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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2015

Level-Set Topology Optimization with Aeroelastic Constraints

Level-set topology optimization is used to design a wing considering skin buckling under static aeroelastic trim loading, as well as dynamic aeroelastic stability (flutter). The level-set function is defined over the entire 3D volume of a transport aircraft wing box. Therefore, the approach is not limited by any predefined structure and can explore novel configurations. The Sequential Linear Programming (SLP) level-set method is used to solve the constrained optimization problems. The proposed method is demonstrated using three problems with mass, linear buckling and flutter objective and/or constraints. A constraint aggregation method is used to handle multiple buckling constraints in the wing skins. A continuous flutter constraint formulation is used to handle difficulties arising from discontinuities in the design space caused by a switching of the critical flutter mode.

Dunning, Peter D.↗
NASA NTRS2011

Accurate Adaptive Level Set Method and Sharpening Technique for Three Dimensional Deforming Interfaces

In this paper, we demonstrate improved accuracy of the level set method for resolving deforming interfaces by proposing two key elements: (1) accurate level set solutions on adapted Cartesian grids by judiciously choosing interpolation polynomials in regions of different grid levels and (2) enhanced reinitialization by an interface sharpening procedure. The level set equation is solved using a fifth order WENO scheme or a second order central differencing scheme depending on availability of uniform stencils at each grid point. Grid adaptation criteria are determined so that the Hamiltonian functions at nodes adjacent to interfaces are always calculated by the fifth order WENO scheme. This selective usage between the fifth order WENO and second order central differencing schemes is confirmed to give more accurate results compared to those in literature for standard test problems. In order to further improve accuracy especially near thin filaments, we suggest an artificial sharpening method, which is in a similar form with the conventional re-initialization method but utilizes sign of curvature instead of sign of the level set function. Consequently, volume loss due to numerical dissipation on thin filaments is remarkably reduced for the test problems

Kim, Hyoungin↗
DOE OSTI2024

Level-set topology optimization with PDE generated conformal meshes

This paper presents a level-set topology optimization approach that uses conformal meshes for the analysis of the displacement field. The structure’s boundary is represented by the iso-contour of a level-set field discretized on a fixed background design mesh. The conformal mesh is updated for each design iteration via a PDE based mesh morphing process that identifies the set of facets in the background mesh that are homeomorphic to the boundary and relaxes the homeomorphic mesh to conform to the structure’s boundary and ensure high element quality. The conformal mesh allows for a more accurate computation of the response versus density and some level-set based methods which interpolate material properties using the volume fraction. Numerical examples illustrate the proposed approach by optimizing linear-elastic two- and three-dimensional structures, wherein insight into the performance of the mesh morphing process is provided. The examples also highlight the scalability of the approach.

42 ENGINEERING↗
DOE OSTI2024

Adaptive immersed isogeometric level-set topology optimization

Here, this paper presents for the first time an adaptive immersed approach for level-set topology optimization using higher-order truncated hierarchical B-spline discretizations for design and state variable fields. Boundaries and interfaces are represented implicitly by the iso-contour of one or multiple level-set functions. An immersed finite element method, the eXtended IsoGeometric Analysis, is used to predict the physical response. The proposed optimization framework affords different adaptively refined higher-order B-spline discretizations for individual design and state variable fields. The increased continuity of higher-order B-spline discretizations together with local refinement enables direct control over the accuracy of the representation of each field while simultaneously reducing computational cost compared to uniformly refined discretizations. A flexible mesh adaptation strategy enables local refinement based on geometric measures or physics-based error indicators. These adaptive discretization and analysis approaches are integrated into gradient-based optimization schemes, evaluating the design sensitivities using the adjoint method. Numerical studies illustrate the features of the proposed framework with static, linear elastic, multi-material, two- and three-dimensional problems. The examples provide insight into the effect of refining the design variable field on the optimization result and the convergence rate of the optimization process. Using coarse higher-order B-spline discretizations for level-set fields promotes the development of smooth designs and suppresses the emergence of small features. Moreover, adaptive mesh refinement for state variable fields results in a reduction of overall computational cost. Higher-order B-spline discretizations are especially interesting when evaluating gradients of state variable fields due to their higher inter-element continuity.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A Level Set Model for Structured Mesh Representation of Fibrous Preforms used in Composites Manufacturing

Here, a model for implicit representation of fibrous and woven preforms used for composites manufacturing is described. The method is based on a level set function defined on a structured mesh to implicitly capture the complex fiber and weave geometries. Since most software packages used to model woven preforms are based on unstructured mesh, a numerical model for transforming a discretized surface to a structured mesh representation and vice-a-versa is presented. Specific emphasis is on scalable computation of a level set function for large and complex 3D woven structures from a triangulated surface of the smallest unit (yarn). The model is applied to capture a periodic 3D layered 5-harness satin (5HS) weave geometry on a structured mesh. Geometric transformations needed to efficiently compute the level set function for the 3D structure on a high resolution mesh are described. Effects of mesh resolution on the geometric features such as number of resolved fibers, effective fiber size, and the surface area to volume ratio of the iso-surface are analyzed. Using the distance property of the level set function, an approach to evaluate the structure function resulting from transient evolving topology representing densification due to matrix phase depositions is also presented. The approach captures transition of the geometric characteristic from fiber governed at early stages of densification to yarn governed at the terminal stage.

36 MATERIALS SCIENCE↗
NASA NTRS2014

Aerostructural Level Set Topology Optimization for a Common Research Model Wing

The purpose of this work is to use level set topology optimization to improve the design of a representative wing box structure for the NASA common research model. The objective is to minimize the total compliance of the structure under aerodynamic and body force loading, where the aerodynamic loading is coupled to the structural deformation. A taxi bump case was also considered, where only body force loads were applied. The trim condition that aerodynamic lift must balance the total weight of the aircraft is enforced by allowing the root angle of attack to change. The level set optimization method is implemented on an unstructured three-dimensional grid, so that the method can optimize a wing box with arbitrary geometry. Fast matching and upwind schemes are developed for an unstructured grid, which make the level set method robust and efficient. The adjoint method is used to obtain the coupled shape sensitivities required to perform aerostructural optimization of the wing box structure.

Dunning, Peter D.↗
NASA NTRS2003

A Cartesian Adaptive Level Set Method for Two-Phase Flows

In the present contribution we develop a level set method based on local anisotropic Cartesian adaptation as described in Ham et al. (2002). Such an approach should allow for the smallest possible Cartesian grid capable of resolving a given flow. The remainder of the paper is organized as follows. In section 2 the level set formulation for free surface calculations is presented and its strengths and weaknesses relative to the other free surface methods reviewed. In section 3 the collocated numerical method is described. In section 4 the method is validated by solving the 2D and 3D drop oscilation problem. In section 5 we present some results from more complex cases including the 3D drop breakup in an impulsively accelerated free stream, and the 3D immiscible Rayleigh-Taylor instability. Conclusions are given in section 6.

Ham, F.↗
DOE OSTI2026

An efficient level set method for tracking many materials

Here, we present an efficient level set method to track an arbitrary number of materials. The algorithm is optimal in the sense that it only needs to store a single unsigned distance-like function and a single integer indicator function, independent of the number of materials or distinct regions being tracked. Furthermore, for smooth velocity fields and smooth interface shape, arbitrarily high order solutions can be demonstrated. For interfaces that are or become kinked, the solution is limited to second-order convergence rates in the L 1 norm and first-order in the L ∞ norm.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS2006

Numerical Schemes for the Hamilton-Jacobi and Level Set Equations on Triangulated Domains

Borrowing from techniques developed for conservation law equations, we have developed both monotone and higher order accurate numerical schemes which discretize the Hamilton-Jacobi and level set equations on triangulated domains. The use of unstructured meshes containing triangles (2D) and tetrahedra (3D) easily accommodates mesh adaptation to resolve disparate level set feature scales with a minimal number of solution unknowns. The minisymposium talk will discuss these algorithmic developments and present sample calculations using our adaptive triangulation algorithm applied to various moving interface problems such as etching, deposition, and curvature flow.

Barth, Timothy J.↗
NASA NTRS1998

Simulation of Etching Profiles Using Level Sets

Using plasma discharges to etch trenches and via holes in substrates is an important process in semiconductor manufacturing. Ion enhanced etching involves both neutral fluxes, which are isotropic, and ion fluxes, which are anisotropic. The angular distributions for the ions determines the degree of vertical etch, while the amount of the neutral fluxes determines the etch rate. We have developed a 2D profile evolution simulation which uses level set methods to model the plasma-substrate interface. Using level sets instead of traditional string models avoids the use of complicated delooping algorithms. The simulation calculates the etch rate based on the fluxes and distribution functions of both ions and neutrals. We will present etching profiles of Si substrates in low pressure (10s mTorr) Ar/Cl2 discharges for a variety of incident ion angular distributions. Both ion and neutral re-emission fluxes are included in the calculation of the etch rate, and their contributions to the total etch profile will be demonstrated. In addition, we will show RIE lag effects as a function of different trench aspect ratios. (For sample profiles, please see http://www.ipt.arc.nasa.gov/hwangfig1.html)

Hwang, Helen↗
NASA NTRS1997

Etch Profile Simulation Using Level Set Methods

Etching and deposition of materials are critical steps in semiconductor processing for device manufacturing. Both etching and deposition may have isotropic and anisotropic components, due to directional sputtering and redeposition of materials, for example. Previous attempts at modeling profile evolution have used so-called "string theory" to simulate the moving solid-gas interface between the semiconductor and the plasma. One complication of this method is that extensive de-looping schemes are required at the profile corners. We will present a 2D profile evolution simulation using level set theory to model the surface. (1) By embedding the location of the interface in a field variable, the need for de-looping schemes is eliminated and profile corners are more accurately modeled. This level set profile evolution model will calculate both isotropic and anisotropic etch and deposition rates of a substrate in low pressure (10s mTorr) plasmas, considering the incident ion energy angular distribution functions and neutral fluxes. We will present etching profiles of Si substrates in Ar/Cl2 discharges for various incident ion energies and trench geometries.

Hwang, Helen H.↗
NASA NTRS1998

Profile Evolution Simulation in Etching Systems Using Level Set Methods

Semiconductor device profiles are determined by the characteristics of both etching and deposition processes. In particular, a highly anisotropic etch is required to achieve vertical sidewalls. However, etching is comprised of both anisotropic and isotropic components, due to ion and neutral fluxes, respectively. In Ar/Cl2 plasmas, for example, neutral chlorine reacts with the Si surfaces to form silicon chlorides. These compounds are then removed by the impinging ion fluxes. Hence the directionality of the ions (and thus the ion angular distribution function, or IAD), as well as the relative fluxes of neutrals and ions determines the amount of undercutting. One method of modeling device profile evolution is to simulate the moving solid-gas interface between the semiconductor and the plasma as a string of nodes. The velocity of each node is calculated and then the nodes are advanced accordingly. Although this technique appears to be relatively straightforward, extensive looping schemes are required at the profile corners. An alternate method is to use level set theory, which involves embedding the location of the interface in a field variable. The normal speed is calculated at each mesh point, and the field variable is updated. The profile comers are more accurately modeled as the need for looping algorithms is eliminated. The model we have developed is a 2-D Level Set Profile Evolution Simulation (LSPES). The LSPES calculates etch rates of a substrate in low pressure plasmas due to the incident ion and neutral fluxes. For a Si substrate in an Ar/C12 gas mixture, for example, the predictions of the LSPES are identical to those from a string evolution model for high neutral fluxes and two different ion angular distributions.(2) In the figure shown, the relative neutral to ion flux in the bulk plasma is 100 to 1. For a moderately isotropic ion angular distribution function as shown in the cases in the left hand column, both the LSPES (top row) and rude's string method (bottom row) predict tapered profiles. The LSPES uses an AD with a FWHM = 13.5 degrees, and rude's model uses a ratio of sheath voltage to ion temperature of 50. The more anisotropic IADs produce profiles with more vertical sidewalls and a wider bottom surface, as shown in the right hand column. Here, the LSPES has an AD with a FWHM = 2 degrees, and rude's model uses a ratio of 500 of sheath voltage to ion temperature. The agreement between the LSPES and rude's model is excellent in both cases. We will present etching profiles generated by the LSPES, including calculations of the re-emitted fluxes of both neutrals and ions off of the profile walls. In addition, we will show the effect of geometric structures (overhangs, etc.) on the etching profiles. Other physical aspects, such as surface diffusion, will also be included in the model.

Hwang, Helen H.↗
NASA NTRS2019

Level Set Topology Optimization of Load Carrying Heat Dissipation Devices

In this paper, we introduce a level set method topology optimization method of structures subjected to coupled mechanical and thermal loads. Different examples considering compliance minimization and stress minimization under temperature and volume constraints, and mass minimization under stress and temperature constraints, are presented. The p-norm of the stress field and temperature field is used to approximate the maximum stress and temperature, respectively. The developed method is applied in the design of an L-bracket and a battery package. The results show that designs obtained by ignoring the thermal or structural constraints can result in high values of temperature or stress, respectively.

Kambampati, Sandilya↗
NASA NTRS1997

Numerical Schemes for the Hamilton-Jacobi and Level Set Equations on Triangulated Domains

Borrowing from techniques developed for conservation law equations, numerical schemes which discretize the Hamilton-Jacobi (H-J), level set, and Eikonal equations on triangulated domains are presented. The first scheme is a provably monotone discretization for certain forms of the H-J equations. Unfortunately, the basic scheme lacks proper Lipschitz continuity of the numerical Hamiltonian. By employing a virtual edge flipping technique, Lipschitz continuity of the numerical flux is restored on acute triangulations. Next, schemes are introduced and developed based on the weaker concept of positive coefficient approximations for homogeneous Hamiltonians. These schemes possess a discrete maximum principle on arbitrary triangulations and naturally exhibit proper Lipschitz continuity of the numerical Hamiltonian. Finally, a class of Petrov-Galerkin approximations are considered. These schemes are stabilized via a least-squares bilinear form. The Petrov-Galerkin schemes do not possess a discrete maximum principle but generalize to high order accuracy.

Barth, Timothy J.↗
DOE OSTI2024

Data-Driven Computation of Probabilistic Marching Cubes for Efficient Visualization of Level-Set Uncertainty

Uncertainty visualization is an important emerging research area. Being able to visualize data uncertainty can help scientists improve trust in analysis and decision-making. However, visualizing uncertainty can add computational overhead, which can hinder the efficiency of analysis. In this paper, we propose novel data-driven techniques to reduce the computational requirements of the probabilistic marching cubes (PMC) algorithm. PMC is an uncertainty visualization technique that studies how uncertainty in data affects level-set positions. However, the algorithm relies on expensive Monte Carlo (MC) sampling for the multivariate Gaussian uncertainty model because no closed-form solution exists for the integration of multivariate Gaussian. In this work, we propose the eigenvalue decomposition and adaptive probability model techniques that reduce the amount of MC sampling in the original PMC algorithm and hence speed up the computations. Our proposed methods produce results that show negligible differences compared with the original PMC algorithm demonstrated through metrics, including root mean squared error, maximum error, and difference images. We demonstrate the performance and accuracy evaluations of our data-driven methods through experiments on synthetic and real datasets.

Athawale, Tushar↗
DOE OSTI2024

An Entropy-Based Test and Development Framework for Uncertainty Modeling in Level-Set Visualizations

We present a simple comparative framework for testing and developing uncertainty modeling in uncertain marching cubes implementations. The selection of a model to represent the probability distribution of uncertain values directly influences the memory use, run time, and accuracy of an uncertainty visualization algorithm. We use an entropy calculation directly on ensemble data to establish an expected result and then compare the entropy from various probability models, including uniform, Gaussian, histogram, and quantile models. Our results verify that models matching the distribution of the ensemble indeed match the entropy. We further show that fewer bins in nonparametric histogram models are more effective whereas large numbers of bins in quantile models approach data accuracy.

Sisneros, Robert↗