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At least 19 records

High-Power Impulse Magnetron Sputter Deposition of Boron Carbide with Full-Face Erosion Magnetron and Mixed Ar-Ne Plasma

Boron carbide (B 4 C) is an attractive inertial confinement fusion ablator material. The fabrication of B4C ablators by magnetron sputtering requires process optimization. To increase process flexibility, here we explore high-power impulse magnetron sputter (HiPIMS) deposition of B 4 C in pure Ar and mixed Ar-Ne plasmas. Here, the results show that higher plasma discharge currents can be reached with a mixed Ar-Ne plasma in the entire working pressure range studied (5 𝑡𝑜 50 mTorr). At 45 mTorr with 10% of Ne in the Ar-Ne mix, high peak target current densities of ~1 A cm −2 were demonstrated. Films deposited with such a mixed Ar-Ne plasma with a full-face erosion magnetron source on substrates biased at −25 V exhibited higher density and improved mechanical properties, albeit with higher compressive residual stresses compared to the case of HiPIMS deposition in a pure Ar plasma. This work demonstrates additional process flexibility of the HiPIMS discharge mode for the deposition of B 4 C coatings.

Ablator capsule

On operation and control of CW magnetrons for superconducting accelerators

CW magnetrons, developed for industrial RF heaters, were suggested to feed RF cavities of superconducting accelerators due to higher efficiency and lower cost of RF power than provide traditionally used klystrons, IOTs or solid-state amplifiers. RF amplifiers driven by a master oscillator serve as coherent RF sources. CW magnetrons are regenerative RF auto generators with a huge regenerative gain. This causes regenerative instability with a notable noise when a magnetron operates as an auto generator i.e., with the anode voltage above the threshold of self-excitation. Traditionally, an injection locking by a small signal is used for phase stabilization of magnetrons. In this case CW magnetrons with the injection-locked (coherent) oscillations generate a notable level of noise. This may preclude use of CW magnetrons in this mode in the Superconducting RF (SRF) accelerators. This paper reviews PIC modeling and previously obtained experimental results for the operation and control of CW magnetrons, which led to the development of techniques most suitable for various SRF accelerators using forced RF oscillation of magnetrons, when the magnetron is launched by an injected forcing signal, and regenerative noise is suppressed.

Kazakevich, G. [MUONS Inc., Batavia] (ORCID:000000

Grid-Assisted Direct-Current Magnetron Sputtering of Titanium: Plasma Discharge Diagnostics

Grid-assisted magnetron sputtering is attractive for the deposition of ultrathick Be coatings in inertial confinement fusion (ICF) applications because it offers improved control over the plasma. Here, we investigate the plasma discharge characteristics of grid-assisted direct current magnetron sputtering with Ti as a surrogate sputter target material instead of Be. We map the magnetic field of our magnetron source assembly, study the current-voltage characteristics of both the source and the substrate, and measure the energy distributions of ions bombarding the film surface during growth. The results reveal a slightly asymmetric magnetic field of the magnetron source array and strong dependencies of the plasma discharge characteristics on both the grid and the substrate voltages. Positive grid voltage increases both target and substrate currents, increases the plasma potential, and broadens the energy distributions of ions bombarding the substrate. Grid biasing effects on the plasma discharge characteristics and substrate current can be attributed to corresponding changes to the plasma potential, while substrate biasing effects are more complex and nonlinear. Furthermore, these results demonstrate that grid-assisted deposition offers additional flexibility in controlling the deposition process for tuning properties of ultrathick films for ICF applications.

ICF targets

Satellite power system (SPS) magnetron tube assessment study

Taks performed to extend the data base and to define a technology development program for the magnetron directional amplifier for the SPS are reviewed. These include: (1) demonstrating the tracking of phase and amplitude of the microwave output to phase and amplitude references; (2) expanding the range of power over which the directional amplifier will operate; (3)recognizing the importance of amplitude control in overall system design and in simplifying power conditioning; (4) developing a preliminary design for the overall architecture of the power module; (5) demonstrating magnetron starting using the amplitude control system; (6) mathematically modelling and performing a computerized study of the pyrolytic graphite radiating fin; (7) defining the mass of the magnetic circuit for the SPS tube; (8) noise measurement; (9) achieving harmonic suppression by notch reflection filters; (10) estimating the mass of the transmitting antenna; (11) developing a magnetron package with power generation, phase control, and power condition functions; and (12) projecting magnetron package characteristics.

Source record

Satellite Power System (SPS) magnetron tube assessment study

The data base was extended with respect to the magnetron directional amplifier and its operating parameters that are pertinent to its application in the solar power satellite. On the basis of the resulting extended data base the design of a magnetron was outlined that would meet the requirements of the SPS application and a technology program was designed that would result in its development. The proposed magnetron design for the SPS is a close scale of the microwave oven magnetron, and resembles it closely physically and electrically.

Brown, W. C.

Effects of substrate bias and tilt on magnetron sputtered boron carbide films

Maintaining high density and good mechanical properties at oblique angles for magnetron sputtered amorphous boron carbide films remains a challenge. In this study, we investigate the effect of the substrate bias on density, residual stress, mechanical properties, and morphology of boron carbide films deposited via direct current magnetron sputtering with a full-face erosion magnetron source in a mixed Ar-Ne plasma. Results show that films deposited at oblique substrate tilt angles on substrates biased at -50 V possess significantly lower oxygen content, superior mechanical properties, and higher density compared to their electrically grounded counterparts. In conclusion, these enhancements observed at oblique angles, while promising, come at the cost of larger residual compressive stress and higher Ne incorporation in films.

Materials science

High-rate magnetron sputter deposition of low-stress boron carbide films on tilted substrates

Boron carbide is attractive for several applications, including nuclear fuel capsules for inertial confinement fusion (ICF). The fabrication of ICF capsules involves the deposition of ultrathick coatings with density and thickness uniformity on submicron length scales on non-planar (spherical) substrates. Such a deposition requires control of the deposition rate, residual stress, and film microstructure. Here, we systematically study the direct-current magnetron sputter deposition of B 4 C coatings with a full-face-erosion magnetron source as a function of substrate tilt and Ar working gas pressure. Film properties are correlated with results of plasma diagnostics and predictions of Monte Carlo simulations of ballistic sputtering and gas-phase transport. The fabrication of low-stress amorphous B 4 C films with deposition rates of 7μm/h is demonstrated.

Kawasaki, K. [Lawrence Livermore National Laborato

Magnetron tuner has locking feature

Magnetron tuning arrangement features a means of moving a tuning ring axially within an anode cavity by a system of reduction gears engaging a threaded tuning shaft of lead screw. The shaft positions the tuning ring for the desired magnetron output frequency, and a washer prevents backlash.

Martucci, V. J.

Deposition of very thick Mo/Al multilayer films using magnetron sputtering

To understand materials at extreme conditions dynamic ramp compression techniques/experiments are critical, and gradient density impactors (GDIs) have the potential to enable high quality experiments. Very thick (i.e., hundreds of μm thick) multilayer films consisting of high z/low z layers with a gradient in z through the stack can serve as a GDI. Surprisingly while there is a large amount of literature on the topic of multilayer films, there is an absence of literature on very thick multilayer films. A number of multilayer film systems deposited by dc magnetron sputtering were evaluated as potential candidates, including Cu/Al, Ta/Al, and Mo/Al. The Mo/Al multilayer system was observed to be the most promising candidate and is the primary focus of this paper. Mo/Al multilayer films up to ∼400 μm thick with reasonable thickness uniformity were deposited.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND

High-rate deposition of ultrathick bismuth films by direct-current magnetron sputtering

Bismuth coatings deposited at room temperature by physical vapor deposition typically feature irregularly-shaped grains and a high density of voids, thereby preventing their use in many potential applications. Here, we demonstrate the deposition of low-stress, high-density 40-μm-thick Bi films by systematically studying the effect of the deposition rate and substrate tilt on the properties of Bi films deposited at room temperature by direct-current magnetron sputtering. Furthermore, results show that, with increasing deposition rate, the morphology, structure, and properties of Bi films greatly improve, while an increase in substrate tilt leads to a monotonic decrease in film thickness, density, and electrical conductivity.

Bismuth

High-Power Impulse Magnetron Sputter Deposition of Ultrathick Amorphous Carbon

Diamond-like carbon (DLC) is a material of interest for inertial confinement fusion (ICF) ablators. However, the deposition of ultrathick DLC coatings, as required for ICF ablator fabrication, remains a challenge. Here, in this study, we use high-power impulse magnetron sputtering to deposit DLC and demonstrate a set of process parameters leading to high-purity, amorphous DLC coatings with a low compressive residual stress of <400 MPa. Coatings with thicknesses of up to 80 μm are demonstrated.

amorphous carbon

Combinatorial Deposition of Ultrathick Ta-W-Au-Bi High-Entropy Alloys for Next-Generation Hohlraums by Direct-Current Magnetron Sputtering

Hohlraum temperature calculations with the model by J. H. Hammer and M. D. Rosen predict a higher X-ray drive from Ta-W-Au-Bi high-entropy alloys compared to pure Au and recently developed Ta 4 Au and Au-Bi hohlraums. Here, we study the microstructure and properties of 25-75−µm-thick Ta-W-Au-Bi alloy films deposited via combinatorial direct-current magnetron sputtering. All of the films have promising physical properties, including high electrical resistivity, that satisfy the requirements for magnetically assisted inertial confinement fusion experiments. While porosity tends to increase with increasing Bi content, we also found that films with Bi content > 44 at. % exhibited densification close to the substrate/film interface and formed a single-phase alloy. In conclusion, these findings provide a potential path forward for the development of Ta-W-Au-Bi alloys for next-generation hohlraum materials.

Magnetron sputtering

Combinatorial deposition of Au–Bi alloys via high-rate magnetron sputtering

Gold–bismuth (Au–Bi) alloy films are promising candidate materials for inertial confinement fusion (ICF) hohlraums due to their high laser-to-x-ray conversion efficiency, particularly compared with Au, Ta–Au, and Bi hohlraums. However, the fabrication of uniform and dense Au–Bi alloy films remains a challenge. Here, we use a combination of Monte-Carlo modeling and experiments to demonstrate that the microstructure and properties of Au–Bi alloy films can be greatly improved when direct-current magnetron sputtering with high deposition rates of ⩾5 μm h -1 is used. Resultant films are ~90% of their maximum theoretical densities and have low O content of <1 at.%. Films with Bi content above 40 at. % exhibit high electrical resistivity >100μΩ cm, making them suitable for both magnetized and non-magnetized ICF schemes.

Materials science