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Temperature and Strain Coefficient of Velocity for Langasite SAW Devices

Surface Acoustic Wave sensors on Langasite substrates are being investigated for aerospace applications. Characterization of the Langasite material properties must be performed before sensors can be installed in research vehicles. The coefficients of velocity for both strain and temperature have been determined. These values have also been used to perform temperature compensation of the strain measurements.

Wilson, W. C.↗

Modeling of a Surface Acoustic Wave Strain Sensor

NASA Langley Research Center is investigating Surface Acoustic Wave (SAW) sensor technology for harsh environments aimed at aerospace applications. To aid in development of sensors a model of a SAW strain sensor has been developed. The new model extends the modified matrix method to include the response of Orthogonal Frequency Coded (OFC) reflectors and the response of SAW devices to strain. These results show that the model accurately captures the strain response of a SAW sensor on a Langasite substrate. The results of the model of a SAW Strain Sensor on Langasite are presented

Wilson, W. C.↗

Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof

"Super-hetero-epitaxial" combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a "Tri-Unity" system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF.sub.3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

Park, Yeonjoon↗

High-Temperature Properties of Piezoelectric Langatate Single Crystals

Langasite type crystals belong to non-polar point group of 32 and do not show any phase transformations up to the melting temperature. Langatate (La3Ga(5.5)Ta(0.5)O14) demonstrates piezoelectric activity better than quartz and possesses attractive properties for high temperature sensors, resonators and filter applications. High-quality and colorless langatate crystals were grown by the Czochralski technique. The electromechanical and electrical properties of langatate crystals in different crystallographic directions were characterized at elevated temperature. The piezoelectric coefficient along x-axis was 7 pC/N as measured by a Berlincourt meter for a plate geometry with an aspect ratio of 10:1. The dielectric constant did not exhibit any significant temperature dependence (K33 approx. 21 at 30 C and K33 approx. 23 at 600 C). Loss tangent at 100 kHz remained <0.003 up to 300 C and <0.65 at 600 C. The dielectric properties along the y-axis were similar and its temperature dependence was analogous to the x-axis. Electromechanically, the inactive z-axis exhibited no resonance with K33 approx. 84 at room temperature, decreasing down to approx. 49 at 600 C. Resistivity of these crystals along x-axis decreased from approx. 6x10(exp 11) omega-cm at room temperature, to approx. 1.6x10(exp 6) omega-cm at 600 C.

Sehirlioglu, Alp↗