SEARCH · Search NASA
Results for “nanopatterned”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Method of making nanopatterns and nanostructures and nanopatterned functional oxide materials
Method for nanopatterning of inorganic materials, such as ceramic (e.g. metal oxide) materials, and organic materials, such as polymer materials, on a variety of substrates to form nanopatterns and/or nanostructures with control of dimensions and location, all without the need for etching the materials and without the need for re-alignment between multiple patterning steps in forming nanostructures, such as heterostructures comprising multiple materials. The method involves patterning a resist-coated substrate using electron beam lithography, removing a portion of the resist to provide a patterned resist-coated substrate, and spin coating the patterned resist-coated substrate with a liquid precursor, such as a sol precursor, of the inorganic or organic material. The remaining resist is removed and the spin coated substrate is heated at an elevated temperature to crystallize the deposited precursor material.
Nanopatterned bulk metallic glass-based biomaterials modulate macrophage polarization
Not Available
Supramolecular Assemblies on Surfaces: Nanopatterning, Functionality, and Reactivity
Understanding how molecules interact to form large-scale hierarchical structures on surfaces holds promise for building designer nanoscale constructs with defined chemical and physical properties. Here, we describe early advances in this field and highlight upcoming opportunities and challenges. Both direct intermolecular interactions and those that are mediated by coordinated metal centers or substrates are discussed. These interactions can be additive, but they can also interfere with each other, leading to new assemblies in which electrical potentials vary at distances much larger than those of typical chemical interactions. Earlier spectroscopic and surface measurements have provided partial information on such interfacial effects. In the interim, scanning probe microscopies have assumed defining roles in the field of molecular organization on surfaces, delivering deeper understanding of interactions, structures, and local potentials. Furthermore, self-assembly is a key strategy to form extended structures on surfaces, advancing nanolithography into the chemical dimension and providing simultaneous control at multiple scales. In parallel, the emergence of graphene and the resulting impetus to explore 2D materials have broadened the field, as surface-confined reactions of molecular building blocks provide access to such materials as 2D polymers and graphene nanoribbons. In this Review, we describe recent advances and point out promising directions that will lead to even greater and more robust capabilities to exploit designer surfaces.
Conductive scanning probe characterization and nanopatterning of electronic and energy materials
Explore the source record for details and available documents.
Suppression of external quantum efficiency roll-off of nanopatterned organic-light emitting diodes at high current densities
We developed organic light-emitting diodes (OLEDs) with nanopatterned current flow regions using electron-beam lithography with the aim of suppressing singlet–polaron annihilation (SPA). Nanopatterns composed of lines and circles were used in the current flow regions of nano-line and nano-dot OLEDs, respectively. Excitons partially escape from the current flow regions where SPA takes place. As such, current densities where external quantum efficiencies were half of their initial values (J{sub 0}) increased as line width and circle diameter were decreased to close to the exciton diffusion length. Circles were more efficient at enhancing exciton escape and increasing J{sub 0} than lines. The J{sub 0} increase in the nano-dot OLEDs containing nanopatterned circles with a diameter of 50 nm was approximately 41-fold that of a conventional OLED with a current flow region of 4 mm{sup 2}. The dependence of J{sub 0} on the size and shape of the nanopatterns was well explained by an SPA model that considered exciton diffusion. Nanopatterning of OLEDs is a feasible method of obtaining large J{sub 0}.
Amorphous 2D Materials – A Novel Platform for Remote Epitaxy and Nanopatterned Epitaxy of III-V Semiconductors with Low Decomposition Temperatures
III-V semiconductor materials such as indium phosphide (InP) offer outstanding photonic properties that outperforms silicon, but the cost of these wafers is extremely expensive. Although reusing original wafers can effectively minimize the cost, current techniques for wafer recycling of these substrates add significant costs in fabrication, nullifying the cost savings by reusing the wafers. Besides, unlike other III-V materials such as gallium arsenide (GaAs), commonly used epitaxial lift-off method for wafer recycling is not well studied for materials like InP due to lack of lattice-matched sacrificial layers, which makes reusing these wafers more difficult. Remote epitaxy and nanopatterned epitaxy are newly discovered methods that enable single-crystal growth of III-V semiconductor thin films and easy exfoliation of these grown films, thus promising for a new cost-effective pathway of reusing wafers. However, previous methods of transferring two-dimensional (2D) materials, which use polymethyl methacrylate (PMMA) or metal stressor layers to transfer 2D materials grown on foreign substrates like copper (Cu) or silicon carbide (SiC), introduce defects and damages on the 2D layer and/or substrates during the transfer process. Remote epitaxial and nanopatterned epitaxial films grown on the damaged 2D layer/substrate suffer from lower crystal quality and imperfect exfoliation, which undermines wafer reusability and device performance. Here we report the MBE growth of amorphous boron nitride (a-BN) on InP wafers at low temperature that enabled improved quality of remote epitaxial and nanopatterned epitaxial films and their perfect exfoliation. We show fully covered a-BN on InP substrates despite their low decomposition temperatures. The surface of a-BN coated InP substrate remains smooth with a RMS roughness of around 3Â. We also demonstrate 100% coverage of single-crystal InP thin films grown on a-BN, with the film's quality significantly improved compared to the case of transferred 2D materials. In addition, the growth and exfoliation were successfully repeated multiple times, proving the feasibility for InP wafer recycling. Through this low temperature MBE growth approach with remote epitaxy and nanopatterned epitaxy, we successfully demonstrate large-scale flexible thin film exfoliation and recycling of InP substrates, which will lead to new opportunities in InP thin film-based photonics and novel heterostructures with significantly reduced cost.
Amorphous 2D Materials – A Novel Platform for Remote Epitaxy and Nanopatterned Epitaxy of III-V Semiconductors with Low Decomposition Temperatures
III-V semiconductor materials such as indium phosphide (InP) offer outstanding photonic properties that outperforms silicon, but the cost of these wafers is extremely expensive. Although reusing original wafers can effectively minimize the cost, current techniques for wafer recycling of these substrates add significant costs in fabrication, nullifying the cost savings by reusing the wafers. Besides, unlike other III-V materials such as gallium arsenide (GaAs), commonly used epitaxial lift-off method for wafer recycling is not well studied for materials like InP due to lack of lattice-matched sacrificial layers, which makes reusing these wafers more difficult. Remote epitaxy and nanopatterned epitaxy are newly discovered methods that enable single-crystal growth of III-V semiconductor thin films and easy exfoliation of these grown films, thus promising for a new cost-effective pathway of reusing wafers. However, previous methods of transferring two-dimensional (2D) materials, which use polymethyl methacrylate (PMMA) or metal stressor layers to transfer 2D materials grown on foreign substrates like copper (Cu) or silicon carbide (SiC), introduce defects and damages on the 2D layer and/or substrates during the transfer process. Remote epitaxial and nanopatterned epitaxial films grown on the damaged 2D layer/substrate suffer from lower crystal quality and imperfect exfoliation, which undermines wafer reusability and device performance. Here we report the MBE growth of amorphous boron nitride (a-BN) on InP wafers at low temperature that enabled improved quality of remote epitaxial and nanopatterned epitaxial films and their perfect exfoliation. We show fully covered a-BN on InP substrates despite their low decomposition temperatures. The surface of a-BN coated InP substrate remains smooth with a RMS roughness of around 3Å. We also demonstrate 100% coverage of single-crystal InP thin films grown on a-BN, with the film's quality significantly improved compared to the case of transferred 2D materials. In addition, the growth and exfoliation were successfully repeated multiple times, proving the feasibility for InP wafer recycling. Through this low temperature MBE growth approach with remote epitaxy and nanopatterned epitaxy, we successfully demonstrate large-scale flexible thin film exfoliation and recycling of InP substrates, which will lead to new opportunities in InP thin film-based photonics and novel heterostructures with significantly reduced cost.
Unveiling the interaction of nanopatterned void superlattices with irradiation cascades
Nanopatterned microstructures in materials can have a profound impact on materials’ physical and chemical properties. While voids are typically considered as detrimental defects in irradiated materials, the patterning of nanoscale voids causes the formation of void superlattices and provides a highly efficient mechanism for gas storage. Despite the important applications of nanopatterned defect superlattices, how they degrade under irradiation remains unclear. Here we provide direct observation of the evolution of void superlattices under irradiation and elucidate the interaction of void superlattices with irradiation cascades. We reveal that the instability of void superlattices under irradiation is caused by heterogenous void shrinkage and demonstrate the imperative role of mixed 1D/3D diffusion of self-interstitial atoms and injected inert gas atoms on void shrinkage and void superlattice instability. Understanding the degradation mechanisms of nanopatterned microstructures is essential to designing damage-tolerant materials and broadening their applications in extreme environments.
Effect of nanopatterning on mechanical properties of Lithium anode
One of the challenges in developing Lithium anodes for Lithium ion batteries (LIB) is controlling the formation of Li dendrites during cycling of the battery. Nanostructuring and nanopatterning of electrodes shows a promising way to suppress the growth of Li dendrites. However, in order to control this behavior, a fundamental understanding of the effect of nanopatterning on the electromechanical properties of Li metal is necessary. In this paper, we have investigated the mechanical and wear properties of Li metal using Atomic Force Microscopy (AFM) in an airtight cell. By using different load regimes, we determined the mechanical properties of Li metal. Here, we show that as a result of nanopatterning, Li metal surface underwent work hardening due to residual compressive stress. The presence of such stresses can help to improve cycle lifetime of LIBs with Li anodes and obtain very high energy densities.
Understanding Improvements in Coalesced Epilayers Grown over Nanopatterned Substrates
Nanopatterned substrates provide opportunities for reducing costs of high-efficiency III-V devices through methods such as substrate reuse and growth on cheaper substrates. In this work, we aim to better understand some of the fundamental challenges of growing high quality III-V material on nanopatterned substrates. Through specific pattern orientations and control of overgrowth morphology, we report that smooth and defect-free coalesced III-V epilayers are attainable over nanopatterned GaAs substrates.
Dilute Regeneration-Driven Membrane Capacitive Deionization of Synthetic Seawater Using Nanopatterned Membranes and Prussian Blue Analog Electrodes
Membrane capacitive deionization (MCDI) offers energy-efficient seawater desalination but is limited at high salinity by membrane resistance and incomplete electrode regeneration. Nanopatterned ion-exchange membranes, dilute regeneration protocols, and Prussian blue analog (PBA)-functionalized electrodes are combined in a flow-by-MCDI cell. Nanopatterned ion-exchange membranes (hexagonal, octagonal, double-ring, rectangular) enhance interfacial ion transport, with hexagonal geometry delivering ≈12.5% greater surface area and the best performance. PBA-functionalized electrodes increase salt adsorption and charge-transfer kinetic rates. The integrated system lowers the area-specific resistance by 45 Ω cm2, resulting in a 500 mV reduction in the cell voltage for a current density of 2 mA cm−2 for a 35 000 ppm NaCl feed. This improves the energy-normalized salt adsorption six fold (64–382 mmol J−1). Low salinity (2000 ppm) and mixed-salt regeneration sustains a ≈39% water recovery and stable performance for at least seven cycles. Overall, combining nanopatterned membranes, which promote confinement-enhanced ion mobility, and PBA electrodes, which enhance salt adsorption, improved the energy efficiency of MCDI.
Hierarchical, Self-Assembled Metasurfaces via Exposure-Controlled Reflow of Block Copolymer-Derived Nanopatterns
Here, nanopatterning for the fabrication of optical metasurfaces entails a need for high-resolution approaches like electron beam lithography that cannot be readily scaled beyond prototyping demonstrations. Block copolymer thin film self-assembly offers an attractive alternative for producing periodic nanopatterns across large areas, yet the pattern feature sizes are fixed by the polymer molecular weight and composition. Here, a general strategy is reported that overcomes the limitation of fixed feature size by treating the copolymer thin film as a hierarchical resist, in which the nanoscale pattern motif is defined by self-assembly. Feature sizes can then be tuned by thermal reflow controlled locally by irradiative crosslinking or chemical alteration using lithographic ultraviolet light or electron beam exposure. Using blends of polystyrene-block-poly(methylmethacrylate) (PS-b-PMMA) with PS and PMMA homopolymer, we demonstrate both self-assembled PS grating and hexagonal hole patterns; exposure-controlled reflow is then used to reduce hole diameter by as much as 50% or increase PS grating linewidth by more than 180%. Transferring these nanopatterns, or their inverse obtained by a lift-off approach, into silicon yields structural colors that may be prescriptively controlled based on nanoscale feature size. Furthermore, patterned exposure enables area-selective feature size control, yielding uniform structural color patterns across centimeter square areas. Electron beam lithography is also used to show that the lithographic resolution of this selective-area control can be extended to the nanoscale dimensions of the self-assembled features. The exposure-controlled reflow approach demonstrated here takes a pivotal step towards fabricating complex, hierarchical optical metasurfaces using scalable self-assembly methods.
Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction
Heterogeneous integration of single-crystal materials offers great opportunities for advanced device platforms and functional systems. Although substantial efforts have been made to co-integrate active device layers by heteroepitaxy, the mismatch in lattice polarity and lattice constants has been limiting the quality of the grown materials. Layer transfer methods as an alternative approach, on the other hand, suffer from the limited availability of transferrable materials and transfer-process-related obstacles. Here, we introduce graphene nanopatterns as an advanced heterointegration platform that allows the creation of a broad spectrum of freestanding single-crystalline membranes with substantially reduced defects, ranging from non-polar materials to polar materials and from low-bandgap to high-bandgap semiconductors. Additionally, we unveil unique mechanisms to substantially reduce crystallographic defects such as misfit dislocations, threading dislocations and antiphase boundaries in lattice- and polarity-mismatched heteroepitaxial systems, owing to the flexibility and chemical inertness of graphene nanopatterns. More importantly, we develop a comprehensive mechanics theory to precisely guide cracks through the graphene layer, and demonstrate the successful exfoliation of any epitaxial overlayers grown on the graphene nanopatterns. Furthermore, this approach has the potential to revolutionize the heterogeneous integration of dissimilar materials by widening the choice of materials and offering flexibility in designing heterointegrated systems.
Surface nanopattern formation due to current-induced homoepitaxial nanowire edge instability
Physical nanopatterning based on a precise control of macroscopic forcing is an essential tool of nanoscale science and technology. Using an externally applied electric field as the macroscopic force, we report here a computational study on the formation of surface nanopatterns consisting of single-layer homoepitaxial islands as a result of a morphological instability that can occur under edge electromigration conditions on the straight edge of a single-layer nanowire grown epitaxially on a crystalline substrate. Direct dynamical simulations based on a model that has been validated experimentally for the Ag/Ag system show that the current-induced nanowire edge instability causes the breakup of the nanowire and leads to the formation of uniformly distributed islands, arranged in linear or V-shaped arrays, which are uniformly sized with nanoscale dimensions. The simulation results are supported by linear stability theory and demonstrate that the geometrical features of the island patterns and the island sizes can be controlled precisely by controlling the electric field direction with respect to the nanowire axis and the electric field strength. Our findings have important implications for developing physical nanopatterning approaches toward enabling future nanofabrication technologies.
Direct fabrication of high aspect-ratio metal oxide nanopatterns via sequential infiltration synthesis in lithographically defined SU-8 templates
Nanopatterning high aspect-ratio metal oxide structures remains challenging for conventional nanofabrication methods based on reactive ion etching due to marginal etch selectivity between target oxides and typical mask materials. Here, the authors report the application of sequential infiltration synthesis (SIS) on lithographically defined SU-8 polymer templates for patterning arbitrarily designed, high aspect-ratio metal oxide nanostructures with sub-50 nm linewidths, smooth vertical profiles, and three-dimensional (3D) morphologies difficult to achieve by the conventional fabrication methods. As examples, various AlOx nanostructures with ∼40 nm linewidths and up to 16 aspect ratios were demonstrated, along with TiOx in-plane nanowire arrays of controlled positional registrations. Detailed scanning and transmission electron microscopy studies revealed nanocrystalline and amorphous internal structures of respective AlOx and TiOx, as well as the swelling and contraction behaviors of polymer templates during the SIS process, which allowed the facile fabrication of high aspect-ratio, sub-50 nm-featured oxide nanopatterns with 3D morphologies. These results confirm the potential of vapor-phase material infiltration in directly nanopatterning complexly structured metal oxides.
Graphene Nanopattern for Single-Crystal Film Growth, Defect Reduction and Layer Transfer
Thin film heterostructures are key building blocks for advanced electronic and optoelectronic devices. For this, direct heteroepitaxy has been pursued for decades, although it has been challenging to reduce crystal defects stemming from lattice mismatches and thermal mismatches between materials. The layer transfer method has been proposed as an alternative approach, wherein dissimilar materials are separately grown and then hetero-integrated. However, the applicability of layer transfer techniques is limited by several technical challenges, such as controllability, throughput, and damage to the substrate. Remote epitaxy, which is a recently developed method to produce single-crystalline membranes, is a promising approach but cannot be applied to elemental materials such as Si and Ge. In this work, we report graphene nanopattern as a universal template for the growth of single-crystal thin films that can be exfoliated as a freestanding form. This is realized by the chemical inertness of graphene, which allows selective nucleation at the exposed region, followed by lateral overgrowth onto graphene to form a planarized thin film. By employing graphene nanopattern, both group IV and III-V materials are utilized as the substrate as well as the epilayer. The epilayer can be exfoliated at the graphene interface because partially covered graphene effectively weakens the interface, which is corroborated by theoretical analyses of spalling theory. We reveal that graphene nanopattern not only works as a weakened interface for exfoliation, but also allows for dislocation reduction in heteroepitaxial films. This is because of the flexibility and the dangling-bond-free nature of graphene, which provides an additional path for strain relaxation. Therefore, these results represent a meaningful step toward production of high-quality single-crystal membranes that can be hetero-integrated.