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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data

The semiconductor minority carrier lifetime contains information about several important material properties, including Shockley–Read–Hall defect levels/concentrations and radiative/Auger recombination rates, and the complex relationships between these parameters produce a non-trivial temperature-dependence of the measured lifetime. It is tempting to fit temperature-dependent lifetime data to extract the properties of the Shockley–Read–Hall recombination centers; however, without a priori knowledge of the distribution of the Shockley–Read–Hall states across the bandgap, this fit problem is under-constrained in most circumstances. Shockley–Read–Hall lifetime data are not well-suited for the extraction of Shockley–Read–Hall defect levels but can be used effectively to extract minority carrier recombination lifetimes. The minority carrier recombination lifetime is observed at temperatures below 100 K in a Si-doped n-type InGaAs/InAsSb superlattice, and deviation from its expected temperature-dependence indicates that the capture cross section of the defect associated with Si-doping has an activation energy of 1.5 meV or a characteristic temperature of 17 K. This lower temperature regime is also preferrable for the analysis of the physics of defect introduction with displacement-damage-generating particle irradiation.

Physics↗
NASA NTRS1981

Improving MOS minority-carrier lifetime

Fluorine implantation increases minority-carrier lifetime in silicon by factor of 100, enhancing power efficiency in MOS applications. Implantation does not increase microdefects at silicon surface when thin oxide layers are grown, and process gathers existing impurities near surface without adversely affecting MOS electrical parameters. With these advantages, fluorine may be left on wafer surfaces after processing.

Cockrum, R. H.↗
NASA NTRS1987

Method and apparatus for measuring minority carrier lifetime in a direct band-gap semiconductor

A direct band-gap semiconductor is exposed to intensity-modulated photon radiation having a characteristic energy at least as great as the energy gap of the semiconductor. This produces a time dependent concentration of excess charge carriers through the material, producing a luminescence signal modulated at the same frequency as the incident radiation but shifted in phase by an amount related to the lifetime of minority carriers. In a preferred embodiment, the phase shift of the luminescence signal is determined by transforming it to a modulated electrical signal and mixing the electrical signal with a reference signal modulated at the same frequency and having a phase which is known relative to the incident radiation. Minority carrier lifetime is calculated by integrating a direct current component of the mixed signal (F sub dc) over a 2 pi range in phase of the reference signal.

Vonroos, Oldwig↗
NASA NTRS1995

Minority-carrier lifetime in InP as a function of light bias

Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.

Yater, Jane A.↗
NASA NTRS1991

Minority carrier lifetime in indium phosphide

Transient photoluminescence is used to measure the minority carrier lifetime on n-type and p-type InP wafers. The measurements show that unprocessed InP wafers have very high minority carrier lifetimes. Lifetimes of 200 ns and 700 ns were observed for lightly-doped p- and n-type material respectively. Lifetimes over 5 ns were found in heavily doped n-type material.

Jenkins, Phillip↗
NASA NTRS1981

Analysis of the photo voltage decay /PVD/ method for measuring minority carrier lifetimes in P-N junction solar cells

The photo voltage decay (PVD) method for the measurement of minority carrier lifetimes in P-N junction solar cells with cell thickness comparable to or even less than the minority carrier diffusion length is examined. The method involves the generation of free carriers in the quasi-neutral bulk material by flashes of light and the monitoring of the subsequent decay of the induced open-circuit voltages as the carriers recombine, which is dependent on minority carrier recombination lifetime. It is shown that the voltage versus time curve for an ordinary solar cell (N(+)-P junction) is proportional to the inverse minority carrier lifetime plus a factor expressing the ratio of diffusion length to cell thickness. In the case of an ideal back-surface-field cell (N(+)-P-P(+) junction) however, the slope is directly proportional to the inverse minority carrier lifetime. It is noted that since most BSF cells are not ideal, possessing a sizable back surface recombination velocity, the PVD measurements must be treated with caution and supplemented with other nonstationary methods.

Von Roos, O.↗
NASA NTRS1982

Mathematical analysis of the Photovoltage Decay (PVD) method for minority carrier lifetime measurements

When the diffusion length of minority carriers becomes comparable with or larger than the thickness of a p-n junction solar cell, the characteristic decay of the photon-generated voltage results from a mixture of contributions with different time constants. The minority carrier recombination lifetime tau and the time constant l(2)/D, where l is essentially the thickness of the cell and D the minority carrier diffusion length, determine the signal as a function of time. It is shown that for ordinary solar cells (n(+)-p junctions), particularly when the diffusion length L of the minority carriers is larger than the cell thickness l, the excess carrier density decays according to exp (-t/tau-pi(2)Dt/4l(2)), tau being the lifetime. Therefore, tau can be readily determined by the photovoltage decay method once D and L are known.

Vonroos, O. H.↗
NASA NTRS1998

Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p+n Diodes Measured by Reverse Recovery Switching Transient Analysis

Minority carrier lifetimes in epitaxial 4H-SiC p-n junction diodes were measured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t(sub s)) as a function of initial ON-state forward current (I(sub f)) and OFF-state reverse current (I(sub R)) followed well-documented trends which have been observed for decades in silicon p-n rectifiers. Average minority carrier (hole) lifetimes (tau(sub p)) calculated from plots of t(sub s) vs I(sub R)/I(sub F) strongly decreased with decreasing device area. Bulk and perimeter components of average hole lifetimes were separated by plotting tau(sub p) as a function of device perimeter-to-area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 square mm. The bulk minority carrier (hole) lifetime extracted from the 1/Tau(sub p) vs P/A plot is approximately 0.7 microns, well above the 60 ns to 300 ns average lifetimes obtained when perimeter recombination effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.

Neudeck, Philip G.↗
NASA NTRS1998

Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p(+)-n Diodes Measured by Reverse Recovery Switching Transient Analysis

Minority carrier lifetimes in epitaxial 4H-SiC p(+)-n junction diodes were measured via an analysis of reverse recovery switching characteristics. Behavior of reverse recovery storage time (t(s)) as a function of initial ON-state forward current (I(F)) and OFF-state reverse current (I(R)) followed well-documented trends which have been observed for decades in silicon p-n rectifiers. Average minority carrier (hole) lifetimes (tau(p)) calculated from plots of t(s) vs I(R)/I(F) strongly decreased with decreasing device area. Bulk and perimeter components of average hole lifetimes were separated by plotting 1/tau(p) as a function of device perimeter-to- area ratio (P/A). This plot reveals that perimeter recombination is dominant in these devices, whose areas are all less than 1 sq mm. The bulk minority carrier (hole) lifetime extracted from the 1/tau(p) vs P/A plot is approximately 0.7 micro-s, well above the 60 ns to 300 ns average iit'eptimes obtained when perimeter recombination effects are ignored in the analysis. Given the fact that there has been little previous investigation of bipolar diode and transistor performance as a function of perimeter-to-area ratio, this work raises the possibility that perimeter recombination may be partly responsible for poor effective minority carrier lifetimes and limited performance obtained in many previous SiC bipolar junction devices.

Neudeck, Philip G.↗
DOE OSTI2020

Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi

Time-resolved photoluminescence measurements are reported for InAsSbBi alloys grown by molecular beam epitaxy with Bi mole fractions ranging from 0 to 0.8%, yielding minority carrier lifetimes on the order of hundreds of nanoseconds. The minority carrier lifetimes extracted from the time-resolved photoluminescence measurements are comparable to those of lattice-matched InAsSb grown at the same respective temperatures. Nomarski imaging shows that smooth, droplet-free surface morphologies are obtained in 1 μm thick InAsSbBi epilayers grown at temperatures between 360 and 380 °C. The alloy composition-dependent bandgap energies for the InAsSbBi samples are determined from temperature-dependent steady-state photoluminescence measurements and compared with the tetragonal distortion measured by x-ray diffraction to determine the Sb and Bi mole fractions of each sample. The minority carrier lifetime and the achievable extension of the InAsSb(Bi) cut-off wavelength are analyzed as functions of alloy composition and compared with the performance of InAsSb layers with similar growth parameters.

Petluru, Priyanka (ORCID:0000000257154284)↗
NASA NTRS1986

Rapid thermal processing of Czochralski silicon substrates: Defects, denuded zones, and minority carrier lifetime

Rapid thermal processing (RTP) of Czochralski (Cz) silicon substrates is discussed with its attendant effects on defects, denuded zones, and minority carrier lifetime. Preferential chemical etching and X-ray topography was used to delineate defects which were subsequently correlated with minority carrier lifetime; determined by a pulse metallo-organic decompositon (MOD) test device. The X-ray delineation of grown-in defects was enhanced by a lithium decoration procedure. Results, thus far, show excellent correlation between process-induced defects.

Rozgonyi, G. S.↗
NASA NTRS1985

The determination of minority carrier lifetimes in direct band-gap semiconductors by monitoring intensity-modulated luminescence radiation

When an extrinsic, direct band-gap semiconductor sample is irradiated by photons of an energy higher than the energy of the band gap between valence and conduction bands, excess electron-hole pairs are generated which, while diffusing through the sample, produce luminescence via radiative recombination. If, furthermore, the intensity of the impinging beam of photons is modulated sinusoidally, the luminescence radiation escaping from the sample will be phase shifted with respect to the original photon beam in a characteristic way. It will be shown that by measuring the phase shift at different modulation frequencies, the Shockley-Read-Hall lifetime of minority carriers may be ascertained. The method is nondestructive inasmuch as there is no need to fabricate p-n junctions or Ohmic contacts, nor is it necessary to remove already existing Ohmic contacts of angle lap the surface, etc., procedures often needed when determining lifetimes with the scanning electron microscope (in which case a p-n junction must be present).

Von Roos, O.↗
NASA NTRS2014

Minority Carrier Lifetime Studies of Narrow Bandgap Antimonide Superlattices

In this study optical modulation response and photoluminescence spectroscopy were used to study mid-wave Ga-free InAs/InAsSb superlattices. The minority carrier lifetimes in the different samples varied from 480 ns to 4700 ns, partly due to different background doping concentrations. It was shown that the photoluminescence intensity can be used as a fast non-destructive tool to predict the material quality. It was also demonstrated that it is crucial to use a low excitation power in the photoluminescence measurements in order to get a good correlation between the photoluminescence intensity and the minority carrier lifetime.

minority carrier lifetime↗
NASA NTRS1988

A chemical/microwave technique for the measurement of bulk minority carrier lifetime in silicon wafers

A chemical/microwave technique for the measurement of bulk minority carrier lifetime in silicon wafers is described. This method consists of a wet chemical treatment (surface cleaning, oxidation in solution, and measurement in HF solution) to passivate the silicon surfaces, a laser diode array for carrier excitation, and a microwave bridge measuring system which is more sensitive than the microwave systems used previously for lifetime measurement. Representative experimental data are presented to demonstrate this technique. The result reveals that this method is useful for the determination of bulk lifetime of commercial silicon wafers.

Luke, Keung L.↗
NASA NTRS1988

Minority-carrier lifetime analysis of silicon epitaxy and bulk crystals with nonuniformly distributed defects

Existing analyses of the pulsed response of an MOS capacitor for minority-carrier lifetime determination result in a lifetime value averaged over most of the depletion region width. In this report, an analysis of MOS C-t data is presented that enables minority-carrier generation lifetime to be plotted as a function of depletion region depth. The technique is shown to be useful for samples with bulk or buried interfacial layer defects that have defect-free surfaces. Data are presented for intrinsically gettered bulk crystals and extrinsically gettered Si(2-pct Ge) epitaxial layers with misfit dislocations. In addition, for samples that do have uniform lifetimes, the measurement time required for determining carrier lifetime has been reduced by more than an order of magnitude.

Radzimski, Zbignew↗
NASA NTRS1977

Determination of minority-carrier lifetime and surface recombination velocity with high spacial resolution

Quantitative analysis of the electron beam induced current in conjunction with high-resolution scanning makes it possible to evaluate the minority-carrier lifetime three dimensionally in the bulk and the surface recombination velocity two dimensionally, with a high spacial resolution. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two-dimensional mapping of the surface recombination velocity of phosphorus-diffused silicon diodes is presented as well as a three-dimensional mapping of the changes in the minority-carrier lifetime in ion-implanted silicon.

Watanabe, M.↗
NASA NTRS2012

Minority Carrier Lifetime and Photoluminescence Studies of Antimony-Based Superlattices

In this paper, we have used the OMR technique to study the minority carrier lifetimes in three InAs/GaSb-photoluminescence (PL) structures with different number of periods in the absorber: 300, 400 and 600 periods respectively. The feasibility of using a visible 643 nm laser source with short penetration depth for lifetime measurements was studied by comparing the achieved results to measurements performed on the same samples with a 1550 nm IR laser source, which penetrates much deeper into the sample. Despite the differences in excitation wavelengths and penetration depths, the results from both measurements were very similar. This indicates that the diffusion length is long enough to facilitate a homogeneous distribution of excess carriers in the material.

photodetector↗