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NASA NTRS1983

High-density Schottky barrier IRCCD sensors for remote sensing applications

It is pointed out that the ambitious goals envisaged for the next generation of space-borne sensors challenge the state-of-the-art in solid-state imaging technology. Studies are being conducted with the aim to provide focal plane array technology suitable for use in future Multispectral Linear Array (MLA) earth resource instruments. An important new technology for IR-image sensors involves the use of monolithic Schottky barrier infrared charge-coupled device arrays. This technology is suitable for earth sensing applications in which moderate quantum efficiency and intermediate operating temperatures are required. This IR sensor can be fabricated by using standard integrated circuit (IC) processing techniques, and it is possible to employ commercial IC grade silicon. For this reason, it is feasible to construct Schottky barrier area and line arrays with large numbers of elements and high-density designs. A Pd2Si Schottky barrier sensor for multispectral imaging in the 1 to 3.5 micron band is under development.

Elabd, H.↗

NASA NTRS1995

Fabrication of large-area CCD detectors on high-purity, float-zone silicon

In this report on the fabrication of a 1024 x 1024 charge coupled device (CCD) imager to be used as a soft x-ray sensor onboard the Advanced X-ray Astronomical Facility (AXAF), the following conclusions were found: the dislocations that limited the performance of the high resistivity imager were characterized; the sources of stress were identified and the dislocations found were eliminated; and a charge transfer inefficiency (CTI) of 10(exp -6) and read noise as low as 1.3/e was demonstrated. This sensor must have low noise and a low CTI and must be radiation hardened to withstand any radiation damage from a space environment.

Gregory, J. A.↗

NASA NTRS1983

Stress studies in EFG

Experimental work in support of stress studies in high speed silicon sheet growth has been emphasized in this quarter. Creep experiments utilizing four-point bending have been made in the temperature range from 1000 C to 1360 C in CZ silicon as well as on EFG ribbon. A method to measure residual stress over large areas using laser interferometry to map strain distributions under load is under development. A fiber optics sensor to measure ribbon temperature profiles has been constructed and is being tested in a ribbon growth furnace environment. Stress and temperature field modeling work has been directed toward improving various aspects of the finite element computing schemes. Difficulties in computing stress distributions with a very high creep intensity and with non-zero interface stress have been encountered and additional development of the numerical schemes to cope with these problems is required. Temperature field modeling has been extended to include the study of heat transfer effects in the die and meniscus regions.

Source record↗

NASA NTRS1989

Advantages of an indirect semiconductor quantum well system for infrared detection

The infrared intersubband absorption process in quantum well systems with anisotropic bulk effective masses, which usually occurs in indirect semiconductors was analyzed. It is found that the anisotropic effective mass can be utilized to provide allowed intersubband transitions at normal incidence to the quantum well growth direction. This transition is known to be forbidden for cases of isotropic effective mass. This property can be exploited for infrared sensor application of quantum well structures by allowing direct illumination of large surface areas without using special waveguide structures. The 10-micron intersubband absorption in quantum wells made of the silicon-based system Si/Si(1-x)Ge(x) was calculated. It is found that it is readily possible to achieve an absorption constant of the order of 10,000/cm in these Si quantum wells with current doping technology.

Yang, Chan-Lon↗

NASA NTRS1998

Studies of Avalanche Photodiodes (APDS) as Readout Devices for Scintillating Fibers for High Energy Gamma-Ray Astronomy Telescopes

New gamma ray and charged particle telescope designs based on scintillating fiber arrays could provide low cost, high resolution, lightweight, very large area and multi radiation length instrumentation for planned NASA space exploration. The scintillating fibers low visible light output requires readout sensors with single photon detection sensitivity and low noise. The sensitivity of silicon Avalanche Photodiodes (APDS) matches well the spectral output of the scintillating fibers. Moreover, APDs have demonstrated single photon capability. The global aim of our work is to make available to NASA a novel optical detector concept to be used as scintillating fiber readouts and meeting the requirements of the new generations of space-borne gamma ray telescopes. We proposed to evaluate the feasibility of using RMD's small area APDs ((mu)APD) as scintillating fiber readouts and to study possible alternative (mu)APD array configurations for space borne readout scintillating fiber systems, requiring several hundred thousand to one million channels. The evaluation has been conducted in accordance with the task description and technical specifications detailed in the NASA solicitation "Studies of Avalanche Photodiodes (APD as readout devices for scintillating fibers for High Energy Gamma-Ray Astronomy Telescopes" (#8-W-7-ES-13672NAIS) posted on October 23, 1997. The feasibility study we propose builds on recent developments of silicon APD arrays and light concentrators advances at RMD, Inc. and on more than 5 years of expertise in scintillating fiber detectors. In a previous program we carried out the initial research to develop a high resolution, small pixel, solid-state, silicon APD array which exhibited very high sensitivity in the UV-VIS spectrum. This (mu)APD array is operated in Geiger mode and results in high gain (greater than 10(exp 8)), extremely low noise, single photon detection capability, low quiescent power (less than 10 (mu)W/pixel for 30 micrometers sensitive area diameter) and output in the 1-5 volt range. If successful, this feasibility study will make possible the development of a scintillating fiber detector with unsurpassed sensitivity, extremely low power usage, a crucial factor of merit for space based sensors and telescopes.

Vasile, Stefan↗

NASA NTRSDate not supplied

AstroPix: ATLAS-Inspired Silicon Pixels for Future Space-Based Gamma-ray Telescopes

Space-based gamma-ray telescopes such as the Fermi Large Area Telescope have used single sided silicon strip detectors to measure the position of incident gamma-rays with high resolution. At lower energies, two dimensional position information within a single detector is required. This talk investigates the use of monolithic CMOS active pixel silicon sensors –AstroPix – as a novel technology for use in future gamma-ray telescopes. Based upon detectors designed for use in the ATLAS detector at the LHC, AstroPix has the potential to maintain the high energy and angular resolution required of a medium-energy gamma-ray telescope while reducing noise with the dual detection and readout capabilities of a CMOS chip. The status of AstroPix development and testing, as well as outlook for application in future telescopes such as the proposed medium-energy gamma-ray telescope AMEGO-X, will be presented.

Amanda L. Steinhebel↗

NASA NTRS1993

Chemical Vapor Deposition Of Silicon Carbide

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

Powell, J. Anthony↗

NASA NTRS1998

Carbon Nanotube Based Nano-Electro-Mechanical Systems (NEMS)

Carbon nanotubes (CNT) enable nanoelectromechanical systems (NEMS) because of their inherent nanostructure, intrinsic electric conductivity and mechanical resilience. The collaborative work between Stanford (experiment) and NASA Ames (theory and simulation) has made progress in two types of CNT based NEMS for nanoelectronics and sensor applications. The CNT tipped scanning probe microscopy (SPM) is a NEMS in which CNT tips are used for nanoscale probing, imaging and manipulating. It showed great improvement in probing surfaces and biological systems over conventional tips. We have recently applied it to write (lithography) and read (image) uniform SiO2 lines on large Si surface area at speed up to 0.5 mm per s. Preliminary work using approximately 10 nm multiwall nanotube tips produced approximately 10 nm structures and showed that the CNT tips didn't wear down when crashed as conventional tips often do. This presents a solution to the long standing tip-wear problem in SPM nanolithography. We have also explored potential of CNT tips in imaging DNA in water. Preliminary experiment using 10 nm CNT tips reached 5 nm resolution. The 1 nm nanolithography and 1 nm DNA imaging can be expected by using approximately 1 nm CNT tips. In contrast to CNT tipped SPM, we also fabricated CNT devices on silicon wafer in which CNTs connect patterned metallic lines on SiO2/Si by a simple chemical vapor deposition process. Using conventional lithography for silicon wafer, we have been able to obtain CNT based transistors and sensors. Investigations of the CNT NEMS as physical, biological and chemical sensors are in progress and will be discussed.

Han, Jie↗

NASA NTRS1979

LSA Large Area Silicon Sheet Task Continuous Liquid Feed Czochralski Growth

A process for the continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells was studied. Continuous growth is the growth of 100 Kg of single silicon crystals, 10 cm in diameter, from one container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a melt-down system and a liquid transfer mechanism, with associated automatic feedback controls was developed. Elements of the transfer system were further developed and tested during actual transfer runs. Considerable simplification of the heating element of the transfer tube was achieved. Accuracy and reliability of the temperature sensor, which is part of the power input control system for the transfer tube, was improved. Electrical and thermal effectiveness were increased while assembly of the transfer tube system was further simplified.

Fiegl, G.↗

NASA NTRS1979

Charge injection device as a candidate sensor for stellar tracking

Charge transfer devices (CTDs) are superior to the image dissector as stellar tracking sensors, considering their low voltage requirements, insensitivity to magnetic fields, good linearity, and low weight and power. An analysis of one type of CTD, called the charge injection device (CID), revealed an X-Y addressing capability which provides exceptional flexibility in array readout and results in enhanced S/N capability, a surface channel device which produces a larger dynamic range of operation, and exceptional and unique tolerance to optical overloads. A 128 row by 128 column CID array processed on silicon was evaluated in a cooled breadboard camera, and measured results indicate projected performance parameters of a large area CID array as follows: 20 micron square sensing site, noise not greater than 25 carriers per pixel, quantum yield of approximately 40% from 0.4 to 1.0 micron, and cooling requirements on the order of 0 degrees C.

Jones, C. S., Jr.↗

NASA NTRS2005

Nanostructure Engineered Chemical Sensors for Hazardous Gas and Vapor Detection

A nanosensor technology has been developed using nanostructures, such as single walled carbon nanotubes (SWNTs) and metal oxides nanowires or nanobelts, on a pair of interdigitated electrodes (IDE) processed with a silicon based microfabrication and micromachining technique. The IDE fingers were fabricated using thin film metallization techniques. Both in-situ growth of nanostructure materials and casting of the nanostructure dispersions were used to make chemical sensing devices. These sensors have been exposed to hazardous gases and vapors, such as acetone, benzene, chlorine, and ammonia in the concentration range of ppm to ppb at room temperature. The electronic molecular sensing in our sensor platform can be understood by electron modulation between the nanostructure engineered device and gas molecules. As a result of the electron modulation, the conductance of nanodevice will change. Due to the large surface area, low surface energy barrier and high thermal and mechanical stability, nanostructured chemical sensors potentially can offer higher sensitivity, lower power consumption and better robustness than the state-of-the-art systems, which make them more attractive for defense and space applications. Combined with MEMS technology, light weight and compact size sensors can be made in wafer scale with low cost.

Li, Jing↗

NASA NTRS2009

Carbon Nanotube Based Chemical Sensors for Space and Terrestrial Applications

A nanosensor technology has been developed using nanostructures, such as single walled carbon nanotubes (SWNTs), on a pair of interdigitated electrodes (IDE) processed with a silicon-based microfabrication and micromachining technique. The IDE fingers were fabricated using photolithography and thin film metallization techniques. Both in-situ growth of nanostructure materials and casting of the nanostructure dispersions were used to make chemical sensing devices. These sensors have been exposed to nitrogen dioxide, acetone, benzene, nitrotoluene, chlorine, and ammonia in the concentration range of ppm to ppb at room temperature. The electronic molecular sensing of carbon nanotubes in our sensor platform can be understood by intra- and inter-tube electron modulation in terms of charge transfer mechanisms. As a result of the charge transfer, the conductance of p-type or hole-richer SWNTs in air will change. Due to the large surface area, low surface energy barrier and high thermal and mechanical stability, nanostructured chemical sensors potentially can offer higher sensitivity, lower power consumption and better robustness than the state-of-the-art systems, which make them more attractive for defense and space applications. Combined with MEMS technology, light weight and compact size sensors can be made in wafer scale with low cost. Additionally, a wireless capability of such a sensor chip can be used for networked mobile and fixed-site detection and warning systems for military bases, facilities and battlefield areas.

Li, Jing↗

NASA NTRS2007

Design and Fabrication Highlights Enabling a 2 mm, 128 Element Bolometer Array for GISMO

The Backshort-Under-Grid (BUG) superconducting bolometer array architecture is intended to be highly versatile, operating in a large range of wavelengths and background conditions. We have undertaken a three-year program to develop key technologies and processes required to build kilopixel arrays. To validate the basic array design and to demonstrate its applicability for future kilopixel arrays, we have chosen to demonstrate a 128 element bolometer array optimized for 2 mm wavelength using a newly built Goddard instrument, GISMO (Goddard /RAM Superconducting 2-millimeter Observer). The arrays are fabricated using batch wafer processing developed and optimized for high pixel yield, low noise, and high uniformity. The molybdenum-gold superconducting transition edge sensors are fabricated using batch sputter deposition and are patterned using dry etch techniques developed at Goddard. With a detector pitch of 2 mm 8x16 array for GISMO occupies nearly one half of the processing area of a 100 mm silicon-on-insulator starting wafer. Two such arrays are produced from a single wafer along with witness samples for process characterization. To provide thermal isolation for the detector elements, at the end of the process over 90% of the silicon must be removed using deep reactive ion etching techniques. The electrical connections for each bolometer element are patterned on the top edge of the square grid supporting the array. The design considerations unique to GISMO, key fabrication challenges, and laboratory experimental results will be presented.

Allen, Christine↗

NASA NTRS2000

Progress in the Development of Mo-Au Transition-Edge Sensors for X-Ray Spectroscopy

X-ray microcalorimeters using transition-edge sensors (TES) show great promise for use in astronomical x-ray spectroscopy. We have obtained very high energy resolution (2.8 electronvolts at 1.5 kiloelectronvolts and 3.7 electronvolts at 3.3 kiloelectronvolts) in a large, isolated TES pixel using a Mo/Au proximity-effect bilayer on a silicon nitride membrane. We will discuss the performance and our characterization of that device. In order to be truly suitable for use behind an x-ray telescope, however, such devices need to be arrayed with a pixel size and focal-plane coverage commensurate with the telescope focal length and spatial resolution. Since this requires fitting the TES and its thermal link, a critical component of each calorimeter pixel, into a far more compact geometry than has previously been investigated, we must study the fundamental scaling laws in pixel optimization. We have designed a photolithography mask that will allow us to probe the range in thermal conductance that can be obtained by perforating the nitride membrane in a narrow perimeter around the sensor. This mask will also show the effects of reducing the TES area. Though we have not yet tested devices of the compact designs, we will present our progress in several of the key processing steps and discuss the parameter space of our intended investigations.

of Magnetic Calorimeters for Applications in X-ray↗

NASA NTRS1998

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗

NASA NTRS2006

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗

NASA NTRS1999

Space Adaptation of Active Mirror Segment Concepts

This report summarizes the results of a three year effort by Blue Line Engineering Co. to advance the state of segmented mirror systems in several separate but related areas. The initial set of tasks were designed to address the issues of system level architecture, digital processing system, cluster level support structures, and advanced mirror fabrication concepts. Later in the project new tasks were added to provide support to the existing segmented mirror testbed at Marshall Space Flight Center (MSFC) in the form of upgrades to the 36 subaperture wavefront sensor. Still later, tasks were added to build and install a new system processor based on the results of the new system architecture. The project was successful in achieving a number of important results. These include the following most notable accomplishments: 1) The creation of a new modular digital processing system that is extremely capable and may be applied to a wide range of segmented mirror systems as well as many classes of Multiple Input Multiple Output (MIMO) control systems such as active structures or industrial automation. 2) A new graphical user interface was created for operation of segmented mirror systems. 3) The development of a high bit rate serial data loop that permits bi-directional flow of data to and from as many as 39 segments daisy-chained to form a single cluster of segments. 4) Upgrade of the 36 subaperture Hartmann type Wave Front Sensor (WFS) of the Phased Array Mirror, Extendible Large Aperture (PAMELA) testbed at MSFC resulting in a 40 to 5OX improvement in SNR which in turn enabled NASA personnel to achieve many significant strides in improved closed-loop system operation in 1998. 5) A new system level processor was built and delivered to MSFC for use with the PAMELA testbed. This new system featured a new graphical user interface to replace the obsolete and non-supported menu system originally delivered with the PAMELA system. The hardware featured Blue Line's new stackable processing system which included fiber optic data links, a WFS digital interface, and a very compact and reliable electronics package. The project also resulted in substantial advances in the evolution of concepts for integrated structures to be used to support clusters of segments while also serving as the means to distribute power, timing, and data communications resources. A prototype cluster base was built and delivered that would support a small array of 7 cm mirror segments. Another conceptual design effort led to substantial progress in the area of laminated silicon mirror segments. While finished mirrors were never successfully produced in this exploratory effort, the basic feasibility of the concept was established through a significant amount of experimental development in microelectronics processing laboratories at the University of Colorado in Colorado Springs. Ultimately lightweighted aluminum mirrors with replicated front surfaces were produced and delivered as part of a separate contract to develop integrated segmented mirror assemblies. Overall the project was very successful in advancing segmented mirror system architectures on several fronts. In fact, the results of this work have already served as the basic foundation for the system architectures of several projects proposed by Blue Line for different missions and customers. These include the NMSD and AMSD procurements for NASA's Next Generation Space Telescope, the HET figure maintenance system, and the 1 meter FAST telescope project.

Ames, Gregory H.↗

NASA NTRS2014

Venus Landsailer Zephyr

Imagine sailing across the hot plains of Venus! A design for a craft to do just this was completed by the COncurrent Multidisciplinary Preliminary Assessment of Space Systems (COMPASS) Team for the NASA Innovative Advanced Concepts (NIAC) project. The robotic craft could explore over 30 kilometers of the surface of Venus, driven by the power of the wind. The Zephyr Venus Landsailer is a science mission concept for exploring the surface of Venus with a mobility and science capability roughly comparable to the Mars Exploration Rovers (MER) mission, but using the winds of the thick atmosphere of Venus for propulsion. It would explore the plains of Venus in the year 2025, near the Venera 10 landing site, where wind velocities in the range of 80 to 120 centimeters per second (cm/s) were measured by earlier Soviet landing missions. These winds are harnessed by a large wing/sail which would also carry the solar cells to generate power. At around 250 kilograms (kg), Zephyr would carry an 8 meter tall airfoil sail (12 square meters area), 25 kg of science equipment (mineralogy, grinder, and weather instruments) and return 2 gigabytes of science over a 30 day mission. Due to the extreme temperatures (450 degrees Centigrade) and pressures (90 bar) on Venus, Zephyr would have only basic control systems (based on high temperature silicon carbide (SiC)electronics) and actuators. Control would come from an orbiter which is in turn controlled from Earth. Due to the time delay from the Earth a robust control system would need to exist on the orbiter to keep Zephyr on course. Data return and control would be made using a 250 megahertz link with the orbiter with a maximum data rate of 2 kilobits per second. At the minimal wind speed required for mobility of 35 cm/s, the vehicle move at a slow but steady 4 cm/s by positioning the airfoil and use of one wheel that is steered for pointing control. Navigation commands from the orbiter will be based upon navigation cameras, simple accelerometers and stability sensors; Zephyr's stability is robust, using a wide wheel base along with controls to "feather" or "luff" the airfoil and apply brakes to stop the vehicle in the case of unexpected conditions. This would be the science gathering configuration. The vehicle itself would need to be made from titanium (Ti) as the structural material, with a corrosion-barrier overcoating due to extreme temperatures on the surface.

Wind Sailing↗