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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Ampere-Hour Meter For Rechargeable Battery

Low-power analog/digital electronic circuit meters discharge of storage battery in ampere-hours. By metering discharge, one obtains indication of state of charge of battery and avoids unnecessary recharging, maintaining capacity of battery and prolonging life. Because of its small size and low power consumption, useful in such applications as portable video cameras, communication equipment on boats, portable audio equipment, and portable medical equipment.

Tripp, John S.↗

DC Cryogenic Modeling of Open-Source SkyWater 130 nm MOSFETs at 77 K Using BSIM4

Cryogenic applications in high-energy physics (HEP) demand reliable, low-power CMOS electronics capable of operating at liquid nitrogen temperatures (77 K). The open-source SkyWater 130nm (SKY130) CMOS process has previously been shown to operate at temperatures as low as 4 K making it a promising candidate for HEP applications. In this work, we characterize and model SKY130 low-threshold voltage transistors at 77 K, which is a temperature commonly used in modeling applications for liquid argon detectors. DC characteristic measurements were performed at both room temperature and liquid nitrogen temperature. We created a cryogenic modeling approach to produce a SPICE-compatible, isothermal BSIM4-based model for select transistor sizes at 77 K. The resulting model agrees with data at 77 K with an average error on the order of 20% (relative RMS) and shows no dependence on drain voltage. Due to the open-source nature of SKY130, we have made our models publicly available on Github. We hope this work will continue the trend for democratizing circuit design at cryogenic temperatures in high-energy physics by enabling open access to accurate cryogenic CMOS device models at 77 K.

Beall, F. [Texas U., Arlington]↗

Improved Charge Sensing on a SiMOS Double Quantum Dot using a Cryogenic Skipper Readout ASIC (Quandarum)

Major outstanding questions in high-energy physics such as the nature of dark matter and the existence of interactions beyond the standard model require new measurement techniques which are extremely sensitive to minute electromagnetic fields. An array of entangled spin qubits is a promising system for building novel detectors due to its combination of sensitivity and controllability. CMOS-based electron spin qubits, which have demonstrated the operational requirements for fault-tolerant quantum computing [1], offer a particular opportunity due to their compatibility with classical electronics, which allows the leveraging of decades of development of low-noise cryogenic detectors for physics. In this work, we combine a SiMOS double-quantum dot device architecture with a state-of-the-art cryoelectronic readout circuit [2-3] aimed to demonstrate improved charge readout using a single-electron transistor (SET). We identify the design characteristics for an SET that facilitate the use of on-chip classical electronics as a low-power, high-bandwidth first amplification stage and explore opportunities for sensor-readout co-design to minimize noise. This is the first of a series of steps to demonstrate high-fidelity readout of a large array of spin qubit with enough sensitivity to probe processes of interest for the investigation of beyond-standard-model physics.

Quinn, Adam [Fermilab]↗

Investigating Laser Beam Welding as an In-Space Joining Technique via Thermal Vacuum and Microgravity and Vacuum Experiments

In-space joining technologies are crucial for stimulating an in-space economy and for enabling sustained space exploration by in-space manufacturing and repair of metallic structures. Compared to brazing or soldering, in-space welding (ISW) can provide highly hermetic, strong, and complex joints, potentially without introducing additional material. However, the influence of extreme temperatures, reduced pressure, and reduced gravity on ISW is not yet fully elucidated. Several efforts at NASA are investigating laser beam welding (LBW) as a joining and repair method in both thermal vacuum (TVAC) and combined vacuum & reduced gravity environments. NASA Marshall Space Flight Center (MSFC) shepherded several ISW projects in its past, including the 1973 electron beam welding on Skylab, the 1989 low-power LBW on parabolic flights, and the unflown 1990s-era In-Space Welding Experiment. Recent parabolic flights and 3 degree-of-freedom ground testing build upon this heritage. A collaboration with the Ohio State University using NASA Langley Research Center (LaRC) hardware retrofitted for LBW achieved the first high-powered laser welds under vacuum and low gravity and developed a workforce capable developing such experimental hardware. A ground testing campaign at the MSFC Flat Floor simulated fit-up and welding representative of ISW in 3 degrees of freedom to emulate microgravity effects on inertial systems. One ongoing effort is a NASA Early Career Initiative project – Lunar Assembly and Servicing by Autonomous Robotics (LASAR). Ruggedized LBW components were developed by an external partner for use in TVAC. A TVAC-rated robotic arm was procured by MSFC and used in the first known robotic laser weld where all components save the laser generator were under vacuum. NASA Johnson Space Center (JSC) is advancing supervised autonomy of ISW. NASA LaRC continues to adapt their unique snowflake joint geometry, suitable for connecting segments in trusses and other structures, to LBW. Upcoming TVAC campaigns will focus on testing extreme temperatures, proving out autonomous operations, and demonstrating weld repair. Weld inspection will occur via a non-contact nondestructive evaluation (NDE) technique – electromagnetic acoustic transduction (EMAT). Another ongoing effort based at MSFC is the DISCMAN -- DIsk-Shaped Configurable and Modular vAcuum uNit – which seeks to development a compact, modular payload that can provide a vacuum environment while in a reduced gravity condition. This payload could support multiple in-space manufacturing developmental efforts, with the first demonstration technology being LBW. Currently, the design is targeting operations in the pressurized volume of a space station, but the payload could readily be adapted to other flight platforms such as parabolic or even suborbital vehicles. LASAR elucidates the effects of temperature and vacuum on LBW while DISCMAN probes those of vacuum and gravity. Through these complementary efforts, NASA is addressing the primary challenges of ISW across the space environment while simultaneously developing and maturing technologies including robotic systems and inspection methodologies for future practical implementation on the Moon and beyond. This approach is timely, as upcoming missions requiring sustained human presence in space will depend on reliable ISW capabilities to create robust metallic joints currently unproven in the space environment and to perform repairs in situ .

hypogravity↗

Unconventional Superlattice Ordering in Intercalated Transition Metal Dichalcogenide V1/3NbS2

The interplay between symmetry and topology in magnetic materials makes it possible to engineer exotic phases and technologically useful properties. A key requirement for these pursuits is achieving control over local crystallographic and magnetic structure, usually through sample morphology (such as synthesis of bulk crystals versus thin films) and application of magnetic or electric fields. Here we show that V1/3NbS2 can be crystallized in two ordered superlattices, distinguished by the periodicity of out-of-plane magnetic intercalants. Whereas one of these structures is metallic and displays the hallmarks of altermagnetism, the other superlattice, which has not been isolated before in this family of intercalation compounds, is a semimetallic noncollinear antiferromagnet that may enable access to topologically nontrivial properties. This observation of an unconventional superlattice structure establishes a powerful route for tailoring the tremendous array of magnetic and electronic behaviors hosted in related materials and may expand their use in low-power spintronic or topological quantum devices.

Fender, Shannon S↗

Dielectric Resonator Design for Low Power and Low Temperature Microwave Plasma

Waveguide-based microwave plasmas generally operate at high temperatures (2000 - 6000K)[1], making it difficult to directly interface solid materials with the plasma without significant thermal damage. Dielectric microwave resonators (DMRs), long studied for wave-based manipulation of electromagnetic radiation for telecom and optics, can focus radiation to extremely small mode volumes, creating intense localized fields with low-power input.[2] This phenomenon can be used for applications ranging from efficient plasma electronics to near-ambient plasma-materials interactions. Such DMR-based plasmas have been demonstrated a handful of times in the literature, but the majority of research towards this utilize the lowest frequency resonance mode.[3], [4], [5] By carefully controlling the geometry of cylindrical resonators, a variety of electromagnetic modes can be excited. In this work, COMSOL Multiphysics simulations are used to study the electric field enhancement and absorption properties of CaTiO3 DMRs as a function of geometry and excitation frequency. Whereas previous studies have utilized the HEM111 resonance frequency to drive low power plasma excitation, we find that higher order resonance frequencies are more effective at field enhancement and result in less power loss within the dielectric material, hence less wasted heating. The effectiveness of these modes is also geometry dependent and can be computationally optimized for plasma generation. Complementing these computational efforts, we demonstrate a new closed-system reactor design built in a WR-650 waveguide and experimentally demonstrate the formation of atmospheric argon microwave plasma using < 30 W input power on DMR dimers. We observe a shifting resonance frequency as the DMRs heat in response to microwave excitation and develop a Python-based lock-in mechanism to effectively track the DMR resonance over time, leading to stable plasma operation. We use infrared thermal imaging to monitor the temperature of the DMR dimers and surrounding quartz chamber, demonstrating thermal temperatures < 60 degreesC. Finally, we utilize optical emission spectroscopy (OES) to probe the plasma properties as a function of the resonance mode.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Orbital Engineering Band Degeneracy in a Dual-Square Carbon-Oxide Framework

Electron band degeneracies in momentum space give rise to exotic quantum phenomena that have sparked intense interest in condensed matter physics and materials science. Nodal-lines─isolines in k-space formed by the incidental touching of two bands that share the same energy but belong to discrete eigenstates─arise in the presence of symmetries that preclude effective hybridization. Despite recent advances in the design, bottom-up assembly, and engineering of exotic electronic states in graphene nanomaterials, the extension of this approach to access synthetic two-dimensional (2D) quantum materials derived from metal- or covalent-organic frameworks (COFs) has lagged behind. Here we present a molecular orbital engineering approach for designing and fabricating an edge-centered dual square lattice within a π-conjugated 2D-tetraoxa[8]circulene (2D-TOC) COF. First-principles calculations and scanning tunnelling spectroscopy reveal the emergence of Frontier states at the center of a 3 × 3 lattice that give rise to Dirac nodal-lines in 2D-TOC. Our findings not only provide a general guide for the design of conjugated COFs with custom tailored electronic properties from molecular fragments but enable the exploration of emergent topological phenomena in synthetic 2D materials with potential application for high-speed, low-power data processing, transmission, and storage.

Dirac nodal line semimetal↗

A Sub-electron-noise Skipper-CCD Readout ASIC with Improved Channel-to-channel Isolation and an Integrated Cryogenic Voltage Reference

The MIDNA application specific integrated circuits (ASICs) are a series of skipper-CCD readout chips fabricated in a 65 nm low-power CMOS process that implement a correlated double sampling signal processing chain based on dual-slope integrators. They are capable of working from room to cryogenic temperatures, down to 84 K. The present iteration of the ASIC has been fabricated including several design updates and the addition of an on-chip voltage reference, resulting in improved performance. This work presents the main vulnerabilities solved, the changes carried out, and the resulting performance benefits. Measurements with a skipper-CCD and the ASIC at 140 K showed that the single-electron resolution can be reached by averaging the measured charge in the analog domain using the analog pile-up technique with a readout noise as low as 0.11 erms of equivalent charge for 1200 samples. The channel-to-channel crosstalk was also characterized showing values better than -62 dB.

Alcalde Bessia, Fabricio↗

A Sub-electron-noise Skipper-CCD Readout ASIC with Improved Channel-to-channel Isolation and an Integrated Cryogenic Voltage Reference

The MIDNA application specific integrated circuits (ASICs) are a series of skipper-CCD readout chips fabricated in a 65 nm low-power CMOS process that implement a correlated double sampling signal processing chain based on dual-slope integrators. They are capable of working from room to cryogenic temperatures, down to 84 K. The present iteration of the ASIC has been fabricated including several design updates and the addition of an on-chip voltage reference, resulting in improved performance. This work presents the main vulnerabilities solved, the changes carried out, and the resulting performance benefits. Measurements with a skipper-CCD and the ASIC at 140 K showed that the single-electron resolution can be reached by averaging the measured charge in the analog domain using the analog pile-up technique with a readout noise as low as 0.11 erms of equivalent charge for 1200 samples. The channel-to-channel crosstalk was also characterized showing values better than -62 dB.

Alcalde Bessia, Fabricio↗

Carbon doping in GeTe drives differences in local structure and properties

Advances in low-power, energy-efficient information storage and computing require understanding and controlling the atomic and nanoscale structures of functional materials, such as phase-change materials. Phase-change memory technology enables nonvolatile, low-power memory in devices by storing information through reversible changes in a phase-change material's atomic structure (i.e., transformations between amorphous and crystalline phases) that have corresponding changes in properties, including electronic resistivity and optical reflectivity. Here, we apply complementary X-ray absorption spectroscopy and X-ray pair distribution function analyses to experimentally identify the local- and medium-range atomic structure differences of GeTe and C-doped GeTe thin films. Upon controlled heating, composition- and temperature-dependent atomic structure evolution in GeTe and C-doped GeTe films shows differences in bonding behavior and local structure that directly influence crystallization onset temperature. We find that the introduction of C interrupts Ge–Ge bonds in amorphous GeTe, altering the as-deposited structure to be more similar to the distorted rocksalt structure of crystalline α–GeTe. The change alters the response of the amorphous atomic structure to heating and also lowers the crystallization onset temperature, from 230 °C in GeTe to 220 °C in the C-doped film. The combined insights from both X-ray techniques provide understanding of structural transformations that enables the development and optimization of next-generation memory and computing materials.

36 MATERIALS SCIENCE↗

Raman Laser-Induced Structural Modification in CVD-Grown Monolayer MoS 2 for Multi-Purposed Nanofabrication

Molybdenum disulfide (MoS 2 ) has been extensively explored to be utilized as an electronic material in a variety of device applications. In particular, the tunability of MoS 2 enhances its electrical properties making it an intriguing candidate for field-effect transistors (FETs), while also extending beyond electrical properties to structural phase engineering. Laser-induced modifications, particularly with Raman lasers, offer a straightforward method to modulate materials via thermal processes with precise patterning control and energy-level flexibility. However, most studies on the modification of MoS 2 have focused on multilayered structures or have been conducted under low-power laser conditions, leaving the feasibility of structural modifications in monolayer MoS 2 elusive. In this study, we fundamentally elucidated the effects of high-power Raman laser irradiation on the surface of chemical vapor deposition (CVD)-grown monolayer MoS 2 under ambient conditions and uncovered the underlying mechanisms of laser-induced modifications by applying intense photon energy with highly interactive reactions. Our results revealed both etching and deposition phenomena in two discernible regions, and it can be demonstrated by intensity regimes based on the spatial distribution of laser irradiance within the laser-irradiated spot. Furthermore, phase transition was found to be inhibited due to the promoted oxidation and the deposition of hydrogenated amorphous carbon (a-C:H), and p-type doping was observed, likely occurring in the region beneath the a-C:H deposition as substitutional doping on the 2H phase of MoS 2 . To compare the thermal effects, MoS 2 modifications were further analyzed using simplified heat transfer estimations. In conclusion, these findings deepen our understanding of how Raman laser irradiation modifies MoS 2 under ambient conditions, providing guidelines for optimizing its modification processes.

36 MATERIALS SCIENCE↗

Dynamic signatures of spin-lattice coupling in the layered ferrimagnet Mn 3 Si 2 Te 6

Magnetic van der Waals (vdW) materials exhibit a profound interconnectedness between their various degrees of freedom, pointing to a wealth of potential applications in low-power and high-speed spintronic devices. Recently, light-matter interactions have been leveraged as robust, dynamic pathways to gain control over the properties of vdW magnets through the use of ultrafast pulses of light. Here, we utilize ultrafast photoexcitation to drive coherent lattice oscillations in the layered ferrimagnetic crystal Mn 3 Si 2 Te 6 , which significantly stiffen below the magnetic ordering temperature. We suggest that this is due to an exchange-mediated contraction of the lattice, stemming from strong magneto-structural coupling in this material. Furthermore, simulations of the transient incoherent response uncover the critical role of the spin-mediated electronic relaxation pathways. These results underscore the importance of spin-lattice coupling in vdW magnets and demonstrate a promising strategy for their dynamic optical control via their entangled degrees of freedom.

36 MATERIALS SCIENCE↗

Heteroepitaxial control of thickness, strain, and domain architecture in few-layer ferroelectric tin monochalcogenides

Thin-film epitaxy and epitaxial strain have been widely exploited to tune domain configurations, switching behavior, and ferroic properties in conventional three-dimensional ferroelectric thin films; however, its application to controlling the properties of two-dimensional (2D) ferroelectrics has remained largely unexplored. Here, using SnX (X = Se, S) as a model system, we demonstrate heteroepitaxial control of thickness, strain state, and domain architecture in few-layer ferroelectric SnX via growth on monolayer MoS2 van der Waals (vdW) templates. Compared with conventional growth, MoS2-templated heteroepitaxy promotes epitaxial alignment, yielding ultrathin SnSe films with improved crystalline quality, full areal coverage, and enlarged lateral dimensions. Strong interfacial epitaxial coupling induces pronounced in-plane strain and stabilizes a hierarchical ferroelastic domain architecture, in which long-range 90° stripe domains are further subdivided into nanoscale rotational variants, as revealed by scanning transmission electron microscopy and synchrotron X-ray microscopy. Piezoresponse force microscopy and second-harmonic polarimetry confirm robust in-plane polarization, while ferroelectricity in SnSe is established through polarization-electric field hysteresis and nonvolatile ferroelectric resistive switching with on/off ratios approaching 1000. A nonvolatile, switchable ferroelectric diode effect further evidences direct coupling between polarization and charge transport. Notably, ferroelectric switchability exhibits a strong thickness dependence and is preserved only below ∼10 layers. This vdW heteroepitaxial strategy is further extended to ferroelectric SnS. The seamless heteroepitaxial integration of 2D ferroelectrics with CMOS-compatible, wafer-scale MoS2 templates provides a general and scalable route for strain-enabled structural and ferroelectric engineering in emerging memory and low-power optoelectronic applications.

Wang, Yueyin↗

Memsensing by surface ion migration within Debye length

Integration between electronics and biology is often facilitated by iontronics, where ion migration in aqueous media governs sensing and memory. However, the Debye screening effect limits electric fields to the Debye length, the distance over which mobile ions screen electrostatic interactions, necessitating external voltages that constrain the operation speed and device design. Here we report a high-speed in-memory sensor based on vanadium dioxide (VO2) that operates without an external voltage by leveraging built-in electric fields within the Debye length. When VO2 contacts a low-work-function metal (for example, indium) in a salt solution, electrochemical reactions generate indium ions that migrate into the VO2 surface under the native electric field, inducing a surface insulator-to-metal phase transition of VO2. The VO2 conductance increase rate reflects the salt concentration, enabling in-memory sensing, or memsensing of the solution. The memsensor mimics Caenorhabditis elegans chemosensory plasticity to guide a miniature boat for adaptive chemotaxis, illustrating low-power aquatic neurorobotics with fewer memory units.

Guo, Ruihan↗

Analog-to-digital converter based on voltage-controlled superconducting devices

The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra-energy-efficient data conversion architectures that remain functional at deep cryogenic temperatures. Here, in this work, we present the first design of a voltage-controlled superconducting flash analog-to-digital converter (ADC) based on a voltage-controlled quantum-enhanced Josephson junction field-effect transistor (JJFET). Exploiting its strong gate tunability and transistor-like behavior, the JJFET offers a scalable alternative to conventional current-controlled superconducting devices while aligning naturally with CMOS-style design methodologies. Building on our previously developed Verilog-A compact model calibrated to experimental data, we design and simulate a three-bit JJFET-based flash ADC targeted for integration within cryogenic control and readout circuitry in quantum computing. The core comparator block is realized through careful bias current selection and augmented with a three-terminal nanocryotron to precisely define reference voltages. Cascaded JJFET comparators ensure robust voltage gain, cascadability, and logic-level restoration across stages. Simulation results demonstrate accurate quantization behavior with ultra-low power dissipation, underscoring the feasibility of voltage-driven superconducting mixed-signal circuits. This work establishes a critical step toward unifying superconducting logic and data conversion, paving the way for scalable cryogenic architectures in quantum–classical co-processors, low-power artificial intelligence accelerators, and next-generation energy-constrained computing platforms.

Analog-to-digital converter↗

An integer- N frequency synthesizer for flexible on-chip clock generation

A low-power integer-N frequency synthesizer for flexible on-chip clock generation has been designed in a 65 nm CMOS process. The circuit can be programmed to generate two independent low-jitter clocks between 30 MHz and 3 GHz that are locked to a 10–50 MHz reference input. The design uses a phase-locked loop (PLL) with a dual-tuned LC voltage-controlled oscillator (VCO), programmable feedback divider, and dual output dividers. The total power consumption from 1.2 V and 0.8 V supplies is 4.0 mW. In conclusion, experimental results confirm the functionality of the proposed synthesizer over a wide range of output frequencies.

47 OTHER INSTRUMENTATION↗

Low power on-chip data transmission for wafer-scale monolithic active pixel sensors

Here, this paper details the implementation of the digital pulse shaping subsystem within the Backbone Transmission Line Encoding (BTLE) driver, a low-power, long-distance on-chip data transmission solution designed in a 65 nm CMOS process. Digital pulse shaping is critical for minimizing inter-symbol interference (ISI) caused by bandwidth limitations of on-chip interconnects, especially in wafer-scale monolithic active pixel sensors (MAPS). A duobinary encoder coupled with a parallelized polyphase finite impulse response (FIR) filter is used for efficient shaping of the transmitted signal spectrum. This reconfigurable architecture achieves reliable 160 Mb/s data transfer over a 10 cm on-chip link, as validated by simulations demonstrating low power consumption (FoM 37.3 fJ/bit/mm of transmission line length) and effective ISI mitigation.

47 OTHER INSTRUMENTATION↗

Innovating Distributed Embedded Energy Prize (InDEEP): A Lessons Learned Report

The U.S. Department of Energy's Water Power Technologies Office (WPTO) launched the Innovating Distributed Embedded Energy Prize (InDEEP) in March 2023 to accelerate innovation in Distributed Embedded Energy Conversion Technologies (DEEC-Tec) for ocean wave energy. Administered by the National Laboratory of the Rockies (NLR) with technical support from Sandia National Laboratories (SNL), InDEEP focused on the development of small, distributed, and embeddable energy converters (DEECs) and their integration into scalable DEEC-Tec metamaterials for marine renewable energy applications. Spanning three phases over two years, InDEEP awarded approximately $2.3 million to teams from academia, industry, and startups. Phase I emphasized conceptual design. Phase II moved into the prototyping of individual DEECs. Phase III required integration into functional DEEC-Tec metamaterial prototypes. Across 60 submissions, teams explored a wide range of energy conversion mechanisms - including piezoelectric, variable-capacitance, ionic, and inductive methods. Note, the prize did not include the design nor demonstration of ocean wave energy conversion systems. Rather, the prize only required participants to design and demonstrate individual DEECs and corresponding DEEC-Tec metamaterials. This prize utilized a mix of novel and proven techniques to attract participants from outside marine energy, including an engagement leaderboard, robust recruitment, technical expert mentorship, and a suite of technical trainings. Key insights from the competition emphasized that DEEC-Tec metamaterials must be intentionally designed to produce beneficial emergent behaviors - advantages that go beyond simply combining multiple DEEC units. Top-performing teams showed that thoughtful design of system architecture, coordinated deformation, and systems adaptabilities could unlock meaningful performance gains both at the DEEC system level and DEEC-Tec metamaterial system level. A critical realization was that many DEEC-Tec metamaterials could benefit from being designed to accept lower-frequency energy inputs and shift those into higher-frequencies per each DEEC making up the respective DEEC-Tec metamaterial. Other important takeaways included the need for rigorous and quantitative performance testing, effective integration of power conditioning electronics, and the pivotal role of material science in enabling innovative, adaptive DEEC-Tec-based energy conversion designs. InDEEP also helped establish a growing DEEC-Tec community of practitioners, attracting participants from beyond traditional marine energy sectors. Through a strong support infrastructure, InDEEP fostered early-stage innovation and laid a foundation for future DEEC-Tec-based ocean wave energy conversion solutions - positioning DEEC-Tec as a promising pathway toward scalable, resilient ocean wave energy conversion. Through focused R&D of individual DEECs and their integration into DEEC-Tec metamaterials, alongside a growing, multidisciplinary community catalyzed by InDEEP, there is a strong opportunity to drive a disruptive shift in ocean wave energy conversion design and development. This convergence of novel architectures, emergent behaviors, and collaborative innovation positions DEEC-Tec as a transformative approach, moving the field from rigid, centralized energy conversion-based designs to resilient, modular systems highly adaptable for real-world ocean wave energy conversion applications.

16 TIDAL AND WAVE POWER↗