the holder on the other hand would be no more than a few microns. This arrangement would make it possible to electrostatically pull the slider into contact with either the holders or the driver at a clamping force of the order of 1 N by applying a reasonably small voltage (of the order of 100 V).

Yang, Eui-Hyeok↗
NASA NTRS2004

Patterned Growth of Carbon Nanotubes or Nanofibers

A method and apparatus for the growth of carbon nanotubes or nanofibers in a desired pattern has been invented. The essence of the method is to grow the nanotubes or nanofibers by chemical vapor deposition (CVD) onto a patterned catalyst supported by a substrate. The figure schematically depicts salient aspects of the method and apparatus in a typical application. A substrate is placed in a chamber that contains both ion-beam sputtering and CVD equipment. The substrate can be made of any of a variety of materials that include several forms of silicon or carbon, and selected polymers, metals, ceramics, and even some natural minerals and similar materials. Optionally, the substrate is first coated with a noncatalytic metal layer (which could be a single layer or could comprise multiple different sublayers) by ion-beam sputtering. The choice of metal(s) and thickness(es) of the first layer (if any) and its sublayers (if any) depends on the chemical and electrical properties required for subsequent deposition of the catalyst and the subsequent CVD of the carbon nanotubes. A typical first-sublayer metal is Pt, Pd, Cr, Mo, Ti, W, or an alloy of two or more of these elements. A typical metal for the second sublayer or for an undivided first layer is Al at a thickness .1 nm or Ir at a thickness .5 nm. Proper choice of the metal for a second sublayer of a first layer makes it possible to use a catalyst that is chemically incompatible with the substrate. In the next step, a mask having holes in the desired pattern is placed over the coated substrate. The catalyst is then deposited on the coated substrate by ion-beam sputtering through the mask. Optionally, the catalyst could be deposited by a technique other than sputtering and/or patterned by use of photolithography, electron- beam lithography, or another suitable technique. The catalytic metal can be Fe, Co, Ni, or an alloy of two or more of these elements, deposited to a typical thickness in the range from 0.1 to 20 nm.

Delzeit, Lance D.↗
NASA NTRS2012

Exsolution of Iron-Titanium Oxides in Magnetite in Miller Range (MIL) 03346 Nakhlite: Evidence for Post Crystallization Reduction in the Nakhlite Cumulate Pile

MIL 03346 is one of the most mesostasis-rich nakhlites [1] and thought to have equilibrated at oxygen fugacities near the fayalite-magnetite-quartz oxygen (FMQ) buffer ([2,3]). Studies of FeTi oxides in nakhlites have led to additional constraints on their equilibration temperatures and fO2s [4,5,6,7]. Comparison of these results to fO2s calculated for shergottites indicates that nakhlites are among the most oxidized samples from the martian meteorite suite [2]. The mesostasis of MIL 03346 contains skeletal titanomagnetite. Several scientists noticed several years ago (e.g. [8]) that this titanomagnetite contains very fine oxidation-driven exsolution lamellae (Figure 1). However, the lamellae are so small that they cannot be characterized by electron microprobe analysis (EMPA). Here we select several areas for focused ion beam (FIB) extraction, prepare transmission electron microscopy (TEM) foils, and identify and analyze the lamellae using TEM at the Johnson Space Center (JSC). The resulting analyses are combined with previous work on nakhlites to interpret the thermal and oxidation history of this meteorite group.

Righter, Kevin↗
NASA NTRS2002

Ion Milling of Sapphire

The ion figuring system at the Marshall Space Flight Center has been successfully used for at least three previous investigations into the ion milling of metals. The research was directed toward improving the surface quality of X-ray directing optics. These studies were performed on surfaces that were already hand polished to an excellent surface quality and were intended to remove the residual unwanted figure left by those techniques. The ion milling was typically carried out on test surfaces or mandrels that were several centimeters in width and length. The good thermal conductivity of the metal samples allowed the ion beam to be directed onto the sample for an indefinite period of time. This is not true of sapphire or most electrical insulators and problems have arisen in recent attempts to ion mill thin samples of sapphire. The failure and fracture of the material was likely due to thermal stresses and the relatively low thermal conductivity of sapphire (compared to most metals), These assumed stresses actually provided the key as to how they might be monitored. A thermal gradient in the sapphire sample will induce an effective index of refraction change and because of the shape constraint and the crystal structure and simple thermal expansion, this index change will be nonuniform across the sample. In all but simple cubic crystal structures, this leads to a spatially nonuniform optical retardance induced on any polarized optical beam traversing the sample, and it is this retardance that can be monitored using standard polarimetric procedures.

Don A. Gregory↗
NASA NTRS1999

Epitaxial Ferroelectric Ba(0.5)Sr(0.5)TiO3 Thin Films for Room-Temperature High-Frequency Tunable Element Applications

Perovskite Ba(0.5)SR(0.5)TiO3 thin films have been synthesized on (001) LaAl03 substrates by pulsed laser ablation. Extensive X-ray diffraction, rocking curve, and pole-figure studies suggest that the films are c-axis oriented and exhibit good in-plane relationship of <100>(sub BSTO)//<100>(sub LAO). Rutherford Backscattering Spectrometry studies indicate that the epitaxial films have excellent crystalline quality with an ion beam minimum yield chi(sub min) Of only 2.6 %. The dielectric property measurements by the interdigital technique at 1 MHz show room temperature values of the relative dielectric constant, epsilon(sub r), and loss tangent, tan(sub delta), of 1430 and 0.007 with no bias, and 960 and 0.001 with 35 V bias, respectively. The obtained data suggest that the as-grown Ba(0.5)SR(0.5)TiO3 films can be used for development of room-temperature high-frequency tunable elements.

Chen, C. L.↗
NASA NTRS2005

Texturing Blood-Glucose-Monitoring Optics Using Oxygen Beams

A method has been invented for utilizing directed, hyperthermal oxygen atoms and ions for texturing tips of polymeric optical fibers or other polymeric optical components for use in optical measurement of concentration of glucose in blood. The required texture of the sensory surface of such a component amounts to a landscape of microscopic hills having high aspect ratios (hills taller than they are wide), with an average distance between hills of no more than about 5 m. This limit on the average distance between hills is chosen so that blood cells (which are wider) cannot enter the valleys between the hills, where they could obstruct optical sensing of glucose in the blood plasma. On the other hand, the plasma is required to enter the valleys, and a high aspect ratio is intended to maximize the hillside and valley surface area in contact with the plasma, thereby making it possible to obtain a given level of optical glucose- measurement sensitivity with a relatively small volume of blood. The present method of texturing by use of directed, hyperthermal (particle energy >1 eV) oxygen atoms and ions stands in contrast to a prior method of texturing by use of thermal monatomic oxygen characterized by a temperature of the order of 0.5 eV. The prior method yields low-aspect- ratio (approximately hemispherical) craters that are tens of microns wide . too wide to exclude blood cells. The figure schematically depicts parts of a typical apparatus for texturing according to the present method. One or more polymeric optical components to be textured (e.g., multiple optical fibers bundled together for simultaneous processing) are mounted in a vacuum chamber facing a suitable ion- or atom-accelerating device capable of generating a beam of oxygen atoms and/or ions having kinetic energies >1 eV. Typically, such a device includes a heated cathode, in which case it is desirable to interpose a water-cooled thermal-radiation shield to prevent melting of the polymeric component(s) to be textured. In operation, the chamber is evacuated to a pressure .10.5 torr (less than or equal to approximately 1.3 mPa), then the beam is turned on. The resulting texture is characterized by approximately conical hills having aspect ratios greater than 1. In experiments, it was demonstrated that separations between adjacent hills can be made .1 m and that the separations and heights of the hills can be varied by varying the fluence of monatomic oxygen and/or oxygen ions.

Banks, Bruce↗
NASA NTRS2006

Domed, 40-cm-Diameter Ion Optics for an Ion Thruster

Improved accelerator and screen grids for an ion accelerator have been designed and tested in a continuing effort to increase the sustainable power and thrust at the high end of the accelerator throttling range. The accelerator and screen grids are undergoing development for intended use as NASA s Evolutionary Xenon Thruster (NEXT) a spacecraft thruster that would have an input-power throttling range of 1.2 to 6.9 kW. The improved accelerator and screen grids could also be incorporated into ion accelerators used in such industrial processes as ion implantation and ion milling. NEXT is a successor to the NASA Solar Electric Propulsion Technology Application Readiness (NSTAR) thruster - a state-of-the-art ion thruster characterized by, among other things, a beam-extraction diameter of 28 cm, a span-to-gap ratio (defined as this diameter divided by the distance between the grids) of about 430, and a rated peak input power of 2.3 kW. To enable the NEXT thruster to operate at the required higher peak power, the beam-extraction diameter was increased to 40 cm almost doubling the beam-extraction area over that of NSTAR (see figure). The span-to-gap ratio was increased to 600 to enable throttling to the low end of the required input-power range. The geometry of the apertures in the grids was selected on the basis of experience in the use of grids of similar geometry in the NSTAR thruster. Characteristics of the aperture geometry include a high open-area fraction in the screen grid to reduce discharge losses and a low open-area fraction in the accelerator grid to reduce losses of electrically neutral gas atoms or molecules. The NEXT accelerator grid was made thicker than that of the NSTAR to make more material available for erosion, thereby increasing the service life and, hence, the total impulse. The NEXT grids are made of molybdenum, which was chosen because its combination of high strength and low thermal expansion helps to minimize thermally and inertially induced deflections of the grids. A secondary reason for choosing molybdenum is the availability of a large database for this material. To keep development costs low, the NEXT grids have been fabricated by the same techniques used to fabricate the NSTAR grids. In tests, the NEXT ion optics have been found to outperform the NSTAR ion optics, as expected.

Soulas, George C.↗
NASA NTRS2004

Laboratory Astrophysics using a Microcalorimeter and Bragg Crystal Spectrometer on an Electron Beam Ion Trap

During the past year we have been preparing our new microcalorimeter system for permanent delivery to the NIST EBIT. Unfortunately, there have been delays due to technical difficulties in the fabrication of the two-stage adiabatic demagnetization refrigerator and in the life expectancy of the thin windows used for internal thermal baffling of the infrared radiation. These problems have been solved and we are completing tests of the entire system and it will be set up at NIST during the first week of May. Several photos of the new system are shown in Figures 1A and 1B. This microcalorimeter spectrometer only requires helium refills every three days (as opposed to every 24 hours) and it will hold a temperature! of 65 mK for up to 48 hours (as opposed to 8 hours). Consequently, the efficiency of data acquisition will improve dramatically. In parallel we have published a paper that reviews our previous work (Takacs et al. 2003), especially on Fe XVII, in the context of recent measurements by other groups. This paper is included. We highlight a recent measurement of a broad band spectrum of Fe in Figure 2 that simultaneously includes L and K radiation. It is compared with the simulated spectrum of the Perseus Cluster that one could expect to obtain with a microcalorimeter in the focus of a grazing incidence telescope such as the one being designed for Constellation X. Both the charge state distributions and the relative intensity ratios of the emission lines within the particular charge state are very similar in the two spectra. This further demonstrates the importance and relevance of the laboratory measurements in predicting the components of cosmic spectra.

Brinton, John C.↗
NASA NTRS2006

Ion Milling On Steps for Fabrication of Nanowires

Arrays of nanowires having controlled dimensions can now be fabricated on substrates, optionally as integral parts of multilayer structures, by means of a cost-effective, high-yield process based on ion milling on steps. Nanowires made, variously, of semiconductors or metals are needed as components of sensors and high-density electronic circuits. Unlike prior processes used to fabricate nanowires, the present process does not involve electron-beam lithography, manipulation of nanoscopic objects by use of an atomic-force microscope, or any other technique that is inherently unsuitable for scaling up to mass production. In comparison with the prior processes, this process is rapid and simple. Wires having widths as small as a few tens of nanometers and lengths as long as millimeters have been fabricated by use of this process. The figure depicts a workpiece at different stages of the process. A silicon dioxide substrate is coated with a photoresist or poly(methyl methacrylate) [PMMA] to a thickness of as much as 500 nm. The photoresist or PMMA is patterned to form edges where wires are to be formed. A metal - either Pt or Ti - is deposited, by sputtering, to a thickness of as much as 200 nm. By ion milling at normal incidence, the thickness of the metal deposit is reduced until the only metal that remains is in the form of wall-like nanowires along the edges of the photoresist or PMMA. Finally, an oxygen plasma is used to remove the photoresist or PMMA, leaving only the nanowires on the substrate.

Yun, Minhee↗