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Results for “local density of states”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Mesoscopic variations of local density of states in disordered superconductors.

We explore correlations of inhomogeneous local density of states (LDoS) for impure superconductors with different symmetries of the order parameter (s wave and d wave) and different types of scatterers (elastic and magnetic impurities). It turns out that the LDoS correlation function of superconductor always slowly decreases with distance up to the phase-breaking length l{sub {phi}} and its long-range spatial behavior is determined only by the dimensionality, as in normal metals. On the other hand, the energy dependence of this correlation function is sensitive to symmetry of the order parameter and nature of scatterers. Only in the simplest case of s-wave superconductor with elastic scatterers the inhomogeneous LDoS is directly connected to the corresponding characteristics of normal metal. We found that in presence of pair-breaking scattering relative LDoS variations increase with decreasing energy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Size Effect of Local Current-Voltage Characteristics of MX 2 Nanoflakes: Local Density of States Reconstruction from Scanning Tunneling Microscopy Experiments

Local current-voltage characteristics for low-dimensional transition-metal dichalcogenides (LDTMD), as well as the reconstruction of their local density of states (LDOS) from scanning tunneling microscopy (STM) experiments, are of fundamental interest and can be useful for advanced applications. Most of the existing models either have limited applicability for complex-shaped LDTMDs (e.g., those based on the Simmons approach) or require solving of an ill-defined integral equation to deconvolute the unknown LDOS (e.g., those based on the Tersoff approach). Using a serial expansion of the Tersoff formulas, we propose a flexible method to reconstruct the LDOS from local current-voltage characteristics measured in STM experiments. We establish a set of key physical parameters, which characterize the tunneling current of a STM-probe–sample contact and the sample LDOS expanded in Gaussian functions. Using a direct variational method coupled with probabilistic analysis, we determine these parameters from the STM experiments for MoS2 nanoflakes with different numbers of layers. The main result is the reconstruction of the LDOS in a relatively wide energy range around the Fermi level, which allows us to gain insight into the local band structure of LDTMDs. The reconstructed LDOS reveal pronounced size effects for the single-layer, two-layer, and three-layer MoS 2 nanoflakes, which we relate to the low dimensionality and strong bending or corrugation of the nanoflakes. We hope that the proposed elaboration of the Tersoff approach, allowing LDOS reconstruction, will be of critical interest for the quantitative description of STM experiments and also of use to better understand the microscopic physical aspects of the surface, strain, and bending contributions to the LDTMDs’ electronic properties.

42 ENGINEERING↗
DOE OSTI2021

Harnessing the photonic local density of states in graphene moiré superlattices

In this work we investigate the electromagnetic local density of states (LDOS) near a twisted bilayer graphene (TBG) deposited over a general isotropic substrate. The band structure of the TBG is calculated within a tight-binding framework, and then used to determine the TBG's conductivity. The latter presents a nontrivial dependence upon the angle of twist, which shows up in the LDOS, allowing for a moiré pattern-dependent quantum emission. For some specific twist angles we show that it is possible to either enhance or decrease the LDOS by an order of magnitude at selected frequencies when compared to the monolayer. Furthermore, this impressive variation is explained in terms of the presence/absence of well defined surface plasmon polaritons (SPPs). Altogether our findings demonstrate that TBG is an alternative, versatile material platform for controlling spontaneous emission and enhancing light-matter interactions, and pave the way for further studies and applications of quantum emission in the emerging class of two-dimensional moiré materials.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Broadband enhancement of local density of states using silicon-compatible hyperbolic metamaterials

Light emitting silicon quantum dots by colloidal synthesis were uniformly spin-coated into a 20 nm-thick film and deposited atop a hyperbolic metamaterial of alternating TiN and SiO{sub 2} sub-wavelength layers. Using steady-state and time-resolved photoluminescence spectroscopy as a function of the emission wavelength in partnership with rigorous electromagnetic modeling of dipolar emission, we demonstrate enhanced Local Density of States and coupling to high-k modes in a broad spectral range. These findings provide an alternative approach for the engineering of novel Si-compatible broadband sources that leverage the control of radiative transitions in hyperbolic metamaterials and the flexibility of the widespread Si platform.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Phonon dispersion and local density of states in NiPd alloy using modified embedded atom method potential

A modified embedded atom method (MEAM) potential model up to second neighbours has been used to calculate the phonon dispersions for Ni{sub 0.55}Pd{sub 0.45} alloy in which Pd is introduced as substitutional impurity. Using the force-constants obtained from MEAM potential, the local vibrational density of states in host Ni and substitutional Pd atoms using Green’s function method has been calculated. The calculation of phonon dispersions of NiPd alloy shows a good agreement with the experimental results. Condition of resonance mode has also been investigated and resonance mode in the frequency spectrum of impurity atom at low frequency is observed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Physical properties and electronic structure of a new barium titanate suboxide Ba{sub 1+δ}Ti{sub 13−δ}O{sub 12} (δ = 0.11)

The structure, transport, thermodynamic properties, x-ray absorption spectra (XAS), and electronic structure of a new barium titanate suboxide, Ba{sub 1+δ}Ti{sub 13−δ}O{sub 12} (δ = 0.11), are reported. It is a paramagnetic poor metal with hole carriers dominating the transport. Fermi liquid behavior appears at low temperature. The oxidization state of Ti obtained by the XAS is consistent with the metallic Ti{sup 2+} state. Local density approximation band structure calculations reveal the material is near the Van Hove singularity. The pseudogap behavior in the Ti-d band and the strong hybridization between the Ti-d and O-p orbitals reflect the characteristics of the building blocks of the Ti{sub 13} semi-cluster and the TiO{sub 4} quasi-squares, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Atomic Manipulation of Single Erbium on GaAs(110): From Adatom Motion to Creation and Control of Bistable Substitutions

We demonstrate atomic-scale control over the position and configuration of single erbium (Er) atoms at the GaAs(110) surface using scanning tunneling microscopy (STM). By applying voltage pulses from the STM tip, we drive Er adatoms to move sequentially among three distinct adsorption sites and controllably substitute into Ga lattice sites. The resulting substitutional Er atoms exhibit two isoelectronic configurations that differ by less than one angstrom in lateral position and can be reversibly switched by additional voltage pulses. Differential conductance spectroscopy shows differences in the unoccupied local electronic states for the two substitutional configurations, and an absence of mid-gap states. Preliminary density functional theory (DFT) calculations support these findings, identifying the most stable adsorption and substitutional sites, their relative binding energies, charge states, and local density of states (LDOS) characteristics. Together, the experimental and theoretical results establish a method for precise, reversible manipulation of rare-earth dopants at semiconductor surfaces, opening a pathway to engineer atomic-scale quantum and optoelectronic functionalities.

Poche, Steven [Ohio State University]↗
DOE OSTI2015

Tailoring local density of optical states to control emission intensity and anisotropy of quantum dots in hybrid photonic-plasmonic templates

We report results of controlled tuning of the local density of states (LDOS) in versatile, flexible, and hierarchical self assembled plasmonic templates. Using 5 nm diameter gold (Au) spherical nanoantenna within a polymer template randomly dispersed with quantum dots, we show how the photoluminescence intensity and lifetime anisotropy of these dots can be significantly enhanced through LDOS tuning. Finite difference time domain simulations corroborate the experimental observations and extend the regime of enhancement to a wider range of geometric and spectral parameters bringing out the versatility of these functional plasmonic templates. It is also demonstrated how the templates act as plasmonic resonators for effectively engineer giant enhancement of the scattering efficiency of these nano antenna embedded in the templates. Our work provides an alternative method to achieve spontaneous emission intensity and anisotropy enhancement with true nanoscale plasmon resonators.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Valley filtering in strain-induced α-$\mathcal{T}_3$ quantum dots

We test the valley filtering capabilities of a quantum dot inscribed by locally straining an α-$\mathcal{T}_3$ lattice. Specifically, we consider an out-of-plane Gaussian bump in the center of a four-terminal configuration and calculate the generated pseudo-magnetic field having opposite direction for electrons originating from different valleys, the resulting valley-polarized currents, and the conductance between the injector and collector situated opposite one another. Depending on the quantum dot’s width and width-to-height ratio, we detect different transport regimes with and without valley filtering for both the α-$\mathcal{T}_3$ and Dice lattice structures. In addition, we analyze the essence of the conductance resonances with high valley polarization in terms of related (pseudo) Landau levels, the spatial distribution of the local density of states and the local current densities. The observed local charge and current density patterns reflect the local inversion symmetry-breaking by the strain, besides the global inversion symmetry breaking due to the scaling parameter α. By this way we can also filter out different sublattices

36 MATERIALS SCIENCE↗
DOE OSTI2022

Multiband superconductivity in strongly hybridized 1 T ' - WTe 2 / NbSe 2 heterostructures

The interplay of topology and superconductivity has become a subject of intense research in condensed-matter physics for the pursuit of topologically nontrivial forms of superconducting pairing. An intrinsically normal-conducting material can inherit superconductivity via electrical contact to a parent superconductor via the proximity effect, usually understood as Andreev reflection at the interface between the distinct electronic structures of two separate conductors. However, at high interface transparency, strong coupling inevitably leads to changes in the band structure, locally, owing to hybridization of electronic states. Here, we investigate such strongly proximity-coupled heterostructures of monolayer $1T$' - $\mathrm{WTe_2}$ grown on NbSe 2 by van der Waals epitaxy. The superconducting local density of states, resolved in scanning tunneling spectroscopy down to 500 mK, reflects a hybrid electronic structure well described by a multiband framework based on the McMillan equations which captures the multiband superconductivity inherent to the NbSe 2 substrate and that is induced by proximity to $\mathrm{WTe_2}$ self-consistently. Our material-specific tight-binding model captures the hybridized heterostructure quantitatively and confirms that strong interlayer hopping gives rise to a semimetallic density of states in the two-dimensional $\mathrm{WTe_2}$ bulk, even for nominally band-insulating crystals. The model further accurately predicts the measured order parameter Δ ≅ 0.6 meV induced in the $\mathrm{WTe_2}$ monolayer bulk, stable beyond a 2 T magnetic field. So we believe that our detailed multiband analysis of the hybrid electronic structure provides a useful tool for sensitive spatial mapping of induced order parameters in proximitized atomically thin topological materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Localized Phonon Densities of States at Grain Boundaries in Silicon

Since it is now possible to record vibrational spectra at nanometer scales in the electron microscope, it is of interest to explore whether extended defects in crystals such as dislocations or grain boundaries will result in measurable changes of the phonon densities of states (dos) that are reflected in the spectra. Phonon densities of states were calculated for a set of high angle grain boundaries in silicon. The boundaries are modeled by supercells with up to 160 atoms, and the vibrational densities of states were calculated by taking the Fourier transform of the velocity–velocity autocorrelation function from molecular dynamics simulations with larger supercells doubled in all three directions. In selected cases, the results were checked on the original supercells by comparison with the densities of states obtained by diagonalizing the dynamical matrix calculated using density functional theory. Near the core of the grain boundary, the height of the optic phonon peak in the dos at 60 meV was suppressed relative to features due to acoustic phonons that are largely unchanged relative to their bulk values. This can be attributed to the variation in the strength of bonds in grain boundary core regions where there is a range of bond lengths.

Materials Science↗
DOE OSTI2017

Structure and Electronic Properties of Interface-Confined Oxide Nanostructures

The controlled fabrication of nanostructures has often made use of a substrate template to mediate and control the growth kinetics. Electronic substrate-mediated interactions have been demonstrated to guide the assembly of organic molecules or the nucleation of metal atoms but usually at cryogenic temperatures, where the diffusion has been limited. Combining STM, STS, and DFT studies, we report that the strong electronic interaction between transition metals and oxides could indeed govern the growth of low-dimensional oxide nanostructures. As a demonstration, a series of FeO triangles, which are of the same structure and electronic properties but with different sizes (side length >3 nm), are synthesized on Pt(111). The strong interfacial interaction confines the growth of FeO nanostructures, leading to a discrete size distribution and a uniform step structure. Given the same interfacial configuration, as-grown FeO nanostructures not only expose identical edge/surface structure but also exhibit the same electronic properties, as manifested by the local density of states and local work functions. We expect the interfacial confinement effect can be generally applied to control the growth of oxide nanostructures on transition metal surfaces. These oxide nanostructures of the same structure and electronic properties are excellent models for studies of nanoscale effects and applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Excitation and tunneling spectra of a fractional quantum Hall system in the thin-cylinder limit

Here, the excitations of fractional quantum Hall effect (FQHE) states have been largely inaccessible to experimental probes until recently. New electron scanning tunneling microscopy (STM) results from Hu et al. [Nat. Phys. 21, 716 (2025)] show promise in detecting and identifying these excited states via the local density of states (LDOS) spectrum. On a torus, there exists a mapping from the lowest Landau level states to a 1D lattice with a Hamiltonian that features dipole moment conservation. In this work, we apply perturbation theory starting from the thin-cylinder limit (𝐿 𝑥 → ∞, 𝐿 𝑦 < 𝑙 𝐵 for torus dimensions 𝐿 𝑥 and 𝐿 𝑦 and magnetic length 𝑙 𝐵 ) to obtain an analytical approach to the low-lying neutral and charged excitations of the 𝜈 = 1/3 FQHE state. Notably, in the thin cylinder, we can systematically enumerate all the low-lying excitations by the patterns of “dipoles” formed by the electron occupation pattern on the 1D lattice. We find that the thin-cylinder limit predicts a significant dispersion of the low-lying neutral excitations but sharpness of the LDOS spectra, which measure charged excitations. We also discuss connections between our work and several different approaches to the FQHE STM spectra, including those using the composite fermion theory. Numerical exact diagonalization beyond the thin-cylinder limit suggests that the energies of charged excitations remain largely confined to a narrow range of energies, which in experiments might appear as a single peak.

Adhidewata, Jyesta M. [University of California, B↗
DOE OSTI2020

Native defects in antiferromagnetic topological insulator MnBi 2 Te 4

Using scanning tunneling microscopy and spectroscopy, in this study we visualized the native defects in antiferromagnetic topological insulator MnBi 2 Te 4 . Two native defects, Mn Bi and Bi Te antisites, can be well resolved in the topographic images. Mn Bi tend to suppress the density of states at the conduction band edge. Spectroscopy imaging reveals a localized peaklike local density of state at ~ 80 meV below the Fermi energy. A careful inspection of topographic and spectroscopic images, combined with density functional theory calculation, suggests this results from Bi Mn antisites at Mn sites. The random distribution of Mn Bi and Bi Mn antisites results in spatial fluctuation of local density of states near the Fermi level in MnBi 2 Te 4 .

36 MATERIALS SCIENCE↗
DOE OSTI2017

Localization landscape theory of disorder in semiconductors. I. Theory and modeling

Here, we present here a model of carrier distribution and transport in semiconductor alloys accounting for quantum localization effects in disordered materials. This model is based on the recent development of a mathematical theory of quantum localization which introduces for each type of carrier a spatial function called localization landscape. These landscapes allow us to predict the localization regions of electron and hole quantum states, their corresponding energies, and the local densities of states. We show how the various outputs of these landscapes can be directly implemented into a drift-diffusion model of carrier transport and into the calculation of absorption/emission transitions. This creates a new computational model which accounts for disorder localization effects while also capturing two major effects of quantum mechanics, namely, the reduction of barrier height (tunneling effect) and the raising of energy ground states (quantum confinement effect), without having to solve the Schrödinger equation. Finally, this model is applied to several one-dimensional structures such as single quantum wells, ordered and disordered superlattices, or multiquantum wells, where comparisons with exact Schrödinger calculations demonstrate the excellent accuracy of the approximation provided by the landscape theory.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Superconductivity in Doped Quantum Anomalous Hall Insulators

We study theoretically the superconductivity in doped quantum anomalous Hall insulators based on the Bogoliubov-de Gennes equations. The topological invariant is defined through which the phase diagram is obtained self-consistently. The energy spectrum and the excitations of the possible Majorana Fermions in each phase are discussed. The local density of states is studied. We propose that the zero energy peaks in the local density of states is not sufficient to identify the Majorana Fermions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗