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At least 19 records

Pressure Induced Assembly and Coalescence of Lead Chalcogenide Nanocrystals

We report here pressure induced nanocrystal coalescence of ordered lead chalcogenide nanocrystal arrays into one dimensional (1D) and 2D nanostructures. In particular, atomic crystal phase transitions and mesoscale coalescence of PbS and PbSe nanocrystals have been observed and monitored in-situ respectively by wide- and small-angle synchrotron X-ray scattering techniques. At the atomic scale, both nanocrystals underwent reversible structural transformations from cubic to orthorhombic at significantly higher pressures than those for the corresponding bulk materials. At the mesoscale, PbS nanocrystal arrays displayed a superlattice transformation from face-centered cubic to lamellar structures, while no clear mesoscale lattice transformation was observed for PbSe nanocrystal arrays. Intriguingly, transmission electron microscopy (TEM) showed that the applied pressure forced both spherical nanocrystals to coalesce into single crystalline 2D nanosheets and 1D nanorods. Our results confirm that pressure can be used as a straightforward approach to manipulate the interparticle spacing and engineer nanostructures with specific morphologies, and therefore provide insights into the design and functioning of new semiconductor nanocrystal structures under high-pressure conditions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Fundamental Processes and Practical Considerations of Lead Chalcogenide Mesocrystals Formed via Self-Assembly and Directed Attachment of Nanocrystals at a Fluid Interface

Significant advances in the synthesis and processing of colloidal nanocrystals have given scientists and engineers access to a vast library of building blocks with precisely defined size, shape, and composition. These materials have inspired exciting prospects to enable bottom-up fabrication of programmable materials with properties by design. Successfully assembling and connecting the building blocks into superstructures in which constituent nanocrystals can purposefully interact requires robust understanding of and control over a complex interplay of dynamic physicochemical processes. Fluid interfaces provide an advantageous experimental workbench to both probe and control these processes. Despite the ostensible simplicity of fabricating nanocrystal assemblies at a fluid interface, sensitivity to processing conditions and limited reproducibility have underscored the complexity of this process. In situ studies have provided mechanistic insights into the competing dynamics of key subprocesses including solvent spreading and evaporation, superlattice formation, ligand detachment kinetics, and nanocrystal attachment. Understanding how these subprocesses influence the complex choreography of self-assembly, structure transformation, and oriented attachment processes presents a rich research challenge. In this context, we present a detailed methodology for self-assembly and attachment of lead chalcogenide nanocrystals at a liquid–gas interface as a model system for the fabrication of mono- and multilayer cubic connected superlattices. We discuss key experimental parameters such as the characteristics of the building blocks and processing conditions and detailed steps from colloidal nanocrystal injection to superlattice transfer. Furthermore, we hope that this Methods/Protocols paper will provide guidance for future advances in the exciting path toward bringing the prospect of nanocrystal-based programmable materials to fruition.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Modulation of the Electronic and Vibrational Landscape in Lead Organic Chalcogenides

Metal organic chalcogenides (MOCs) are an emerging class of two-dimensional (2D) materials featuring tunable band gaps and strong light-matter interactions with great potential for optical and polaritonic applications. Lead organic chalcogenides (LOCs) stand out among MOCs for sustaining long-lived coherent optical phonons despite their distorted lattices. However, the strong electron–phonon coupling also leads to rapid charge carrier self-trapping, hindering carrier transport. Herein, we demonstrate that charge carrier self-trapping is suppressed in Se- and Te-based LOCs. Specifically, the expansive Se and Te orbitals give rise to more dispersive conduction bands and reduced electron effective masses, thereby mitigating carrier self-trapping. As a result of reduced carrier self-trapping, the Se- and Te-based LOCs exhibit enhanced band-to-band photoluminescence and improved charge transport performance. Furthermore, our results provide a synthetic route to Se- and Te-based LOC single crystals and demonstrate the potential of orbital engineering to tune their electronic and phononic properties.

Chalcogenides↗

GaSb doping facilitates conduction band convergence and improves thermoelectric performance in n-type PbS

P-type lead chalcogenides have superior thermoelectric performance because they exhibit the energy convergence of several valence bands. However, despite the existence of two conduction bands, there has been no report about conduction band (CB) convergence for n-type counterparts because of the large energy difference between them. Therefore, new strategies are required to manipulate the CBs if enhancing the electrical transport performance of n-type lead chalcogenides is to be achieved. PbS is a highly attractive member of the lead chalcogenides because of its high earth-abundance and low cost. Here, we report that the introduction of GaSb can successfully dope the PbS matrix with Ga and Sb atoms occupying the Pb site in its rock salt structure. GaSb doping leads to conduction band convergence and enlarged effective density of state mass for n-type PbS. This effect results in superior power factor and decreased lattice thermal conductivity caused by the soft phonon modes and point defect scattering of phonons. Consequently, a record-high average power factor PF avg of ~20.4 μW cm –1 K –2 and figure of merit ZT avg of ~0.84 in the temperature range of 400 K to 923 K were obtained, higher than any n- and p-type PbS-based thermoelectric materials.

36 MATERIALS SCIENCE↗

Infrared-Responsive Monolithic MOS Circuit

Lead chalcogenide photoresistors integrated with FET amplifiers. Circuit combines voltage divider containing lead chalcogenide photoresistor with FET source follower. Source and drain of FET p-doped regions in underlying n-type silicon wafer. All other structures formed at or deposited above original surface plane of wafer.

Jhabvala, Muzban D.↗

Thermal Evolution of Internal Strain in Doped PbTe

Recent improvements in the efficiency of heat-to-electricity energy conversion in lead chalcogenide thermoelectrics involve reducing the thermal conductivity by incorporating large amounts of internal strain. The extent to which typical lead chalcogenide processing techniques (such as doping, ball milling, and densification) increase internal strain and dislocation density must be quantified to improve materials design. In this study, neutron powder diffraction is leveraged to evaluate the internal strain introduced by ball milling in doped and undoped powders. Doping with Na and/or Eu increases internal strain beyond ball milling alone, with the greatest increase from combining the two dopants. Strain recovery occurs in each powder above 400 K but can be suppressed by co-doping, indicating a strong dopant–dislocation interaction in this system. Therefore, high-temperature processing of PbTe powders should be avoided if high internal strain is desired. Low-temperature densification and/or rapid pressing techniques may be key to maintaining internal strain in the final pressed pellet. The diffraction peak asymmetry and correlated elastic softening measured in pressed PbTe pellets in past studies were not observed in the precursor powders measured here, suggesting that measurements of the Debye temperature on final pressed pellets are required to examine the influence of defect-induced elastic softening on thermal conductivity. This work provides key guidance for defect engineering to maximize internal strain and thermoelectric performance in PbTe thermoelectrics.

36 MATERIALS SCIENCE↗

PbS/CdS Quantum Dot Room-Temperature Single-Emitter Spectroscopy Reaches the Telecom O and S Bands via an Engineered Stability

We synthesized PbS/CdS core/shell quantum dots (QDs) to have functional single-emitter properties for room-temperature, solid-state operation in the telecom O and S bands. Two shell-growth methods–cation exchange and successive ionic layer adsorption and reaction (SILAR)–were employed to prepare QD heterostructures with shells of 2–16 monolayers. PbS/CdS QDs were sufficiently bright and stable to resolve photoluminescence (PL) spectra representing both bands from single nanocrystals using standard detection methods, and for a QD emitting in the O-band a second-order correlation function showed strong photon antibunching, important steps toward demonstrating the utility of lead chalcogenide QDs as single-photon emitters (SPEs). Irrespective of type, few telecom-SPEs exist that are capable of such room-temperature operation. Access to single-QD spectra enabled a direct assessment of spectral line width, which was ~70–90 meV compared to much broader ensemble spectra (~300 meV). We show inhomogeneous broadening results from dispersity in PbS core sizes that increases dramatically with extended cation exchange. Quantum yields (QYs) are negatively impacted at thick shells (>6 monolayers) and, especially, by SILAR-growth conditions. Time-resolved PL measurements revealed that, with SILAR, initially single-exponential PL-decays transition to biexponential, with opening of nonradiative carrier-recombination channels. Radiative decay times are, overall, longer for core/shell QDs compared to PbS cores, which we demonstrate can be partially attributed to some core/shell sizes occupying a quasi-type II electron–hole localization regime. Finally, we demonstrate that shell engineering and the use of lower laser-excitation powers can afford significantly suppressed blinking and photobleaching. However, dependence on shell thickness comes at a cost of less-than-optimal brightness, with implications for both materials and experimental design

36 MATERIALS SCIENCE↗

Stabilization of high-performance rock-salt LiMnSbTe3 thermoelectrics with embedded van der Waals-like gaps

Rock-salt-structured compounds like lead chalcogenides are promising thermoelectrics, as their high symmetry, strong anharmonicity, and favorable phase behavior collectively lead to high performance by enabling large power factors and ultralow thermal conductivity. Here, we report LiMnSbTe 3 , a new rock-salt semiconductor stabilized through targeted chemical design by combining hexagonal MnTe with cubic LiSbTe 2 . Embedded in the highsymmetry matrix, van der Waals-like gaps form due to Sb 2 Te 3 nanoscale segregation, which acts as effective phonon-scattering centers, leading to a low lattice thermal conductivity of 0.37Wm- 1 K -1 at 873 K with alloy scattering from disordered cations. The ordered local structure of Sb2Te 3 -type vdW-like gaps and the cross-gap interaction facilitate the carrier transport. Aided by energyconverged valence bands and a paramagnon drag effect, high Seebeck coefficients and enhanced power factor can be achieved, leading to a high ZT of 1.2 at 873 K. Furthermore, introducing Mn deficiency increases ZT to 1.5, highlighting the potential for higher performance through optimized doping or alloying. A segmented single-leg thermoelectric module achieves an output power density of 0.52 Wcm -2 and an efficiency of 8.7% under ΔT of 478 K, further demonstrating its promising thermoelectric applications.

42 ENGINEERING↗

Ultrafast Symmetry Control in Photoexcited Quantum Dots

Symmetry control is essential for realizing unconventional properties, such as ferroelectricity, nonlinear optical responses, and complex topological order, thus it holds promise for the design of emerging quantum and photonic systems. Nevertheless, fast and reversible control of symmetry in materials remains a challenge, especially for nanoscale systems. Here, reversible symmetry changes are unveiled in colloidal lead chalcogenide quantum dots on picosecond timescales. Using a combination of ultrafast electron diffraction and total X-ray scattering, in conjunction with atomic-scale structural modeling and first-principles calculations, it is revealed that symmetry-broken lead sulfide quantum dots restore to a centrosymmetric phase upon photoexcitation. The symmetry restoration is driven by photoexcited electronic carriers, which suppress lead off-centering for about 100 ps. Furthermore, the change in symmetry is closely correlated with the electronic properties, and the bandgap transiently red-shifts in the symmetry-restored quantum dots. Overall, this study elucidates reversible symmetry changes in colloidal quantum dots, and more broadly defines a new methodology to optically control symmetry in nanoscale systems on ultrafast timescales.

36 MATERIALS SCIENCE↗

Dynamical Bond Formation in KNi 2 Se 2

Emphanisis, or the appearance out of nothing, has been used to describe the phenomena of spontaneous atom off-centering and dipole formation at elevated temperatures in lead chalcogenides. Here, we provide spectroscopic evidence of spontaneous formation of metal-metal bonds above T~50 K in the layered metal KNi 2 Se 2 . These bonds form zig-zag chains that lower the local symmetry from tetragonal to monoclinic. Energy-resolved pair distribution function measurements exclude a pure phonon origin of our observations, and instead imply the existence of extra, slowly fluctuating, Ni-Ni bonds above T=50 K. Density functional theory calculations support this lower symmetry configuration as an instability of tetragonal KNi 2 Se 2 . We thus demonstrate that the phenomena of emphansis is not limited to local electric dipole formation, but can also be driven by the formation of metal-metal bonds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Colloidal Quantum Dot Photovoltaics: Current Progress and Path to Gigawatt Scale Enabled by Smart Manufacturing

Colloidal quantum dots (QDs) have lately been pursued with intense vigor for optoelectronic applications such as photovoltaics (PV), flexible electronics, displays, mid-infrared photodetectors, lasers, and single-photon emitters. These nanometer-sized semiconducting crystals can be suitably mass-produced and size-tuned via cost-effective solution-based synthetic routes to operate in the quantum size confinement regime, endowing them with a wide array of exotic optical and electronic properties. While the first potential market entry could be in displays and in niche applications such as “internet-of-things”, ultimately, the technology has the potential to influence large-scale terrestrial power generation, because it is amenable to high-throughput synthesis from Earth-abundant materials and large-area solution-based coating techniques and can be air-stable. In this Review, we chronicle the recent advances that have propelled QD PV toward commercialization and highlight potential areas for further progress. We present an account of the material compositions being explored as QDs and their various benefits, major chemical passivation and doping strategies that have been developed to allay QD surface traps, and advanced device designs deployed to maximize charge extraction. We also discuss pathways to >20% efficient QD PV and describe recent advances in high-precision and autonomous synthesis of such materials. With recent demonstrations of scalable synthesis of high-quality QDs, smart manufacturing of QDs and QD solids, and fabrication of stable solar cells under ambient conditions, we suggest that the technology is on the road to achieving maturity and technological relevance and that gigawatt per year distributed panel production sites may be within reach.

14 SOLAR ENERGY↗

The Role of Dimer Formation in the Nucleation of Superlattice Transformations and Its Impact on Disorder

The formation of defect-free two-dimensional nanocrystal (NC) superstructures remains a challenge as persistent defects hinder charge delocalization and related device performance. Understanding defect formation is an important step toward developing strategies to mitigate their formation. However, specific mechanisms of defect formation are difficult to determine, as superlattice phase transformations that occur during fabrication are quite complex and there are a variety of factors influencing the disorder in the final structure. Here, we use Molecular Dynamics (MD) and electron microscopy in concert to investigate the nucleation of the epitaxial attachment of lead chalcogenide (PbX, where X = S, Se) NC assemblies. We use an updated implementation of an existing reactive force field in an MD framework to investigate how initial orientational (mis)alignment of the constituent building blocks impacts the final structure of the epitaxially connected superlattice. This Simple Molecular Reactive Force Field (SMRFF) captures both short-range covalent forces and long-range electrostatic forces and allows us to follow orientational and translational changes of NCs during superlattice transformation. Our simulations reveal how robust the oriented attachment is with regard to the initial configuration of the NCs, measuring its sensitivity to both in-plane and out-of-plane misorientation. We show that oriented attachment nucleates through the initial formation of dimers, which corroborate experimentally observed structures. We present high-resolution structural analysis of dimers at early stages of the superlattice transformation and rationalize their contribution to the formation of defects in the final superlattice. Collectively, the simulations and experiments presented in this paper provide insights into the nucleation of NC oriented attachment, the impact of the initial configuration of NCs on the structural fidelity of the final epitaxially connected superlattice, and the propensity to form commonly observed defects, such as missing bridges and atomic misalignment in the superlattice due to the formation of dimers. Here, we present potential strategies to mitigate the formation of superlattice defects.

36 MATERIALS SCIENCE↗

Valence Disproportionation of GeS in the PbS Matrix Forms Pb 5 Ge 5 S 12 Inclusions with Conduction Band Alignment Leading to High n-Type Thermoelectric Performance

Converting waste heat into useful electricity using solid-state thermoelectrics has a potential for enormous global energy savings. Lead chalcogenides are among the most prominent thermoelectric materials, whose performance decreases with an increase in chalcogen amounts (e.g., PbTe>PbSe>PbS). Herein, we demonstrate the simultaneous optimization of the electrical and thermal transport properties of PbS-based compounds by alloying with GeS. The addition of GeS triggers a complex cascade of beneficial events as follows: Ge 2+ substitution in Pb 2+ and discordant off-center behavior; formation of Pb 5 Ge 5 S 12 as stable second phase inclusions through valence disproportionation of Ge 2+ to Ge0 and Ge 4+ . PbS and Pb 5 Ge 5 S 12 exhibit good conduction band energy alignment that preserves the high electron mobility; the formation of Pb 5 Ge 5 S 12 increases the electron carrier concentration by introducing S vacancies. Sb doping as the electron donor produces a large power factor and low lattice thermal conductivity (κ lat ) of ~0.61 Wm -1 K -1 . The highest performance was obtained for the 14% GeS-alloyed samples, which exhibited an increased room temperature electron mobility of ~121 cm 2 V -1 s -1 for 3 × 10 19 cm -3 carrier density, and a ZT, of 1.32 at 923 K. This is ~ 55% greater that the corresponding Sb-doped PbS sample and is one of the highest reported for the n-type PbS system. Moreover, the average ZT (ZT avg ) of ~0.76 from 400 to 923 K is the highest for PbS-based systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Splitting photons: Singlet fission in nanocrystal-molecule hybrid structures

The goal of this research is to enable all the energy contained in sunlight to be harvested by making full use of the energy contained in the blue and green wavelengths of light. Current systems are unable to extract all of the energy available from photons in this wavelength range due to rapid relaxation processes that dissipate a fraction of the energy as heat. In this work, inexpensive, earth-abundant components capable of supporting multi-excitonic processes involving more than one tightly bound excited state are investigated as a way to exceed the Shockley-Queisser limit. This research will examine hybrid organic-inorganic nanostructures capable of singlet fission, a process by which one high-energy spin-singlet state is converted into two lower-energy spin-triplet states, and subsequent triplet exciton transfer. Specifically, the organic molecules diphenylhexatriene and tetracene that maximally absorb blue light and are known to exhibit singlet fission will be bound to lead chalcogenide nanocrystals. A variety of steady-state and time-resolved spectroscopic techniques will be used to study the transfer of energy from spin-triplet excitons that are created in the organic molecules to the nanoparticle acceptors. The hybrid nanostructures here will be fully characterized both in solution or thin film via electronic absorption and photoluminescence spectroscopy, nuclear magnetic resonance spectroscopy, high-resolution mass spectrometry, transmission electron microscopy, photoelectron spectroscopy, time correlated single photon counting and transient absorption experiments. The effect of molecular and nanocrystal structure on the electronic coupling between the hybrid components will be examined to establish fundamental relationships between structure and triplet energy transfer efficiency. The findings will be directly applicable to a potential tetracene-silicon platform that may ultimately enhance the power conversion efficiency of silicon solar cells.

30 DIRECT ENERGY CONVERSION↗

PbE (E = S, Se) Colloidal Quantum Dot-Layered 2D Material Hybrid Photodetectors

Hybrid lead chalcogenide (PbE) (E = S, Se) quantum dot (QD)-layered 2D systems are an emerging class of photodetectors with unique potential to expand the range of current technologies and easily integrate into current complementary metal-oxide-semiconductor (CMOS)-compatible architectures. Herein, we review recent advancements in hybrid PbE QD-layered 2D photodetectors and place them in the context of key findings from studies of charge transport in layered 2D materials and QD films that provide lessons to be applied to the hybrid system. Photodetectors utilizing a range of layered 2D materials including graphene and transition metal dichalcogenides sensitized with PbE QDs in various device architectures are presented. Figures of merit such as responsivity (R) and detectivity (D*) are reviewed for a multitude of devices in order to compare detector performance. Finally, a look to the future considers possible avenues for future device development, including potential new materials and device treatment/fabrication options.

36 MATERIALS SCIENCE↗