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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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Anti- reflective device having an anti-reflection surface formed of silicon spikes with nano-tips

Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

Bae, Youngsman↗

Anti-reflective device having an anti-reflective surface formed of silicon spikes with nano-tips

Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

Bae, Youngsam↗

Silicon Nanotips Antireflection Surface for Micro Sun Sensor

We have developed a new technique to fabricate antireflection surface using silicon nano-tips for use on a micro sun sensor for Mars rovers. We have achieved randomly distributed nano-tips of radius spanning from 20 nm to 100 nm and aspect ratio of ~200 using a two-step dry etching process. The 30(deg) specular reflectance at the target wavelength of 1 (mu)m is only about 0.09 %, nearly three orders of magnitude lower than that of bare silicon, and the hemispherical reflectance is ~ 8%. By changing the density and aspect ratio of these nanotips, the change in reflectance is demonstrated. Using surfaces covered with these nano-tips, the critical problem of ghost images that are caused by multiple internal reflections in a micro sun sensor was solved.

antireflection↗

A Diamond Electron Tunneling Micro-Electromechanical Sensor

A new pressure sensing device using field emission from diamond coated silicon tips has been developed. A high electric field applied between a nano-tip array and a diaphragm configured as electrodes produces electron emission governed by the Fowler Nordheim equation. The electron emission is very sensitive to the separation between the diaphragm and the tips, which is fixed at an initial spacing and bonded such that a cavity is created between them. Pressure applied to the diaphragm decreases the spacing between the electrodes, thereby increasing the number of electrons emitted. Silicon has been used as a substrate on which arrays of diamond coated sharp tips have been fabricated for electron emission. Also, a diaphragm has been made using wet orientation dependent etching. These two structures were bonded together using epoxy and tested. Current - voltage measurements were made at varying pressures for 1-5 V biasing conditions. The sensitivity was found to be 2.13 mV/V/psi for a 20 x 20 array, which is comparable to that of silicon piezoresistive transducers. Thinner diaphragms as well as alternative methods of bonding are expected to improve the electrical characteristics of the device. This transducer will find applications in many engineering fields for pressure measurement.

Albin, Sacharia↗