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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

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NASA NTRS1979

Current leakage for low altitude satellites

Ionospheric plasma densities exceeding 1,000,000 per cu cm exist around satellites in low earth orbit. Operation of large solar arrays at high voltage may drive substantial leakage currents through this surrounding plasma. Power losses exceeding solar cell output have been observed for small arrays biased above +2,000 V. Estimates of these effects for very large power systems are developed. Recent large scale (10 meter) lab tests are reported. Estimates based on calculations of space charge limited sheath dimensions are identified as a good working model, leading to projected power losses for large arrays increasing much more slowly than for small arrays.

Mccoy, J. E.↗

NASA NTRS2010

Effect of Post-HALT Annealing on Leakage Currents in Solid Tantalum Capacitors

Degradation of leakage currents is often observed during life testing of tantalum capacitors and is sometimes attributed to the field-induced crystallization in amorphous anodic tantalum pentoxide dielectrics. However, degradation of leakage currents and the possibility of annealing of degraded capacitors have not been investigated yet. In this work the effect of annealing after highly accelerated life testing (HALT) on leakage currents in various types of solid tantalum capacitors was analyzed. Variations of leakage currents with time during annealing at temperatures from 125 oC to 180 oC, thermally stimulated depolarization (TSD) currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. Annealing resulted in a gradual decrease of leakage currents and restored their initial values. Repeat HALT after annealing resulted in reproducible degradation of leakage currents. The observed results are explained based on ionic charge instability (drift/diffusion of oxygen vacancies) in the tantalum pentoxide dielectrics using a modified Schottky conduction mechanism.

Teverovsky, Alexander↗

NASA NTRS2016

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

testing↗

NASA NTRS2014

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

dielectric polarization↗

DOE OSTI2024

Field Study of Nighttime Leakage Currents in Bifacial PV Modules: Correlation with Atmospheric Electric Field Data

Leakage currents measured on PV modules in the field originate from a potential difference between the modules' frame and the cells. They can be a relative indicator of Potential-Induced Degradation (PID) severity, especially when comparing the same module design in a different environment. As modules are not operating at night, no leakage current should be observed but our team has reported several events of nighttime leakage currents on bifacial PV modules. These events have been firstly observed during a thunderstorm that are characterized by strong atmospheric electrical field values. This lead us to believe that nighttime leakage currents could originate from the atmospheric electric charges. In this paper, we correlate nighttime leakage currents measured on bifacial PV modules with field mill data to identify the origin of nighttime leakage currents. Our results show that so far, no leakage currents at night occur when the atmospheric electric field is between 0 and 150–200 V/m (standard value for fair weather). As soon as the atmospheric electric field is out of this range, leakage currents are observed with or without rain involved. This suggests a transport of charged particles from the atmosphere to the modules' frame. A combination of heavy rain with strong atmospheric electric field results into high nighttime leakage currents with a magnitude up to 8 times higher than what observed during the day with -1500V applied. This is explained by an easier transport of the charged particles through the water droplets. Based on these results, leakage currents observed during the day might not be only due to the inherent potential difference between the frame and the cells depending on the atmospheric electric field activity. We believe that it should be taken into account in PID studies.

14 SOLAR ENERGY↗

NASA NTRS1986

Leakage-current properties of encapsulants

A theoretical modeling of leakage current in ethylene vinyl acetate (EVA) and polyvinyl butyral (PVB) modules is being developed and is described. The modeling effort derives mathematical relationships for the bulk and surface conductivites of EVA and PVB, the surface conductivities of glass and polymeric films, and the EVA and PVB pottants, all as functions of environmental parameters. Results from the modeling indicate that for glass/EVA, the glass surface controls the interfacial conductivity, although EVA bulk conductivity controls total leakage current. For PVB/glass, the interface conductivity controls leakage currents for relative humidity (RH) less than 40 to 50%, but PVB bulk conductivity controls leakage current above 50% RH.

Wen, L. C.↗

DOE OSTI2026

Electrochemical Modeling of PID Leakage Current of PV Modules: Steady-State Current, Transient Current, and RC-Equivalent Circuit

Potential-induced degradation (PID) remains a significant reliability concern for photovoltaic (PV) modules, arising when a voltage difference between the module frame and the solar cells drives unintended leakage current through the glass-encapsulant stack. Although PID ultimately manifests as PID-s, PID-p, or PID-c, the underlying behavior of the leakage current-its magnitude and time dependence-requires clearer electrochemical interpretation. Traditional explanations attribute the initial transient current to bulk capacitive elements of the glass, encapsulant, and antireflection coatings, and the steady-state current according to their effective ohmic resistance. More recent studies, however, indicate that electrochemical charge-transfer processes at the encapsulant-metallization interface can play a dominant role in defining the leakage-current path. This paper develops a unified electrochemical framework for modeling PID leakage current. First, an RC-equivalent circuit is formulated by combining conventional RC elements with a Randles-type interface to capture transient leakage current through double-layer capacitance and faradaic processes at ionic-electronic boundaries. Second, the steady-state current-voltage behavior is explained using a linearized Butler-Volmer relationship, showing that the measured ohmic response corresponds to the low-overpotential limit of charge-transfer kinetics. Analytical results demonstrate that, for typical module materials-3.2-mm soda-lime glass and 0.45-mm encapsulant-the dominant modulators to PID leakage current are the glass surface resistance (under dry-surface conditions), the glass bulk capacitance, and the encapsulant resistance (under wet-surface conditions), with soda lime glass surface and EVA/POE encapsulant resistances primarily governing steady-state current. The proposed electrochemical model is validated against measured leakage-current data, showing good agreement in both the magnitude and the time-dependent evolution of PID leakage current.

14 SOLAR ENERGY↗

NASA NTRS2010

Degradation of Leakage Currents in Solid Tantalum Capacitors Under Steady-State Bias Conditions

Degradation of leakage currents in various types of solid tantalum capacitors under steady-state bias conditions was investigated at temperatures from 105 oC to 170 oC and voltages up to two times the rated voltage. Variations of leakage currents with time under highly accelerated life testing (HALT) and annealing, thermally stimulated depolarization currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. During HALT the currents increase gradually up to three orders of magnitude in some cases, and then stabilize with time. This degradation is reversible and annealing can restore the initial levels of leakage currents. The results are attributed to migration of positively charged oxygen vacancies in tantalum pentoxide films that diminish the Schottky barrier at the MnO2/Ta2O5 interface and increase electron injection. A simple model allows for estimation of concentration and mobility of oxygen vacancies based on the level of current degradation.

Teverovsky, Alexander A.↗

DOE OSTI2025

Low leakage current in heteroepitaxial Al 0.7 Sc 0.3 N ferroelectric films on Ga N

Wurtzite ( Al , Sc ) N ferroelectrics are attractive for microelectronics applications due to their chemical and structural compatibility with wurtzite semiconductors, such as Ga N and ( Al , Ga ) N . However, the leakage current in epitaxial stacks reported to date should be reduced for reliable device operation. Here, we demonstrate low leakage current in epitaxial Al 0.7 Sc 0.3 N films on Ga N with well-saturated ferroelectric hysteresis loops that are orders of magnitude lower (i.e., 0.07 A cm − 2 ) than previously reported films (1–19 A cm − 2 ) having similar or better structural characteristics. We also show that, for these high-quality epitaxial ( Al , Sc ) N films, structural quality (edge and screw dislocations), as measured by diffraction techniques, is not the dominant contributor to leakage. Instead, the small leakage in our films is limited by thermionic emission across the interfaces, which is distinct from the large leakage due to trap-mediated bulk transport in the previously reported ( Al , Sc ) N films. To support this conclusion, we show that Al 0.7 Sc 0.3 N on lattice-matched In 0.18 Ga 0.82 N buffers with improved structural characteristics but higher interface roughness exhibit increased leakage characteristics. This demonstration of low leakage current in heteroepitaxial ( Al , Sc ) N films and understanding of the importance of interface barrier and surface roughness can guide further efforts toward improving the reliability of wurtzite ferroelectric devices. Published by the American Physical Society 2025

36 MATERIALS SCIENCE↗

NASA NTRS2015

Leakage Currents and Gas Generation in Advanced Wet Tantalum Capacitors

Currently, military grade, established reliability wet tantalum capacitors are among the most reliable parts used for space applications. This has been achieved over the years by extensive testing and improvements in design and materials. However, a rapid insertion of new types of advanced, high volumetric efficiency capacitors in space systems without proper testing and analysis of degradation mechanisms might increase risks of failures. The specifics of leakage currents in wet electrolytic capacitors is that the conduction process is associated with electrolysis of electrolyte and gas generation resulting in building up of internal gas pressure in the parts. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. In this work, in Part I, leakages currents in various types of tantalum capacitors have been analyzed in a wide range of voltages, temperatures, and time under bias. Gas generation and the level of internal pressure have been calculated in Part II for different case sizes and different hermeticity leak rates to assess maximal allowable leakage currents. Effects related to electrolyte penetration to the glass seal area have been studied and the possibility of failures analyzed in Part III. Recommendations for screening and qualification to reduce risks of failures have been suggested.

degradation mechanisms↗

NASA NTRS1947

Investigation of the Operating Properties of the Leakage Current Anemometer

Freedom from inertia, erosion of electrodes, and reaction make the leakage current particularly appropriate for the measurement of flow velocities in gases. Apparatus previously described has now been improved by reducing the size of the electrodes by one -thousandth, as is necessary aerodynamically, and by increasing the magnitude of the current from 1000 to 10,000 times; the latter result was obtained.by use of mercury high-pressure lamps set up at the one focal point of an ellipsoidal reflector with the cathodes arranged at the other focal point or by use of suitable X-ray radiation. Families of calibration curves were taken with a number of vivid tests conditions of the greatest variety and the operating properties of the instrument were widely elucidated by calculation of the sensitivity to fluctuation; this was done at first for operation at stationary conditions only; due to the freedom from inertia the instationary conditions were thus also given. Accordingly, the leakage current anemometer ought to be appropriate for investigations of turbulence,

Fucks, Wilhelm↗

DOE OSTI2025

Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes

In this study, the electrical characteristics under forward- and reverse-bias conditions of III-nitride blue and green micro-light-emitting diodes (μLEDs) are analyzed. A fitting model is proposed to determine the contributions of reverse leakage current and the effectiveness of sidewall treatments. Moreover, the forward-bias currents of the μLEDs are examined using the extracted ideality factor to examine the impacts of sidewall defects. The results show that sidewall treatments are highly effective for suppression of leakage currents. From the efficiency perspective, higher wall-plug efficiency (WPE) than external quantum efficiency (EQE) is observed when the operating voltage is lower than the photon voltage in both blue and green 20 × 20 μm 2 devices. This enhancement of the WPE over the EQE is due to the suppression of Shockley–Read–Hall (SRH) nonradiative recombination. These observations indicate that μLEDs with sidewall treatments not only improve optical performance but also further enhance the electrical performance of devices by suppressing the leakage current paths due to SRH nonradiative recombination processes.

42 ENGINEERING↗

NASA NTRS2012

Effect of Compressive Stresses on Leakage Currents in Microchip Tantalum Capacitors

Microchip tantalum capacitors are manufactured using new technologies that allow for production of small size capacitors (down to EIA case size 0402) with volumetric efficiency much greater than for regular chip capacitors. Due to a small size of the parts and leadless design they might be more sensitive to mechanical stresses that develop after soldering onto printed wiring boards (PWB) compared to standard chip capacitors. In this work, the effect of compressive stresses on leakage currents in capacitors has been investigated in the range of stresses up to 200 MPa. Significant, up to three orders of magnitude, variations of currents were observed after the stress exceeds a certain critical level that varied from 10 MPa to 180 MPa for capacitors used in this study. A stress-induced generation of electron traps in tantalum pentoxide dielectric is suggested to explain reversible variations of leakage currents in tantalum capacitors. Thermo-mechanical characteristics of microchip capacitors have been studied to estimate the level of stresses caused by assembly onto PWB and assess the risk of stress-related degradation and failures. Keywords: tantalum capacitors, leakage current, soldering, reliability, mechanical stress.

Teverovsky, Alexander↗

NASA NTRS1991

An assessment of the Space Station Freedom program's leakage current requirement

The Space Station Freedom Program requires leakage currents to be limited to less than human perception level, which NASA presently defines as 5 mA for dc. The origin of this value is traced, and the literature for other dc perception threshold standards is surveyed. It is shown that while many varying standards exist, very little experimental data is available to support them.

Nagy, Michael↗

DOE OSTI2023

Electrochemical mechanisms of leakage‐current in photovoltaic modules

Abstract This paper analyzes the mechanisms and pathways for leakage current flow observed in Si photovoltaic modules subjected to high temperature and humidity and a large voltage bias with respect to ground. The current inside of the frame is in the form of electron motion, but in the glass and polymer, it is in at least a large part attributable to the movement of ions. When the mode of current flow changes from electronic to ionic conduction, electrochemical reactions will take place at the interface. This can include reactions that produce volatile chemical species like H 2 , CO x , and O 2 , along with ionic species such as OH − and H 3 O + . Here, we see evidence of the importance of different charge carriers with different diffusion rates and the influence of electrochemical processes involved. The application of negative voltage to the cell circuit affects the resistivity of glass producing surfaces with poor conductivity but with some increases in the electrochemical potential producing complicated interactions that are important when the voltage is changed. In the polymer, there is the development of a space charge region and a chemical gradient providing two oppositional forces to current flow, which when released create a complicated discharge process. Here, we give a basic understanding of the charge/discharge of PV cells highlighting how the specific mechanisms are important in understanding some of the degradation processes in PV modules. We find that there is evidence of multiple significant charge carrier species with different diffusion time scales. The glass/polymer interface forms a depleted region of higher resistance after prolonged exposure to current. Charge also builds up at the polymer to cell antireflective coating interface and mostly flows to the gridlines to experience electrochemical reactions. These complexities result in non‐linear behavior where the apparent resistivities of the different layers change during charge/discharging processes, making the modeling of the current flow extremely difficult.

14 SOLAR ENERGY↗

NASA NTRS2015

Leakage Currents in Low-Voltage PME and BME Ceramic Capacitors

Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.

base metal electrode capacitor (BME)↗

NASA NTRS1985

Effects of temperature and moisture on module leakage currents

Experimental and analytical results are presented that characterize the rate dependency of leakage currents on environmental temperature and humidity level and quantify the influence of module construction features such as rear-surface films and foils, cell-frame gap spacings, and encapsulant resistivity and thickness. The relative roles of surface and bulk resistivity are illuminated together with their differing dependencies on surface moisture, bulk moisture, and temperature.

Mon, G.↗

NASA NTRS2011

Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of the processes under reverse bias conditions. In practice, there were instances when, due to unforeseen events, the system operated at conditions when capacitors experience periodically a relatively small reverse bias for some time followed by normal, forward bias conditions. In such a case an assessment should be made on the degree to which these capacitors are degraded by application of low-voltage reverse bias, and whether this degradation can be reversed by normal operating conditions. In this study, reverse currents in different types of tantalum capacitors were monitored at different reverse voltages below 15%VR and temperatures in the range from room to 145 C for up to 150 hours to get better understanding of the degradation process and determine conditions favorable to the unstable mode of operation. The reversibility of RB degradation has been evaluated after operation of the capacitors at forward bias conditions. The effect of reverse bias stress (RBS) on reliability at normal operating conditions was evaluated using highly accelerated life testing at voltages of 1.5VR and 2 VR and by analysis of changes in distributions of breakdown voltages. Possible mechanisms of RB degradation are discussed.

Teverovsky, Alexander A.↗