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Microwave conductivities of thin films of high-temperature superconductors like YBa(3)Cu(3)O(7-delta) measured by noninvasive, nondestructive microwave-power-transmission method. Measurements yield useful information on superconducting and normal states of films and contribute to evaluation of films for use in microwave devices.
Here, we developed circularly polarized light-time-resolved microwave conductivity (CPL-TRMC) for investigation of the CPL-dependent photoinduced charge carrier dynamics in chiral materials with chiroptical properties. Chiral R- or S-perylenediimide (PDI) molecular thin films were paired with handedness-sorted (6,5) and (11,-5) single-walled carbon nanotube (SWCNT) films to compose a donor (D)-acceptor (A) system for the spin-dependent charge separation process, and the D-A system was examined through linear and circular polarization-dependent steady-state and time-resolved measurements. The R-PDI-(6,5) film exhibited strong enhancement in circular dichroism (CD) and revealed a reversed transient conductivity signal, relative to the polarity of CD in CPL-TRMC measurement upon excitation of the E 11 state, which is interpreted as arising from a spin-dependent initial charge separation process. Through linear polarization-dependent flash photolysis TRMC and circular polarization-resolved femtosecond transient absorption, we could deduce that sub-picosecond intertubular charge separation upon E 11 excitation in SWCNT was responsible for the spin-dependent photoconductivity transients observed in CPL-TRMC measurements.
We report on the values of the microwave conductivity in the normal (sigma(subN)) and superconducting (sigma*=sigma(sub1)-j sigma(sub2)) states of two laser ablated YBa2CU3O7(sigma) thin films at 35 GHz, in the temperature range from 20 to 300 K. The films 0.7 and 0.4 micrometers) were deposited on LaA10(sub3) by laser ablation. The conductivity was obtained from the microwave power transmitted through the films and assuming a two-fluid model. Values of sigma(subN) approximately 2.3 X 10(exp5) S/m at room temperature for both films, and of sigma(sub1) approximately 6.3 X 10(exp5) and 4.6 X 10(exp5) S/m at temperatures around 80 K were obtained for the 0.7 and 0.4 micrometer films respectively. For sigma(sub2) values of 4.9 X 10(exp6) and 5.4 X 10(exp6) S/m were obtained for the 0.7 and 0.4 micrometer films at 80 K. The expected conductor losses and Q-factor of a superconducting ring resonator were calculated using these conductivity values. The theoretical values were then compared with the experimental results obtained for a resonator fabricated from one of these films.
Cavity perturbation techniques offer a very sensitive and highly versatile means for studying the complex microwave conductivity of a bulk material. A knowledge of the cavity coupling factor in the absence of perturbation, together with the change in the reflected power and the cavity resonance frequency shift, are adequate for the determination of the material properties. This eliminates the need to determine the Q-factor change with perturbation which may lead to appreciable error, especially in the presence of mismatch loss. The measurement accuracy can also be improved by a proper choice of the cavity coupling factor prior to the perturbation.
The discovery of high temperature superconductor oxides has raised the possibility of a new class of millimeter and microwave devices operating at temperatures considerably higher than liquid helium temperatures. Therefore, materials properties such as conductivity, current density, and sheet resistance as a function of temperature and frequency, possible anisotropies, moisture absorption, thermal expansion, and others, have to be well characterized and understood. The millimeter wave response was studied of laser ablated YBa2Cu3O(7-x)/LaAlO3 thin films as a function of temperature and frequency. In particular, the evaluation of their microwave conductivity was emphasized, since knowledge of this parameter provides a basis for the derivation of other relevant properties of these superconducting oxides, and for using them in the fabrication of actual passive circuits. The microwave conductivity for these films was measured at frequencies from 26.5 to 40.0 GHz, in the temperature range from 20 to 300 K. The values of the conductivity are obtained from the millimeter wave power transmitted through the films, using a two fluid model.
The discovery of high temperature superconductor oxides has raised the possibility of a new class of millimeter and microwave devices operating at temperatures considerably higher than liquid helium temperatures. Therefore, materials properties such as conductivity, current density, and sheet resistance as a function of temperature and frequency, possible anisotropies, moisture absorption, thermal expansion, and others, have to be well characterized and understood. The millimeter wave response of laser ablated YBa2Cu3O(7-delta)/LaAlO3 thin films was studied as a function of temperature and frequency. In particular, the evaluation of their microwave conductivity was emphasized, since knowledge of this parameter provides a basis for the derivation of other relevant properties of these superconducting oxides, and for using them in the fabrication of actual passive circuits. The microwave conductivity for these films was measured at frequencies from 26.5 to 40.0 GHz, in the temperature range from 20 to 300 K. The values of the conductivity are obtained from the millimeter wave power transmitted through the films, using a two fluid model.
Ferroelectric materials exhibit spontaneous polarization that can be switched by electric field. Beyond traditional applications as nonvolatile capacitive elements, the interplay between polarization and electronic transport in ferroelectric thin films has enabled a path to neuromorphic device applications involving resistive switching. A fundamental challenge, however, is that finite electronic conductivity may introduce considerable power dissipation and perhaps destabilize ferroelectricity itself. In this work, tunable microwave frequency electronic response of domain walls injected into ferroelectric lead zirconate titanate (PbZr 0.2 Ti 0.8 O 3 ) on the level of a single nanodomain is revealed. Tunable microwave response is detected through first-order reversal curve spectroscopy combined with scanning microwave impedance microscopy measurements taken near 3 GHz. Contributions of film interfaces to the measured AC conduction through subtractive milling, where the film exhibited improved conduction properties after removal of surface layers, are investigated. Using statistical analysis and finite element modeling, we inferred that the mechanism of tunable microwave conductance is the variable area of the domain wall in the switching volume. These observations open the possibilities for ferroelectric memristors or volatile resistive switches, localized to several tens of nanometers and operating according to well-defined dynamics under an applied field.
Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been shown in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the gigahertz (GHz) regime, where the effect of dipolar oscillation is important. Herein, an unexpected giant GHz conductivity on the order of 10 3 S m -1 is observed in certain BiFeO 3 DWs, which is about 100 000 times greater than the carrier-induced direct current (dc) conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the alternating current (ac) conduction under an excitation electric field perpendicular to the surface. Theoretical analysis reflects that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out-of-plane microwave fields and induce power dissipation, which is confirmed by the phase-field modeling. Since the contributions from mobile-carrier conduction and bound-charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano-devices for radio-frequency applications.
Two areas of research are briefly summarized. The first is concerned with calculating the conductivity of a slightly ionized gas. A method is proposed which involves an expansion of the Boltzmann collision operator (of the electron distribution function, involving the neutral gas-electron interactions) in powers of the electron-gas mass ratio. The second area of investigation focuses on the problem of a radio wave propagating through the interplanetary medium, taking account of the decreasing plasma density with distance from the sun.
An apparatus is provided for use in determining surface conductivity of a flat or shaped conductive material at microwave frequencies. A plate has an electrically conductive surface with first and second holes passing through the plate. An electrically conductive material under test (MUT) is maintained in a spaced apart relationship with the electrically conductive surface of the plate by one or more nonconductive spacers. A first coupling loop is electrically shielded within the first hole while a second coupling loop is electrically shielded within the second hole. A dielectric resonator element is positioned between the first and second coupling loops, while also being positioned closer to the MUT than the electrically conductive surface of the plate. Microwave energy at an operating frequency f is supplied from a signal source to the first coupling loop while microwave energy received at the second coupling loop is measured. The apparatus is capable of measuring the Q-factor of the dielectric resonator situated in the 'cavity' existing between the electrically conductive surface of the plate and the MUT. Surface conductivity of the electrically conductive surface can be determined via interpolation using: 1 ) the measured Q-factor with the electrically conductive surface in place, and 2) the measured Q-factor when the MUT is replaced with reference standards having known surface conductivities.
An apparatus is provided for use in determining surface conductivity of a flat or shaped conductive material at microwave frequencies. A plate has an electrically conductive surface with first and second holes passing through the plate. An electrically conductive material under test (MUT) is maintained in a spaced apart relationship with the electrically conductive surface of the plate by one or more non-conductive spacers. A first coupling loop is electrically shielded within the first hole while a second coupling loop is electrically shielded within the second hole. A dielectric resonator element is positioned between the first and second coupling loops, while also being positioned closer to the MUT than the electrically conductive surface of the plate. Microwave energy at an operating frequency f is supplied from a signal source to the first coupling loop while microwave energy received at the second coupling loop is measured. The apparatus is capable of measuring the Q-factor of the dielectric resonator situated in the cavity existing between the electrically conductive surface of the plate and the MUT. Surface conductivity of the electrically conductive surface can be determined via interpolation using: 1) the measured Q-factor with the electrically conductive surface in place, and 2) the measured Q-factor when the MUT is replaced with reference standards having known surface conductivities.
Simple features in complex hybrid inorganic–organic crystalline materials provide opportunities for targeted discovery of materials with desired optoelectronic properties. In this study, we report the structure and optoelectronic properties of isostructural (NH 3 (CH 2 ) 7 NH 3 ) 2 Bi 2 I 10 and (NH 3 (CH 2 ) 7 NH 3 ) 2 Sb 2 I 10 . The crystal structures are characterized by corner-connected metal-iodide octahedral chains that form a cubic close-packed iodine inorganic framework. Variable temperature UV–visible diffuse reflectance spectroscopy reveals stark contrasts in the onset of absorption and color changes between the [MX6]3– based structures, due to differences in the interaction of the (NH 3 (CH 2 ) 7 NH 3 ) 2+ organic ammonium cation and the iodine packing of the inorganic framework. Density functional theory (DFT) calculations reveal flat bands reflective of the pseudo-1D crystal structure. Dark microwave conductivity (DMC) and time-resolved microwave conductivity (TRMC) reveal an excitonic character with long carrier lifetimes, consistent with the electronically confined octahedral chains. Comparison of the structural features with those of other diammonium-containing crystals reveals that diammoniumheptane can substitute into structures, displacing inorganic octahedra while retaining a close-packed anion framework. This provides a means for targeting new hybrid materials in which “vacancy-ordering” provides a crystal chemical approach for targeting desirable optoelectronic properties.
Ordering vacancies in hybrid Sn(II) halide semiconductors provides a strategy for preventing uncontrolled oxidation and formation of mobile holes. In this study, we report the structure and optical and electronic properties of (NH 3 (CH 2 ) 7 NH 3 ) 2 Sn 3 I 10 , a vacancy-ordered perovskite derivative with three-dimensional inorganic connectivity. The crystal structure resembles that of a Dion–Jacobson layered perovskite derivative, but with [SnI 5 ] square pyramids bridging the layers. UV–vis diffuse reflectance spectroscopy reveals a sharp onset of light absorption at 1.86(1) eV with the photoluminescence emission maximum at 1.90(1) eV. However, the maximum excitation occurs from 3.42 to 3.81 eV (325 to 370 nm), revealing a significant Stokes shift of 1.3 eV. The electronic properties determined from dark and time-resolved microwave conductivity measurements reveal a minimum carrier mobility of 4.3 × 10 –2 cm 2 V –1 s –1 and a maximum carrier density of 5.96 × 10 16 cm –3 , a uniquely low value for a hybrid Sn(II) halide semiconductor. The transport behavior in combination with first-principles calculations of the electronic band structure and dielectric permittivity suggest polaron-mediated electronic transport, yet the photogenerated carriers have a fast and fluence-dependent nonradiative recombination rate, suggestive of localized “defect-like” states at the band edge. The observed photoluminescence is most consistent with single-ion-like behavior of an asymmetric Sn(II) environment. Together, these results suggest that defect ordering presents a strategy for the reduction of mobile charge carriers at equilibrium.
Soil mapping for large or small areas done rapidly. Technique requires simple radiometric measurements of L-band (15 to 30 cm) and thermal infrared emissions from ground within 2 days after saturation of surface. Technique based on observation that correlation exists between L-band emissivity and hydraulic conductivity of soil.
Immersing polymer solar cells in aqueous electrolyte for photoelectrochemical (PEC) hydrogen production is likely to cause photophysical changes that could present both challenges and opportunities for engineering functional and durable devices. Herein we study the bulk heterojunction blend poly(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b']dithiophene-2,6-diyl)-alt-(2-(((2-ethylhexyl)oxy)carbonyl)-3-fluorothieno[3,4-b]thiophene-4,6-diyl):poly(N,N'-di(2-octyldodecyl)naphthalene-1,8:4,5-bis(dicarboximide)-2,6-diyl)-alt-(2,2-bithiophene-5,5'-diyl) (PTB7-Th:N2200) excited-state dynamics in electrolyte from femtosecond to millisecond time scales using pump-probe microwave conductivity and absorption spectroscopy. While the blend swells very little, electrolyte exposure increases the microwave-frequency mobility and possibly the yield of photogenerated charges while also decreasing crystallinity. These results indicate an enhancement in key performance metrics, implying that any limitations on the performance of PEC test devices do not arise from active layer-electrolyte interactions. For the PTB7-Th:N2200 blend or similar photocathode systems, our results indicate that improving the interfacial kinetics and/or the carrier lifetime should be prioritized, not protecting the active layer from the electrolyte. Since this observation may not be universal to all polymer systems, future research should focus on identifying their limiting photophysical processes. electrolyte.
Very lossy powdered iron material, in the lining of a polyester resin, replaces the dielectric material in the short coaxial transmission line of a simple filter. The lossy material absorbs microwave signals along high voltage power supply leads.
Presented by NETL at Reactive CO2 Capture: Process Integration for the New Carbon Economy Workshop, 02/20
Conductivity in microwave permalloy thin films without external magnetic field comparing Fuchs-Sondheimer theory