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Results for “microwave photoconductivity”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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10 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Phase and amplitude characteristics of InP:Fe modified interdigitated gap photoconductive microwave switches

The transmission amplitude and phase characteristics of InP:Fe modified interdigitated gap photoconductive microwave switches are reported. Measurements in the 0.1-1 GHz frequency range show that the phase is shifted about 90 deg and that the corresponding change in amplitude ranges from 43 dB at 0.1 GHz to 23 dB at 1 GHz when the illumination-induced conductance is switched from a low OFF-state value (aboit 4 x 10 to the -8 S) to a high ON-state value (5 mS). The observed characteristics can be described by a phase-shifting region and an amplitude modulation region. In the phase-shifting region the phase strongly depends on the conductance, and the amplitude is almost constant. In the amplitude modulation region both the amplitude and the phase depend on the conductance but the effect on the amplitude is much more pronounced. A lumped-element model describing the device performance is presented. It is concluded that these optoelectronic microwave switching devices are suitable for high-speed amplitude modulation but are not promising as high-speed phase shifters.

Andersson, Ingmar L.↗
NASA NTRS1989

Microwave response of a HEMT photoconductive detector

Interdigitated photoconductive detectors with 5-micron geometry have been fabricated on HEMT material and their optical response characteristics at 820 nm have been examined at dc and in the frequency range of 2-8 GHz. These have been compared with characteristics of similar 1-micron devices on MESFET material. The shapes of the frequency responses were found to differ, but the useful bandwidth of both types of devices was found to be similar.

Claspy, P. C.↗
NASA NTRS1989

Microwave characteristics of GaAs MMIC integratable optical detectors

Interdigitated photoconductive detectors were fabricated on microwave device structures, making them easily integratable with Monolithic Microwave Integrated Circuits (MMIC). Detector responsivity as high as 2.5 A/W and an external quantum efficiency of 3.81 were measured. Response speed was nearly independent of electrode geometry, and all detectors had usable response at frequencies to 6 GHz. A small signal model of the detectors based on microwave measurements was also developed.

Claspy, Paul C.↗
NASA NTRS1985

High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

Pseudomorphic In0.15Ga0.85As/A10.15Ga0.85As modulation-doped field effect transistors (MODFET's) exhibiting extremely good dc characteristics have been successfully fabricated. dc transconductance in these strained-layer structures of 270 mS/mm was measured for 1-micron gate, normally-on devices at 300 K. Maximum drain current levels are 290 mA/mm, with excellent pinch-off and saturation characteristics. The transconductance increased to 360 mS/mm at 77 K while no persistent photoconductivity or drain collapse was observed. Preliminary microwave results indicate a 300-K current gain cutoff frequency of about 20 GHz. These results are equivalent to the best GaAs/AlGaAs MODFET results and are due in part to the improved transport properties and carrier confinement in the InGaAs quantum well.

Ketterson, A.↗
NASA NTRS1991

Material properties and device evaluations of ECR-deposited a-Si:H and a-SiC:H films

Device-quality a-Si:H and a-SiC:H films have been deposited using electron cyclotron resonance (ECR) microwave plasmas of SiH4, CH4, and H2 mixtures. Typical material properties of ECR-deposited, photosensitive a-Si:H films are: (1) high photosensitivity up to 2 x 106 with a photoconductivity of 10 exp -5 to 10 exp -4/(Ohm-cm), (2) a Tauc gap of 1.75 to 1.85 eV, (3) an Urbach slope of 50-60 meV determined by the constant photocurrent method, and (4) an integrated defect density of 1-2 x 10 exp 16/cu cm determined by junction capacitance measurements. Highly conductive, p-type a-SiC:H films have been produced by ECR plasmas with a conductivity of 0.2/(Ohm-cm).

Shing, Y. H.↗
NASA NTRS1979

Microwave systems analysis, solar power satellite

Various alternative active approaches to achieving aand maintaining flatness for the microwave power transmission system (MPTS) were studied. A baseline active alignment scheme was developed which includes subarray attachment mechanisms, height and tilting adjustments, service corridors, a rotating laser beam reference system, monopulse pointing techniques, and the design of a beam-centering photoconductive sensor.

Source record↗
NASA NTRS1980

An active alignment scheme for the MPTS array

In order to maximize the efficiency of the microwave power transmission system (MPTS), the surface of the array antenna must be extremely flat, which is difficult to achieve using passive techniques over the 1 km dimensions of the array. In order to achieve and maintain this required flatness, a rotating laser beam used for leveling applications on Earth was utilized as a reference system. A photoconductive sensor with a reflective collecting surface was used to determine the displacement and polarity of any misalignment and automatically engage a stepping motor to drive a variable-length mechanism to make the necessary corrections. Once aligned, little power is dissipated since a nulling bridge circuit that centers on the beam is used, an important alignment feature since even laser beams broaden considerably at 1 km distances.

Iwasaki, R.↗
NASA NTRS1973

Methods of measurement for semiconductor materials, process control, and devices

This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include design of a plan to provide standard silicon wafers for four-probe resistivity measurements for the industry, publication of a summary report on the photoconductive decay method for measuring carrier lifetime, publication of a comprehensive review of the field of wire bond fabrication and testing, and successful completion of organizational activity leading to the establishment of a new group on quality and hardness assurance in ASTM Committee F-1 on Electronics. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers in silicon; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Bullis, W. M.↗