Search NASA⌕ Search

SEARCH · Search NASA

Results for “laser surface remelting”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

Pulsatile instability in rapid directional solidification: Strongly-nonlinear analysis

In models of rapid directional solidification, non-equilibrium interfacial conditions are employed. As a result, there is an oscillatory mode of instability, as well as the steady cellular mode, found in the equilibrium model of Mullins and Sekerka. When the temperature field is decoupled from the problem, the preferred wave number for the oscillatory mode is zero, and the interface pulsates in time while remaining spatially uniform. Results from multiple scale analyses in the two limiting cases of the parameters are reported. In these limits, it is found that the instability is a bifurcation to relaxation oscillations; these nonlinear oscillations may be related to the observed microstructure that results from rapid solidification processes such as laser surface remelting.

Braun, Richard J.↗

Excimer laser annealing: A gold process for CZ silicon junction formation

A cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.

Wong, David C.↗