Search NASA⌕ Search

SEARCH · Search NASA

Results for “mesa isolation”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

Laser Ablation for Low-Cost Multijunction III-V Solar Cell Mesa Isolations

Eliminating photolithography from solar cell processing is a significant opportunity for cost reduction for III-V solar cells. In this work, we test femtosecond laser ablation and scribing as an alternative to contact photolithography and wet chemical etching for mesa isolation, when processing multijunction cells. We demonstrate that upright multijunction solar cells isolated by using the laser as a scribe to cleave through the substrate had virtually no performance loss when compared to a baseline cell processed with photolithography. By contrast, cells isolated by laser ablating through the active layers have performance losses that cannot be fully eliminated with post-processing etches. This demonstration of photolithography-free mesa isolation with no performance losses is promising for less expensive III-V manufacturing.

14 SOLAR ENERGY↗

Lithography-Free Mesa Isolation of III–V Solar Cells Through Laser Ablation

Eliminating photolithography from solar cell processing is a significant opportunity for cost reduction for III-V solar cells. Here, in this work, we explore femtosecond laser ablation as an alternative to contact photolithography and wet chemical etching for mesa isolation. We demonstrate both GaAs and GaInP solar cells mesa-isolated by femtosecond laser ablation with minimal to no loss in solar cell performance. We show the best results with a 400 fs UV pulsed laser and a short clean-up etch that also serves as a contact layer removal etch.

14 SOLAR ENERGY↗

Lithography-Free Mesa Isolation by Laser Ablation for Multijunction III-V Photovoltaic Space Power Generation

Eliminating photolithography from photovoltaic device processing is a significant opportunity for cost reduction and increased manufacturing throughput. In this work, we test femtosecond laser ablation and scribing as an alternative to contact photolithography and wet chemical etching for mesa isolation of multijunction devices. We demonstrate that upright multijunction devices isolated by using the laser as a scribe to cleave through the substrate had virtually no performance loss when compared to a baseline device processed with photolithography. By contrast, devices isolated by laser ablating through the active layers have performance losses that cannot be fully eliminated with postprocess etching. This demonstration of photolithography-free mesa isolation with no performance losses is promising as a pathway to less expensive and higher throughput III-V device manufacturing.

14 SOLAR ENERGY↗

Induced superconductivity in the two-dimensional topological insulator phase of cadmium arsenide

Hybrid structures between conventional, s-wave superconductors, and two-dimensional topological insulators (2D TIs) are a promising route to topological superconductivity. Here, we investigate planar Josephson junctions fabricated from hybrid structures that use thin films of cadmium arsenide (Cd3As2) as the 2D TI material. Measurements of superconducting interference patterns in a perpendicular magnetic field are used to extract information about the spatial distribution of the supercurrent. We show that the interference patterns are distinctly different in junctions with and without mesa-isolation. In mesa-defined junctions, the bulk of the 2D TI appears to be almost completely shunted by supercurrent flowing along the edges, whereas the supercurrent is much more uniform across the junction when the Cd3As2 film extends beyond the device. We discuss the possible origins of the observed behaviors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O 3 treatments

Plasma etching of p-type GaN creates n-type nitrogen vacancy (V N ) defects at the etched surface, which can be detrimental to device performance. In mesa isolated diodes, etch damage on the sidewalls degrades the ideality factor and leakage current. Here a treatment was developed to recover both the ideality factor and leakage current, which uses UV/O 3 treatment to oxidize the damaged layers followed by HF etching to remove them. The temperature dependent I–V measurement shows that the reverse leakage transport mechanism is dominated by Poole–Frenkel emission at room temperature through the etch-induced V N defect. Depth resolved cathodoluminescence confirms that the damage is limited to first several nanometers and is consistent with the V N defect.

42 ENGINEERING↗

Preserving Manhattan Project historic sites

Beginning in 1943, Project Y – the code name for Los Alamos during World War II – transformed the isolated Pajarito Plateau. The sounds of construction equipment replaced the voices of the Los Alamos Ranch School boys and local homesteaders. Construction crews hurriedly built many structures on mesa tops and in the canyons of Los Alamos. Countless concerns flooded Manhattan Project staff, but designing structures to withstand the test of time was not one of them. The top-secret race to develop an atomic bomb before Nazi Germany was on and everyone felt the pressure. Over the next 75 years, some of the structures slumped into disrepair from exposure to the harsh northern New Mexico environment - concrete cracking and spalling, wood frames rotting. That’s where Los Alamos National Laboratory’s historic preservation team enters the Manhattan Project story.

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗

Wave topology in Hall magnetohydrodynamics

Hall magnetohydrodynamics (HMHD) extends ideal MHD by incorporating the Hall effect via the induction equation, making it more accurate for describing plasma behavior at length scales below the ion skin depth. Despite its importance, a comprehensive description of the eigenmodes in HMHD has been lacking. In this work, we derive the complete spectrum and eigenvectors of HMHD waves and identify their underlying topological structure. We prove that the HMHD wave spectrum is homotopic to that of ideal MHD, consisting of three distinct branches: the slow magnetosonic-Hall waves, the shear Alfvén-Hall waves, and the fast magnetosonic-Hall waves, which continuously reduce to their ideal MHD counterparts in the limit of vanishing Hall parameter. Contrary to a recent claim [Mahajan, Sharma, and Lingam, Phys. Plasmas 31, 090701 (2024)], we find that HMHD does not admit any additional wave branches beyond those in ideal MHD. In conclusion, the key qualitative difference lies in the topological nature of the HMHD wave structure: it exhibits nontrivial topology characterized by a Weyl point—an isolated eigenmode degeneracy point—and associated nonzero Chern numbers of the eigenmode bundles over a 2-sphere in 𝐤-space surrounding the Weyl point.

Alfvén waves↗

Molecular and Epidemiological Investigation of Fluconazole-resistant Candida parapsilosis —Georgia, United States, 2021

Abstract Background Reports of fluconazole-resistant Candida parapsilosis bloodstream infections are increasing. We describe a cluster of fluconazole-resistant C parapsilosis bloodstream infections identified in 2021 on routine surveillance by the Georgia Emerging Infections Program in conjunction with the Centers for Disease Control and Prevention. Methods Whole-genome sequencing was used to analyze C parapsilosis bloodstream infections isolates. Epidemiological data were obtained from medical records. A social network analysis was conducted using Georgia Hospital Discharge Data. Results Twenty fluconazole-resistant isolates were identified in 2021, representing the largest proportion (34%) of fluconazole-resistant C parapsilosis bloodstream infections identified in Georgia since surveillance began in 2008. All resistant isolates were closely genetically related and contained the Y132F mutation in the ERG11 gene. Patients with fluconazole-resistant isolates were more likely to have resided at long-term acute care hospitals compared with patients with susceptible isolates (P = .01). There was a trend toward increased mechanical ventilation and prior azole use in patients with fluconazole-resistant isolates. Social network analysis revealed that patients with fluconazole-resistant isolates interfaced with a distinct set of healthcare facilities centered around 2 long-term acute care hospitals compared with patients with susceptible isolates. Conclusions Whole-genome sequencing results showing that fluconazole-resistant C parapsilosis isolates from Georgia surveillance demonstrated low genetic diversity compared with susceptible isolates and their association with a facility network centered around 2 long-term acute care hospitals suggests clonal spread of fluconazole-resistant C parapsilosis. Further studies are needed to better understand the sudden emergence and transmission of fluconazole-resistant C parapsilosis.

Misas, Elizabeth (ORCID:0000000162437716)↗

Interference-Limited Absorption in Dense Molecular Nanolayers Near Reflecting Surfaces

We investigate linear resonant absorption by a dense ensemble of molecules confined to a sub-wavelength layer in two geometries: (i) a free-standing film in a homogeneous space and (ii) the same film placed at a controlled distance from a reflecting surface. In both cases, increasing the effective light–matter coupling (via molecular density/oscillator strength) produces a nonmonotonic response: absorption rises to an optimum and then decreases as the film becomes increasingly radiatively bright and reflective. Finite-difference time-domain simulations and analytical transfer-matrix calculations agree quantitatively and yield compact ridge conditions for the optimum. We interpret the trends using a scattering/port picture: the isolated film is a symmetric two-port system (reflection and transmission), which bounds single-sided resonant absorption to ≤50% in the ultrathin limit (reflecting transition saturation), whereas adding a mirror suppresses transmission and converts the structure into an effectively one-port absorber. In the mirror-backed geometry, interference can cancel reflection, and unity absorption is obtained at critical coupling, when radiative leakage is balanced by intrinsic molecular loss. These results clarify fundamental limits and design rules for collective absorption in dense molecular layers near dielectric or metallic boundaries.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗