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Results for “lattices in beam optics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Effects of radiation damage on the silicon lattice

Silicon was irradiated with both proton and electron particle beams in order to investigate changes in the structural and optical properties of the lattice as a result of the radiation damage. Lattice expansions occurred when large strain fields (+0.34 percent) developed after 1- and 3-MeV proton bombardment. The strain was a factor of three less after 1-MeV electron irradiation. Average increases of approximately 22 meV in the 3.46-eV interband energy gap and 14 meV in the Lorentz broadening parameter were measured after the electron irradiation.

Dumas, Katherine A.↗
NASA NTRS1989

Optical Johnson noise thermometry

A concept is being explored that an optical analog of the electrical Johnson noise may be used to measure temperature independently of emissivity. The concept is that a laser beam may be modulated on reflection from a hot surface by interaction of the laser photons with the thermally agitated conduction electrons or the lattice phonons, thereby adding noise to the reflected laser beam. If the reflectance noise can be detected and quantified in a background of other noise in the optical and signal processing systems, the reflectance noise may provide a noncontact measurement of the absolute surface temperature and may be independent of the surface's emissivity.

Shepard, R. L.↗
NASA NTRS1993

Anisotropic induced Compton scattering - Constraints on models of active galactic nuclei

A model for nonlinear radiative transfer on a lattice is used to explore observational signatures of anisotropic induced Compton scattering. Ways in which an intense beam of radiation may be altered in passing through a slab of plasma that is optically thin to spontaneous Thomson scattering are explained. A numerical approach to induced Compton scattering which involves solving the equations of nonlinear transfer on a lattice is described. Results of calculations for some simple geometrical configurations (spheres, disks, cylindrical 'jets', etc.) are presented. Some possible applications of these results to the interpretation of actual data on compact radio sources are outlined, and the FIR spectra of AGN are considered.

Coppi, P.↗
NASA NTRS1989

Pulsed Molecular Beams For Growth Of InAs On GaAs

Pauses for annealing reduce number of defects. Deposition process that includes pulsed molecular beams produces high-quality epitaxial layers of indium arsenide on gallium arsenide substrates. Layers made as much as 30 atoms thick without introducing excessive numbers of dislocations, despite 7.4-percent mismatch between InAs and GaAs crystal lattices. Layers offer superior electrical properties in such devices as optically addressed light modulators, infrared sensors, semiconductor lasers, and high-electron-mobility transistors. Technique applicable to other epitaxial systems in which lattices highly mismatched.

Grunthaner, Frank J.↗
NASA NTRS2011

Monolithic, High-Speed Fiber-Optic Switching Array for Lidar

Current fiber switch technologies use mechanical means to redirect light beams, resulting in slow switch time, as well as poor reliability due to moving parts wearing out quickly at high speeds. A non-mechanical ability to switch laser output into one of multiple fibers within a fiber array can provide significant power, weight, and costs savings to an all-fiber system. This invention uses an array of crystals that act as miniature prisms to redirect light as an electric voltage changes the prism s properties. At the heart of the electro-optic fiber-optic switch is an electro- optic crystal patterned with tiny prisms that can deflect the beam from the input fiber into any one of the receiving fibers arranged in a linear array when a voltage is applied across the crystal. Prism boundaries are defined by a net dipole moment in the crystal lattice that has been poled opposite to the surrounding lattice fabricated using patterned, removable microelectrodes. When a voltage is applied across the crystal, the resulting electric field changes the index of refraction within the prism boundaries relative to the surrounding substrate, causing light to deflect slightly according to Snell s Law. There are several materials that can host the necessary monolithic poled pattern (including, but not limited to, SLT, KTP, LiNbO3, and Mg:LiNbO3). Be cause this is a solid-state system without moving parts, it is very fast, and does not wear down easily. This invention is applicable to all fiber networks, as well as industries that use such networks. The unit comes in a compact package, can handle both low and high voltages, and has a high reliability (100,000 hours without maintenance).

Suckow, Will↗
NASA NTRS1979

Structure and electrical activity of planar defects in EFG ribbons

Optical, electron beam induced current (EBIC), and transmission electron microscopy were used to study the structure and electrical activity of planar defects in EFG silicon. What appears to be twin boundaries by both optical microscopy plus etching, and by EBIC are in reality systems of microtwins, some of which are only a few atomic lattice planes thick. The electrical activity of planar defects appears to be correlated with emission of dislocations especially at termination points. Impurity effects may also play a role. Twin boundaries per se appear not to be electrically active.

Ast, D. G.↗
NASA NTRS1990

InAs/Ga(1-x)In(x)Sb superlattices for infrared detector applications

The successful growth of InAs/Ga(1-x)In(x)Sb superlattices and their optical and structural characterization is discussed. Samples were grown by molecular beam epitaxy at fairly low substrate temperatures (less than 400 C). Structural quality was assessed by reflection high energy electron difrraction, transmission electron microscopy, and x ray diffraction. Excellent structures were achieved for growth on thick, strain relaxed GaSb buffer layers on GaAs substrates, despite a residual threading dislocation density of 10(exp 9)cm(exp -2) originating at the GaSb/GaAs interface. Despite a lattice mismatch of 1.7 percent, InAs/Ga(0.75)In(0.25)Sb superlattices are observed to be free of misfit dislocations at the thicknesses examined here, owing to the close lattice match between the superlattice and GaSb, which evenly distributes compressive and tensile stresses between the InAs and Ga(0.75)In(0.25)Sb layers. Photoluminescence and photoconductivity measurements indicate that the energy gaps of the strain-layer superlattices are smaller than those of InAs/GaSb superlattices with the same layer thicknesses, and are in agreement with the theoretical predictions of Smith and Mailhiot. Energy gaps of 80 to 250 meV (15 to 5 microns) have been measured for InAs/Ga(0.75)In(0.25)Sb superlattices with 45 to 25 A/25 A layer thickness. Results demonstrate that far-infrared cutoff wavelengths are compatible with the thin superlattice layers required for strong optical absorption in type-II superlattices.

Miles, Richard H.↗
NASA NTRS1989

Long wavelength semiconductor lasers development for infrared heterodyne applications

PbSnTe single crystals were grown in a new 3 zone furnace. Molecular beam epitaxy (MBE) growth parameters have been established, including beam flux vs. temperature, and growth rates and dopant vs. PbTe flux ratios for the various effusion sources involved. Lattice matching studies were conducted and doping studies were completed. Broad area Pb(1-x)Sn(x)Te double heterostructure lasers were fabricated with active layer compositions up to x equals 0.04 at percent Sn in the active layers. Electrical and optical test data are presented.

Feit, Zeev↗
NASA NTRS1990

InAs/GaAs and InAs doping superlattices

The extension of the optical response of narrow band gap III-V semiconductors into the long wavelength infrared radiation (LWIR) regime for high sensitivity sensor applications is a challenging problem. Recent advances in nipi doped GaAs superlattices, lattice mismatched epitaxy and the heteroepitaxial growth of III-V compound semiconductors on silicon substrates offer a number of opportunities. Researchers describe two different device approaches based on the molecular beam epitaxy (MBE) growth of superlattice materials which are directed to LWIR focal plane array technology. The first of these uses nipi superlattices fabricated in bulk InAs which has been grown on either GaAs or Si substrates. The second is based on the growth of a new pseudomorphic tetragonal phase of InAs on GaAs to create a semimetal/semiconductor superlattice material.

Grunthaner, Frank J.↗
NASA NTRS1992

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical point of their dielectric function toward the InP lattice-matched concentration.

Alterovitz, Samuel A.↗
NASA NTRS1991

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

Alterovitz, S. A.↗
NASA NTRSDate not supplied

Contamination, Transportation or Transmutation in LENR Material Analyses

LENR experiments using various loading and triggering mechanisms rely on a variety of elemental and isotopic assays to determine LENR effects. These assays include optical microscopy, Scanning Electron Microscopy with Energy Dispersive X-Ray Analysis (SEM/EDX), X-Ray Photoelectron Spectroscopy (XPS) and Transmission Electron Microscopy (TEM). All of these methods observe the surface of a material. By dissolving or vaporizing the sample, Inductively Coupled Plasma Optical Element Spectroscopy (ICP-OES) can determine elemental composition (ppb) or with mass spectroscopy, isotopes (ICP/MS). One can use a focused ion beam (FIB) to cut open a sample and observe the “cut” with either SEM/EDX, or Time-of-Flight Secondary Ion Mass Spectroscopy (TOF-SIMS). High Purity Gamma Ray Spectroscopy (HPGe) and alpha/ beta Liquid Scintillator spectroscopy can be used. We’ve employed these assay methods in our NASA GRC research under both the Advanced Energy Conversion and Lattice Confinement Fusion Projects. However, there are limitations associated with each of these methods ranging from handling contamination, instrumental limitations including sensitivity and field of view, and sample preparation.

Low Energy Nuclear Reactions↗
NASA NTRS2006

Growth and Properties of Lattice Matched GaAsSbN Epilayer on GaAs for Solar Cell Applications

The growth and properties of GaAsSbN single quantum wells (SQWs) are investigated in this work. The heterostructures were grown on GaAs substrates in an elemental solid source molecular beam epitaxy (MBE) system assisted with a RF plasma nitrogen source. A systematic study has been carried out to determine the influence of various growth conditions, such as the growth temperature and the source shutter-opening sequence, on the quality of the grown layers and the incorporation of N and Sb. The effects of ex situ and in situ annealing under As overpressure on the optical properties of the layers have also been investigated. Substrate temperature in the range of 450-470 C was found to be optimum. Simultaneous opening of the source shutters was found to yield sharper QW interfaces. N and Sb incorporations were found to depend strongly upon substrate temperatures and source shutter opening sequences. A significant increase in PL intensity with a narrowing of PL line shape and blue shift in emission energy were observed on annealing the GaAsSbN/GaAs SQW, with in situ annealing under As overpressure providing better results, compared to ex situ annealing.

Bharatan, Sudhakar↗
NASA NTRS1971

Measurement of lattice damage caused by ion-implantation doping of semiconductors.

Discussion of two new techniques used to measure the lattice damage produced in GaAs by the implantation of 60 keV cadmium ions. In the first method, optical reflection spectra of the ion-implanted samples were measured in the wavelength range from 2000 to 4600 A. The decrease in reflectivity resulting from ion-implantation was used to determine the relative amount of lattice damage as a function of ion dose. The second technique employed the scanning electron microscope. Patterns very similar in appearance to Kikuchi electron diffraction patterns are obtained when the secondary and/or backscattered electron intensity is displayed as a function of the angle of incidence of the electron beam on a single crystal surface. The results of measurements made by both methods are compared with each other and with data obtained by the method of measuring lattice damage by Rutherford scattering of 1 MeV helium ions.

Hunsperger, R. G.↗
NASA NTRS2005

MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.

Xiao, Ye-Gao↗
NASA NTRS1990

Dielectric function of InGaAs in the visible

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X(0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

Alterovitz, S. A.↗
NASA NTRS1990

Dielectric function of InGaAs in the visible

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X (0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

Alterovitz, S. A.↗
NASA NTRS1998

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths, In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors.The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk II-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology. The electrical and optical properties of semiconductor materials depend on the native point defects, (the deviation from stoichiometry), and the impurity or dopant distribution. To date, the bulk growth of ZnSe substrates has been plagued with problems related to defects such as non-uniform distributions of native defects, impurities and dopants, lattice strain, dislocations, grain boundaries, and second phase inclusions which greatly effect the device performance. In the bulk crystal growth of some technologically important semiconductors, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials.

Su, Ching-Hua↗