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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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7 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Broadband differential absorption sensor for detecting gaseous species

A remote sensor system comprising a laser transmitter that emits a pulse of broadband laser illumination comprising a plurality of wavelengths and a receiver configured to detect laser illumination backscatter. The sensor system further includes a computing system configured to determine a plurality of species number densities along a travel path of the laser illumination. Determining the plurality of species number densities includes determining a first number density of a first species based on a first set of optical transmission values from the backscatter data for a first subset of wavelengths of the plurality of wavelengths and a first attenuation cross-section of the first species. Additional species are determined based on additional sets of optical transmission values from the backscatter data for additional subsets of wavelengths of the plurality of wavelengths and additional cross-sections of additional species.

Smith, Mark W.↗
DOE OSTI2025

High-Spectral Resolution Lidar (HSRL) Instrument Handbook

High-spectral-resolution lidar (HSRL) systems provide vertical profiles of optical depth, backscatter cross-section, depolarization, and backscatter phase function. All HSRL measurements are calibrated by reference to molecular scattering, which is measured at each point in the lidar profile. Like the Raman lidar (RL), but unlike simple backscatter lidars such as the micropulse lidar (MPL), this enables the HSRL to measure backscatter cross-sections and optical depths without prior assumptions about the scattering properties of the atmosphere. The depolarization observations allow robust discrimination between ice and water clouds. Rigorous error estimates can be computed for all measurements. A very narrow angular field of view reduces multiple scattering contributions. The small field of view, coupled with a narrow optical bandwidth, nearly eliminates noise due to scattered sunlight. The laser transmitter is a diode-pumped, frequency-doubled Nd:YAG laser. Narrow-band, single-frequency operation is provided by injection seeding with a single-frequency, cw-diode-pumped diode laser. The main laser cavity is maintained in resonance with the seed laser by adjusting the cavity length to minimize the time between the Q-switch trigger and the emission of the laser pulse. The emission wavelength is tuned via temperature control of the seed laser crystal and is locked to line #1109 of the iodine absorption spectra. Locking is accomplished by minimizing the transmission through a 2-cm-long iodine absorption cell. Use of a high-repetition-rate laser and expansion of the transmitted beam through a 400-mm telescope reduces the transmitted energy density to eye-safe levels. It is possible to look directly into the output beam without hazard. The receiver and transmitter use the same afocal telescope, simplifying the maintenance of stable alignment of the transmitter and receiver although the angular FOV is only 100 μrad. The small FOV and the 4-kHz repetition rate also limit the near-field signal strength, making it possible to record continuous profiles that start at an altitude of ~100 m and extend to 30 km using photon counting detectors. The small FOV also suppresses multiple scattering contributions.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2025

Dual-polarization O-band silicon photonics transmitter with an integrated tunable laser, Mach-Zehnder modulators, and SOAs

Presented is an O-band silicon photonics dual-polarization coherent/IMDD modulator integrated with semiconductor optical amplifiers and tunable laser to enhance the short-reach link budget. The laser demonstrated output power >6 dBm and a <250 kHz linewidth over a 14 nm tuning range. Modulators paired with custom 64 Gbaud QPSK drivers exhibited improved analog link sensitivity compared to similar devices without integrated gain sections. They also demonstrated 53 Gbaud dual-polarization PAM4 operation when characterized with a linear driver and MaxLinear 100G/lane DSP board. Both optical links achieved BERs at the KP4-FEC threshold and overall transmitter assembly energy consumption <6.9 pJ/bit without any thermal control when at steady room temperatures.

Liu, Junqian (ORCID:0000000167337650)↗
DOE OSTI2024

Wireless Frequency‐Multiplexed Acoustic Array‐Based Acoustofluidics

Abstract Acoustofluidics has shown great potential in enabling on‐chip technologies for driving liquid flows and manipulating particles and cells for engineering, chemical, and biomedical applications. To introduce on‐demand liquid sample processing and micro/nano‐object manipulation functions to wearable and embeddable electronics, wireless acoustofluidic chips are highly desired. This paper presents wireless acoustofluidic chips to generate acoustic waves carrying sufficient energy and achieve key acoustofluidic functions, including arranging particles and cells, generating fluid streaming, and enriching in‐droplet particles. To enable these functions, the wireless acoustofluidic chips leverage mechanisms, including inductive coupling‐based wireless power transfer (WPT), frequency multiplexing‐based control of multiple acoustic waves, and the resultant acoustic radiation and drag forces. For validation, the wirelessly generated acoustic waves are measured using laser vibrometry when different materials (e.g., bone, tissue, and hand) are inserted between the WPT transmitter and receiver. Moreover, the wireless acoustofluidic chips successfully arrange nanoparticles into different patterns, align cells into parallel pearl chains, generate streaming, and enrich in‐droplet microparticles. This research is anticipated to facilitate the development of embeddable wireless on‐chip flow generators, wearable sensors with liquid sample processing functions, and implantable devices with flow generation and acoustic stimulation abilities for engineering, veterinary, and biomedical applications.

Li, Jiali↗
DOE OSTI2025

Interleaved dual-species arrays of single atoms using a passive optical element and one trapping laser

We demonstrate trapping of individual rubidium (Rb) and cesium (Cs) atoms in an interleaved array of bright tweezers and dark bottle-beam traps, using a microfabricated optical element illuminated by a single-laser beam and a 4f system with spatial filtering. Our approach exploits the opposite-sign dynamic polarizabilities of Rb and Cs, ensuring that each species is exclusively trapped in either bright or dark sites. The passive optical mask creates optimal trap depths for both species using three transmittance levels while minimizing the optical phase difference, implemented using a variable-thickness absorbing layer of amorphous germanium. This trapping architecture achieves atom loading rates close to 50% while reducing system complexity compared to conventional methods using active optoelectronic components and/or multiple-laser wavelengths.

Fang, Chengyu [Univ. of Wisconsin, Madison, WI (Un↗
DOE OSTI2023

α-Quartz Phase Stabilization, Surface Texturing, and Tunable Optical Properties of Nanocrystalline GeO 2 Films Made by Pulsed-Laser Deposition: Implications for Optical and Optoelectronic Applications

Germanium oxide (GeO 2 ) has great potential in multifunctional devices and next-generation power electronics due to its high thermal conductivity and ambipolar doping capability. However, the complexity of synthesizing the desirable polymorph with a controlled phase, surface/interface quality, microstructure, and functional properties is the main barrier to GeO 2 utilization in advanced applications. Here, in this regard, we present a method to realize the hexagonal (h) or a-quartz type GeO 2 with nano-textured surface morphology on sapphire substrates using a hybrid synthesis strategy that comprises pulsed laser deposition (PLD) and post-deposition thermal annealing. We performed a comprehensive study to investigate the effect of annealing temperature, which was varied in a wide range (600-1100 °C), on the crystal structure, phase, surface morphology, chemical stoichiometry, defect states, and optical properties of PLD-grown GeO 2 films. As-deposited GeO 2 films at 500 °C were amorphous. Upon annealing, the GeO 2 films induced an amorphous-to-crystalline phase transformation; GeO 2 films annealed at higher annealing temperatures (≥900 °C) stabilized in the hexagonal phase and demonstrated excellent crystal quality and chemical stability. Thermally activated growth process showed increased average crystallite size, which was varied in the range of 20-130 (±2) nm, while the surface roughness followed a similar trend. The spectral transmittance and band gap also increased with increasing annealing temperature. The resulting h-GeO 2 films, particularly those obtained at annealing temperatures in the 900-1100 °C range, had a higher band gap of 6.2-6.3 eV and displayed excellent optical transmittance in the visible region. Moreover, the absence of extended valence band maxima and reduced optical defect density support the quality improvement upon annealing. When considering phase-pure bulk and nanostructured GeO 2 as a possible candidate for ultra wide band gap semiconductors in cutting-edge technological applications, the results of the current work can be beneficial to realize high structural and optical quality a-quartz structured GeO 2 films.

GeO2↗
DOE OSTI2024

Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors

Abstract Optically addressable light valves (OALVs) are specialized optical components utilized for spatial beam shaping in various laser‐based applications, including optics damage mitigation, and enhanced functionality in diode‐based additive manufacturing requiring high intensities. Current state‐of‐the‐art OALVs employ photoconductors such as Bismuth Silicon Oxide (BSO) or Bismuth Germanium Oxide (BGO), which suffer from limited laser‐induced damage thresholds (LiDT) and inadequate thermal conductivities, thus restricting their use in high peak and average power applications. Aluminum nitride (AlN), an emerging ultra‐wide band gap (UWBG) III–V semiconductor, offers promising optoelectronic properties and superior thermal conductivity (>300 Wm −1 K −1 at 298° K, compared to BSO's 3.29 Wm −1 K −1 ). In this study, the first AlN‐based OALVs are designed, fabricated, and experimentally demonstrated using commercially available single‐crystal AlN substrates. These AlN‐based OALVs have shown clear superiority over BSO and BGO‐based devices. Design considerations for OALVs incorporating UWBG photoconductors are discussed, and the photoresponsivity from defect‐mediated sub‐bandgap absorption in AlN crystals is verified as sufficient for OALVs operating under high light fluences. The optimum driving voltage for the AlN‐based OALV is determined to be ≈ 45 V pp at 100 Hz, achieving a transmittance of 91.3%, an extinction ratio (ER) of more than 100, and a 51:1 image contrast.

36 MATERIALS SCIENCE↗