Search NASA⌕ Search

SEARCH · Search NASA

Results for “mos”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Comparing the Ocean Color Measurements Between MOS and SeaWiFS: A Vicarious Intercalibration Approach for MOS

One of the primary goals of the NASA Sensor Intercomparison and Merger for Biological and Interdisciplinary Oceanic Studies (SIMBIOS) project is to develop methods for meaningful comparison and possible merging of data products from multiple ocean color missions. The Modular Optoelectronic Scanner (MOS) is a German instrument that was launched in the spring of 1996 on the Indian IRS-P3 satellite. With the successful launch of NASA's Sea-viewing Wide Field-of-view Sensor (SeaWiFS) in the summer of 1997, there are now two ocean color missions in concurrent operation and there is interest within the scientific community to compare data from these two sensors. In this paper, we describe our efforts to retrieve ocean optical properties from both SeaWiFS and MOS using consistent methods. We first briefly review the atmospheric correction, which removes more than 90% of the observed radiances in the visible, and then describe how the atmospheric correction algorithm used for the SeaWiFS data can be modified for application to other ocean color sensors. Next, since the retrieved water-leaving radiances in the visible between MOS and SeaWiFS are significantly different, we developed a vicarious intercalibration method to recalibrate the MOS spectral bands based on the optical properties of the ocean and atmosphere derived from the coincident SeaWiFS measurements. We present and discuss the MOS retrieved ocean optical properties before and after the vicarious calibration, and demonstrate the efficacy of this approach. We show that it is possible and efficient to vicariously intercalibrate sensors between one and another.

Wang, Menghua↗
NASA NTRS2012

Re-Engineering the Mission Operations System (MOS) for the Prime and Extended Mission

One of the most challenging tasks in a space science mission is designing the Mission Operations System (MOS). Whereas the focus of the project is getting the spacecraft built and tested for launch, the mission operations engineers must build a system to carry out the science objectives. The completed MOS design is then formally assessed in the many reviews. Once a mission has completed the reviews, the Mission Operation System (MOS) design has been validated to the Functional Requirements and is ready for operations. The design was built based on heritage processes, new technology, and lessons learned from past experience. Furthermore, our operational concepts must be properly mapped to the mission design and science objectives. However, during the course of implementing the science objective in the operations phase after launch, the MOS experiences an evolutional change to adapt for actual performance characteristics. This drives the re-engineering of the MOS, because the MOS includes the flight and ground segments. Using the Spitzer mission as an example we demonstrate how the MOS design evolved for both the prime and extended mission to enhance the overall efficiency for science return. In our re-engineering process, we ensured that no requirements were violated or mission objectives compromised. In most cases, optimized performance across the MOS, including gains in science return as well as savings in the budget profile was achieved. Finally, we suggest a need to better categorize the Operations Phase (Phase E) in the NASA Life-Cycle Phases of Formulation and Implementation

Extended Mission↗
NASA NTRS2010

MOS 2.0: The Next Generation in Mission Operations Systems

A Mission Operations System (MOS) or Ground System constitutes that portion of an overall space mission Enterprise that resides here on Earth. Over the past two decades, technological innovations in computing and software technologies have allowed an MOS to support ever more complex missions while consuming a decreasing fraction of Project development budgets. Despite (or perhaps, because of) such successes, it is routine to hear concerns about the cost of MOS development. At the same time, demand continues for Ground Systems which will plan more spacecraft activities with fewer commanding errors, provide scientists and engineers with more autonomous functionality, process and manage larger and more complex data more quickly, all while requiring fewer people to develop, deploy, operate and maintain them. One successful approach to such concerns over this period is a multimission approach, based on the reuse of portions (most often software) developed and used in previous missions. The Advanced Multi-Mission Operations System (AMMOS), developed for deep-space science missions, is one successful example of such an approach. Like many computing-intensive systems, it has grown up in a near-organic fashion from a relatively simple set of tools into a complexly interrelated set of capabilities. Such systems, like a city lacking any concept of urban planning, can and will grow in ways that are neither efficient nor particularly easy to sustain. To meet the growing demands and unyielding constraints placed on ground systems, a new approach is necessary. Under the aegis of a multi-year effort to revitalize the AMMOS's multimission operations capabilities, we are utilizing modern practices in systems architecting and model-based engineering to create the next step in Ground Systems: MOS 2.0. In this paper we outline our work (ongoing and planned) to architect and design a multimission MOS 2.0, describe our goals and measureable objectives, and discuss some of the benefits that this top-down, architectural approach holds for creating a more flexible and capable MOS for Missions while holding the line on cost.

ground systems↗
NASA NTRS2011

MOS 2.0: Modeling the Next Revolutionary Mission Operations System

Designed and implemented in the 1980's, the Advanced Multi-Mission Operations System (AMMOS) was a breakthrough for deep-space NASA missions, enabling significant reductions in the cost and risk of implementing ground systems. By designing a framework for use across multiple missions and adaptability to specific mission needs, AMMOS developers created a set of applications that have operated dozens of deep-space robotic missions over the past 30 years. We seek to leverage advances in technology and practice of architecting and systems engineering, using model-based approaches to update the AMMOS. We therefore revisit fundamental aspects of the AMMOS, resulting in a major update to the Mission Operations System (MOS): MOS 2.0. This update will ensure that the MOS can support an increasing range of mission types, (such as orbiters, landers, rovers, penetrators and balloons), and that the operations systems for deep-space robotic missions can reap the benefits of an iterative multi-mission framework.12 This paper reports on the first phase of this major update. Here we describe the methods and formal semantics used to address MOS 2.0 architecture and some early results. Early benefits of this approach include improved stakeholder input and buy-in, the ability to articulate and focus effort on key, system-wide principles, and efficiency gains obtained by use of well-architected design patterns and the use of models to improve the quality of documentation and decrease the effort required to produce and maintain it. We find that such methods facilitate reasoning, simulation, analysis on the system design in terms of design impacts, generation of products (e.g., project-review and software-delivery products), and use of formal process descriptions to enable goal-based operations. This initial phase yields a forward-looking and principled MOS 2.0 architectural vision, which considers both the mission-specific context and long-term system sustainability.

ground support systems↗
NASA NTRS2018

UV Capabilities of the CETUS Multi-Object Spectrometer (MOS) and NUV/FUV Camera

The Cosmic Evolution Through UV Spectroscopy (CETUS) concept enables parallel observations by the UV multiobject spectrometer (MOS) and near-UV/far-UV camera which operate simultaneously but independently with their separate field of views. The near-UV MOS can target up to 100 objects at a time without confusion with nearby sources or background zodiacal light. This multiplexing will allow over 100,000 galaxies to be observed over a typical mission lifetime. The MOS includes a next-generation micro-shutter array (NGMSA), an efficient aspheric Offner-like spectrometer design with a convex grating, and nanotube light traps for suppressing unwanted wavelengths. The NUV/FUV Camera has the capability to image in a range of sub-bands from 115-400 nm at the same time the MOS is operating at 180-350 nm. The UV camera has a similar Offner-like relay, selectable filters, and two separate detectors to optimize observing in either the far-UV (115-175 nm) or the near-UV (180-400 nm) utilizing a CsI Micro-Channel Plate detector (MCP) and a CCD respectively.

The Cosmic Evolution Through UV Spectroscopy (CETU↗
NASA NTRS1983

Radiation effects on MOS devices - dosimetry, annealing, irradiation sequence, and sources

This paper reports on some investigations of dosimetry, annealing, irradiation sequences, and radioactive sources, involved in the determination of radiation effects on MOS devices. Results show that agreement in the experimental and theoretical surface to average doses support the use of thermo-luminescent dosimeters (manganese activated calcium fluoride) in specifying the surface dose delivered to thin gate insulators of MOS devices. Annealing measurements indicate the existence of at least two energy levels,,s or a activation energies, for recovery of soft oxide MOS devices after irradiation by electrons, protons, and gammas. Damage sensitivities of MOS devices were found to be independent of combinations and sequences of radiation type or energies. Comparison of various gamma sources indicated a small dependence of damage sensitivity on the Cobalt facility, but a more significant dependence in the case of the Cesium source. These results were attributed to differences in the spectral content of the several sources.

Stassinopoulos, E. G.↗
NASA NTRS1984

MOSFET and MOS capacitor responses to ionizing radiation

The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

Benedetto, J. M.↗
NASA NTRS1971

Radiation damage in MOS integrated circuits, Part 1

Complementary and p-channel MOS integrated circuits made by four commercial manufacturers were investigated for sensitivity to radiation environment. The circuits were irradiated with 1.5 MeV electrons. The results are given for electrons and for the Co-60 gamma radiation equivalent. The data are presented in terms of shifts in the threshold potentials and changes in transconductances and leakages. Gate biases of -10V, +10V and zero volts were applied to individual MOS units during irradiation. It was found that, in most of circuits of complementary MOS technologies, noticable changes due to radiation appear first as increased leakage in n-channel MOSFETs somewhat before a total integrated dose 10 to the 12th power electrons/sg cm is reached. The inability of p-channel MOSFETs to turn on sets in at about 10 to the 13th power electrons/sq cm. Of the circuits tested, an RCA A-series circuit was the most radiation resistant sample.

Danchenko, V.↗
NASA NTRS1974

Surface-state spectra from thick-oxide MOS tunnel junctions

The conductance and capacitance of thick-oxide MOS tunnel junctions (SiO2 thickness 40 to 65 A) have been measured from 35 Hz to 210 kHz. It is demonstrated that the use of a thick-oxide MOS tunnel junction makes it possible to obtain the surface-state data throughout the whole silicon band gap with better resolution and better sensitivity than the conventional MOS capacitance techniques. A slight departure from equilibrium may occur in the voltage range where large tunnel current flows. Corrections to the energy scale must be made in this voltage range. A method for the evaluation of the junction quality is discussed. The simplified equivalent circuits necessary for the calculation of surface-state data are constructed under various bias conditions by an approach different from that used in a previously published work. The present work supports the model that at least some of the observed surface states are a consequence of the diffusion of contact metals into the oxide.

Ma, T. P.↗
NASA NTRS1974

Study of the use of Metal-Oxide-Silicon (MOS) devices for particulate detection and monitoring in the earth's atmosphere

A metal-oxide-silicon (MOS) capacitor-type particulate sensor was evaluated for use in atmospheric measurements. An accelerator system was designed and tested for the purpose of providing the necessary energy to trigger the MOS-type sensor. The accelerator system and the MOS sensor were characterized as a function of particle size and velocity. Diamond particles were used as particulate sources in laboratory tests. Preliminary tests were performed in which the detector was mounted on an aircraft and flown in the vicinity of coal-fired electric generating plants.

Brooks, A. D.↗
NASA NTRS1976

Modeling of short channel MOS transistors

Higher frequency response in MOS technology can be obtained by shortening the channel length. One approach for doing this involves an employment of higher resolution lithography technology. A second approach makes use of a double-diffused MOS transistor (DMOS). It is pointed out that the ordinary method of modeling the transistors used in both approaches is not accurate. An investigation is conducted of the questions which have to be considered for DMOS modeling. The modeling of a short channel MOS transistor is discussed, taking into account the derivation of the threshold voltage equation. Excellent agreement between theoretical and experimental data shows the accuracy of the described modeling approach.

Lin, H. C.↗
NASA NTRS1979

Cosmic ray-induced soft errors in static MOS memory cells

Previous analytical models were extended to predict cosmic ray-induced soft error rates in static MOS memory devices. The effect is due to ionization and can be introduced by high energy, heavy ion components of the galactic environment. The results indicate that the sensitivity of memory cells is directly related to the density of the particular MOS technology which determines the node capacitance values. Hence, CMOS is less sensitive than e.g., PMOS. In addition, static MOS memory cells are less sensitive than dynamic ones due to differences in the mechanisms of storing bits. The flip-flop of a static cell is inherently stable against cosmic ray-induced bit flips. Predicted error rates on a CMOS RAM and a PMOS shift register are in general agreement with previous spacecraft flight data.

Sivo, L. L.↗
NASA NTRS1980

Frequency response of charge transfer in MOS inversion layers

The dynamics of charge transfer from a reservoir into an MOS inversion layer, which limits the frequency response of an MOS transistor or a charge-coupled device, is investigated. Using Berman and Kerr's model of space-charge capacitance in the semiconductor, a small-signal distributed model is developed for an MOS structure which transfers charge in an inversion channel due to a variation in the gate voltage. The dynamics of the charge transfer is characterized by a time constant which is determined by the length of the inversion channel and its mobility. Experimental data of gate capacitance vs frequency, taken from a test structure with a diffused source/drain well, are satisfactorily fitted by theoretical curves derived from the model. The channel mobility is precisely determined from the adjusted time constant. The influence of interface states on the capacitance-frequency relationship is also briefly discussed.

Lieneweg, U.↗
NASA NTRS1983

Studies in electron phenomena in MOS structures: The pulsed C-V method

The pulse hysteresis capacitance voltage (C-V) provides a straight forward technique for measuring the change of various charges in MOS structures and a tool for investigating the kinetics of various electron phenomena is developed and described. The method can be used for measuring the energy distribution and kinetics of surface states with the resolution of about 1/5 x 10 to the -9 power cm eV. Some transients in an MOS structure, particularly, the thermal generation of minority charge carriers via surface states and the relaxation of minority charge carriers supplied from the inversion layer outside the MOS structure are theoretically investigated. Analytical expressions which clearly present the physics of those electron phenomena are derived.

Kaplan, G.↗
NASA NTRS2003

Total Ionizing Dose Effects in MOS Oxides and Devices

The development of military and space electronics technology has traditionally been heavily influenced by the commercial semiconductor industry. The development of MOS technology, and particularly CMOS technology, as dominant commercial technologies has occurred entirely within the lifetime of the NSREC. For this reason, it is not surprising that the study of radiation interactions with MOS materials, devices and circuits has been a major theme of this conference for most of its history. The basic radiation problem in a MOS transistor is illustrated. The application of an appropriate gate voltage causes a conducting channel to form between the source and drain, so that current flows when the device is turned on. In Fig. lb, the effect of ionizing radiation is illustrated. Radiation-induced trapped charge has built up in the gate oxide, which causes a shift in the threshold voltage (that is, a change in the voltage which must be applied to turn the device on). If this shift is large enough, the device cannot be turned off, even at zero volts applied, and the device is said to have failed by going depletion mode.

Oldham, Timothy R.↗
NASA NTRS2013

Model-based Systems Engineering: Creation and Implementation of Model Validation Rules for MOS 2.0

Model-based Systems Engineering (MBSE) is an emerging modeling application that is used to enhance the system development process. MBSE allows for the centralization of project and system information that would otherwise be stored in extraneous locations, yielding better communication, expedited document generation and increased knowledge capture. Based on MBSE concepts and the employment of the Systems Modeling Language (SysML), extremely large and complex systems can be modeled from conceptual design through all system lifecycles. The Operations Revitalization Initiative (OpsRev) seeks to leverage MBSE to modernize the aging Advanced Multi-Mission Operations Systems (AMMOS) into the Mission Operations System 2.0 (MOS 2.0). The MOS 2.0 will be delivered in a series of conceptual and design models and documents built using the modeling tool MagicDraw. To ensure model completeness and cohesiveness, it is imperative that the MOS 2.0 models adhere to the specifications, patterns and profiles of the Mission Service Architecture Framework, thus leading to the use of validation rules. This paper outlines the process by which validation rules are identified, designed, implemented and tested. Ultimately, these rules provide the ability to maintain model correctness and synchronization in a simple, quick and effective manner, thus allowing the continuation of project and system progress.

Model-based Systems Engineering (MBSE)↗
NASA NTRS2012

Principles to Products: Toward Realizing MOS 2.0

This is a report on the Operations Revitalization Initiative, part of the ongoing NASA-funded Advanced Multi-Mission Operations Systems (AMMOS) program. We are implementing products that significantly improve efficiency and effectiveness of Mission Operations Systems (MOS) for deep-space missions. We take a multi-mission approach, in keeping with our organization's charter to "provide multi-mission tools and services that enable mission customers to operate at a lower total cost to NASA." Focusing first on architectural fundamentals of the MOS, we review the effort's progress. In particular, we note the use of stakeholder interactions and consideration of past lessons learned to motivate a set of Principles that guide the evolution of the AMMOS. Thus guided, we have created essential patterns and connections (detailed in companion papers) that are explicitly modeled and support elaboration at multiple levels of detail (system, sub-system, element...) throughout a MOS. This architecture is realized in design and implementation products that provide lifecycle support to a Mission at the system and subsystem level. The products include adaptable multi-mission engineering documentation that describes essentials such as operational concepts and scenarios, requirements, interfaces and agreements, information models, and mission operations processes. Because we have adopted a model-based system engineering method, these documents and their contents are meaningfully related to one another and to the system model. This means they are both more rigorous and reusable (from mission to mission) than standard system engineering products. The use of models also enables detailed, early (e.g., formulation phase) insight into the impact of changes (e.g., to interfaces or to software) that is rigorous and complete, allowing better decisions on cost or technical trades. Finally, our work provides clear and rigorous specification of operations needs to software developers, further enabling significant gains in productivity.

AMMOS↗
NASA NTRS1972

Irradiation of MOS-FET devices to provide desired logic functions

Gamma, X-ray, electron, or other radiation is used to shift threshold potentials of MOS devices on logic circuits. Before irradiation MOS gates to be shifted are biased positive and other gates are grounded to substrate. Threshold lasts 10 years. Thermal annealing brings circuit back to original configuration.

Danchenko, V.↗