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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

3D nanolithography with metalens arrays and spatially adaptive illumination

The growing demand for advanced materials, miniaturized devices and integrated microsystems calls for the reliable fabrication of complex, multiscale, three-dimensional (3D) architectures, a need increasingly addressed through light-based and laser-based processes. However, owing to the field-of-view (FOV) limitations of conventional imaging optics, existing 3D laser nanofabrication techniques face fundamental challenges in throughput, proximity error and stitching defects on the path to scaling. Here, in this study, we present a scalable 3D nanofabrication platform that uses a metalens-generated focal spot array to parallelize two-photon lithography (TPL) beyond centimetre-scale write field areas. Metalenses are ideally suited for producing submicron-scale focal spots for high-throughput nanolithography, as they uniquely feature large numerical apertures (NAs), immersion media compatibility and large-scale manufacturability. We experimentally demonstrate a printing system that uses a 12-cm 2 metalens array to produce more than 120,000 cooperative focal spots, corresponding to a throughput exceeding 10 8 voxels s −1 . By programmatically patterning the focal spot array using a spatial light modulator (SLM), an adaptive parallel printing strategy is developed for precise greyscale linewidth modulation and choreographed printing of semiperiodic and fully aperiodic 3D geometries. We demonstrate parallel printing of replicated microstructures (>50 M microparticles per day), centimetre-scale 3D architectures with feature sizes down to 113 nm, and photonic and mechanical metamaterials. This work demonstrates the potential of 3D nanolithography towards wafer-scale production, showing how TPL could be used at scale for applications in microelectronics, biomedicine, quantum technology and high-energy laser targets.

Materials science↗
DOE OSTI2014

Telescopic nanotube device for hot nanolithography

A device for maintaining a constant tip-surface distance for producing nanolithography patterns on a surface using a telescopic nanotube for hot nanolithography. An outer nanotube is attached to an AFM cantilever opposite a support end. An inner nanotube is telescopically disposed within the outer nanotube. The tip of the inner nanotube is heated to a sufficiently high temperature and brought in the vicinity of the surface. Heat is transmitted to the surface for thermal imprinting. Because the inner tube moves telescopically along the outer nanotube axis, a tip-surface distance is maintained constant due to the vdW force interaction, which in turn eliminates the need of an active feedback loop.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

The Role of Liquid Ink Transport in the Direct Placement of Quantum Dot Emitters onto Sub-Micrometer Antennas by Dip-Pen Nanolithography

Here, dip-pen nanolithography (DPN) is used to precisely position core/thick-shell (“giant”) quantum dots (gQDs; ≥10 nm in diameter) exclusively on top of silicon nanodisk antennas (≈500 nm diameter pillars with a height of ≈200 nm), resulting in periodic arrays of hybrid nanostructures and demonstrating a facile integration strategy toward next-generation quantum light sources. A three-step reading-inking-writing approach is employed, where atomic force microscopy (AFM) images of the pre-patterned substrate topography are used as maps to direct accurate placement of nanocrystals. The DPN “ink” comprises gQDs suspended in a non-aqueous carrier solvent, o-dichlorobenzene. Systematic analyses of factors influencing deposition rate for this non-conventional DPN ink are described for flat substrates and used to establish the conditions required to achieve small (sub-500 nm) feature sizes, namely: dwell time, ink-substrate contact angle and ink volume. Finally, it is shown that the rate of solvent transport controls the feature size in which gQDs are found on the substrate, but also that the number and consistency of nanocrystals deposited depends on the stability of the gQD suspension. In conclusion, the results lay the groundwork for expanded use of nanocrystal liquid inks and DPN for fabrication of multi-component nanostructures that are challenging to create using traditional lithographic techniques.

36 MATERIALS SCIENCE↗
DOE OSTI2020

FEBIP for functional nanolithography of 2D nanomaterials

Lithographic patterning on emerging nanomaterials is one of essential ingredients for the development of new functional nanomaterial and device systems. Focused electron beam induced processing (FEBIP) in combination with an on-demand reconfigurable precursor injection system enables the highest resolution and controllability of nanolithography on two-dimensional (2D) nanomaterials. FEBIP allows for localized atomic-to-nanoscale engineering of nanomaterials and devices in a multi-mode format including geometrical patterning, functionalization/defect formation/doping, metal/metal oxide deposition, interface fusion and activation, active channel cleaning. This chapter discusses the scientific bases and showcases the state-of-the-art FEBIP technologies with a specific focus on functional lithography of 2D nanomaterials and provides future prospects of FEBIP technologies to address real industrial needs for the development of high-performance, next-generation functional devices.

2D materials, nanolithography, focused electron be↗
DOE OSTI2025

Molecular Layer Deposited Aluminum‐Based Hybrid Resist for High‐Resolution Nanolithography and Direct Ultra‐High Aspect Ratio Pattern Transfer

Inorganic-containing hybrid photoresists are critical for next-generation extreme ultraviolet (EUV) lithography and angstrom-era semiconductor miniaturization. However, associated conventional solution processing struggles to achieve ultrathin, uniform films with high conformality and compositional control, limiting overall patterning performance. Here, this study reports the systematic lithographic patterning characterization of an Al-based hybrid resist synthesized via vapor-phase molecular layer deposition (MLD), using the trimethylaluminum (TMA) metal precursor and the hydroquinone (HQ) aromatic organic linker. The resist supports both sub-20 nm high-resolution nanolithography and virtually infinite silicon plasma etch selectivity. Lithographic performance studied using electron beam lithography (EBL) as a proxy for EUV shows that, under an optimized process adopting post-exposure bake, the resist achieves the best resolution of 15.4 nm linewidth under stringent 1:1 line-space high-density patterning—limited only by the minimum beam size of the EBL system. The resist also shows wide dose latitude and balanced performance in resolution, roughness, and sensitivity. The infinite silicon etch selectivity, stemming from spontaneous aluminum oxyfluoride passivation layer formation, enables fabrication of micrometer-tall, 40 nm-wide silicon nanofin structures using only a ≈30 nm-thick resist layer, without no hard mask. These results highlight the potential of MLD-based hybrid resists for developing next-generation resist materials for micro/nanoelectronics manufacturing.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Synthesis and Characterization of Methacrylamide-Based Block Random Copolymers via Amine Functionalization of Polystyrene- Block -Poly(Pentafluorophenyl Methacrylate) Toward Enhanced Amenability to Manufacturing Criteria in Nanolithography

Recent interest in manipulating the chemistry of block copolymers (BCPs) to manage the covarying properties necessary to meet manufacturing criteria in nanolithography has resulted in the development and expansion of the A-block-(B-random-C) BCP architecture, where the random block allows for the decoupling of thermodynamic and wetting properties. Previous reports of such BCPs have used click chemistry to create the desired random block, but all such instances possess additional functional groups that are susceptible to undesirable side reactions upon annealing, such as cross-linking and surface grafting. This study reports the substitution reaction of polystyrene-block-poly(pentafluorophenyl methacrylate) (PS-b-PPFMA) with primary amines. The resulting methacrylamide structure of the functionalized random block has only an amide linkage between the attached functional group and the polymer backbone, thereby omitting any sources of side reactions within the BCP. The outcomes of this report also demonstrate the enhanced thermal stability of these materials by virtue of their stable amide bonds. A range of random copolymer compositions is assessed to develop BCPs in which the random block has approximately the same surface energy as the PS block. These BCPs can self-assemble into perpendicular lamellae and are therefore promising candidates for directed self-assembly.

block copolymers↗
DOE OSTI2019

Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists

Organic–inorganic hybrid resists are emerging as an effective way of addressing stringent process requirements for aggressive down-scaling of semiconducting devices. Yet, hybrid resists generally require complex chemical synthesis while being predominantly negative-tone with high dose requirements. For positive-tone processes and high-aspect-ratio pattern transfers, resist choices are limited to costly, non-hybrid alternatives, whose etch resistance is still inferior compared with hybrid resists. In this work, we demonstrate a novel hybrid positive-tone resist platform utilizing simple ex situ vapor-phase inorganic infiltration into standard resist materials. A model system based on poly(methyl methacrylate) (PMMA) thin film hybridized with aluminum oxide has been demonstrated for electron-beam lithography patterning, featuring a fully controllable critical exposure dose, contrast, and etch resistance. The hybrid resist not only achieves contrast as high as ~30, six-fold enhancement over standard PMMA, but also enables Si nanostructures with resolution down to ~30 nm and an aspect ratio as high as ~17, owing to enhancement of the Si etch selectivity to ~70, with an estimated achievable maximum of ~300, far exceeding known commercial positive-tone resist systems. The easy implementabilility, combined with versatile ex situ control of resist characteristics, makes this hybrid resist synthesis method uniquely suited for addressing the resist performance and high throughput required for advanced nanolithography techniques, such as extreme ultraviolet lithography, possibly.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2014

Mechanism of force mode dip-pen nanolithography

In this work, the underlying mechanism of the force mode dip-pen nanolithography (FMDPN) is investigated in depth by analyzing force curves, tapping mode deflection signals, and “Z-scan” voltage variations during the FMDPN. The operation parameters including the relative “trigger threshold” and “surface delay” parameters are vital to control the loading force and dwell time for ink deposition during FMDPN. A model is also developed to simulate the interactions between the atomic force microscope tip and soft substrate during FMDPN, and verified by its good performance in fitting our experimental data.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Highly conductive indium nanowires deposited on silicon by dip-pen nanolithography

In this paper, we developed a new dip-pen nanolithography (DPN) method. Using this method, we fabricated conductive nanowires with diameters of 30–50 nm on silicon substrates. To accomplish this, indium was transferred from an atomic force microscopy tip to the surface by applying a potential difference between the tip and substrate. The fabricated indium nanowires were several micrometers in length. Unlike thermal DPN, our DPN method hardly oxidized the indium, producing nanowires with conductivities from 5.7 × 10{sup −3} to 4 × 10{sup −2} Ω cm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Note: Experimental observation of nano-channel pattern in light sheet laser interference nanolithography system

We experimentally observed nano-channel-like pattern in a light-sheet based interference nanolithography system. The optical system created nano-channel-like patterned illumination. Coherent counter-propagating light sheets are made to interfere at and near geometrical focus along the propagation z-axis. This results in the formation of nano-channel-like pattern (of size ≈ 300 nm and inter-channel periodicity of ≈337.5 nm) inside the sample due to constructive and destructive interference. In addition, the technique has the ability to generate large area patterning using larger light-sheets. Exciting applications are in the broad field of nanotechnology (nano-electronics and nano-fluidics).

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2017

Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography

Quasi-one-dimensional semiconductor structures with a variable longitudinal potential profile are fabricated by pulse power nanolithography, which is carried out using an atomic force microscope. Structures are fabricated on the basis of AlGaAs/GaAs heterostructures with a deep (130 nm from the surface) twodimensional electron gas. The channel potential profile is formed with the help of sectioned in-plane gates formed on both channel sides. The electrical parameters of the structures measured at temperatures down to 1.5 K confirmed the efficiency of the applied method to fabricate insulating regions with lateral sizes of ~10 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Alternative Technology for Creating Nanostructures Using Dip Pen Nanolithography

For modern microelectronics, at the present time, the technologies of consciousness smart structures play an important role, which can provide accuracy, stability and high quality of the structures. Submicron lithography methods are quite expensive and have natural size limitations, not allowing the production of structures with an extremely small lateral limitation. Therefore, an intensive search was conducted for alternative methods for creating submicron resolution structures. Especially attractive one is the possibility of self-organization effects utilization, where the nanostructure of a certain size is formed under the influence of internal forces. The dip pen nanolithography method based on a scanning probe microscope uses a directwrite technology and allows one to carry out a playback of small size structures with high accuracy. In the experiment, a substrate coated with Au (15 nm) using a DPN technique is applied to the polymer to form a desired pattern nano-sized channel. The experiment was conducted using a pointed probe SiN, coated MHA-Acetonitrile, on the Si(111)/Fe{sub 3}Si/Au structure.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Dip-Pen Nanolithography Method for Fabrication of Biofunctionalized Magnetic Nanodiscs Applied in Medicine

The magnetic properties of ferromagnetic nanodiscs coated with gold, manufactured using the Dip-Pen Nanolithography method, and were studied by atomic-force and magnetic force microscopy methods. The magnetic discs (dots) are represented as nanoagents (nanorobots) applied in medicine for the cancer cell destruction. The motivation of this work stem from the necessity of the understanding of the magnetization distribution in ferromagnetic discs that is crucial for their application in biomedicine. We have performed the theoretical calculations in order to compare the theoretical image contrast to experimental results. Herein, we report about the fabrication and analysis of biocompatible ferromagnetic nanodiscs with the homogenous magnetized state.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Thermochemical nanolithography components, systems, and methods

Improved nanolithography components, systems, and methods are described herein. The systems and methods generally employ a resistively heated atomic force microscope tip to thermally induce a chemical change in a surface. In addition, certain polymeric compositions are also disclosed.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Using block-copolymer nanolithography as a tool to sensitively evaluate variation in chemical dry etching rates of semiconductor materials with sub-5 nm resolution

Ion implantation is a robust and established method to customize the electronic properties of Si. However, fabricating doped, ultrafine semiconductor nanostructures can be challenging. Ion implantation has well-established effects on the dry etch rates of Si, which becomes increasingly consequential as the target dimension shrinks below a few tens of nanometers. While dry etching arrays of block copolymer-templated nanoscale holes (pitch = 37.5 nm, diameter ~25 nm) into p-type, n-type, and undoped Si, we observed that the lateral etch rate was notably larger for the n-type regions than p-type or undoped regions. By doing image analyses on high resolution electron micrographs of the nanostructured hole arrays, we were able to extract the porosity and average radii of the holes with subnanometer sensitivity and compare the relative etch rates between different doping conditions. We found that degenerately doped n-type silicon consistently etches between approximately 17% and 27% faster in the lateral direction than p-type Si, resulting in significantly larger porosity and, consequently, less mechanical stability. Here, we demonstrate that top-down dimensional analysis of a densely packed porous nanostructure is a robust method for assessing extremely small differences in the lateral, chemical etch rate of doped Si to a degree of sensitivity that was previously unachievable. The minute, dense-packed nature of block copolymer self-assembled nanostructures is shown to be ideal for this application. This proposed method could be useful for designing fabrication processes for heterogeneous nanostructures, as slight dry etch rate variations that may be within process tolerance at the micrometer-scale appear to have nontrivial consequences at the nanometer scale.

42 ENGINEERING↗
DOE OSTI2018

Replica molding-based nanopatterning of tribocharge on elastomer with application to electrohydrodynamic nanolithography

Replica molding often induces tribocharge on elastomers. To date, this phenomenon has been studied only on untextured elastomer surfaces even though replica molding is an effective method for their nanotexturing. Here we show that on elastomer surfaces nanotextured through replica molding the induced tribocharge also becomes patterned at nanoscale in close correlation with the nanotexture. Here, by applying Kelvin probe microscopy, electrohydrodynamic lithography, and electrostatic analysis to our model nanostructure, poly(dimethylsiloxane) nanocup arrays replicated from a polycarbonate nanocone array, we reveal that the induced tribocharge is highly localized within the nanocup, especially around its rim. Through finite element analysis, we also find that the rim sustains the strongest friction during the demolding process. From these findings, we identify the demolding-induced friction as the main factor governing the tribocharge’s nanoscale distribution pattern. Finally, by incorporating the resulting annular tribocharge into electrohydrodynamic lithography, we also accomplish facile realization of nanovolcanos with 10 nm-scale craters.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Prominent radiative contributions from multiply-excited states in laser-produced tin plasma for nanolithography

Extreme ultraviolet (EUV) lithography is currently entering high-volume manufacturing to enable the continued miniaturization of semiconductor devices. The required EUV light, at 13.5 nm wavelength, is produced in a hot and dense laser-driven tin plasma. The atomic origins of this light are demonstrably poorly understood. Here we calculate detailed tin opacity spectra using the Los Alamos atomic physics suite ATOMIC and validate these calculations with experimental comparisons. Our key finding is that EUV light largely originates from transitions between multiply-excited states, and not from the singly-excited states decaying to the ground state as is the current paradigm. Moreover, we find that transitions between these multiply-excited states also contribute in the same narrow window around 13.5 nm as those originating from singly-excited states, and this striking property holds over a wide range of charge states. We thus reveal the doubly magic behavior of tin and the origins of the EUV light.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗