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Molecular-beam time-of-flight spectroscopy applied to molecular-beam performance measurements
Time of flight spectroscopic measurements in arc heated supersonic molecular beam using algebraic relations, sensing modulated beam by Orbitron type detector
Ultra high resolution molecular beam cars spectroscopy with application to planetary atmospheric molecules
The measurement of high resolution pulsed and continuous wave (CW) coherent anti-Stokes Raman spectroscopy (CARS) measurements in pulsed and steady state supersonic expansions were demonstrated. Pulsed molecular beam sources were characterized, and saturation of a Raman transition and, for the first time, the Raman spectrum of a complex molecular cluster were observed. The observation of CW CARS spectra in a molecular expansion and the effects of transit time broadening is described. Supersonic expansion is established as a viable technique for high resolution Raman spectroscopy of cold molecules with resolutions of 100 MH2.
Pure rotational excitation in CO/plus/-Ar interactions by ion beam collision spectroscopy
Molecular rotational excitation during CO ion-Ar interactions by ion beam collision spectroscopy, observing energy loss spectra
Molecular-beam time-of-flight spectroscopy.
Speed distribution and density of molecular beam from time domain measurements of propagated beam perturbations, discussing gate functions
Pulsed supersonic molecular-beam coherent anti-Stokes Raman spectroscopy of C2H2
A high-resolution coherent anti-Stokes Raman spectrum of C2H2 in a pulsed molecular beam was obtained and the resolved Q-branch spectrum was used to study the properties of the expansion. Cluster formation limited the minimum observed rotational temperature in the pure-acetylene expansion to 30 K.
High Throughput, High Yield Fabrication of High Quantum Efficiency Back-Illuminated Photon Counting, Far UV, UV, and Visible Detector Arrays
In this paper we discuss the high throughput end-to-end post fabrication processing of high performance delta-doped and superlattice-doped silicon imagers for UV, visible, and NIR applications. As an example, we present our results on far ultraviolet and ultraviolet quantum efficiency (QE) in a photon counting, detector array. We have improved the QE by nearly an order of magnitude over microchannel plates (MCPs) that are the state-of-the-art UV detectors for many NASA space missions as well as defense applications. These achievements are made possible by precision interface band engineering of Molecular Beam Epitaxy (MBE) and Atomic Layer Deposition (ALD).
Electronics Laboratory Research Activities Quarterly Progress Report for the Period Ending 31 May 1968
Electronics research - molecular beams, microwave spectroscopy and solid state electronics, plasma dynamics, radio astronomy, optical and acoustic waves, and communications science
A molecular beam investigation of the oxidation of CO on Pt/9/111/x/100//
The CO oxidation on Pt/9(111)x(100)/ was studied by molecular beam relaxation spectroscopy (MBRS). The reaction proceeded via the reaction of adsorbed CO and adsorbed oxygen. No evidence for direct reactive collisions between gaseous CO and adsorbed atomic oxygen was seen. The second order rate constant was measured by linearizing the reaction system to be 10 to the -7th exp/-(9700 kcal/mole)RT/ per sq cm s. The relatively low pre-exponential factor was explained by transition state theory on the basis of a high partition function for adsorbed carbon monoxide obtained previously from studies of CO desorption on this surface.
Ultra-sensitive high-precision spectroscopy of a fast molecular ion beam
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Optical signatures of molecular particles via mass-selected cluster spectroscopy
A new molecular beam apparatus was developed to study optical absorption in cold (less than 100 K) atomic clusters and complexes produced by their condensation with simple molecular gases. In this instrument, ionized clusters produced in a laser vaporization nozzle source are mass selected and studied with photodissociation spectroscopy at visible and ultraviolet wavelengths. This new approach can be applied to synthesize and characterize numerous particulates and weakly bound complexes expected in planetary atmospheres and in comets.
Mass and phase spectrometry in modulated beam experiments
Modulated molecular beam mass and phase spectroscopy applications in hot oxygen radiative attachment, crossed beam chemical kinetics and neutrals clustering in free jets
A Laboratory and Theoretical Study of Silicon Hydroxide SiOH
The rotational spectrum of the triatomic free radical SiOH in its X 2A' ground electronic state has been observed in a supersonic molecular beam by Fourier transform microwave spectroscopy. The fundamental (10,1 yields 00,0) transition has been detected for normal SiOH and for three rare isotopic species: (30)SiOH, Si(18)OH, and SiOD. The same transition has also been observed in two of three excited vibrational states, v2 and v3, for the most abundant species. Precise spectroscopic constants, including those that describe the effective spin doubling and hydrogen hyperfine structure, have been derived for each isotopic species or vibrational state. To complement the laboratory work, theoretical calculations of the structure, dipole moment, and energies of the X 2A' and low-lying 1 2A'' states have also been undertaken at the coupled cluster level of theory. In agreement with theoretical predictions, we conclude from the hyperfine constants that SiOH is a best described as a pi-type radical, with the unpaired electron localized on a p orbital on the silicon atom. Assuming a bond angle of 118.5 deg, the Si-O bond length is 1.647(2) Angstroms and the O-H bond length is 0.969(4) Angstrom.
Electron beam diagnostics.
Spectroscopic electron beam diagnostic technique, examining negligible effect elevated vibrational temperatures have on measured rotational temperatures of molecular nitrogen
Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems
In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species concentration, temperature, ion energy distribution, and electron number density. A wide variety of diagnostic techniques are under development through this consortium grant to measure these parameters. including molecular beam mass spectrometry (MBMS). Fourier transform infrared (FTIR) spectroscopy, broadband ultraviolet (UV) absorption spectroscopy, a compensated Langmuir probe. Additional diagnostics. Such as microwave interferometry and microwave absorption for measurements of plasma density and radical concentrations are also planned.
Slow-Positron Generator For Studying Polymer Films
Aspects of molecular structures probed by positron-annihilation spectroscopy (PAS). Slow-positron-beam generator suitable for PAS measurements in thin polymer films. Includes Na22 source of positrons and two moderators made of well-annealed tungsten foil. With proper choice of voltage, positrons emitted by inward-facing surfaces of moderators made to stop in polymer films tested.
Deep-level transient spectroscopy of Al(x)Ga(1-x)As/GaAs using nondestructive acousto-electric voltage measurement
The amplitude and the transient time constant of the acoustoelectric voltage were measured as a function of temperature to determine the activation energy of deep levels in Al(x)Ga(1-x)As/GaAs grown by molecular-beam epitaxy. In comparison to other methods based on monitoring the capacitance transient, deep-level transient spectroscopy has several advantages. The technique is nondestructive and highly sensitive, and, because of the dependence of the polarity of the acoustoelectric voltage on the carrier type, it yields information about the charge of the transient carriers and the type of deep traps involved in the release or trapping of these carriers.
Ballistic electron emission microscopy and spectroscopy of Au/GaAs interfaces
This paper presents the first Schottky barrier results for the Au/GaAs(100) interface prepared completely in situ on GaAs grown by molecular-beam epitaxy. The resulting interface displays unexpected properties which can be interpreted in terms of enhanced electrode interdiffusion. In addition, the capability of molecular-beam epitaxy for in situ processing enables the stabilization of this interface against diffusion and allows the formation of a Au/GaAs system with nearly ideal properties. Newly developed ballistic electron spectroscopy and imaging techniques demonstrate that the heterogeneity present at the interface of Au/GaAs(100) fabricated on chemically treated GaAs substrates is removed.