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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

Method of Promoting Single Crystal Growth During Melt Growth of Semiconductors

The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.

Su, Ching-Hua↗
NASA NTRS1992

Bulk YBa2Cu3O(x) superconductors through pressurized partial melt growth processing

A novel pressurized partial melt growth process has been developed for producing large pieces of bulk Y-Ba-Cu-O superconductors. During long-time partial melt growth stage, an additional driving force for solidification is obtained by using pressurized oxygen gas. The microstructure and superconducting properties of the resulting samples were investigated. It was found that this new technique can eliminate porosity and inhomogeneity, promote large-scale grain-texturing, and improve interdomain coupling as well.

Hu, S.↗
NASA NTRS2021

Phase Diagram, Melt Growth and Characterization of Cd0.8Zn0.2Te Crystals for X-Ray Detector

In this study, the solidus curve of the Cd0.8Zn0.2Te homogeneity range was constructed from the partial pressure measurements by optical absorption technique which provided the information of the melt growth parameters to process crystals with the required electrical resistivity. The melt growth of Cd0.8Zn0.2Te crystals were then processed by directional solidification under controlled Cd overpressure. During the growth experiments, several procedures have been developed to improve the crystalline quality: (1) minimizing the contamination of impurities (2) improving the structural defects and (3) minimizing the Te-precipitates within the grown crystals to enhance charge transport properties. Additionally, the thermal conductivity, electrical conductivity, and Seebeck coefficient of a vapor-grown CdTe and two melt-grown Cd0.8Zn0.2Te crystals were measured between 190oC and 780oC to provide an in-depth understanding of the thermal and electrical conduction mechanisms of the crystals as well as the prospect of its thermoelectric applications.

x-ray detector↗
NASA NTRS1999

Identification and Control of Gravity Related Defect Formation During Melt Growth of Bismuth-Silicate (Bi12SiO20)

In the light of strong indications that a majority of critical defects formed in bismuth silicon oxide (BSO) during growth from the melt is related directly or indirectly to gravitational interference, it is suggested to use the reduced gravity environment of outer space for experimentation directed at the identification and control of these defects. The results of these experiments are expected to lead to advances in our understanding of crystal growth related defect formation in general and will establish a basis for effective defect engineering, the approach to efficient achievement of defect related, application specific properties in opto-electronic materials

Zheng, Y.↗
NASA NTRS2012

Modeling of Melt Growth During Carbothermal Processing of Lunar Regolith

The carbothermal processing of lunar regolith has been proposed as a means to produce carbon monoxide and ultimately oxygen to support human exploration of the moon. In this process, gaseous methane is pyrolyzed as it flows over the hot surface of a molten zone of lunar regolith and is converted to carbon and hydrogen. Carbon gets deposited on the surface of the melt, and mixes and reacts with the metal oxides in it to produce carbon monoxide that bubbles out of the melt. Carbon monoxide is further processed in other reactors downstream to ultimately produce oxygen. The amount of oxygen produced crucially depends on the amount of regolith that is molten. In this paper we develop a model of the heat transfer in carbothermal processing. Regolith in a suitable container is heated by a heat flux at its surface such as by continuously shining a beam of solar energy or a laser on it. The regolith on the surface absorbs the energy and its temperature rises until it attains the melting point. The energy from the heat flux is then used for the latent heat necessary to change phase from solid to liquid, after which the temperature continues to rise. Thus a small melt pool appears under the heated zone shortly after the heat flux is turned on. As time progresses, the pool absorbs more heat and supplies the energy required to melt more of the regolith, and the size of the molten zone increases. Ultimately, a steady-state is achieved when the heat flux absorbed by the melt is balanced by radiative losses from the surface. In this paper, we model the melting and the growth of the melt zone with time in a bed of regolith when a portion of its surface is subjected to a constant heat flux. The heat flux is assumed to impinge on a circular area. Our model is based on an axisymmetric three-dimensional variation of the temperature field in the domain. Heat transfer occurs only by conduction, and effects of convective heat transport are assumed negligible. Radiative heat loss from the surface of the melt and the regolith to the surroundings is permitted. We perform numerical computations to determine the shape and the mass of the melt at steady state and its time evolution. We first neglect the volume change upon melting, and subsequently perform calculations including it. Predictions from our model are compared to test data to determine the effective thermal conductivities of the regolith and the melt that are compatible with the data

Balasubramaniam, R.↗
NASA NTRS1976

Thermocapillary convection in microgravity crystal growth melts of indium-antimonide

Results of two recent crystal growth experiments conducted aboard Skylab are analyzed for thermoconvective aspects. Theoretical temperature and velocity profiles in the crystal melts are predicted via computer modeling. These results are compared with experimental data obtained from Skylab investigators. From theoretical considerations, both indium-antimonide experiments should have exhibited substantial thermocapillary convection, but did not due to probable oxide film interference and/or opposing solutal effects.

Bourgeois, S. V., Jr.↗
NASA NTRS1999

Melt Growth of a Nonlinear Optical Crystal Triethylphosphine Sulfide using Modified Bridgman-Stockbarger Technique

Bulk single crystals of triethylphosphine sulfide (C2H5)3P(S), a potential nonlinear optical organic material has been grown from melt using Bridgman- Stockbarger method. Commercially available material triethylphosphine sulfide procured from Johnson Matthey was purified by physical vapor transport using low pressure sublimaton (about 30 mTorr). Modified Bridgman-Stockbarger technique is characterized by the smallest possible quantity of product in the melt for a short period of time. The temperature gradient was chosen to be about 10 C/cm and the ampoule was lowering rate was chosen to be 0.2-0.3 mm/h. For various growth conditions, several single crystal of triethylphosphine sulfide have been grown with sizes 10X10X15mm(exp 3). The second harmonic generation (SHG) efficiency was measured and has been found to be comparable to phase matched potassium dihydrogen phosphate crystals. Further characterization of the grown single crystals is in progress and the results will be presented at the symposium.

Curry, K.↗
NASA NTRS2003

Melt-Crucible Wetting Behavior in Semiconductor Melt Growth Systems

The wetting angles of several semiconductor-substrate combinations that are of practical importance for crystal growth have been measured: Ga-GaSb-Sb on fused quartz; Ge on fused quartz and carbon-based substrates, each with different roughness; Si on fused quartz plates and on plates coated with fused quartz, Si3N4, and BN powders. The Ga-GaSb-Sb system showed no significant dependence of the wetting angle on the composition despite a large composition dependence of the surface tension. For Ge, the effect of the roughness on the angle could initially be seen on both types of substrates, but for the fused quartz substrates an equilibrium value independent of the surface treatment was reached after several hours of contact time. For Si, total wetting was found for Si3N4 powders. A reduction of the angle over time was found for both fused quartz and BN powders, with the BN powder showing the highest angle at 150-120 deg.

Croell, A.↗
NASA NTRS2004

Identification and Control of Gravity Related Defect Formation During Melt Growth of Electro-Optic Single Crystals Bismuth Silicate(Bi12SiO20)

A research carried out under Award Number NAG8-1487 was aimed at to the design, conduct and analysis of experiments directed at the identification and control of gravitational effects on crystal growth, segregation and defect formation in the Sillenite system: bismuth silicate (Bi(12)SiO(20)). Correlation analyses was conducted in order to establish the influence of gravity related defects introduced during crystal growth on critical, application specific properties. Achievement of the states objective was conducted during the period from Feb. 01, 1998 to Dec. 31, 2003 with the following anticipated milestones: 1. Establishment of capabilities for (a) reproducible Czochralski and Bridgman-type growth of BSO single crystals and (b) for comprehensive analysis of crystalline and chemical defects as well as for selective property characterization of grown crystals (year 1). 2. Design and execution of critical space growth experiment(s) based on analyses of prefatory space results (experiments aimed at establishing the viability of planned approaches and procedures) and on unresolved issues related to growth, segregation and defect formation associated with conventional growth in Bridgman geometries. Comparative analysis of growth under conventional and under mu-g conditions; identification of gravity related defect formation during conventional Bridgman growth and formulation of approaches for their control (years 2 and 3). Development of charge confinement system which permits growth interface demarcation (in a mu-g environment) as well as minimization of confinement related stress and contamination during growth; design of complementary mu-g growth experiments aimed at quantitative mu-g growth and segregation analyses (year 4). 3. Conduct of quantitative mu-g growth experiments directed at: (a) identification and control of gravity related crystalline and chemical defect formation during single crystal growth of Bi(12)SiO(20) and at (b) defect engineering -the development of approaches to the controlled generation during crystal growth of specified point defects in homogeneous distribution (year 5). The proposed research places focus on a class of materials which have outstanding electrical and optical properties but have so far failed to reach their potential, primarily because of our inability to control adequately their stoichiometry and crystal defect formation as well as confinement related contamination and lattice stress.

Becia, Piotr↗
NASA NTRS1977

Convection analysis on various crystal growth systems

Specific work done during an indicated contract period was reviewed. An extensive survey of crystal growth literature and related topics was accomplished during this time. Specific attention was given to those areas dealing with the effects of transport phenomena on crystal growth. Critical evaluations of growth techniques were made. Techniques studied included closed tube vapor growth, open reactor vapor growth, melt growth and solution growth.

Source record↗
NASA NTRS1989

Center for the development of commercial crystal growth in space

The second year of operation of the Center for Commercial Crystal Growth in Space is described. This center is a consortium of businesses, universities and national laboratories. The primary goal of the Center's research is the development of commercial crystal growth in space. A secondary goal is to develop scientific understanding and technology which will improve commercial crystal growth on earth. In order to achieve these goals the Center's research is organized into teams by growth technique; melt growth, solution growth, and vapor growth. The melt growth team is working on solidification and characterization of bulk crystals of gallium arsenide and cadmium telluride. They used high resolution X-ray topography performed at the National Synchrotron Light Source at Brookhaven National Laboratory. Streak-like features were found in the diffraction images of semi-insulating undoped LEC GaAs. These were shown to be (110) antiphase boundaries, which have not been reported before but appear to be pervasive and responsible for features seen via less-sensitive characterization methods. The results on CdTe were not as definitive, but indicate that antiphase boundaries may also be responsible for the double peaks often seen in X-ray rocking curves of this material. A liquid encapsulated melt zone system for GaAs has been assembled and techniques for casting feed rods developed. It was found that scratching the inside of the quartz ampoules with silicon carbide abrasive minimized sticking of the GaAs to the quartz. Twelve floating zone experiments were done.

Wilcox, William R.↗
NASA NTRS1981

Controlled in situ etch-back

A controlled in situ etch-back technique is disclosed in which an etch melt and a growth melt are first saturated by a source-seed crystal and thereafter etch-back of a substrate takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.

Mattauch, R. J.↗
NASA NTRS1983

Pellet Feed for Dendritic-Web Growth

Melt replenishment system sustains continuous growth of silicon dentritic web for several days. Substantially increases size of batch, limited mainly by level of impurities and life of crucible. Silicon pellets automatically added to crucible sustain crystal growth for days.

Duncan, C. S.↗
NASA NTRS1986

Convective effects in float-zone and Czochralski melts

The hydrodynamics of crystal-growth melts is a relatively new research area. Numerical modeling of these processes is necessary. The work discussed herein is in two parts: numerical simulations of the flow in a Czochralski melt, and also of that in a float zone. In addition, for the float-zone case, energy stability theory will be used to determine stability bounds for the onset of oscillatory thermo-capillary flow. Convective effects in crystal-growth melts arise from a variety of mechanisms. Temperature gradients both in the direction of gravity and normal to it give rise to convection due to buoyancy effects. Rotation of the crucible and/or crystal causes a forced convection which may augment or oppose the buoyancy-driven flow. Finally, thermo-capillary forces (due to the variation of surface tension with temperature) drive surface motions which in turn generate convection in the bulk fluid. All of these mechanisms are present in either Czochralski or float-zone growth. The objective of the Czochralski modeling is to develop an accurate numerical simulation of the flow in a Czochralski silicon melt and to investigate the effects of various parameters on the flow properties. Like some earlier investigations, the intent is to simulate the effects of buoyancy, forced and thermo-capillary convection, including unsteady effects. Unlike earlier work, the aim is to include the effects of a variable free surface and freezing interface and, possibly incorporate nonaxisymmetric effects.

Neitzel, G. P.↗
NASA NTRS1999

Identification of Gravity-Related Effects on Crystal Growth From Melts With an Immiscibility Gap

This work involves an experimental-numerical approach to study the effects of natural and Marangoni convections on solidification of single crystals from a silicate melt with a liquid-liquid immiscibility gap. Industrial use of crystals grown from silicate melts is becoming increasingly important in electronic, optical, and high temperature structural applications. Even the simplest silicate systems like Al203-SiO2 have had, and will continue to have, a significant role in the development of traditional and advanced ceramics. A unique feature of crystals grown from the silicate systems is their outstanding linear electro-optic properties. They also exhibit exceptionally high optical rotativity. As a result, these crystals are attractive materials for dielectric, optical, and microwave applications. Experimental work in our laboratory has indicated that directional solidification of a single crystal mullite appears to be preceded by liquid-liquid phase separation in the melt. Disruption of the immiscible state results in crystallization of a two phase structure. There is also evidence that mixing in the melt caused by density-driven convection can significantly affect the stability of the immiscible liquid layers and result in poly-crystalline growth. On earth, the immiscible state has only been observed for small diameter crystals grown in float zone systems where natural convection is almost negligible. Therefore, it is anticipated that growth of large single crystals from silicate melts would benefit from microgravity conditions because of the reduction of the natural convective mixing. The main objective of this research is to determine the effects of transport processes on the phase separation in the melt during growth of a single crystal while addressing the following issues: (1) When do the immiscible layers form and are they real?; (2) What are the main physical characteristics of the immiscible liquids?; and (3) How mixing by natural or Marangoni convection affects the stability of the phase separated melt.

Kassemi, M.↗
NASA NTRS1989

Thermocapillary convection in zone-melting crystal growth - An open-boat physical simulation

Thermocapillary convection in a molten zone of NaNO3 contained in a boat with a free horizontal surface, that is heated from above by a centered wire heater, was studied to simulate flow in zone-melting crystal growth. Using a laser-light-cut technique and fine SiO powder as a tracer, convection in the melt zone was visualized in two different cases. In the first case, the entire melt surface was free, while in the second the melt surface was free only in the immediate vicinity of one vertical wall and was covered elsewhere, this wall being to simulate the melt/crystal interface during crystal growth. It was observed that thermocapillary convection near this wall prevailed in the first case, but was reduced significantly in the second. Since thermocapillary rather than natural convection dominated in the melt, the effect of the partial covering of the melt surface on thermocapillary convection in the melt observed in this study is expected to be similar under microgravity.

Kim, Y. J.↗
NASA NTRS1988

Process modelling for space station experiments

The work performed during the first year 1 Oct. 1987 to 30 Sept. 1988 involved analyses of crystal growth from the melt and from solution. The particular melt growth technique under investigation is directional solidification by the Bridgman-Stockbarger method. Two types of solution growth systems are also being studied. One involves growth from solution in a closed container, the other concerns growth of protein crystals by the hanging drop method. Following discussions with Dr. R. J. Naumann of the Low Gravity Science Division at MSFC it was decided to tackle the analysis of crystal growth from the melt earlier than originally proposed. Rapid progress was made in this area. Work is on schedule and full calculations were underway for some time. Progress was also made in the formulation of the two solution growth models.

Rosenberger, Franz↗