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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

How non-ohmic contact-layer diodes in perovskite pinholes affect abrupt low-voltage reverse-bias breakdown and destruction of solar cells

Perovskite solar cells (PSCs) rapidly degrade under reverse bias, a condition that may occur during partial shading. Here, in this study, we use electrical measurements, electron microscopy, and optical and thermal imaging to investigate abrupt breakdown and hotspotting under low reverse potentials (<|-2| V). We show that microscopic pinholes in the perovskite layer cause rapid, destructive breakdown under reverse bias despite minimally reducing power conversion efficiencies. Measurements on miniature (200-micrometer diameter) PSCs and perovskite-free transport-layer diodes indicate that abrupt, low-voltage breakdown occurs in nanoscale to micrometer-scale defects and that metal migration and filamentation are unlikely causes. Reverse-bias stability substantially improves when pinholes in the perovskite and transport layers are eliminated. Atomic layer deposition of tin oxide prevents abrupt breakdown by ensuring physical separation between electrodes-not by blocking metal ion migration. Perovskite researchers should adopt cleaner, more uniform deposition techniques to enable robust PSCs for further research and commercial applications.

14 SOLAR ENERGY↗
DOE OSTI2025

Sensitivity-based voltage constraints for optimal power flow in low-voltage distribution feeders

The optimal power flow (OPF) problem for distribution systems can include network details down to the low-voltage (LV) points of interconnection of individual customers. This paper addresses the implementation of voltage magnitude constraints, and sets forth a practicable approach for capturing the effects on voltage from the switching behavior of loads (e.g., heat pumps, air conditioners, water heaters, or pool pumps) and from the variability of renewable generation (e.g., rooftop solar). The proposed method adjusts the OPF voltage constraints based on forecasts of load and generation upper and lower bounds, in conjunction with sensitivity factors derived from the power flow equations. An illustrative OPF formulation is also provided, which incorporates transformer models that include core loss. We demonstrate that accurate modeling of these LV network components is critical to avoid voltage violations at customer points of interconnection. Furthermore, the ideas are validated through numerical case studies on a realistic distribution feeder.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2026

Low-voltage syngas synthesis via BPM electrolysis of CO 2 capture and aldehyde solution

A bipolar membrane electrolyzer coupling bicarbonate electrolysis with formaldehyde oxidation directly produces syngas (H 2 : CO = 1) at 1.7 V and 200 mA cm −2 with 200% combined Faradaic efficiency. We demonstrate an electrochemical syngas production platform that couples bicarbonate electrolysis with formaldehyde oxidation in a bipolar membrane electrode assembly. This strategy doubles syngas (CO + H 2 ) throughput compared to conventional CO 2 electrolysis by generating CO at the cathode and H 2 at the anode. The system achieves a full-cell voltage of 1.7 V while operating at an industrially relevant current density of 200 mA cm −2 . The system maintained a combined Faradaic efficiency of 200% over 8 hours. The process produces syngas with a 1 : 1 H 2 : CO ratio, aligning with downstream requirements for Fischer–Tropsch synthesis. We further investigated how Cu anode active sites and electrolyte composition affect formaldehyde oxidation activity. Our integrated electrolytic system reduces levelized energy by 45–61% relative to conventional electrochemical syngas production platforms.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Investigating the Performance of SF6 Replacement Gases to Enable the Next Generation of Pulsed Power

High voltage switches are essential components in pulsed power systems, where consistent and reliable performance is crucial—particularly as the field explores alternatives to SF 6 as an insulating gas. This project examines the self-break voltage distributions of various gases, with a focus on the low-voltage discharges observed in the lower tail of these distributions. Experimental results revealed that the specific housing design influenced the self-break behavior. Among the tested gases, air demonstrated a more favorable overall distribution compared to SF 6 , albeit requiring higher operating pressures. However, air also exhibited a greater likelihood of extremely low-voltage dropouts, raising concerns about its suitability as a direct replacement for SF 6 . Notably, all gases tested showed a higher-than-expected probability of low-voltage events when considering the tail of the distribution rather than the bulk behavior.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Tunable 3D Aerosol Jet Printing of Low‐Power Redox‐Gated Transistors with Multicomponent Inks

Printed hybrid electronics (PHE) offer a promising alternative for microelectronics fabrication, addressing some limitations of traditional subtractive manufacturing. Despite the versatility of PHE, particularly in the customization of printing inks, these devices have not yet matched the performance of silicon-based electronics due to challenges in gating mechanisms and operational stability. However, the potential of low-voltage redox-gating to achieve significant carrier modulations in correlated metal oxides remains unexplored in PHE. This study systematically investigates vanadium dioxide (VO 2 ) nanoparticles and redox inks, linking their organization in solution to their morphology, phase state, and properties in solid films and multilayered structures. Using an aerosol jet printer (AJP), a solid-state VO 2 transistor is fabricated, operating at just 0.4 V gating voltage. The printed VO 2 films demonstrate redox-modulated conductivity and consistent transistor behavior. The solid-state redox gating materials also provide long-term stability, with the device maintaining performance over 6000 cycles without degradation. These results highlight the potential of redox gating to enhance the application of functional nanoparticles in printed hybrid microelectronics, especially for flexible, low-voltage, and energy-efficient devices.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Insights into Native Single-Atom Electrocatalyst Site Structures

Single-atom electrocatalysts consisting of metal atoms embedded in a carbon matrix are promising next-generation catalysts for green hydrogen production and utilization, CO2 reduction, low-temperature CO oxidation, ammonia production, plastic decomposition, and electrochemical energy storage. The origins of activity and stability for the single-atom sites are still debatable, however, because of constrained insights into their local structure resulting from idealized models and experiments derived from a large number of individual sites. Insights into structural variations around single atomic sites are therefore critical for the continued development of these next-generation catalysts. While electron microscopy commonly provides atomic-scale information about these materials, the beam sensitivity of individual sites makes structural determination by conventional low-voltage (60 keV) techniques challenging. Here, we introduce ultralow-voltage electron ptychography, performed at 30 keV, that enables determination of the lattice structure around individual metal sites in a well-defined single-atom electrocatalyst system while essentially eliminating knock-on structural modifications. Pairing these atomic-scale, site-specific measurements with computational methods will broaden our understanding of the activity and stability of these materials, which will accelerate the development of the next generation of catalysts.

Zachman, Michael [ORNL] (ORCID:0000000319101357)↗
DOE OSTI2026

From Filamentary Failure to Durable Halide Perovskite Memristors

Halide perovskites have emerged as promising materials for memristive devices. While their pronounced electrochemical reactivity and fast ionic mobility enable numerous advantages including low-voltage operation and fast switching, the same features also render perovskite-based memristors vulnerable to metallic shunts and poor endurance, limiting their practical applications. Here, we elucidate both the resistive switching and failure mechanisms in perovskite memristors with a fluorine-doped tin oxide (FTO)/methylammonium lead triiodide (MAPbI3)/Ag structure and demonstrate a strategy to substantially enhance device durability. As opposed to commonly invoked filamentary mechanisms, electrical, structural, and spectroscopic analyses reveal that resistive switching arises from interfacial barrier modulation by reversible Ag redox reactions that drive electrochemical doping/dedoping within the perovskite. Device failure, however, originates from metallic Ag0 filamentation that ultimately forms permanent conductive pathways. Introducing an ultrathin Al2O3 interlayer at the inert-electrode interface improves device endurance by more than 30-fold, exceeding 15,000 switching cycles, without compromising other performance metrics. Interfacial characterization indicates that the Al2O3 layer modifies wettability of Ag deposits, promoting planar island growth rather than through-film filamentation. These findings establish a clear link between interfacial electrochemistry, metal precipitation behavior, and memristor reliability, highlighting inert-electrode interfacial engineering as an effective pathway toward durable perovskite-based memristors.

14 SOLAR ENERGY↗
DOE OSTI2025

Thickness scaling and ferroelectric switching in wurtzite structure zinc magnesium oxide thin films

This study reports the thickness scaling of sputtered ferroelectric Zn 0.61 Mg 0.39 O (ZMO) thin films down to 43 nm. Encapsulated IrO 2 /ZMO/Ir capacitors exhibited switchable polarizations exceeding 50 μC cm −2 and coercive fields that increased from 3.9 to 4.4 MV cm −1 as the thickness decreased. Switching kinetics are best described by the simultaneous non-linear nucleation and the growth model. Bimodal switching is prevalent at low thicknesses, with the fastest switching times measured to be approximately 400 ns. Device encapsulation made ZMO switching kinetics more abrupt, potentially due to changes in the concentration of atmosphere-induced defects such as hydroxides. These results demonstrate stable ferroelectricity and sub-microsecond switching in sub-50 nm wurtzite ZMO, highlighting its potential as a low-voltage ferroelectric for integrated nonvolatile memory applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Next-generation tunnel FETs: exploring material perspectives and areal tunneling configurations

The end of Dennard scaling, which facilitated proportional increases in computing power without added energy costs until the mid-2000s, has underscored the urgent need for innovative semiconductor devices that can enhance energy efficiency. Tunnel field-effect transistors (TFETs) have emerged as promising candidates to surpass the energy efficiency of conventional metal oxide semiconductor field-effect transistors (MOSFETs). Unlike MOSFETs, which rely on thermionic emission to overcome the source-channel potential barrier, TFETs operate through quantum tunneling, potentially enabling sub-60 mV dec −1 subthreshold swing (SS) for low-voltage operation. However, lateral TFETs have faced challenges in achieving adequate on-state current (I ON ) and a broad SS operation window, limiting their practical utility. This review article advocates for areal TFETs, which utilize face-to-face tunnel junctions that ideally offer step-function current turn-on characteristics and allow I ON to scale with device area rather than width. We highlight recent advancements in integrating 2D materials into tunneling structures, which could facilitate efficient band-to-band tunneling through atomically thin layers, while addressing challenges of gate field screening. We then discuss the nearer-term prospects of epitaxial areal TFETs comprising III–V compound semiconductors and group-IV semiconductors based on recent experimental progress. The review examines both quantum mechanical and semiclassical modeling approaches for TFETs, including techniques to reduce the computational complexity. The article delves into ongoing challenges in material synthesis, interface engineering, device fabrication, and integration pathways, concluding with recommendations for future research directions to overcome the fundamental power density limitations of conventional transistor technology.

2D materials↗
DOE OSTI2026

Submodule-Level Decentralized Control for Cascaded Quadruple Active Bridge-Based Medium-Voltage Converters

High-power, low-voltage DC (LVDC) loads, such as AI data centers, electric vehicle fast-charging hubs, and hydrogen electrolyzers, are accelerating the deployment of solid-state transformers (SSTs) that directly interface medium-voltage AC (MVAC) to LVDC, streamlining power delivery. This paper proposes a submodule-level decentralized control strategy for an SST comprising a cascaded H-bridge (CHB) active rectifier on the MVAC side and per-module quadruple-active-bridge (QAB) converters on the LVDC side with local controllers. The proposed strategy eliminates the need for high-fidelity, real-time cross-isolation communication by synchronizing all active bridges to a common heartbeat signal and enabling the primary- and secondary-side controllers to generate independent local control signals (phase shifts). The resultant phase shifts naturally govern average and double-line frequency power transfer between active bridges, enabling each side to meet its control objectives using only local measurements. Detailed controller design considerations are presented based on a stability analysis. Comprehensive electromagnetic-transient simulations demonstrate tight DC-link voltage regulation, high-quality grid currents, and robust operation under load transients and grid disturbances, without real-time communication among the submodule controllers. These results indicate that the proposed scheme can significantly enhance the reliability, scalability, and flexibility of cascaded bridge-based medium-voltage converters.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2026

A Novel Low-Profile High-Efficiency Three-Phase Matrix Transformer

High step-down isolated DC-DC conversion from an 800 V DC bus to low-voltage, high-current outputs is required in automotive auxiliary converters and data center power supplies. In such applications, conventional transformer-based converters require large turns ratios, which increase winding resistance, leakage inductance, and magnetic height. This paper proposes a novel low-profile three-phase matrix transformer that realizes a large effective voltage ratio through flux division among multiple secondary legs, without increasing the physical turns count of each winding. As a result, the proposed structure reduces copper usage and transformer height while preserving the voltage conversion capability of a conventional three-phase transformer. Finite element analysis shows that the proposed design reduces magnetic height by 27%, ferrite volume by 34%, and copper volume by 28%. Circuit-level simulations of an 800 V/12 V,3 kW CLLLC dual-active-bridge converter further show that the lower winding resistance reduces total system loss by 91% and increases DC-DC efficiency from 82.6% to 97.6% at 3 kW output.

Inoue, Shuntaro [ORNL] (ORCID:0000000262637627)↗
DOE OSTI2025

Understanding Reliability Trade-Offs in 1T-nC and 2T-nC FeRAM Designs

Ferroelectric random access memory (FeRAM) is a promising candidate for energy-efficient nonvolatile memory, particularly for logic-in-memory and compute-in-memory (CIM) applications. Among the available cell architectures, One-Transistor–n-Capacitor (1T-nC) and two-transistor–n-capacitor (2T-nC) FeRAMs each offer distinct trade-offs in density, scalability, and reliability. In this work, we present a comparative study of these two architectures under both dimensional scaling ( XY/Z shrinkage) and vertical integration (increasing stacked capacitors per cell). Using technology computer-aided design (TCAD) and circuit-level simulations, we analyze how scaling impacts ferroelectric capacitance, parasitic coupling, and floating-node (FN) dynamics, which together dictate sense margin (SM) and read stability. A key mitigation strategy—floating unselected capacitors—is applied to both architectures, effectively decoupling the SM from the number of stacked capacitors and enabling tractable analysis across scaling regimes. Results show that 1T-nC suffers more from charge sharing with the bitline (BL), while 2T-nC benefits from transistor isolation and stronger low-voltage sensing at the cost of increased area. By systematically evaluating these behaviors across scaling directions, this work establishes the reliability trade-offs of 1T-nC and 2T-nC cells and provides design guidelines for high-density, vertically integrated FeRAM systems.

1T-nC↗
DOE OSTI2025

A Stable and Ultrafast Control for Multiparallel Grid-Tied SiC Inverters With LVRT Capability Considering Cable Impedance

The stability of multiparalleled grid-tied inverters remains a challenging issue especially during low-voltage ride-through (LVRT) in the presence of grid impedance. SiC device-based grid-tied inverters can achieve advantages such as higher efficiency, reduced size of interface filters, and fast dynamics; however, they can exacerbate this stability issue particularly when LVRT occurs along with high inrush current due to their low inertia characteristics. In this article, a direct deadbeat control method without any PI control loop is proposed for multiparallel grid-tied SiC inverters. The proposed control achieves instantaneous current regulations within switching cycles. In addition, it mitigates high inrush currents and maintains stability during LVRT transients without requiring mode transitions between normal and LVRT operation modes, thereby achieving an ultrafast response and seamless operation through this unified control method. The Lyapunov method is applied to analyze the multiparallel inverter stability in the presence of grid impedance with proposed deadbeat control method. The inverter V-I trajectories during LVRT transients are derived to illustrate the ultrafast and stable feature of proposed control. Finally, the experimental results of two grid-tied SiC inverters operating at LVRT transients are provided to verify the advantages of the proposed control method.

14 SOLAR ENERGY↗
DOE OSTI2026

LuSEE-night power distribution system design

The Lunar Surface Electromagnetic Experiment at Night (LuSEE-Night) is a low-frequency, 0.5 to 50 MHz, radio experiment on the radio-quiet far side of the Moon. The instrument will be launched by NASA Commercial Lunar Payload Services in 2026. The LuSEE-Night instrument core is composed of a radio frequency spectrometer (SPT) processing signals from four antennas, the Data Controller Board (DCB), low electromagnetic interference (EMI) Picket Fence Power Supply (PFPS), and Power Distribution Unit (PDU). The battery powers the instrument during the lunar night and stores energy harvested by the solar panel array during the lunar day. The battery charging is controlled by the Power Conditioning and Distribution Unit (PCDU). The unregulated power is supplied either by the SpaceCraft (S/C) or the battery and gets distributed to the PFPS, communication radio, heaters, and deployables through the PDU. The PFPS generates all regulated low-voltage rails using switching regulation synchronized to the LuSEE-Night clock, which ensures self-generated EMI will be confined to well-defined frequency bins. Here, we discussed the unregulated power distribution system architecture and functionality. The PDU engineering and flight modules are developed and characterized to confirm compliance with LuSEE-Night requirements. At the time of writing, all power subsystem components have been integrated into the payload.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Tabletop Testing for EV Charging Ecosystem PKI (Project T34PKI Final Report)

To test the communications and cybersecurity functionality, Electric Vehicle and charging station vendors have had to ship their products to in-person testing events. This is cumbersome, expensive, inefficient, and an impediment to rapid time-to-deployment. In this project Sandia used COTS hardware and Open-Source Software to develop and demonstrate a more agile, productive approach: testing low-voltage controllers independently from high-voltage power delivery sub-systems. This approach allows communications controllers to be transported easily (e.g. shipped at low cost, checked as airline baggage); set up on a table-top (“bench testing”); and use ordinary 120 VAC outlets to conduct agile testing. Table-top platforms become end nodes that can connect to laboratory and cloud-based servers to test communications and cybersecurity, specifically Public Key Infrastructure (PKI) functionality and interoperability, separately from EV battery charging (power/energy transfer) functionality.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2026

Effectively Considering the Distribution System in Integrated Resource Plans

While electricity planning practices vary by state and utility based on utility type and market structure, integrated resource planning (IRP) remains a prominent vehicle — even in states with centrally-organized wholesale electricity markets. IRP focuses on meeting forecasted long-term electricity needs. Typically, utilities have not considered impacts of design and operation of the low-voltage distribution network in IRP. With advanced capabilities of grid-edge technologies to generate and store electricity and provide load flexibility, and large utility investments in distribution systems, it's increasingly important to consider at least some distribution planning elements in IRP. This report considers the value proposition for doing so, such as reducing utility costs through resource co-optimization and strategic siting of grid-edge resources, and idenfities the most important touchpoints between planning for bulk power and distribution systems and provide a range of tactics for integrating these two processes.

Relf, Grace [Lawrence Berkeley National Laboratory↗
DOE OSTI2025

POWER ELECTRONICS GRID TIED SYSTEM FINAL REPORT

Across the country, electric utilities are grappling with the persistent hurdles of integrating Distributed Energy Resources (DERs). Managing these assets safely and effectively is a complex endeavor, complicated by varying ownership structures, management philosophies, and the diversity of the technologies themselves. Consequently, the industry has seen a proliferation of bespoke system designs, control strategies, and communication frameworks—forcing utilities to spend significant time and resources developing one-off integration solutions. This project addressed these integration hurdles through a scalable demonstration of intelligent devices designed to coordinate and control diverse resources in low-voltage applications. This concept minimized the need for complex integration by transforming the separate DERs into a dispatchable virtual power plant (VPP) with integrated resiliency functions (called a Node). By collaborating with a utility partner, the project focused on developing rapidly implementable use cases that bridged the gap between theoretical control and real-world deployment

99 GENERAL AND MISCELLANEOUS↗