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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

ObstacleSense: Low-Power Neuromorphic Vision for Corridor Obstacle Awareness in Low-Level ADAS

The automotive industry’s pursuit of Level 5 autonomy is constrained by substantial perception-compute power requirements, often reaching 1, 000 + watts in full autonomy stacks. Reducing this energy burden requires rethinking perception not only at the high-end autonomy level, but also at the foundational Advanced Driver Assistance Systems (ADAS) level where low-power, safety-critical sensing can have broad impact. Neuromorphic vision provides a promising starting point: HD Dynamic Vision Sensors (DVS) can operate below 100 mW at the sensor level by reporting only asynchronous brightness changes. However, low-power sensing alone is insufficient if downstream perception reintroduces dense, energy-intensive computation. In particular, many event-driven object-detection pipelines still rely on CNN backbones, while purely spiking alternatives often trade away accuracy or ignore deployment constraints. We introduce ObstacleSense, a highly compact, CNN-free hybrid ANN–SNN framework for Level 0–1 forward-corridor obstacle awareness. Instead of performing full-scene object detection with a convolutional feature backbone, ObstacleSense targets the safety-critical question of whether the ego corridor is occupied and how far the nearest obstacle is. The architecture combines polarity-conditioned event encoding, lightweight temporal spiking dynamics, axial spatial mixing, and coarse-to-fine range estimation within a regular fixed-grid compute pattern. This design avoids the dense CNN backbone commonly used in event-based detection while maintaining a small state footprint suitable for eventual small-FPGA deployment. Before hardware mapping, we evaluate the software implementation using a model-side power proxy derived from MACs, weight and activation traffic, and spiking state updates under shared FP16 assumptions. On simulated CARLA event corpora, the deployment-oriented model achieves 0.9464 objectness F1, 0.9978 grid-level mAP, and 0.8987 m distance Mean Absolute Error at an estimated 1.92 mW proxy cost, while maintaining performance on unseen generalization test sequences.

Johnson-Scott, Zac [ORNL]↗

Characterizing electrical demand and load diversity of low-power water and space heating appliances in US homes

Home renovation and remodeling projects can involve costly and time consuming electrical infrastructure upgrades at the household level. From the grid perspective they also lead to costly replacement of local infrastructure, such as transformers, and can add stress to the grid at peak times. The emergence of innovative, power-efficient household appliances offers a way to minimize these problems. These appliances are designed for lower power consumption, simplifying installation through standard plug-in connections, reducing the need for new electric circuits/panels/service, and minimizing the peak power demand for the home. Key examples include low-power heat pump water heaters (HPWHs) and cold climate window heat pumps that operate on standard 120V outlets. To assess the real-world impact of these solutions, we compiled and analyzed power metering data from several US field studies. This data provides insights into the effects on peak power demand of selecting lower-power appliances. Our analysis focuses on several key metrics, including the maximum power demand of individual appliances, their operational runtime, continuous operation and load diversity. While individual low-power 120V space and water heating appliances offer significant peak demand reductions compared to 240V heat pump or resistance alternatives, their longer runtimes might increase the likelihood of operation during whole-dwelling peak events, albeit at lower power levels.

Less, Brennan↗

A compact, low-power epithermal neutron counter for lunar water detection

The detection and characterization of lunar water are critical for enabling sustainable human and robotic exploration of the Moon. Orbital neutron spectrometers, such as instruments on Lunar Prospector and the Lunar Reconnaissance Orbiter, have revealed hydrogen-rich regions near the poles but are limited by coarse spatial resolution and low counting efficiency. We present a compact, lightweight, and low-power epithermal neutron detector based on boron-coated silicon imagers, designed to probe subsurface hydrogen at decimeter scales from mobile platforms such as lunar rovers. This instrument leverages the high neutron capture cross-section of 10 B to convert epithermal neutrons into detectable α and 7 Li ions in a fully-depleted silicon imager, providing a unique event topology to identify neutrons while suppressing backgrounds. Monte Carlo simulations demonstrate that a 3 μm boron layer achieves optimal neutron detection efficiency, further enhanced with polyethylene moderation to improve sensitivity to the 0.4 eV–500 keV epithermal energy range. For a 10 cm 2 active area, the detector achieves sensitivity to H 2 O weight fractions as low as 0.01 wt% in a 15 minute measurement. This scalable, portable, low-mass design is well-suited for integration into upcoming Artemis and commercial lunar rovers, providing a transformative capability for in-situ resource prospecting and ground-truth validation of orbital measurements.

Detector modelling and simulations I (interaction ↗

Carbon doping in GeTe drives differences in local structure and properties

Advances in low-power, energy-efficient information storage and computing require understanding and controlling the atomic and nanoscale structures of functional materials, such as phase-change materials. Phase-change memory technology enables nonvolatile, low-power memory in devices by storing information through reversible changes in a phase-change material's atomic structure (i.e., transformations between amorphous and crystalline phases) that have corresponding changes in properties, including electronic resistivity and optical reflectivity. Here, we apply complementary X-ray absorption spectroscopy and X-ray pair distribution function analyses to experimentally identify the local- and medium-range atomic structure differences of GeTe and C-doped GeTe thin films. Upon controlled heating, composition- and temperature-dependent atomic structure evolution in GeTe and C-doped GeTe films shows differences in bonding behavior and local structure that directly influence crystallization onset temperature. We find that the introduction of C interrupts Ge–Ge bonds in amorphous GeTe, altering the as-deposited structure to be more similar to the distorted rocksalt structure of crystalline α–GeTe. The change alters the response of the amorphous atomic structure to heating and also lowers the crystallization onset temperature, from 230 °C in GeTe to 220 °C in the C-doped film. The combined insights from both X-ray techniques provide understanding of structural transformations that enables the development and optimization of next-generation memory and computing materials.

36 MATERIALS SCIENCE↗

Optical nanofiber testbeds for benchmarking membrane-waveguide photonic integrated circuit platforms toward on-chip quantum inertial sensing

Recent advances in cold atom interferometry with optical and magnetic atom guides have set the stage for quantum inertial sensors capable of operating in dynamic environments. In this work, we present three key innovations—evanescent-field (EF) atom guides, optical nanofiber testbeds, and membrane-waveguide photonic integrated circuit (PIC) platforms—to advance EF-guided atom interferometry. First, we demonstrate EF atom guides on optical nanofiber testbeds, which serve as performance benchmarks for our membrane-waveguide PIC platforms. Second, we achieve low-power (⁠ ~ 5 mW) guiding of freely moving, laser-cooled 133 Cs atoms in two-color, traveling-wave EF optical dipole traps at the novel, heat-efficient magic wavelengths of 793 and 937 nm (i.e., “793/937-nm EF atom guides”). Concurrently, we design and fabricate membrane-waveguide PIC platforms for these EF atom guides; in our prior work, we showed that these structures safely accommodate 4–6 times the required optical trap power under vacuum and enable dense cold atom generation via magneto-optical trapping in the vicinity of the optical wavguide for efficient loading. Third, we verify preserved atomic coherence via microwave fields and EF-coupled Doppler-free Raman beams; to our knowledge, this is the first report of coherence fringes driven by co-propagating EF-coupled Raman beams with only 150 nW of total optical power. By providing a direct comparison between optical nanofiber testbeds and membrane-waveguide PIC platforms, our results lay critical groundwork for the on-chip realization of EF-guided atom interferometry and the development of fully integrated, compact, lightweight, and low-power quantum accelerometers and gyroscopes.

Orozco, Adrian [Sandia National Laboratories (SNL-↗

The Evolution of Magnetism in a Thin Film Pyrochlore Ferromagnetic Insulator

The pyrochlore vanadates are compelling candidates for next-generation dissipationless devices. Lu 2 V 2 O 7 and Y 2 V 2 O 7 are ferromagnetic insulators (T c ~ 70 K) that are believed to exhibit the magnon Hall effect and are expected to host topological magnons. Their completely dissipationless magnon edge states could be harnessed to realize low-power information transport in spintronic or magnonic devices. As a crucial step in the realization of devices, we synthesize the first thin films of pyrochlore Y 2 V 2 O 7 on isostructural Y 2 V 2 O 7 substrates and explore the evolution of their magnetic properties down to the ultrathin limit. All films are insulating ferromagnets with transition temperatures of up to the bulk value (T c ~ 68 K) that decrease with thickness according to finite-size effects. Our films also exhibit a change in anisotropy from in-plane to out-of-plane easy axis coincident with the development of partial strain relaxation and nonzero magnetic hysteresis in an applied field. Furthermore, this evolution demonstrates the impact of strain on magnetic anisotropy and paves the way to tunable magnon topology.

Anderson, Margaret A. [Harvard University, Cambrid↗

Heteroepitaxial control of thickness, strain, and domain architecture in few-layer ferroelectric tin monochalcogenides

Thin-film epitaxy and epitaxial strain have been widely exploited to tune domain configurations, switching behavior, and ferroic properties in conventional three-dimensional ferroelectric thin films; however, its application to controlling the properties of two-dimensional (2D) ferroelectrics has remained largely unexplored. Here, using SnX (X = Se, S) as a model system, we demonstrate heteroepitaxial control of thickness, strain state, and domain architecture in few-layer ferroelectric SnX via growth on monolayer MoS2 van der Waals (vdW) templates. Compared with conventional growth, MoS2-templated heteroepitaxy promotes epitaxial alignment, yielding ultrathin SnSe films with improved crystalline quality, full areal coverage, and enlarged lateral dimensions. Strong interfacial epitaxial coupling induces pronounced in-plane strain and stabilizes a hierarchical ferroelastic domain architecture, in which long-range 90° stripe domains are further subdivided into nanoscale rotational variants, as revealed by scanning transmission electron microscopy and synchrotron X-ray microscopy. Piezoresponse force microscopy and second-harmonic polarimetry confirm robust in-plane polarization, while ferroelectricity in SnSe is established through polarization-electric field hysteresis and nonvolatile ferroelectric resistive switching with on/off ratios approaching 1000. A nonvolatile, switchable ferroelectric diode effect further evidences direct coupling between polarization and charge transport. Notably, ferroelectric switchability exhibits a strong thickness dependence and is preserved only below ∼10 layers. This vdW heteroepitaxial strategy is further extended to ferroelectric SnS. The seamless heteroepitaxial integration of 2D ferroelectrics with CMOS-compatible, wafer-scale MoS2 templates provides a general and scalable route for strain-enabled structural and ferroelectric engineering in emerging memory and low-power optoelectronic applications.

Wang, Yueyin↗

Electrostatic Gating of Ionic Conductance through Heterogeneous van der Waals Nanopores

Nanofluidic ionic transistors typically require gate voltages above 1 V and operate only at submillimolar ionic strengths, limiting their biocompatible applications. We demonstrate ionic transistors consisting of single sub-10 nm nanopores drilled in van der Waals (vdW) heterostructures with internal gate electrodes made of few-layer graphene. These devices deliver up to 10-fold current modulation at gate voltages as low as 0.3 V in 10 mM KCl, and ∼2-fold modulation at near-physiological 100 mM KCl. Baseline conductance with no gate shows surface-charge-dominated transport below 100 mM KCl, consistent with negatively charged hBN walls and ∼5 nm opening of the pores. The surface charge and the electrochemical asymmetry introduced by the three-electrode configuration govern the device’s behavior: negative gate voltage (V G ) enriches ionic concentrations and enhances current, whereas positive V G induces a local depletion zone that suppresses transport. The current modulation by V G is dependent on the polarity of the transmembrane potential and leads to ion current rectification. Molecular dynamics simulations of a nanopore in a hBN–graphene–hBN stack reveal confinement and surface charge-dependent suppression of the relative permittivity of interfacial water. Continuum modeling with radially varying interfacial water permittivity reproduces the asymmetric I–V characteristics and explains how the embedded gate sculpts local potential and ion concentrations. By enabling sub-0.5 V control of ionic transport at up to 100 mM salt concentrations, these devices address a key need in nanofluidics to create low-power ionic circuits and biosensing.

Materials science↗

Slow-Light Mid-IR Silicon Photonic Chips for NO 2 and CH 4 Gas Detection

A compact, chip-scale mid-infrared gas sensor is demonstrated, leveraging a two-dimensional photonic crystal waveguide (PCW) fabricated on a silicon-on-insulator (SOI) platform. The PCW comprises a hexagonal lattice with lattice constant a = 860 nm and hole radius r = 0.22a, incorporating a central line defect of reduced-radius holes (r s = 0.7r) to induce slow-light propagation near the photonic band edge with a group index of approximately 73, thereby enhancing light-matter interaction. The sensor operates at fundamental absorption wavelengths of 3.42 μm for nitrogen dioxide (NO 2 ) and 3.40 μm for methane (CH 4 ), utilizing the strongest molecular vibrational transitions for maximum sensitivity. Experimental validation was conducted using dynamically diluted gas mixtures generated by mass flow controllers, with signal acquisition performed by a liquid nitrogen-cooled InSb detector. For NO 2 , the sensor exhibited excellent linear response over 5–25 ppm (part per million) with coefficient of determination R 2 = 0.9934, achieving a detection limit of 210 ppb (part per billion)─representing the first reported silicon photonic-based NO 2 detection. For CH 4 , exposure to 25 ppm resulted in a 6.4% decrease in transmitted intensity, demonstrating multigas sensing capability. The CMOS-compatible fabrication process and compact 3 mm device footprint establish this SOI-PCW platform as a scalable, low-power solution for integrated mid-infrared gas sensing, with significant potential for environmental monitoring and industrial safety applications.

Crystals↗

Optoelectronic polymer memristors with dynamic control for power-efficient in-sensor edge computing

Abstract As the demand for edge platforms in artificial intelligence increases, including mobile devices and security applications, the surge in data influx into edge devices often triggers interference and suboptimal decision-making. There is a pressing need for solutions emphasizing low power consumption and cost-effectiveness. In-sensor computing systems employing memristors face challenges in optimizing energy efficiency and streamlining manufacturing due to the necessity for multiple physical processing components. Here, we introduce low-power organic optoelectronic memristors with synergistic optical and mV-level electrical tunable operation for a dynamic “control-on-demand” architecture. Integrating signal sensing, featuring, and processing within the same memristors enables the realization of each in-sensor analogue reservoir computing module, and minimizes circuit integration complexity. The system achieves 97.15% fingerprint recognition accuracy while maintaining a minimal reservoir size and ultra-low energy consumption. Furthermore, we leverage wafer-scale solution techniques and flexible substrates for optimal memristor fabrication. By centralizing core functionalities on the same in-sensor platform, we propose a resilient and adaptable framework for energy-efficient and economical edge computing.

Optics↗

Unconventional magnon-mediated spin torque enabled by ferroelectric domain engineering in multiferroic BiFeO 3

Spin current provides an energy-efficient approach for manipulating magnetization, when its spin polarization aligns with the magnetization direction. However, conventional spin-source materials possess high crystalline symmetry, restricting spin polarization to be orthogonal to both spin and charge current directions. Here, we overcome this limitation by utilizing the concept of magnon-mediated spin-orbit torque through integration of the insulating multiferroic BiFeO 3 with a conventional spin-source material. We observe that spin polarization generated by conventional spin-source material can excite unconventional magnon polarization due to the interplay between cycloidal antiferromagnetic order and the ferroelectric domain structure in BiFeO 3 . This produces an unconventional magnon torque that allows deterministic, field‑free switching of in‑plane magnetization collinear with the current direction, unattainable with conventional spin-source materials. Our results establish multiferroic-based heterostructure as a symmetry‑engineered magnon spin source, paving the way for low-power spintronic devices.

Liang, Yuhan [Tsinghua Univ., Beijing (China); Cor↗

Analog-to-digital converter based on voltage-controlled superconducting devices

The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra-energy-efficient data conversion architectures that remain functional at deep cryogenic temperatures. Here, in this work, we present the first design of a voltage-controlled superconducting flash analog-to-digital converter (ADC) based on a voltage-controlled quantum-enhanced Josephson junction field-effect transistor (JJFET). Exploiting its strong gate tunability and transistor-like behavior, the JJFET offers a scalable alternative to conventional current-controlled superconducting devices while aligning naturally with CMOS-style design methodologies. Building on our previously developed Verilog-A compact model calibrated to experimental data, we design and simulate a three-bit JJFET-based flash ADC targeted for integration within cryogenic control and readout circuitry in quantum computing. The core comparator block is realized through careful bias current selection and augmented with a three-terminal nanocryotron to precisely define reference voltages. Cascaded JJFET comparators ensure robust voltage gain, cascadability, and logic-level restoration across stages. Simulation results demonstrate accurate quantization behavior with ultra-low power dissipation, underscoring the feasibility of voltage-driven superconducting mixed-signal circuits. This work establishes a critical step toward unifying superconducting logic and data conversion, paving the way for scalable cryogenic architectures in quantum–classical co-processors, low-power artificial intelligence accelerators, and next-generation energy-constrained computing platforms.

Analog-to-digital converter↗

Numerical Simulation of a Natural Convection–Driven Air-Cooled Reactor Cavity Cooling System Experiment

Ensuring the efficient removal of decay heat from the reactor vessel is essential for the safety of advanced reactor technologies. Several Generation-IV concepts incorporate variations in the reactor vessel cooling systems to achieve this objective. High-temperature gas-cooled reactors utilize a reactor cavity cooling system (RCCS), a passive ex-vessel system designed to operate without active components or external power during accident conditions. The RCCS removes decay heat primarily through radiative and convective heat transfer mechanisms. Here, this study presents a comprehensive validation of a computational fluid dynamics Reynolds-averaged Navier-Stokes model for the University of Wisconsin-Madison air-cooled RCCS facility. Validation was conducted for both high- and low-power natural convection cases under a uniform heating profile. Near-wall resolution was found to be critical for accurately modeling natural convection in the RCCS; employing an all-𝑦 + wall treatment resulted in wall temperature discrepancies exceeding 50 °⁢𝐶 compared to a wall-resolved mesh. Thermal-hydraulic behaviors under natural and forced convection conditions were compared within the heated cavity and RCCS. A turbulence model sensitivity analysis indicated that low-Reynolds number k-ɛ, k-ω shear stress transport (SST), and Reynolds stress transport models produce similar wall temperature predictions. A buoyancy modeling sensitivity study revealed that the Boussinesq approximation significantly underpredicted thermal-hydraulic behavior in the RCCS. Based on these findings, modeling recommendations are provided. The validated data set along with identified sensitivities refine the modeling of natural convection in the RCCS. The information produced by this study supports RCCS design, optimization, and safety evaluations, enabling the calibration and verification of reduced-order thermal-hydraulic models.

22 - GENERAL STUDIES OF NUCLEAR REACTORS↗

Low power on-chip data transmission for wafer-scale monolithic active pixel sensors

Here, this paper details the implementation of the digital pulse shaping subsystem within the Backbone Transmission Line Encoding (BTLE) driver, a low-power, long-distance on-chip data transmission solution designed in a 65 nm CMOS process. Digital pulse shaping is critical for minimizing inter-symbol interference (ISI) caused by bandwidth limitations of on-chip interconnects, especially in wafer-scale monolithic active pixel sensors (MAPS). A duobinary encoder coupled with a parallelized polyphase finite impulse response (FIR) filter is used for efficient shaping of the transmitted signal spectrum. This reconfigurable architecture achieves reliable 160 Mb/s data transfer over a 10 cm on-chip link, as validated by simulations demonstrating low power consumption (FoM 37.3 fJ/bit/mm of transmission line length) and effective ISI mitigation.

47 OTHER INSTRUMENTATION↗

Cryogenic growth of aluminum: Structural morphology, optical properties, superconductivity, and microwave dielectric loss

We explore the molecular beam epitaxy synthesis of superconducting aluminum thin films grown on c-plane sapphire substrates at cryogenic temperatures of 6 K and compare their behavior with films synthesized at room temperature. We demonstrate that cryogenic growth increases structural disorder, producing crystalline grains that modify the optical, electrical, and superconducting properties of aluminum. We observe that cryogenic deposition changes the color of aluminum from fully reflective to yellow and correlate the pseudodielectric function and reflectance with structural changes in the film. We find that smaller grain sizes enhance the superconductivity of aluminum, increasing its critical temperature and critical field. We then estimate the superconducting gap and coherence length of Cooper pairs in aluminum in the presence of disorder. In conclusion, we fabricate superconducting microwave resonators on these films and find that, independently of the growth temperature, the system is dominated by two-level system loss with similar quality factors in the high- and low-power regimes. We further measure a higher kinetic inductance in the cryogenically grown films.

36 MATERIALS SCIENCE↗

Flying focus with arbitrary directionality for spatiotemporal control of laser intensity

Flying focus techniques produce laser pulses whose focal points travel at arbitrary, controllable velocities. While this flexibility can enhance a broad range of laser-based applications, existing techniques constrain the motion of the focal point to the propagation direction of the pulse. Here, we introduce a flying focus configuration that decouples the motion of the focus from the propagation direction. Here, a chirped laser pulse focused and diffracted by a diffractive lens and grating creates a focal point that can move both along and transverse to the propagation direction. The focal length of the lens, grating period, and chirp can be tuned to control the direction and velocity of the focus. Simulations demonstrate this control for a holographic configuration suited to high-power pulses, in which two off-axis pump beams with different focal lengths encode the equivalent phase of a chromatic lens and grating in a gas or plasma. For low-power pulses, conventional solid-state or adaptive optics can be used instead. Multi-dimensional control over the focal trajectory enables new configurations for applications, including laser wakefield acceleration of ions, nonlinear Thomson scattering, and surface-plasmon emission of THz radiation.

Classical optics↗

CMOS-fabricated ultraviolet light modulator using low-loss alumina piezo-optomechanical photonics

Ultra-violet (UV) and near-UV wavelengths are necessary for many important optical transitions for quantum technologies and various sensing mechanisms for biological and chemical detection. However, all well-known photonic platforms have excessively high losses in the UV, which has prevented photonic integrated circuits (PICs) being used to address these and other important application spaces. Photonic waveguides using low-loss alumina cores and silicon dioxide cladding have emerged as a promising solution because of alumina’s large optical bandgap and the high quality of films enabled by atomic layer deposition. These properties allow passive, low-loss waveguide operation down to at least 266 nm using multimode widths. However, to the best of our knowledge, active alumina PICs have only been realized using thermo-optic tuning, which precludes switching speeds shorter than approximately 100 microseconds, high circuit densities, and cryogenically compatible operation. Here, we introduce a CMOS-fabricated, piezo-optomechanical PIC platform using alumina waveguides and piezoelectric aluminum nitride strain actuators. The platform allows for sub-microsecond switching times, high circuit densities, and cryogenic operation which is desired in many UV PIC applications. We demonstrate a high-performance, reconfigurable optical filter operating at wavelengths as low as 320 nm. The filter has a 6-nanosecond switching time, a loaded linewidth of 3.3 GHz, tuning rate of 28 V/linewidth, and a hold power of less than 20 nW at one linewidth detuning. This work establishes the foundations for a new class of CMOS-fabricated, rapidly reconfigurable, and low-power UV photonic circuits compatible with wavelengths as low as 225 nm.

Castillo, Zachary A. [Sandia National Laboratories↗

Progress Towards RF Conditioning of Low-Loss Couplers for a Conduction-Cooled Cryomodule

This work presents current progress on the conditioning of two new 25 kW couplers optimized for use in a compact, conduction-cooled SRF cryomodule. A connecting waveguide, previously used for conditioning the 805 MHz SNS couplers, was altered for use at 915 MHz. The necessary modifications were determined via RF modeling, while thermal analysis results identified additional cooling requirements during RF conditioning and provided insight about potential higher-power operation. Initial low-power conditioning will be performed with a 2.5 kW solid-state amplifier, with plans to use an industrial magnetron for RF conditioning at 25 kW in the near future.

Stilin, N. [Thomas Jefferson National Accelerator ↗