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NASA NTRS1998

Method and apparatus for selectively annealing heterostructures using microwaves

The present invention discloses a process for selectively annealing heterostructures using microwaves. A heterostructure, comprised of a material having higher microwave absorption and a material having lower microwave absorption, is exposed to microwaves in the cavity. The higher microwave absorbing material absorbs the microwaves and selectively heats while the lower microwave absorbing material absorbs small amounts of microwaves and minimally heats. The higher microwave absorbing material is thereby annealed onto the less absorbing material which is thermally isolated.

Atwater, Harry A.↗

NASA NTRS1998

Method and apparatus for selectively annealing heterostructures using microwave

Atwater, Harry A.↗

NASA NTRS2002

Affecting stress in BGA by microwave radiation application

Explore the source record for details and available documents.

BGA electronics reliability stress annealing micro↗

NASA NTRS1994

Rapid Selective Annealing of Cu Thin Films on Si Using Microwaves

A major goal of the semiconductor indurstry is to lower the processing temperatures needed for interconnects in silicon integrated circuits. Typical rapid thermal annealing processes heat the film as well as the substrate, creating device problems.

silicon integrated circuits microwave thin films↗

NASA NTRS1990

The formation and annealing of circumstellar dust, as gauged by IRAS low-resolution spectra and the microwave maser chronology

By comparing IRAS mean colors and LRS spectral differences in a large sample of Mira variables with the chronological sequence for development of microwave maser emission among such stars, it appears possible to describe a dust grain formation and annealing sequence. The early time spectra are dominated by aluminum oxides, which are then overrun by the emergence of silicates. Rather than the growth of silicate mantles on aluminate cores, this sequence is interpreted as a simple result of the higher electron affinity of aluminum for oxygen, resulting in an initial abundance of AlO bonds in the underoxidized grains. Once all the Al becomes fully oxidized, the relative abundances of Al and Si dictate that the AlO signature will be swamped by the growth of the SiO stretching fundamental. The correlations among the proposed dust chronology, the increasingly thick circumstellar envelopes, and the light curve asymmetries of Mira variables are instructive for understanding the evolutionary changes occurring in such stars.

Stencel, Robert E.↗

NASA NTRS1989

Sequentially evaporated thin Y-Ba-Co-O superconducting films on microwave substrates

The development of high T sub c superconducting thin films on various microwave substrates is of major interest in space electronic systems. Thin films of YBa2Cu3O(7-Delta) were formed on SrTiO3, MgO, ZrO2 coated Al2O3, and LaAlO3 substrates by multi-layer sequential evaporation and subsequent annealing in oxygen. The technique allows controlled deposition of Cu, BaF2 and Y layers, as well as the ZrO buffer layers, to achieve reproducibility for microwave circuit fabrication. The three layer structure of Cu/BaF2/Y is repeated a minimum of four times. The films were annealed in an ambient of oxygen bubbled through water at temperatures between 850 C and 900 C followed by slow cooling (-2 C/minute) to 450 C, a low temperature anneal, and slow cooling to room temperature. Annealing times ranged from 15 minutes to 5 hrs. at high temperature and 0 to 6 hr. at 450 C. Silver contacts for four probe electrical measurements were formed by evaporation followed with an anneal at 500 C. The films were characterized by resistance-temperature measurements, energy dispersive X-ray spectroscopy, X-ray diffraction, and scanning electron microscopy. Critical transition temperatures ranged from 30 K to 87 K as a function of the substrate, composition of the film, thicknesses of the layers, and annealing conditions. Microwave ring resonator circuits were also patterned on these MgO and LaAlO3 substrates.

Valco, G. J.↗

NASA NTRS1989

Ion-implanted high microwave power indium phosphide transistors

Encapsulated rapid thermal annealing (RTA) has been used in the fabrication of InP power MISFETs with ion-implanted source, drain, and active-channel regions. The MISFETs had a gate length of 1.4 microns. Six to ten gate fingers per device, with individual gate finger widths of 100 or 125 microns, were used to make MISFETs with total gate widths of 0.75, 0.8, or 1 mm. The source and drain contact regions and the channel region of the MISFETs were fabricated using Si implants in InP at energies from 60 to 360 keV with doses of (1-560) x 10 to the 12th/sq cm. The implants were activated using RTA at 700 C for 30 sec in N2 or H2 ambients using an Si3N4 encapsulant. The high-power high-efficiency MISFETs were characterized at 9.7 GHz, and the output microwave power density for the RTA conditions used was as high as 2.4 W/mm. For a 1-W input at 9.7 GHz gains up to 3.7 dB were observed, with an associated power-added efficiency of 29 percent and output power density 70 percent greater than that of GaAs MESFETs.

Biedenbender, Michael D.↗

NASA NTRS2002

A Simulated Annealing Algorithm for the Optimization of Multistage Depressed Collector Efficiency

The microwave traveling wave tube amplifier (TWTA) is widely used as a high-power transmitting source for space and airborne communications. One critical factor in designing a TWTA is the overall efficiency. However, overall efficiency is highly dependent upon collector efficiency; so collector design is critical to the performance of a TWTA. Therefore, NASA Glenn Research Center has developed an optimization algorithm based on Simulated Annealing to quickly design highly efficient multi-stage depressed collectors (MDC).

Vaden, Karl R.↗

NASA NTRS1991

YBa2Cu3O(7-x)/Au/Nb device structures

Fabrication and testing of planar and edge geometry YBaCuO/Au/Nb superconductor/normal-metal/superconductor (SNS) device structures is described. Weak-link devices of this type serve as sensitive probes of the electrical quality of the YBaCuO/Au interface. The devices are fabricated using laser-ablated, in situ, c-axis-oriented YBaCuO thin films, with both annealed and unannealed YBaCuO/Au interfaces. The planar SNS structures are formed by sequential, in situ deposition of YBaCuO, Au, and Nb, followed by etching, planarization, and wiring electrode definition to produce junctions ranging from 5 to 20 micron on a side. Resulting RnA products are 1-10 x 10 to the -8th ohm-sq cm with critical current densities up to 5 kA/sq cm. For the edge geometry devices, the YBaCuO film edges are patterned using Ar ion milling, followed by a low energy ion cleaning step and in situ deposition of Au and Nb. Devices with areas in the 10 to the -7th to 10 to the -8th sq cm range have been fabricated with RnA products lower than 10 to the -8th ohm-sq cm and critical current densities up to 3kA/sq cm. Both types of devices show ac Josephson steps under microwave irradiation. The best results have been obtained with annealed YBaCuO/Au interfaces.

Hunt, B. D.↗

NASA NTRS1992

Superconducting Films On Microwave Dielectric Substrates

Thin films of superconductor YBa(2)Cu(3)O(7-delta), formed on microwave dielectric substrates of SrTiO3, MgO, Al2O3 coated with ZrO2, and LaAlO3. Films formed by repeated sequential desposition of layers of Cu, BaF2, and Y in electro-beam evaporator, followed by annealing in oxygen. Technique employed gives layers uniformity and reproducibility required for fabrication of microwave circuits.

Warner, J. D.↗

NASA NTRS1991

Optimal spectral windows for microwave diversity imaging

Tomographic microwave diversity imaging is analyzed using linear system theory concepts, and optimal spectral windows for data acquisition are obtained either by considering window position in the spectral domain or by using simulated annealing to find an optimal phase weighting of the object frequency response samples collected over the specified spectral window. This study provides a means of microwave image formation that is applicable under general assumptions. Results of numerical simulations and representative images reconstructed from realistic experimental microwave scattering data are given, demonstrating that the proposed approach is superior to previous image reconstruction methods.

Farhat, Nabil H.↗

NASA NTRS2008

Improving the Optical Quality Factor of the WGM Resonator

Resonators usually are characterized with two partially dependent values: finesse (F) and quality factor (Q). The finesse of an empty Fabry-Perot (FP) resonator is defined solely by the quality of its mirrors and is calculated as F=piR(exp 1/2)/(1-R). The maximum up-to-date value of reflectivity R approximately equal to 1 - 1.6 x 10(exp -6) is achieved with dielectric mirrors. An FP resonator made with the mirrors has finesse F=1.9 x 10(exp 6). Further practical increase of the finesse of FP resonators is problematic because of the absorption and the scattering of light in the mirror material through fundamental limit on the reflection losses given by the internal material losses and by thermodynamic density fluctuations on the order of parts in 109. The quality factor of a resonator depends on both its finesse and its geometrical size. A one-dimensional FP resonator has Q=2 F L/lambda, where L is the distance between the mirrors and lambda is the wavelength. It is easy to see that the quality factor of the resonator is unlimited because L is unlimited. F and Q are equally important. In some cases, finesse is technically more valuable than the quality factor. For instance, buildup of the optical power inside the resonator, as well as the Purcell factor, is proportional to finesse. Sometimes, however, the quality factor is more valuable. For example, inverse threshold power of intracavity hyperparametric oscillation is proportional to Q(exp 2) and efficiency of parametric frequency mixing is proportional to Q(exp 3). Therefore, it is important to know both the maximally achievable finesse and quality factor values of a resonator. Whispering gallery mode (WGM) resonators are capable of achieving larger finesse compared to FP resonators. For instance, fused silica resonators with finesse 2.3 x 10(exp 6) and 2.8 x 10(exp 6) have been demonstrated. Crystalline WGM resonators reveal even larger finesse values, F=6.3 x 10(exp 6), because of low attenuation of light in the transparent optical crystals. The larger values of F and Q result in the enhancement of various nonlinear processes. Low-threshold Raman lasing, optomechanical oscillations, frequency doubling, and hyperparametric oscillations based on these resonators have been recently demonstrated. Theory predicts a possibility of nearly 10(exp 14) room-temperature optical Q-factors of optical crystalline WGM resonators, which correspond to finesse levels higher than 10(exp 9). Experiments have shown numbers a thousand times lower than that. The difference occurs due to media imperfections. To substantially reduce the optical losses caused by the imperfections, a specific, multi-step, asymptotic processing of the resonator is implemented. The technique has been initially developed to reduce microwave absorption in dielectric resonators. One step of the process consists of mechanical polishing performed after high temperature annealing. Several steps repeat one after another to lead to significant reduction in optical attenuation and, as a result, to the increase of Q-factor as well as finesse of the resonator which demonstrates a CaF2 WGM resonator with F greater than 10(exp 7) and Q greater than 10(exp 11).

Savchenkov, Anatoliy↗

NASA NTRS1991

In-situ sputtering of YBCO films for microwave applications

RF magnetron sputtering from a single YBCO target onto a heated substrate (700 C) was used to obtain c-axis-oriented 1-2-3 films that are superconducting without a subsequent annealing or oxygenation step, with Tc(R = 0) as high as 88 K on MgO and LaAlO3 substrates. This process uses an 8-in-diameter target in the sputter-up configuration, with a central grounded shield to eliminate negative ion bombardment. It can reproducibly and uniformly cover substrates as large as 3-in across at rates exceeding 1 A/s. Maintaining film composition very close to stoichiometry is essential for obtaining films with good superconducting properties and surface morphology. Optimum films have critical currents of 1 MA/sq cm at 77 K. Measurements of microwave surface resistance based on a stripline resonator indicate low surface resistance for unpatterned YBCO ground planes, but excess loss and a strong power dependence in a patterned center strip.

Ballentine, P. H.↗

NASA NTRS1999

Precise Frequency Measurements Using a Superconducting Cavity Stabilized Oscillator

Many physics experiments call on improved resolution to better define the experimental results, thus improving tests of theories. Modern microwave technology combined with high-Q resonators can achieve frequency readout and control with resolutions up to a part in 10(exp 18). When the physical quantity in question in the experiment can be converted to a frequency or a change in frequency, a high-stability microwave oscillator can be applied to obtain state-of-the-art precision. In this work we describe the overall physical concepts and the required experimental procedures for optimizing a high-resolution frequency measurement system that employs a high-Q superconducting microwave cavity and a low-noise frequency synthesizer. The basic approach is to resolve the resonant frequencies of a high-Q (Q > 10(exp 10)) cavity to extremely high precision (one part in 10(exp 17)- 10(exp 18)). Techniques for locking the synthesizer frequency to a resonant frequency of the superconducting cavity to form an ultra-stable oscillator are described. We have recently set up an ultra-high-vacuum high-temperature annealing system to process superconducting niobium cavities, and have been able to consistently achieve Q > 10(exp 9). We have integrated high-Q superconducting cavities with a low-noise microwave synthesizer in a phase-locked-loop to verify the frequency stability of the system. Effects that disturb the cavity resonant frequency (such as the temperature fluctuations and mechanical vibrations) and methods to mitigate those effects are also considered. Applicability of these techniques to experiments will be discussed, and our latest experimental progress in achieving high-resolution frequency measurements using the superconducting-cavity-stabilized-oscillator will be presented.

Strayer, D. M.↗

NASA NTRS1990

Laser ablated high T(sub c) superconducting thin YBa2Cu3O(7-x) films on substrates suitable for microwave applications

The development of high temperature superconducting YBa2Cu3O(7-x) thin films on substrates suitable for microwave applications is of great interest for evaluating their applications for space radar, communication, and sensor systems. Thin films of YBa2Cu3O(7-x) were formed on SrTiO3, ZrO2, MgO, and LaAlO3 substrates by laser ablation. The wavelength used was 248 nm from a KrF excimer laser. During deposition the films were heated to 600 C in a flowing oxygen environment, and required no post annealing. The low substrate temperature during deposition with no post annealing gave films which were smooth, which had their c-axis aligned to the substrates, and which had grains ranging from 0.2 to 0.5 microns in size. The films being c-axis aligned gave excellent surface resistance at 35 GHz which was lower than that of copper at 77 K. At present, LaAlO3 substrates with a dielectric constant of 22, appears suitable as a substrate for microwave and electronic applications. The films were characterized by resistance-temperature measurements, scanning electron microscopy, and x ray diffraction. The highest critical transition temperatures (T sub c) are above 89 K for films on SrTiO3 and LaAlO3, above 88 K for ZrO2, and above 86 K for MgO. The critical current density (J sub c) of the films on SrTiO3 is above 2 x 10(exp 6) amperes/sq cm at 77 K. The T(sub c) and J(sub c) are reported as a function of laser power, composition of the substrate, and temperature of the substrate during deposition.

Warner, J. D.↗

NASA NTRS2018

Nanoscale Fabrication of Microwave Detectors from Commercially-Available CVD-Grown Monolayer Graphene

Using commercially-available monolayer graphene, synthesized by means of chemical vapor deposition, microwave power sensing elements have been nanofabricated and integrated with microwave-grade test structures suitable for on-wafer probing. The graphene, situated on a thermal oxide, was first cleaned of stray contaminants in a forming gas environment briefly held at 250 degrees Celsius using a rapid thermal annealer. Immediately following this step, the graphene was passivated with a protective aluminum oxide layer (approximately S nm in thickness). Micrometer-scale Corbino disc test structures were then fabricated in direct contact with the graphene using a self-aligned process, which relies on the fact that tetramethylammonium hydroxide develops the photoresist while removing the aluminum oxide. Graphene nanoribbons (with widths as small 400 nm) were then fabricated across the Corbino disc gaps using electron-beam writing in conjunction with a negative tone resist. The same developer exposed the majority of the graphene while defining nanometer-scale lines of photoresist stacked upon aluminum oxide. These stacks served as etch-stops while the unprotected graphene was ion-milled in an oxygen plasma. Finally, the photoresist was removed leaving behind passivated graphene nanoribbons. Damage caused by the fabrication was evaluated by comparing the Raman spectra of the grapheme before and after processing.

detectors↗

NASA NTRS1988

Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

Valco, George J.↗

NASA NTRS1991

Growth and properties of amorphous silicon films grown using pulsed-flow reactive plasma beam epitaxy

The growth and properties of a-Si:H films grown using a novel deposition technique, reactive plasma beam epitaxy, are discussed. In this technique, a remote H plasma produced in a microwave-ECR reactor is used to grow a-Si:H films at low pressures. The H ions react with SiH4 introduced near the substrate to produce the film. The flow of SiH4 is pulsed on or off, thereby achieving in-situ annealing of the film during growth by H ions and radicals. The films produced by this technique appear to have good electronic quality, and are more stable than the standard glow discharge films.

Dalal, Vikram L.↗