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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Cylindrical Magnetron Development for Nb3sn Deposition via Magnetron Sputtering

Due to its better superconducting properties (critical temperature Tc~ 18.3 K, superheating field Hsh~ 400 mT), Nb₃Sn is considered as a potential alternative to niobium (Tc~ 9.25 K, Hsh~ 200 mT) for superconducting radiofrequency (SRF) cavities for particle acceleration. Magnetron sputtering is an effective method to produce superconducting Nb₃Sn films. We deposited superconducting Nb₃Sn films on samples with magnetron sputtering using co-sputtering, sequential sputtering, and sputtering from a stoichiometric target. Nb₃Sn films produced by magnetron sputtering in our previous experiments have achieved DC superconducting critical temperature up to 17.93 K and RF superconducting transition at 17.2 K. A magnetron sputtering system with two identical cylindrical cathodes that can be used to sputter Nb₃Sn films on cavities has been designed and is under development now. We report on the design and the current progress on the development of the system.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Experimental evaluation of direct current magnetron sputtered and high-power impulse magnetron sputtered Cr coatings on SiC for light water reactor applications

Two types of physical vapor deposition Cr coatings were deposited on chemical vapor deposited SiC coupons using conventional direct current magnetron sputtering (DCMS) and high-power impulse magnetron sputtering (HiPIMS) to mitigate the corrosion of SiC, an advanced fuel and structural material in light water nuclear reactor cores. Coating microstructure was characterized using scanning electron microscopy and scanning transmission election microscopy. X-ray diffraction analysis was conducted for phase identification and qualitative analysis of residual stresses. The mechanical integrity of the coatings was evaluated using scratch testing, micro-indentation, and nano-indentation tests. Additionally, the microstructure of the DCMS coating consisted of fine columnar grains with nanoscale intercolumnar channels, while the HiPIMS microstructure was denser and free of any columnar defects. The DCMS coating showed a small tensile residual stress, while the HiPIMS coating was under compressive stress. Both types of coatings showed good mechanical integrity in terms of ductility and adhesion to the substrate. Corrosion performance of the coatings was assessed with a 30-day high temperature water autoclave test. Both types of coatings formed a protective Cr 2 O 3 surface layer 20-30 nm thick during the autoclave test. In the DCMS coating, the columnar defects provided permeation pathways for water penetration resulting in oxide formation in the intercolumnar regions in the interior of the coating. Overall, both types of Cr coatings offer promise for the mitigation of hydrothermal corrosion of SiC in light water reactor operating environments.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Commissioning of a two-target DC cylindrical magnetron sputter coater for depositing Nb 3 Sn film on Nb superconducting radiofrequency cavities

A DC cylindrical magnetron sputter coater was commissioned and used to coat Nb 2.6 GHz superconducting radiofrequency (SRF) cavity with Nb 3 Sn. The sputter coater has two identical cylindrical magnetrons that can move, with a controlled speed, along the axis of the SRF cavity to coat the inside surface of the cavity. The design of the sputter coater is discussed, along with its performance. Initially, a sample holder that allows coating on flat substrates at positions similar to the equator and beam tubes of a 2.6 GHz SRF cavity was used to test conditions for fabricating Nb 3 Sn layers. Multilayers of Nb and Sn were sequentially sputtered on flat Nb and sapphire substrates mounted on the equivalent positions of the cavity's beam tubes and the equator using the two identical cylindrical magnetrons. Then, the Nb/Sn multilayers were annealed at 950 °C for 3 h. Here, the ~1.2 μm thick Nb 3 Sn film did not show any other Nb–Sn compounds and had a superconducting transition temperature of 17.61–17.76 K. The 2.6 GHz SRF cavity was coated using similar conditions as flat samples. Cryogenic RF testing of the Nb 3 Sn-coated cavity demonstrated a quality factor of 3.2 × 10 8 at an accelerating gradient of 5 MV/m at 4.4 K.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

High-Power Impulse Magnetron Sputter Deposition of Boron Carbide with Full-Face Erosion Magnetron and Mixed Ar-Ne Plasma

Boron carbide (B 4 C) is an attractive inertial confinement fusion ablator material. The fabrication of B4C ablators by magnetron sputtering requires process optimization. To increase process flexibility, here we explore high-power impulse magnetron sputter (HiPIMS) deposition of B 4 C in pure Ar and mixed Ar-Ne plasmas. Here, the results show that higher plasma discharge currents can be reached with a mixed Ar-Ne plasma in the entire working pressure range studied (5 𝑡𝑜 50 mTorr). At 45 mTorr with 10% of Ne in the Ar-Ne mix, high peak target current densities of ~1 A cm −2 were demonstrated. Films deposited with such a mixed Ar-Ne plasma with a full-face erosion magnetron source on substrates biased at −25 V exhibited higher density and improved mechanical properties, albeit with higher compressive residual stresses compared to the case of HiPIMS deposition in a pure Ar plasma. This work demonstrates additional process flexibility of the HiPIMS discharge mode for the deposition of B 4 C coatings.

Ablator capsule↗
DOE OSTI2025

Grid-Assisted Direct-Current Magnetron Sputtering of Titanium: Plasma Discharge Diagnostics

Grid-assisted magnetron sputtering is attractive for the deposition of ultrathick Be coatings in inertial confinement fusion (ICF) applications because it offers improved control over the plasma. Here, we investigate the plasma discharge characteristics of grid-assisted direct current magnetron sputtering with Ti as a surrogate sputter target material instead of Be. We map the magnetic field of our magnetron source assembly, study the current-voltage characteristics of both the source and the substrate, and measure the energy distributions of ions bombarding the film surface during growth. The results reveal a slightly asymmetric magnetic field of the magnetron source array and strong dependencies of the plasma discharge characteristics on both the grid and the substrate voltages. Positive grid voltage increases both target and substrate currents, increases the plasma potential, and broadens the energy distributions of ions bombarding the substrate. Grid biasing effects on the plasma discharge characteristics and substrate current can be attributed to corresponding changes to the plasma potential, while substrate biasing effects are more complex and nonlinear. Furthermore, these results demonstrate that grid-assisted deposition offers additional flexibility in controlling the deposition process for tuning properties of ultrathick films for ICF applications.

ICF targets↗
DOE OSTI2023

FIRST RESULTS FROM Nb3Sn COATINGS OF 2.6 GHz Nb SRF CAVITIES USING DC CYLINDRICAL MAGNETRON SPUTTERING SYSTEM

A DC cylindrical magnetron sputtering system has been commissioned and operated to deposit Nb3Sn onto 2.6 GHz Nb SRF cavities. After optimizing the deposition conditions in a mock-up cavity, Nb-Sn films are deposited first on flat samples by multilayer sequential sputtering of Nb and Sn, and later annealed at 950 °C for 3 hours. X-ray diffraction of the films showed multiple peaks for the Nb3Sn phase and Nb (substrate). No peaks from any Nb-Sn compound other than Nb3Sn were detected. Later three 2.6 GHz Nb SRF cavities are coated with ~1 µm thick Nb3Sn. The first Nb3Sn coated cavity reached close to Eacc = 8 MV/m, demonstrating a quality factor Q0 of 3.2 × 108 at Tbath = 4.4 K and Eacc = 5 MV/m, about a factor of three higher than that of Nb at this temperature. Q0 was close to 1.1 × 109, dominated by the residual resistance, at 2 K and Eacc = 5 MV/m. The Nb3Sn coated cavities demonstrated Tc in the range of 17.9 ? 18 K. Here, we present the commissioning experience, system optimization, and the first results from the Nb3Sn fabrication on flat samples and SRF cavities.

Shakel, M.S.↗
DOE OSTI2023

First Results From Nb3Sn Coatings of 2.6 GHz Nb SRF Cavities Using DC Cylindrical Magnetron Sputtering System

A DC cylindrical magnetron sputtering system has been commissioned and operated to deposit Nb3Sn onto 2.6 GHz Nb SRF cavities. After optimizing the deposition conditions in a mock-up cavity, Nb-Sn films are deposited first on flat samples by multilayer sequential sputtering of Nb and Sn, and later annealed at 950 °C for 3 hours. X-ray diffraction of the films showed multiple peaks for the Nb3Sn phase and Nb (substrate). No peaks from any Nb- Sn compound other than Nb3Sn were detected. Later three 2.6 GHz Nb SRF cavities are coated with ~1 μm thick Nb3Sn. The first Nb3Sn coated cavity reached close to Eacc = 8 MV/m, demonstrating a quality factor Q0 of 3.2 × 108 at Tbath = 4.4 K and Eacc = 5 MV/m, about a factor of three higher than that of Nb at this temperature. Q0 was close to 1.1 × 109, dominated by the residual resistance, at 2 K and Eacc = 5 MV/m. The Nb3Sn coated cavities demonstrated Tc in the range of 17.9 – 18 K. Here we present the commissioning experience, s ystem optimization, and the first results from the Nb3Sn fabrication on flat samples and SRF cavities.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

FIRST RESULTS FROM Nb3Sn COATINGS OF 2.6 GHz Nb SRF CAVITIES USING DC CYLINDRICAL MAGNETRON SPUTTERING SYSTEM

A DC cylindrical magnetron sputtering system has been commissioned and operated to deposit Nb3Sn onto 2.6 GHz Nb SRF cavities. After optimizing the deposition conditions in a mock-up cavity, Nb-Sn films are deposited first on flat samples by multilayer sequential sputtering of Nb and Sn, and later annealed at 950 °C for 3 hours. X-ray diffraction of the films showed multiple peaks for the Nb3Sn phase and Nb (substrate). No peaks from any Nb-Sn compound other than Nb3Sn were detected. Later three 2.6 GHz Nb SRF cavities are coated with ~1 µm thick Nb3Sn. The first Nb3Sn coated cavity reached close to Eacc = 8 MV/m, demonstrating a quality factor Q0 of 3.2 × 108 at Tbath = 4.4 K and Eacc = 5 MV/m, about a factor of three higher than that of Nb at this temperature. Q0 was close to 1.1 × 109, dominated by the residual resistance, at 2 K and Eacc = 5 MV/m. The Nb3Sn coated cavities demonstrated Tc in the range of 17.9 ? 18 K. Here, we present the commissioning experience, system optimization, and the first results from the Nb3Sn fabrication on flat samples and SRF cavities.

Shakel, M. S.↗
DOE OSTI2023

First Results From Nb3Sn Coatings of 2.6 GHz Nb SRF Cavities Using DC Cylindrical Magnetron Sputtering System

A DC cylindrical magnetron sputtering system has been commissioned and operated to deposit Nb3Sn onto 2.6 GHz Nb SRF cavities. After optimizing the deposition conditions in a mock-up cavity, Nb-Sn films are deposited first on flat samples by multilayer sequential sputtering of Nb and Sn, and later annealed at 950°C for 3 hours. X-ray diffraction of the films showed multiple peaks for the Nb3Sn phase and Nb (substrate). No peaks from any Nb- Sn compound other than Nb3Sn were detected. Later three 2.6 GHz Nb SRF cavities are coated with ~1 μm thick Nb3Sn. The first Nb3Sn coated cavity reached close to Eacc = 8 MV/m, demonstrating a quality factor Q0 of $3.2 \times 108$ at Tbath = 4.4 K and Eacc = 5 MV/m, about a factor of three higher than that of Nb at this temperature. Q0 was close to $1.1 \times 109$, dominated by the residual resistance, at 2 K and Eacc = 5 MV/m. The Nb3Sn coated cavities demonstrated Tc in the range of $17.9 -- 18$ K. Here we present the commissioning experience, system optimization, and the first results from the Nb3Sn fabrication on flat samples and SRF cavities.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

First Results from Nb3Sn Coatings of 2.6 GHz Nb SRF Cavities Using DC Cylindrical Magnetron Sputtering System

A DC cylindrical magnetron sputtering system has been commissioned and operated to deposit Nb3Sn onto 2.6 GHz Nb SRF cavities. After optimizing the deposition conditions in a mock-up cavity, Nb-Sn films are deposited first on flat samples by multilayer sequential sputtering of Nb and Sn, and later annealed at 950 {\deg}C for 3 hours. X-ray diffraction of the films showed multiple peaks for the Nb3Sn phase and Nb (substrate). No peaks from any Nb3Sn compound other than Nb3Sn were detected. Later three 2.6 GHz Nb SRF cavities are coated with ~1 $\mu$m thick Nb3Sn. The first Nb3Sn coated cavity reached close to Eacc = 8 MV/m, demonstrating a quality factor Q0 of 3.2 x 108 at Tbath = 4.4 K and Eacc = 5 MV/m, about a factor of three higher than that of Nb at this temperature. Q0 was close to 1.1 x 109, dominated by the residual resistance, at 2 K and Eacc = 5 MV/m. The Nb3Sn coated cavities demonstrated Tc in the range of 17.9 - 18 K. Here we present the commissioning experience, system optimization, and the first results from the Nb3Sn fabrication on flat samples and SRF cavities.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Magnetron sputter deposition of boron carbide in Ne and Ar plasmas

Conventional magnetron sputter deposition of B 4 C uses Ar as the working gas. In this report we explore the magnetron sputter deposition of B 4 C with a Ne plasma, which is expected to exhibit larger sputtering yields than Ar. We study properties of films deposited with different substrate tilt angles with the magnetron source operated in either direct-current (DC) or radio-frequency (RF) mode in an Ar or Ne plasma. Results show that the B 4 C film properties are determined by a combination of sputtering ballistics and effects of the working gas on the plasma discharge and gas phase scattering of depositing species flux. At constant discharge power, deposition rates for Ar and Ne plasmas are similar, which is attributed to balancing effects of a higher ballistic sputtering yield of Ne and lower ion flux to the target. Both depositing B and C neutral species and bombarding ions have higher energies for the case of Ne plasmas. Films deposited with the RF-driven Ne plasma exhibit a uniform non-columnar structure, lowest oxygen impurity content, and highest mass density and mechanical properties at a cost of Ne incorporation and larger compressive residual stress.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Development of New Magnetron Sputter Deposition Processes for Laser Target Fabrication

Magnetron sputter deposition is an enabling technology for laser target fabrication. Solutions are readily available for the deposition of most sub-micron-thick elemental films on planar substrates. However, major challenges still remain for the development of robust deposition processes in regimes of ultrathick (over ~10 μm) coatings and nonplanar substrates. These challenging deposition regimes are directly relevant to laser target applications, including both sphero-cylindrical hohlraums and spherical ablators for inertial confinement fusion (ICF) targets. Understanding underlying physical mechanisms for a specific material system is crucial for process development, given the overall complexity of the deposition process, its nonlinear dependence on deposition parameters, and a very large process space, often precluding conventional process optimization approaches. Here, we describe our approach to developing new deposition processes and give practical advice with examples of new results from our ongoing studies of glassy boron carbide ceramics for next-generation ICF ablators and nonequilibrium gold-tantalum alloys for hohlraums for magnetized ICF schemes. Emphasis is given to two major challenges of ultrathick coatings related to achieving process stability and reducing residual stress.

36 MATERIALS SCIENCE↗
NASA NTRS1984

Substrate heating rates for planar and cylindrical-post magnetron sputtering sources

Results are presented for the substrate heating energy/atom required in the planar magnetron sputtering of Al, Cr, Ni, Cu, Mo, In, Ta, W, and Pt in Ar, as well as Al and Cr in O2. Data are also obtained for cylindrical magnetron sputtering of Nb, Ag, Ta, W, and Pb-Sn in Ar, and Mo sputtered in Ne, Ar, Kr, and Xe. Planar and cylindrical magnetron heating rates were comparable. Special experiments were conducted to examine the contributions to substrate heating of plasma species and ion neutralization and reflection at the cathode; the results obtained indicate that charged plasma species do not significantly contribute to the heating, but that neutralized and reflected ions play a significant role in the planar as well as cylindrical cases despite the differences in cathode geometry.

Thornton, J. A.↗
DOE OSTI2025

Effects of substrate bias and tilt on magnetron sputtered boron carbide films

Maintaining high density and good mechanical properties at oblique angles for magnetron sputtered amorphous boron carbide films remains a challenge. In this study, we investigate the effect of the substrate bias on density, residual stress, mechanical properties, and morphology of boron carbide films deposited via direct current magnetron sputtering with a full-face erosion magnetron source in a mixed Ar-Ne plasma. Results show that films deposited at oblique substrate tilt angles on substrates biased at -50 V possess significantly lower oxygen content, superior mechanical properties, and higher density compared to their electrically grounded counterparts. In conclusion, these enhancements observed at oblique angles, while promising, come at the cost of larger residual compressive stress and higher Ne incorporation in films.

Materials science↗
DOE OSTI2023

Influence of oxygen on the optical and electrical properties of magnetron-sputtered indium tin oxide thin films at ambient temperature

Indium Tin Oxide (ITO) thin films are commonly used as transparent conductive layers in the production of solar cells. ITO films are typically heat-treated at temperatures exceeding 200 °C after magnetron sputtering to optimize the physical, optical, and electrical characteristics for photovoltaic devices. Here, this high temperature heating procedure greatly limits the use of potential substrates, particularly those comprised of low-temperature-rated polymers. Herein, we examine the physical, optical, and electrical transport effects of oxygen:argon plasmas during radio frequency magnetron sputtering of ITO on glass and flexible polymer surfaces without subsequent heat treatment. ITO thin films were characterized via sheet resistance testing, UV-Vis spectroscopy, X-ray diffraction, and scanning electron microscopy imaging. Sheet resistance measurements revealed an increase in surface resistance with increasing oxygen concentration during sputtering. UV-Vis optical transmittance measurements demonstrated an improvement in optical transmittance with an increase in oxygen concentration reaching a maximum transmittance at an oxygen concentration of 1-2 %. Most importantly, it was discovered that producing bilayers of ITO with pure argon sputtered plasmas followed by oxygen:argon plasmas produced ITO thin films with suitable resistance and transmittance without the need for high temperature post annealing. These results highlight a methodology for the deposition of ITO thin films on temperature sensitive substrates for flexible photovoltaics and low-cost module production.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Radio-frequency magnetron sputter deposition of ultrathick boron carbide films

The deposition of thick B 4 C films with low residual stress by conventional direct-current magnetron sputtering is accompanied by the formation of dust particulates contaminating the target, chamber, and substrates and leading to the formation of nodular defects in films. Here, we demonstrate that the formation of particulates is greatly reduced during radio-frequency magnetron sputtering (RFMS). We systematically study properties of B 4 C films deposited by RFMS with a substrate temperature of 330 °C, a target-to-substrate distance of 10 cm, Ar working gas pressure in the range of 4.5–12.0 mTorr (0.6–1.6 Pa), and substrate tilt angles of 0°–80°. All films are x-ray amorphous. A columnar structure develops with increasing either Ar pressure or substrate tilt. For columnar films, the column tilt angle decreases with increasing Ar pressure, which we attribute to a corresponding increase in the width of the distribution of impact angles of deposition flux. In contrast to the Keller–Simmons rule, the deposition rate increases with increasing Ar pressure, which suggests a better coupling of the RF energy to the plasma processes that lead to target sputtering at higher pressures. There is a critical substrate tilt angle above which the total residual stress is close to zero. This critical substrate tilt angle is ~0° for an Ar pressure of 12 mTorr (1.6 Pa). The lower residual stress state, necessary for depositing ultrathick films, is characterized by a larger concentration of nanoscale inhomogeneities and decreased mechanical properties. Based on these results, RFMS deposition of 60-μm-thick B 4 C films is demonstrated.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Effects of sample bias on adhesion of magnetron sputtered Cr coatings on SiC

Swelling of SiC at 300 C due to in-service neutron irradiation causes tensile residual stresses in coatings which are expected to adversely affect the performance of coated SiC composite fuel cladding for light water reactors. Matching the coating swelling with the substrate, a solution common for thermal expansion, is not practical in the case of neutron irradiation. Biasing samples during magnetron sputtering deposition induces compressive residual stress which may counteract this. In this study, chromium coatings were deposited on SiC by DC magnetron sputtering with no external heating at bias voltages of –50V, –75V, and –100V. The effects of the bias voltage on morphology, residual stress, microstrain, texture, and adhesion are shown. The low deposition temperature resulted in the coating microstructure evolution following an energetic particle bombardment dominated trend. Additionally, at the two lower bias voltages knock-on implantation dominated increasing the residual stress and microstrain while at the highest bias voltage, thermal spike migration allowed for defect relaxation. When the knock-on induced compressive residual stress exceeded 0.8 GPa microcrack formation in the SiC substrate decreased coating adhesion. While no microcracks formed at the lowest bias voltage, insufficient atomic mobility during coating growth lead to voids forming in the coating. A balance is needed to form void-free coatings that have high compressive residual stress.

36 MATERIALS SCIENCE↗