Reducing Bias Current Without Trading Voltage Headroom in Low Noise Amplifiers.
Abstract not provided.
Frederick, Vic↗
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Design of microwave broadband CMOS transmitter and receiver circuits for MIR and ECEI plasma diagnostics
To efficiently determine the plasma electron density fluctuations using the MIR diagnostic technique, a 55–75 GHz 65 nm-CMOS transmitter has been developed where four separate intermediate frequency (IF) signals are up-converted, amplified, and then combined to generate an 8-tone RF output; a broadband 90 nm-CMOS receiver has also been constructed, which consists of an RF-low noise amplifier (LNA), mixer, and IF amplifier. The circuits and their corresponding modules will soon be deployed on the DIII-D and NSTX-U fusion devices. A 110–140 GHz 65 nm-CMOS receiver has also been designed, which is suitable for measuring the deep-core temperature fluctuations in the DIII-D tokamak using the electron cyclotron emission imaging diagnostic system. In addition to the RF-LNA/balun, mixer, and IF amplifier, an LO balun/tripler and driving amplifier are now included in this highly integrated circuit chip. By adopting the microwave and millimeterwave system-on-chip concept in the front-end system design, this paper demonstrates that compact transmitter and receiver modules can be easily built, which, in turn, facilitates array implementation and maintenance.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
A 30‐GHz low‐power CMOS LNA for 5G communication systems
Abstract This paper presents theoretical analysis and design procedures for low noise amplifiers (LNAs) in advanced CMOS technologies. For demonstration, a 30‐GHz LNA designed for 5G millimeter‐wave communication systems was fabricated in a 65‐nm CMOS process. It provides a power gain of 22.6 dB with a noise figure of 3.2 dB while drawing 7.3 mW from a 1.2 V supply.
Liu, Jiye↗
W-band system-on-chip electron cyclotron emission imaging system on DIII-D
Monolithic, millimeter wave “system-on-chip” (SoC) technology has been employed in heterodyne receiver integrated circuit radiometers in a newly developed Electron Cyclotron Emission Imaging (ECEI) system on the DIII-D tokamak for 2D electron temperature profile and fluctuation evolution diagnostics. Here, a prototype module operating in E-band (72-80 GHz) was first employed in a 2 x 10 element array that demonstrated significant improvements over the previous quasi-optical Schottky diode mixer arrays during the 2018 operational campaign of the DIII-D tokamak. For compatibility with International Thermonuclear Experimental Reactor (ITER) relevant scenarios on DIII-D, the SoC ECEI system was upgraded with 20 horn-waveguide receiver modules. Each individual module contains a University of California at Davis designed W-band (75 -110 GHz) receiver die that integrates a broadband low noise amplifier (LNA), a double balanced down-converting mixer, and a x4 multiplier on the local oscillator (LO) chain. A x2 multiplier and two IF amplifiers are packaged and selected to further boost the signal strength as well as downconvert the signal frequency. The upgraded W-band array exhibits > 30 dB additional gain and 20x improvement in noise temperature comparing with the previous Schottky diode radio frequency (RF) mixer input systems; an internal 8 times multiplier chain is used to bring down the LO frequency below 12 GHz, thereby obviating the need for a large aperture for quasi-optical LO coupling and replacing it with coaxial connectors. The horn-waveguide shielding housing avoids out-of-band noise interference on each individual module. The upgraded ECEI system plays an important role for absolute electron temperature evolution and fluctuation measurements for edge and core region transport physics studies.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
System-on-chip upgrade of millimeter-wave imaging diagnostics for fusion plasma
Monolithic, millimeter wave “system-on-chip” technology has been employed in chip heterodyne radiometers in a newly developed Electron Cyclotron Emission Imaging (ECEI) system on the DIII-D tokamak for 2D electron temperature and fluctuation diagnostics. The system employs 20 horn-waveguide receiver modules each with customized W-band (75–110 GHz) monolithic microwave integrated circuit chips comprising a W-band low noise amplifier, a balanced mixer, a ×2 local oscillator (LO) frequency doubler, and two intermediate frequency amplifier stages in each module. Compared to previous quasi-optical ECEI arrays with Schottky mixer diodes mounted on planar antennas, the upgraded W-band array exhibits >30 dB additional gain and 20× improvement in noise temperature; an internal eight times multiplier chain is used to provide LO coupling, thereby eliminating the need for quasi-optical coupling. The horn-waveguide shielding housing avoids out-of-band noise interference on each module. The upgraded ECEI system plays an important role for absolute electron temperature and fluctuation measurements for edge and core region transport physics studies. An F-band receiver chip (up to 140 GHz) is under development for additional fusion facilities with a higher toroidal magnetic field. Visualization diagnostics provide multi-scale and multi-dimensional data in plasma profile evolution. Finally, a significant aspect of imaging measurement is focusing on artificial intelligence for science applications.
47 OTHER INSTRUMENTATION↗
System-on-chip approach microwave imaging reflectometer on DIII-D tokamak
System-on-chip millimeter wave integrated circuit technology is used on the two-dimensional millimeter-wave imaging reflectometer (MIR) upgrade for density fluctuation imaging on the DIII-D tokamak fusion plasma. Customized CMOS chips have been successfully developed for the transmitter module and receiver module array, covering the 55–75 GHz working band. The transmitter module has the capability of simultaneously launching eight tunable probe frequencies (>0 dBm output power each). The receiver enclosure contains 12 receiver modules in two vertical lines. The quasi-optical local oscillator coupling of previous MIR systems has been replaced with an internal active frequency multiplier chain for improved local oscillator power delivery and flexible installation in a narrow space together with improved shielding against electromagnetic interference. The 55–75 GHz low noise amplifier, used between the receiver antenna and the first-stage mixer, significantly improves module sensitivity and suppresses electronics noise. The receiver module has a 20 dB gain improvement compared with the mini-lens approach and better than –75 dBm sensitivity, and its electronics noise temperature has been reduced from 55 000 K down to 11 200 K. Further, the V-band MIR system is developed for co-located multi-field investigation of MHD-scale fluctuations in the pedestal region with W-band electron cyclotron emission imaging on DIII-D tokamak.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
GaN-based W-band receiver chip development for fusion plasma diagnostics
Millimeter-wave diagnostics have proven effective on various magnetic fusion devices worldwide, yet the formidable challenges posed by the harsh environments of future burning plasma devices, characterized by extreme temperatures, pressures, and radiation levels, remain a significant hurdle. To address these challenges, the utilization of wide bandgap Gallium Nitride (GaN)-based millimeter-wave diagnostics is a most promising solution for fusion reactor safety monitoring and control. A noteworthy W-band GaN-based system-on-chip receiver has been the demonstrated by employing HRL T3 40 nm GaN technology. This receiver chip, compactly designed with dimensions of 3 × 5 mm 2 , incorporates essential components such as the 75–110 GHz RF Low-Noise Amplifier (LNA), mixer, Intermediate Frequency (IF) amplifier, and Local Oscillator (LO) chain. This receiver chip will be packaged as a millimeter-wave receiver module and applied on the DIII-D National Fusion Facility, for fusion plasma edge shape monitoring for operational safety and dangerous disruption prediction. The laboratory measurement results have demonstrated suitable performance. Furthermore, this advancement is pivotal for accurate analysis of plasma behavior in the extreme conditions of burning plasma devices, driving progress in fusion research and technology.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
New limit on dark photon kinetic mixing in the 0.2 – 1.2 μ eV mass range from the Dark E-field Radio experiment
We report new limits on the kinetic mixing strength of the dark photon spanning the mass range 0.21 − 1.24 μ eV corresponding to a frequency span of 50–300 MHz. The Dark E-field Radio experiment is a wideband search for dark photon dark matter. In this paper we detail changes in calibration and upgrades since our proof-of-concept pilot run. Our detector employs a wide-bandwidth E-field antenna moved to multiple positions in a shielded room, a low noise amplifier, wideband analog-to-digital converter, followed by a 2 24 -point fast Fourier transform. An optimal filter searches for signals with Q ≈ 10 6 . In nine days of integration, this system is capable of detecting dark photon signals corresponding to a kinetic mixing strength ε several orders of magnitude lower than previous limits. We find a 95% exclusion limit on ε over this mass range between 6 × 10 − 15 and 6 × 10 − 13 , tracking the complex resonant mode structure in the shielded room. Published by the American Physical Society 2024
Astronomy & Astrophysics↗
Broadband, High Efficiency OMT in E-Band
A high-performance, broadband E-Band orthomode transducer (OMT) was designed and fabricated for a dedicated frequency converter. Cross-polarized signals between 71 and 86 GHz, received in a TE 11 mode circular waveguide needed to be split into separate horizontal and vertical polarization channels. The purpose of the OMT is to service the 71–76 and 81–86 GHz licensed communication bands. The main goal of OMT design is maximized transmission across the design bandwidth. Every fraction of a dB lost before the first low noise amplifier is a direct loss in SNR for the overall system. Several different design approaches were simulated, and several OMT’s and ancillary components were built and tested. In the end, practical limitations determined the final path of the completed device. The final product performed several tenths of a dB better than commercially available devices and better than most reported in academic literature. Lessons learned included which construction techniques worked and did not work, as well as what compromises are acceptable.
42 ENGINEERING↗
A 32-Channel Cryo-CMOS ASIC for SNSPD Biasing and Readout with Picosecond
Superconducting nanowire single-photon detectors (SNSPD) are a promising technology for particle detection. Although SNSPDs have demonstrated picosecond timing accuracy, scaling up large arrays has proved challenging. In this work, we introduce a 32-channel cryo-CMOS application-specific integrated circuit (ASIC) that can be tightly integrated with SNSPD arrays. The ASIC is designed to operate at a temperature of 4K and can perform up to 32 simultaneous timing measurements with a root-mean-square (RMS) accuracy of 8.0ps. The ASIC includes on-chip circuitry for externally biasing superconducting devices, low-noise amplifiers for reading superconducting devices, high-resolution time-to-digital converters (TDC) for time-tagging events, and serializers for transmitting data to room-temperature electronics. The ASIC is manufactured in a 22nm FDSOI process and occupies an area of 4.0mm x 1.0mm. The performance of the ASIC was verified using custom cryogenic device models internally developed for the 22nm SOI process. Measurement results will be presented at the conference.
Fredenburg, Jeff↗
Readout Noise of Digital Frequency Multiplexed TES Detectors for CUPID
The superconducting transition-edge sensor (TES) detectors have been the standard in cosmic microwave background (CMB) experiments for almost two decades and are now being adapted for use in nuclear physics, such as neutrinoless double beta decay searches. In this article, we focus on a new high-bandwidth frequency multiplexed TES readout system developed for CUPID, a neutrinoless double beta decay experiment that will replace CUORE. In order to achieve the high energy resolution requirements for CUPID, the readout noise of the system must be kept to a minimum. Low TES operating resistance and long wiring between the readout SQUID and the warm electronics are needed for CUPID, prompting a careful consideration of the design parameters of this application of frequency multiplexing. In this work, we characterize the readout noise of the newly designed frequency multiplexed TES readout system for CUPID and construct a noise model to understand it. Here, we find that current sharing between the SQUID coil impedance and other branches of the circuit, as well as the long output wiring, worsen the readout noise of the system. To meet noise requirements, a SQUID with a low input inductance, high transimpedance, and/or low dynamic impedance is needed, and the wiring capacitance should be kept as small as possible. Alternatively, the option of adding a cryogenic low-noise amplifier at the output of the SQUID should be explored.
CUPID↗
Non-reciprocal acoustoelectric microwave amplifiers with net gain and low noise in continuous operation
Abstract Piezoelectric acoustic devices that are integrated with semiconductors can leverage the acoustoelectric effect, allowing functionalities such as gain and isolation to be achieved in the acoustic domain. This could lead to performance improvements and miniaturization of radio-frequency electronic systems. However, acoustoelectric amplifiers that offer a large acoustic gain with low power consumption and noise figure at microwave frequencies in continuous operation have not yet been developed. Here we report non-reciprocal acoustoelectric amplifiers that are based on a three-layer heterostructure consisting of an indium gallium arsenide (In 0.53 Ga 0.47 As) semiconducting film, a lithium niobate (LiNbO 3 ) piezoelectric film, and a silicon substrate. The heterostructure can continuously generate 28.0 dB of acoustic gain (4.0 dB net radio-frequency gain) for 1 GHz phonons with an acoustic noise figure of 2.8 dB, while dissipating 40.5 mW of d.c. power. We also create a device with an acoustic gain of 37.0 dB (11.3 dB net gain) at 1 GHz with 19.6 mW of d.c. power dissipation and a non-reciprocal transmission of over 55 dB.
42 ENGINEERING↗
Broadband coplanar-waveguide-based impedance-transformed Josephson parametric amplifier
Quantum-limited Josephson parametric amplifiers play a pivotal role in advancing the field of circuit quantum electrodynamics by enabling the fast and high-fidelity measurement of weak microwave signals. Therefore, it is necessary to develop robust parametric amplifiers with low noise, broad bandwidth, and reduced design complexity for microwave detection. However, current broadband parametric amplifiers either have degraded noise performance or rely on complex designs. Here, we present a device based on the broadband impedance-transformed Josephson parametric amplifier that integrates a hornlike coplanar waveguide transmission line, which significantly decreases the design and fabrication complexity while keeping comparable performance. The device shows an instantaneous bandwidth of 700 (200) MHz for 15 (20) dB gain with an average input saturation power of − 110 dBm and near quantum-limited added noise. The operating frequency can be tuned over 1.4 GHz using an external flux bias. We further demonstrate the negligible backaction from our device on a transmon qubit. The amplification performance and simplicity of our device promise its wide adaptation in quantum metrology, quantum communication, and quantum information processing. Published by the American Physical Society 2024
Qing, Bingcheng (ORCID:0000000345227017)↗
Cosmic axions revealed via amplified modulation of the ellipticity of a laser
We propose a new axion dark matter detection strategy that employs optical readout of laser beam ellipticity modulations caused by axion-induced electric fields in a microwave cavity, using electro-optic (EO) crystals, enhanced by externally injected radio-frequency (rf) power. Building upon the variance-based probing method [Phys. Rev. D 107, 103005 (2023).], we extend this concept to the optical domain: A weak probe laser interacts with an EO crystal coupled to the resonant microwave cavity field at cryogenic temperatures, and the axion-induced electric field is revealed through induced ellipticity. The injected rf signal coherently interferes with that of the axion field, amplifying the optical response and significantly improving sensitivity. While our EO-based method employs a Fabry-Pérot resonator, we do not require Michelson interferometers. Our method, hence, enables compact, high-frequency axion searches, across the 0.5–50 GHz range. Operating at cryogenic temperatures not only suppresses thermal backgrounds, but, critically, allows the probing method to mitigate the quantum noise. This approach offers a scalable path forward for axion detection over the ∼(few−200) μeV mass range—covering the preferred parameter space for the postinflationary Peccei-Quinn axion dark matter—using compact, tunable systems.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
QSHS: an axion dark matter resonant search apparatus
We describe a resonant cavity search apparatus for axion dark matter constructed by the quantum sensors for the hidden sector collaboration. The apparatus is configured to search for QCD axion dark matter, though also has the capability to detect axion-like particles, dark photons, and some other forms of wave-like dark matter. Initially, a tuneable cylindrical oxygen-free copper cavity is read out using a low noise microwave amplifier feeding a heterodyne receiver. The cavity is housed in a dilution refrigerator (DF) and threaded by a solenoidal magnetic field, nominally 8 T. The apparatus also houses a magnetic field shield for housing superconducting electronics, and several other fixed-frequency resonators for use in testing and commissioning various prototype quantum electronic devices sensitive at a range of axion masses in the range 2.0–40 μ eV c -2 . The apparatus as currently configured is intended as a test stand for electronics over the relatively wide frequency band attainable with TM 010 the cavity mode used for axion searches. We present performance data for the resonator, DF, and magnet, and plans for the first science run.
Physics - Physics of elementary particles and fiel↗
Multi-channel front-end ASIC for a 3D position-sensitive detector
Arrays of 3D position-sensitive detectors (3DPSD), operating at room temperature and using cadmium zinc telluride (CZT) and thallium bromide (TIBr) sensors, are suitable for gamma-ray spectrometry in many applications. One detector configuration, the 3D position-sensitive Virtual Frisch-Grid detector (VFG), is particularly advantageous for integrating into large area arrays. The signals generated inside each detector of the array are captured with the anode, cathode and four pads that enable the reconstruction of the position and energy of the ionizing interaction by measurements of amplitude and timing of the signals. For these applications, a low-noise front-end ASIC has been developed, capable of processing bipolar signals (needed because of AC-coupling of certain electrodes). The ASIC can be coupled to an ADC in order to form a compound “waveform digitizer” capable of post-processing the analog signals and determining amplitude and timing information. This paper describes a 32-channel front-end ASIC that is suitable for reading out a 3 × 3 or 4 × 4 element matrix in the VFG configuration. Each channel is composed of a low-noise charge amplifier with an adaptive continuous reset feedback circuit suitable for both positive and negative charge, a first order shaper and a single-to-differential converter output stage. Voltage and current references are all internally generated by 10-bit DACs and the chip is fully controllable with the I 2 C communication protocol. The readout channel response has been verified using the implemented injection circuit. Linear behavior up to ~75 ke ± with the gain of ~80 mV/fC, and up to ~200 ke ± with the gain of ~30 mV/fC was demonstrated. In conclusion, the first test result waveforms using a 137 Cs radioactive source on a 5 × 5 × 12 mm 3 TIBr crystal are reported.
47 OTHER INSTRUMENTATION↗
Performance of an X-γ ray detection system based on a thick silicon LGAD
We present the performance of a X-γ ray detection systems based on a 300 µm thick silicon low-gain avalanche diode (LGAD) and of an equivalent Diode structure without the gain layer, read-out by a custom-made low-noise charge amplifier. For the LGAD structure, the multiplication gains M s from 10.2 to 19.3 are measured, and the Equivalent Noise Charge (ENC) components have been studied in detail. As expected, a significant reduction of the white and 1/f voltage series and dielectric ENC components is observed with increasing gain, shortening the optimum peaking time to τ = 0.4÷8 μs depending on the gain value, with respect to the standard diode, while the parallel ENC component increases proportionally to the gain up to M s = 15. Setting the gain M s = 12.7, a minimum ENC = 34.5 electrons r.m.s. (298 eV FWHM) at τ = 1 μs is found. However, the electronic noise, evaluated on the pulser FWHM, is found to only marginally contribute to the width of the spectral lines of a radioactive source, which are dominated instead by the statistical noise of the charge multiplication within the LGAD structure. The spectral lines' excess width is found to be proportional to the signal multiplication gain M s and increases with the energy of the photons. A minimum line width of 850 eV FWHM at 13.9 keV is measured at room temperature, τ = 2 μs and a gain M s = 10.2.
47 OTHER INSTRUMENTATION↗
A 0.2–2 GHz Time-Interleaved Multistage Switched-Capacitor Delay Element Achieving 2.55–448.6 ns Programmable Delay Range and 330 ns/mm 2 Area Efficiency
Simulation of radar returns, full-duplex systems, and signal repeaters require hundreds of ns of programmable broadband radio frequency (RF) delay in the signal path to simulate large distances in the case of radar returns, for signal cancellation in full-duplex, and for isolation from reflections in signal repeaters. However, programmable broadband RF delay has been limited to ones of ns due to challenges in miniaturization with low loss and low power consumption. In this work, we present a 0.2–2 GHz digitally programmable RF delay element based on a time-interleaved multistage switched-capacitor (TIMS-SC) approach. The proposed approach enables hundreds of ns of broadband RF delay by employing sample time expansion in multiple stages of switched-capacitor storage elements. Further, the delay element was implemented in a 45 nm SOI CMOS process and achieves a 2.55–448.6 ns programmable delay range with < 0.12% delay variation across 1.8 GHz of bandwidth at maximum delay, 2.42 ns programmable delay steps, and 330 ns/mm 2 area efficiency. Through the proposed approach, the device shows minimal delay change across a -40 °C to 85 °C temperature range and < 0.25 dB gain variation across delay settings. The device achieves 26 dB gain, 7.4 dB noise figure, and consumes 74 mW from a 1 V supply with an active area of 1.36 mm 2 .
42 ENGINEERING↗