The presence of deep levels in ion implanted junctions.
Deep trapping levels caused by ion implantation doping, discussing level effects on electrical characteristics of zinc implanted GaAs diodes
Hunsperger, R. G.↗
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Suppressing Loss of Ions in an Atomic Clock
An improvement has been made in the design of a compact, highly stable mercury- ion clock to suppress a loss of ions as they are transferred between the quadrupole and higher multipole ion traps. Such clocks are being developed for use aboard spacecraft for navigation and planetary radio science. The modification is also applicable to ion clocks operating on Earth: indeed, the success of the modification has been demonstrated in construction and operation of a terrestrial breadboard prototype of the compact, highly stable mercury-ion clock. Selected aspects of the breadboard prototype at different stages of development were described in previous NASA Tech Briefs articles. The following background information is reviewed from previous articles: In this clock as in some prior ion clocks, mercury ions are shuttled between two ion traps, one a 16- pole linear radio-frequency trap, while the other is a quadrupole radio-frequency trap. In the quadrupole trap, ions are tightly confined and optical state selection from a 202Hg lamp is carried out. In the 16-pole trap, the ions are more loosely confined and atomic transitions are interrogated by use of a microwave beam at approximately 40.507 GHz. The trapping of ions effectively eliminates the frequency pulling that would otherwise be caused by collisions between clock atoms and the wall of a gas cell. The shuttling of the ions between the two traps enables separation of the state-selection process from the clock microwave-resonance process, so that each of these processes can be optimized independently of the other. This is similar to the operation of an atomic beam clock, except that with ions the beam can be halted and reversed as ions are shuttled back and forth between the two traps. When the two traps are driven at the same radio frequency, the strength of confinement can be reduced near the junction between the two traps, depending upon the relative phase of the RF voltage used to operate each of the two traps, and can cause loss of ions during each transit between the traps and thereby cause loss of the 40.507-GHz ion-clock resonance signal. The essence of the modification is to drive the two traps at different frequencies typically between 1.5 and 2 MHz for the quadrupole trap and a frequency a few hundred kHz higher for the 16- pole trap. A frequency difference of a few hundred kHz ensures that the ion motion caused by the trapping electric fields is small relative to the diameter of the traps. Unlike in the case in which both traps are driven at the same frequency, the trapping electric fields near the junction are not zero at all times; instead, the regions of low electric field near the junction open and close at the difference frequency. An additional benefit of making the 16-pole trap operate at higher frequency is that the strength or depth of the multipole trap can be increased independent of the quadrupole ion trap.
Prestage, John↗
Induced junction solar cell and method of fabrication
An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid of criss-crossed current collecting n+ stripes and thermally growing a thin SiO2 film, and then, using silicon-rich chemical vapor deposition (CVD), producing a layer of SiO2 having inherent defects, such as silicon interstices, which function as deep traps for spontaneous positive charges. Ion implantation increases the stable positive charge distribution for a greater inversion layer in the p-type silicon near the surface. After etching through the oxide to parallel collecting stripes, a pattern of metal is produced consisting of a set of contact stripes over the exposed collecting stripes and a diamond shaped pattern which functions as a current collection bus. Then the reverse side is metallized.
Maserjian, J.↗
The effect of process conditions on the performance of epitaxial InP solar cells
Indium phosphide solar cells have a higher resistance to electron irradiation than Si or GaAs cells of comparable junction depth. As a result, there is much interest in the use of this material for space applications. Cells of this material were made in bulk InP by a number of techniques, including ion implantation, direct diffusion in sealed ampoules, and by open tube diffusion. However, it is generally considered that the epitaxial approach will be superior to all of these techniques. The epitaxy of InP is considerably more difficult than that of gallium arsenide, for a number of reasons. Perhaps the most important is the fact that the native oxides of Indium are extremely difficult to remove, as compared to that of Gallium. In addition, thermal treatments for the desorption of these oxides often result in the formation of phosphorus vacancies and free indium on the surface. Thus, inadequate sample preparation before epitaxy, poor reactor cleaning procedures, or poor transition procedures between the growth of successive layers, all give rise to trap phenomena and to high interface recombination velocities. Moreover, the lifetime of the grown material is dominated by the occurrence of native defects, so that it is a strong function of growth parameters. These problems are of special interest to the fabrication of solar cells, where long life-time, combined with the absence of traps, is highly desirable. A study of this problem is described using a non-invasive diagnostic technique which was developed.
Borrego, J. M.↗