High-Energy Lateral Mapping (HELM) Studies of Inhomogeneity and Failure Mechanisms in NMC622/Li Pouch Cells
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99 GENERAL AND MISCELLANEOUS↗
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Vortex-Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures
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Chemistry↗
Dimethylammonium Addition to Halide Perovskite Precursor Increases Vertical and Lateral Heterogeneit
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Jariwala, Sarthak↗
Modeling the role of lateral surface flow in low‐relief polygonal tundra
Abstract Ice‐wedge polygon troughs play an important role in controlling the hydrology of low‐relief polygonal tundra regions. Lateral surface flow is confined to troughs only, but it is often neglected in model projections of permafrost thermal hydrology. Recent field and modeling studies have shown that, after rain events, increases in trough water levels are significantly more than the observed precipitation, highlighting the role of lateral surface flow in the polygonal tundra. Therefore, understanding how trough lateral surface flow can influence polygonal tundra thermal hydrology is important, especially under projected changes in temperatures and rainfall in the Arctic regions. Using an integrated cryohydrology model, this study presents plot‐scale end‐of‐century projections of ice‐wedge polygon water budget components and active layer thickness with and without trough lateral surface flow under the Representative Concentration Pathway 8.5 scenario. Trough lateral surface flow is incorporated through a newly developed empirical model, evaluated against field measurements. The numerical scenario that includes trough lateral surface flow simulates discharge (outflow from a polygon) and recharge (rain‐induced inflow to a polygon trough from upslope areas), while the scenario that does not include trough lateral surface flow ignores recharge. The results show considerable reduction (about 100–150%) in evapotranspiration and discharge in rainy years in the scenarios ignoring trough lateral surface flow, but less effect on soil water storage, in comparison with the scenario with trough lateral surface flow. In addition, the results demonstrate long‐term changes (~10–15 cm increase) in active layer thickness when trough lateral surface flow is modeled. This study highlights the importance of including lateral surface flow processes to better understand the long‐term thermal and hydrological changes in low‐relief polygonal tundra regions under a changing climate.
Jan, Ahmad↗
Integrating a Water Tracer Model Into WRF‐Hydro for Characterizing the Effect of Lateral Flow in Hydrologic Simulations
Abstract Most current land models approximate terrestrial hydrological processes as one‐dimensional vertical flow, neglecting lateral water movement from ridges to valleys. Such lateral flow is fundamental at catchment scales and becomes crucial for finer‐scale land models. To test the effect of incorporating lateral flow toward three‐dimensional representations of hydrological processes in the next generation land models, we integrate a water tracer model into the WRF‐Hydro framework to track water movement from precipitation to discharge and evapotranspiration. This hydrologic‐tracer integrated system allows us to identify the key mechanisms by which lateral flow affects the flow paths and transit times in WRF‐Hydro. By comparing modeling experiments with and without lateral routing in two contrasting catchments, we determine the impacts of lateral flow on the transit times of precipitation event‐water. Results show that with limited hydrologic connectivity, lateral flow extends the transit times by reducing (increasing) event‐water drainage loss (accumulation) in ridges (valleys) and allowing reinfiltration of infiltration‐excess flow, which is missing in most land models. On the contrary with high hydrologic connectivity, lateral flow can effectively accelerate the water release to streams and reduce the transit time. However, the transit times are substantially underestimated by the model compared with isotope‐derived estimates, indicating model limitations in representing flow paths and transit times. This study provides some insights on the fundamental differences in terrestrial hydrology simulated by land models with and without lateral flow representation.
54 ENVIRONMENTAL SCIENCES↗
Numerical and experimental characterization of twin transmission across grain boundaries along the forward and lateral directions
Pervasive deformation twinning and transmission events across grain boundaries (GBs) affect the strength and failure of hexagonal close-packed (HCP) magnesium. A three-dimensional twin can transmit along the twinning shear direction, (forward), and along the direction perpendicular to both the twinning plane normal and the shear direction, (lateral). For the first time, phase-field calculations and electron backscatter diffraction (EBSD)-based statistical analysis are combined to investigate the effect of the twinned grain boundary characteristics on twin transmission (TT) along the forward and lateral directions. This combined analysis reveals that TT propensity decreases with increasing misorientation angle across the GB for both forward and lateral directions. Also, the TT is more favorable along the lateral than along the forward direction. Twin transmission seems harder across GBs with a misorientation axis closer to the twin -direction than the other directions ( and ). Further, the PF calculations reveal that, at the onset of a transmission process, the crystallography tends to be preserved in the case of lateral transmission, whereas, in the forward transmission case, the transmitted twin punches straight through the GBs and its morphology prevails. Additionally, the EBSD analysis finds that pure forward and lateral transmissions do not occur often, yet reveals a preference for lateral propagation consistent with PF simulations. Further, the local twin transmission configurations observed in the actual material do not correspond to pure tilt or twist GBs, which are most commonly considered as model cases.
36 MATERIALS SCIENCE↗
Photonics in Multimaterial Lateral Heterostructures Combining Group IV Chalcogenide van der Waals Semiconductors
Abstract Lateral heterostructures combining two multilayer group IV chalcogenide van der Waals semiconductors have attracted interest for optoelectronics, twistronics, and valleytronics, owing to their structural anisotropy, bulk‐like electronic properties, enhanced optical thickness, and vertical interfaces enabling in‐plane charge manipulation/separation, perpendicular to the trajectory of incident light. Group IV monochalcogenides support propagating photonic waveguide modes, but their interference gives rise to complex light emission patterns throughout the visible/near‐infrared range both in uniform flakes and single‐interface lateral heterostructures. Here, this work demonstrates the judicious integration of pure and alloyed monochalcogenide crystals into multimaterial heterostructures with unique photonic properties, notably the ability to select photonic modes with targeted discrete energies through geometric factors rather than band engineering. SnS‐GeS 1− x Se x ‐GeSe‐GeS 1− x Se x heterostructures with a GeS 1− x Se x active layer sandwiched laterally between GeSe and SnS, semiconductors with similar optical constants but smaller bandgaps, were designed and realized via sequential vapor transport synthesis. Raman spectroscopy, electron microscopy/diffraction, and energy‐dispersive X‐ray spectroscopy confirm a high crystal quality of the laterally stitched components with sharp interfaces. Nanometer‐scale cathodoluminescence spectroscopy provides evidence for a facile transfer of electron–hole pairs across the lateral interfaces and demonstrates the selection of photon emission at discrete energies in the laterally embedded active (GeS 1− x Se x ) part of the heterostructure.
2D layered crystals↗
Lateral Integration of SnS and GeSe van der Waals Semiconductors: Interface Formation, Electronic Structure, and Nanoscale Optoelectronics
The emergence of atomically thin crystals has allowed extending materials integration to lateral heterostructures where different 2D materials are covalently connected in the plane. The concept of lateral heterostructures can be generalized to thicker layered crystals, provided that a suitably faceted seed crystal presents edges to which a compatible second van der Waals material can be attached layer by layer. Here, we examine the possibility of integrating multilayer crystals of the group IV monochalcogenides SnS and GeSe, which have the same crystal structure, small lattice mismatch, and similar bandgaps. In a two-step growth process, lateral epitaxy of GeSe on the sidewalls of multilayer SnS flakes (obtained by vapor transport of a SnS 2 precursor on graphite) yields heterostructures of laterally stitched crystalline GeSe and SnS without any detectable vertical overgrowth of the SnS seeds and with sharp lateral interfaces. Combined cathodoluminescence spectroscopy and ab initio calculations show the effects of small band offsets on carrier transport and radiative recombination near the interface. Further, the results demonstrate the possibility of forming atomically connected lateral interfaces across many van der Waals layers, which is promising for manipulating optoelectronics, photonics, and for managing charge- and thermal transport.
2D layered crystals↗
Lateral Heterostructures of Multilayer GeS and SnS van der Waals Crystals
Engineered heterostructures derive distinct properties from materials integration and interface formation. Two-dimensional crystals have been combined to form vertical stacks and lateral heterostuctures with covalent line interfaces. While thicker vertical stacks have been realized, lateral heterostructures from multilayer van der Waals crystals, which could bring the benefits of high-quality interfaces to bulk-like layered materials, have remained much less explored. In this work, we demonstrate the integration of anisotropic layered Sn and Ge monosulfides into complex heterostructures with seamless lateral interfaces and tunable vertical design using a two-step growth process. The anisotropic lattice mismatch at the lateral interfaces between GeS and SnS is relaxed via dislocations and interfacial alloying. Nanoscale optoelectronic measurements by cathodoluminescence spectroscopy show the characteristic light emission of joined high-quality van der Waals crystals. Spectroscopy across the lateral interface indicates valley-selective luminescence in the bulk SnS component that arises due to anisotropic electron transfer across the interface. The results demonstrate the ability to realize high-quality lateral heterostructures of multilayer van der Waals crystals for diverse applications, e.g., in optoelectronics or valleytronics.
36 MATERIALS SCIENCE↗
Probing the Contribution of Lateral Pathways to Out–of–Plane Charge Transport in Organic Bulk Heterojunctions
The nanoscale interpenetrating electron donor–acceptor network in organic bulk heterojunction (BHJ) solar cells results in efficient charge photogeneration but creates complex 3D pathways for charge transport. At present, little is known about the extent to which out-of-plane charge flow relies on lateral electrical connectivity. In this work, a procedure, based on conductive atomic force microscopy, is introduced to quantify lateral current spreading during out-of-plane charge transport. Using the developed approach, the dependence of lateral spreading on BHJ phase separation, composition, and molecule type (small molecule vs polymer) is studied. In the small-molecule BHJ, 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophen]-5-yl)benzo[c]-[1,2,5]thiadiazole):(6,6)-Phenyl-C 71 -butyric acid methyl ester (p-DTS(FBTTh 2 ) 2 :PC 71 BM), an increase is observed in lateral hole current spreading as the population of donor crystallites, bearing an edge-on molecular orientation, is increased. When integrated into BHJs, the polymer donor poly(3-hexylthiophene-2,5-diyl) (P3HT) leads to greater lateral hole current spreading and more spatially uniform charge transport than the small-molecule donor, owing to in-plane charge transport along the polymer backbone. Finally, through the newly introduced electrical characterization scheme, these experiments bring to light the role of lateral electrical connectivity in assisting charge navigation across BHJs.
14 SOLAR ENERGY↗
Specifics of Thermal Transport in Graphene Composites: Effect of Lateral Dimensions of Graphene Fillers
In this work, we report on the investigation of thermal transport in noncured silicone composites with graphene fillers of different lateral dimensions. Graphene fillers are comprised of few-layer graphene flakes with lateral sizes in the range from 400 to 1200 nm and the number of atomic planes from 1 to ~100. The distribution of the lateral dimensions and thicknesses of graphene fillers has been determined via atomic force microscopy statistics. It was found that in the examined range of the lateral dimensions, the thermal conductivity of the composites increases with increasing size of the graphene fillers. The observed difference in thermal properties can be related to the average gray phonon mean free path in graphene, which has been estimated to be around ~800 nm at room temperature. The thermal contact resistance of composites with graphene fillers of 1200 nm lateral dimensions was also smaller than that of composites with graphene fillers of 400 nm lateral dimensions. The effects of the filler loading fraction and the filler size on the thermal conductivity of the composites were rationalized within the Kanari model. The obtained results are important for the optimization of graphene fillers for applications in thermal interface materials for heat removal from high-power-density electronics.
36 MATERIALS SCIENCE↗
Representing lateral groundwater flow from land to river in Earth system models
Lateral groundwater flow (LGF) is an important hydrologic process in controlling water table dynamics. Due to the relatively coarse spatial resolutions of land surface models, the representation of this process is often overlooked or overly simplified. In this study, we developed a hillslope-based lateral groundwater flow model. Specifically, we first developed a hillslope definition model based on an existing watershed delineation model to represent the subgrid spatial variability in topography. Building upon this hillslope definition, we then developed a physical-based lateral groundwater flow using Darcy’s equation. This model explicitly considers the relationships between the groundwater table along the hillslope and the river water table levels. We coupled this intra-grid model to the land component (E3SM Land Model: ELM) and river component (MOdel for Scale Adaptive River Transport: MOSART) of the Energy Exascale Earth System Model (E3SM). We tested both the hillslope definition model and the lateral groundwater flow model and performed sensitivity experiments using different configurations. Simulations for a single grid cell at 0.5°×0.5° within the Amazon basin show that the definition of hillslope is the key to modeling lateral flow processes and the runoff partition between surface and subsurface can be dramatically changed using the hillslope approach. Although our method provides a pathway to improve the lateral flow process, future improvements are needed to better capture the subgrid structure to account for the spatial variability in hillslopes within the simulated grid of land surface models.
54 ENVIRONMENTAL SCIENCES↗
The importance of freeze–thaw cycles for lateral tracer transport in ice-wedge polygons
Abstract. A significant portion of the Arctic coastal plain is classified as polygonal tundra and plays a vital role in soil carbon cycling. Recent research suggests that lateral transport of dissolved carbon could exceed vertical carbon releases to the atmosphere. However, the details of lateral subsurface flow in polygonal tundra have not been well studied. We incorporated a subsurface transport process into an existing state-of-the-art hydrothermal model. The model captures the physical effects of freeze–thaw cycles on lateral flow in polygonal tundra. The new modeling capability enables non-reactive tracer movement within subsurface. We utilized this new capability to investigate the impact of freeze–thaw cycles on lateral flow in the polygonal tundra. Our study indicates the important role of freeze–thaw cycles and the freeze-up effect in lateral tracer transport, suggesting that dissolved species could be transported from the middle of the polygon to the sides within a couple of thaw seasons. Introducing lateral carbon transport into the climate models could substantially reduce the uncertainty associated with the impact of thawing permafrost.
54 ENVIRONMENTAL SCIENCES↗
Directing Charge Carriers and Ferroelectric Domains at Lateral Interfaces in van der Waals Heterostructures
Emergent phenomena in traditional ferroelectrics are frequently observed at heterointerfaces. Accessing such functionalities in van der Waals ferroelectrics requires the formation of layered heterostructures, either vertically stacked (similar to oxide ferroelectrics) or laterally stitched (without equivalent in 3D-crystals). Here, we investigate lateral heterostructures of the ferroelectric van der Waals semiconductors SnSe and SnS. A two-step process produces ultrathin crystals comprising an SnSe core laterally joined to an SnS edge-band, as confirmed by Raman spectroscopy, transmission electron microscopy (TEM) imaging, and electron diffraction. TEM shows a moiré pattern across the SnSe core due to coverage by an ultrathin SnS layer. The ability of the lateral interface (IF) to direct excited carriers, probed by cathodoluminescence, shows electron transfer over 560 nm diffusion length from the SnS edge-band. Large, thin flakes supporting ferroelectricity allow investigating domains and domain wall interactions in uniform crystals and lateral heterostructures. Polarized optical microscopy of sub-20 nm flakes consistently shows ⟨110⟩ oriented stripe domains with mirror-twin domain walls. Heterostructures adopt two domain configurations, with domains either constrained to the SnSe core or propagating across the entire SnSe–SnS flakes. Furthermore, the combined results demonstrate multifunctional van der Waals heterostructures with high-quality IFs presenting extraordinary opportunities for manipulating carrier flows and ferroelectric domain patterns.
2D ferroelectrics↗
Multilayer Lateral Heterostructures of Van Der Waals Crystals with Sharp, Carrier–Transparent Interfaces
Abstract Research on engineered materials that integrate different 2D crystals has largely focused on two prototypical heterostructures: Vertical van der Waals stacks and lateral heterostructures of covalently stitched monolayers. Extending lateral integration to few layer or even multilayer van der Waals crystals could enable architectures that combine the superior light absorption and photonic properties of thicker crystals with close proximity to interfaces and efficient carrier separation within the layers, potentially benefiting applications such as photovoltaics. Here, the realization of multilayer heterstructures of the van der Waals semiconductors SnS and GeS with lateral interfaces spanning up to several hundred individual layers is demonstrated. Structural and chemical imaging identifies {110} interfaces that are perpendicular to the (001) layer plane and are laterally localized and sharp on a 10 nm scale across the entire thickness. Cathodoluminescence spectroscopy provides evidence for a facile transfer of electron‐hole pairs across the lateral interfaces, indicating covalent stitching with high electronic quality and a low density of recombination centers.
36 MATERIALS SCIENCE↗
Experimental Tests of Lateral Bedload Transport Induced by a Yawed Submerged Vane Array in Open-Channel Flows
This work proposes the use of an array of yawed porous vanes to control the lateral bedload transport by locally steering bedform migration and maximize the amount of sediments redirected toward a potential sediment extraction system or bypass channel. A laboratory experiment was conducted in a quasifield-scale channel with an array of permeable vanes installed on one side, in live-bed conditions under bedload dominant regime, i.e., negligible suspended load. A baseline experiment without vanes was also performed for comparison. The evolution of migrating bedforms of different scales was tracked in space and time using a high-resolution, state-of-the-art laser scanning device. The bedload transport rate in the streamwise direction was first calculated using bedforms’ geometry and migration velocity, and then spatially distributed over the entire monitored area using a new Eulerian-averaged grid-mapping method. This allowed us to introduce a new methodology to estimate the lateral bedload transport using control volume theory and applying mass conservation. Quantitative assessments of lateral bedload transport along the channel yield consistent results, suggesting that the vanes effectively move sediments laterally as intended. Under the investigated setup, the maximum lateral sediment transport rate ranges from 9% to 18% of the whole domain-averaged streamwise transport rate. The developed methodology also allowed to identify the location where sediment capture could be maximized for the given vane spatial distribution.
42 ENGINEERING↗
Optical and electronic functionality arising from controlled defect formation in nanoscale complex oxide lateral epitaxy
Epitaxial crystallization of complex oxides provides the means to create materials with precisely selected composition, strain, and orientation, thereby controlling their functionalities. Extending this control to nanoscale three-dimensional geometries can be accomplished via a three-dimensional analog of oxide solid-phase epitaxy, lateral epitaxial crystallization. The orientation of crystals within laterally crystallized SrTiO 3 systematically changes from the orientation of the SrTiO 3 substrate. This evolution occurs as a function of lateral crystallization distance, with a rate of approximately 50° μm -1 . The mechanism of the rotation is consistent with a steady-state stress of tens of megapascal over a 100–nanometer scale region near the moving amorphous/crystalline interface arising from the amorphous-crystalline density difference. Second harmonic generation and piezoelectric force microscopy reveal that the laterally crystallized SrTiO 3 is noncentrosymmetric and develops a switchable piezoelectric response at room temperature, illustrating the potential to use lateral crystallization to control the functionality of complex oxides.
36 MATERIALS SCIENCE↗