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At least 19 records

Processing Techniques Developed to Fabricate Lanthanum Titanate Piezoceramic Material for High-Temperature Smart Structures

Piezoelectric ceramic materials are potential candidates for use as actuators and sensors in intelligent gas turbine engines. For piezoceramics to be applied in gas turbine engines, they will have to be able to function in temperatures ranging from 1000 to 2500 F. However, the maximum use temperature for state-of-the-art piezoceramic materials is on the order of 300 to 400 F. Research activities have been initiated to develop high-temperature piezoceramic materials for gas turbine engine applications. Lanthanum titanate has been shown to have high-temperature piezoelectric properties with Curie temperatures of T(sub c) = 1500 C and use temperatures greater than 1000 C. However, the fabrication of lanthanum titanate poses serious challenges because of the very high sintering temperatures required for densification. Two different techniques have been developed at the NASA Glenn Research Center to fabricate dense lanthanum titanate piezoceramic material. In one approach, lower sintering temperatures were achieved by adding yttrium oxide to commercially available lanthanum titanate powder. Addition of only 0.1 mol% yttrium oxide lowered the sintering temperature by as much as 300 C, to just 1100 C, and dense lanthanum titanate was produced by pressure-assisted sintering. The second approach utilized the same commercially available powders but used an innovative sintering approach called differential sintering, which did not require any additive.

Goldsby, Jon C.

Fabrication of Lanthanum Telluride 14-1-11 Zintl High-Temperature Thermoelectric Couple

The development of more efficient thermoelectric couple technology capable of operating with high-grade heat sources up to 1,275 K is key to improving the performance of radioisotope thermoelectric generators. Lanthanum telluride La3-xTe4 and 14-1-11 Zintls (Yb14MnSb11) have been identified as very promising materials. The fabrication of advanced high-temperature thermoelectric couples requires the joining of several dissimilar materials, typically including a number of diffusion bonding and brazing steps, to achieve a device capable of operating at elevated temperatures across a large temperature differential (up to 900 K). A thermoelectric couple typically comprises a heat collector/ exchanger, metallic interconnects on both hot and cold sides, n-type and ptype conductivity thermoelectric elements, and cold-side hardware to connect to the cold-side heat rejection and provide electrical connections. Differences in the physical, mechanical, and chemical properties of the materials that make up the thermoelectric couple, especially differences in the coefficients of thermal expansion (CTE), result in undesirable interfacial stresses that can lead to mechanical failure of the device. The problem is further complicated by the fact that the thermoelectric materials under consideration have large CTE values, are brittle, and cracks can propagate through them with minimal resistance. The inherent challenge of bonding brittle, high-thermal-expansion thermoelectric materials to a hot shoe material that is thick enough to carry the requisite electrical current was overcome. A critical advantage over prior art is that this device was constructed using all diffusion bonds and a minimum number of assembly steps. The fabrication process and the materials used are described in the following steps: (1) Applying a thin refractory metal foil to both sides of lanthanum telluride. To fabricate the n-type leg of the advanced thermoelectric couple, the pre-synthesized lanthanum telluride coupon was diffusion bonded to the metal foil using a thin adhesion layer. (2) Repeating a similar process for the 14-1-11 Zintl p-type leg of the advanced thermoelectric couple. (3) Bonding thick CTE-matched metal plates on the metallized lanthanum telluride and Yb14MnSb11 to form the hot and cold sides of the thermoelectric couple. The calculated conversion efficiency of such an advanced couple would be about 10.5 percent, about 35 percent better than heritage radioisotope thermoelectric technology that relies on Si-Ge alloys. In addition, unlike Si-Ge alloys, these materials can be combined with many other thermoelectric materials optimized for operation at lower temperatures to achieve conversion efficiency in excess of 15 percent (a factor of 2 increase over heritage technology).

Ravi, Vilupanur A.

Thermoelectric properties of non-stoichiometric lanthanum sulfides

The lanthanum sulfides are promising candidate materials for high-efficiency thermoelectric applications at temperatures up to 1300 C. The non-stoichiometric lanthanum sulfides (LaS(x), where x is in the range 1.33-1.50) appear to possess the most favorable thermoelectric properties. The Seebeck coefficient and resistivity vary significantly with composition, so that an optimum value of alpha sq/rho (where alpha is the Seebeck coefficient and rho is the resistivity) can be chosen. The thermal conductivity remains approximately constant with stoichiometry, so a material with an optimum value of alpha sq/rho should possess the optimum figure-of-merit. Data for the Seebeck coefficient and electrical resistivity of non-stoichiometric lanthanum sulfides will be pressed, together with structural properties of these materials.

Shapiro, E.

Work function reduction in lanthanum hexaboride hollow cathodes operated in gas discharges

Thermal characterization of lanthanum hexaboride (LaB6) hollow cathodes has revealed lower than expected electron emitter temperatures when the cathode reaches steady state. This phenomenon is observed at discharge currents ranging from 5 to 35 A and xenon mass ow rates of 5 to 25 sccm in cathodes with three di erent ori ce diameters. Thus, the accepted value of the work function for polycrystalline LaB6, 2.66 eV, does not describe well the emission characteristics of LaB6 hollow cathodes operating with internal gas discharges at steady state. The measured temperatures and a model of the hollow cathode emitter and xenon discharge were used to estimate the value of the work function in these experiments, yielding a value ranging from 2.1 - 2.44 eV. Measurements of the work function as a function of depth on a hollow cathode emitter using X-ray photoelectron spectroscopy and ion beam milling indicate that the work function in a thin layer near the emitting surface is lower than in the bulk material. We postulate that a lanthanum-rich emitting surface with a lower work function develops as a result of lanthanum recycling in the internal plasma.

Lopez Ortega, Alejandro

High-efficiency, low-temperature cesium diodes with lanthanum-hexaboride electrodes

Lanthanum hexaboride electrodes in 1700 K cesium diodes may triple power outputs compared with those demonstrated for nuclear thermionic space applications. Still greater relative gains seem possible for emitters below 1700 K. Further improvements in cesium diode performance should result from the lower collector temperatures allowed for earth and low power space duties. Decreased temperatures will lessen thermal transport losses that attend thermionic conversion mechanisms. Such advantages will add to those from collector Carnot and electrode effects. If plasma ignition difficulties impede diode temperature reductions, recycling small fractions of the output power could provide ionization. So high efficiency, low temperature cesium diodes with lanthanum hexaboride electrodes appear feasible.

Morris, J. F.

High-efficiency, low-temperature cesium diodes with lanthanum-hexaboride electrodes

Lanthanum-hexaboride electrodes in 1700 K cesium diodes may triple power outputs compared with those demonstrated for nuclear thermionic space applications. Still greater relative gains seem possible for emitters below 1700 K. Further improvements in cesium-diode performance should result from the lower collector temperatures allowed for earth and low-power-space duties. Decreased temperatures will lessen thermal-transport losses that attend thermionic-conversion mechanisms. Such advantages will add to those from collector-Carnot and electrode effects. If plasma ignition difficulties impede diode temperature reductions, recycling small fractions of the output power could provide ionization. So high-efficiency, low-temperature cesium diodes with lanthanum-hexaboride electrodes appear feasible.

Morris, J. F.

Diminiode thermionic energy conversion with lanthanum-hexaboride electrodes

Thermionic conversion data obtained from a variable gap cesium diminiode with a hot pressed, sintered lanthanum hexaboride emitter and an arc melted lanthanum hexaboride collector are presented. Performance curves cover a range of temperatures: emitter 1500 to 1700 K, collector 750 to 1000 K, and cesium reservoir 370 to 510 K. Calculated values of emitter and collector work functions and barrier index are also given.

Kroeger, E. W.

Diminiode thermionic energy conversion with lanthanum-hexaboride electrodes

This paper presents thermionic-conversion data obtained from a variable-gap cesium diminiode with a hot-pressed, sintered lanthanum-hexaboride emitter and an arc-melted lanthanum-hexaboride collector. Performance curves cover a range of temperatures: emitter 1500 to 1700 K, collector 750 to 1000 K, and cesium reservoir 370 to 510 K. Calculated values of emitter and collector work functions and barrier index are also given.

Kroeger, E. W.

Metallic behavior of lanthanum disilicide

Polycrystalline thin films of LaSi2 were prepared by reaction of sputter-deposited lanthanum layers with silicon wafers. Samples of the low-temperature tetragonal and the high-temperature orthorhombic phases were separately obtained. The room-temperature intrinsic resistivities were 24 and 57 microohm cm for the low- and high-temperature structures, respectively. Although lanthanum disilicide had been previously reported to be a semiconductor, classical metallic behavior was found for both phases.

Long, Robert G.

Dynamic Nuclear Polarization in Samarium Doped Lanthanum Magnesium Nitrate

The dynamic nuclear polarization of hydrogen nuclei by the solid effect in single crystals of samarium doped lanthanum magnesium nitrate (Sm:LMN) was studied theoretically and experimentally. The equations of evolution governing the dynamic nuclear polarization by the solid effect were derived in detail using the spin temperature theory and the complete expression for the steady state enhancement of the nuclear polarization was calculated. Experimental enhancements of the proton polarization were obtained for eight crystals at 9.2 GHz and liquid helium temperatures. The samarium concentration ranged from 0.1 percent to 1.1 percent as determined by X-ray fluorescence. A peak enhancement of 181 was measured for a 1.1 percent Sm:LMN crystal at 3.0 K. The maximum enhancements extrapolated with the theory using the experimental data for peak enhancement versus microwave power and correcting for leakage, agree with the ideal enhancement (240 in this experiment) within experimental error for three of the crystals.

Byvik, C. E.

Spacecraft charging control by thermal, field emission with lanthanum-hexaboride emitters

Thermal, field emitters of lanthanum (or perhaps cerium) hexaboride (LaB6) with temperature variability up to about 1500K are suggested for spacecraft charging control. Such emitters operate at much lower voltages with considerably more control and add plasma-diagnostic versatility. These gains should outweigh the additional complexity of providing heat for the LaB6 thermal, field emitter.

Morris, J. F.

Work function measurement of lanthanum-boron compounds

The relationship between emission properties and sample composition is studied for lanthanum-boron compounds. Specifically, the La-B system is considered between 1400 and 2100 K and between LaB(4.24) and LaB(29.2) to determine the phase relationship, chemical activity of the compounds, vapor composition, and vaporization rate. The results indicate that: (1) a blue-colored phase near LaB(9) exists between a purple-colored LaB(6) and elemental boron, (2) vaporization is sufficiently more rapid than diffusion so that great compositional differences exist between the surface and the interior, (3) an activation energy lowers the boron vaporization rate from LaB(6), and (4) a steady-state surface composition between LaB(6.04) and LaB(6.07) exists for freely vaporizing materials as a function of interior composition, purity, and temperature. It is noted that the ultimate life of a thermionic diode is governed by electrode vaporization rate whereas efficiency is governed by the electrode work function.

Jacobson, D. L.