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At least 19 records

Experimental Comparison of two Active Vibration Control Approaches: Velocity Feedback and Negative Capacitance Shunt Damping

This paper outlines a direct, experimental comparison between two established active vibration control techniques. Active vibration control methods, many of which rely upon piezoelectric patches as actuators and/or sensors, have been widely studied, showing many advantages over passive techniques. However, few direct comparisons between different active vibration control methods have been made to determine the performance benefit of one method over another. For the comparison here, the first control method, velocity feedback, is implemented using four accelerometers that act as sensors along with an analog control circuit which drives a piezoelectric actuator. The second method, negative capacitance shunt damping, consists of a basic analog circuit which utilizes a single piezoelectric patch as both a sensor and actuator. Both of these control methods are implemented individually using the same piezoelectric actuator attached to a clamped Plexiglas window. To assess the performance of each control method, the spatially averaged velocity of the window is compared to an uncontrolled response.

Beck, Benjamin↗

Miniature electrometer preamplifier effectively compensates for input capacitance

Negative capacitance preamplifier using a dual MOS /Metal Oxide Silicon/ transistor in conjunction with bipolar transistors is used with intracellular microelectrodes in recording bioelectric potentials. Applications would include use as a pickup plate video amplifier in storage tube tests and for pH and ionization chamber measurements.

Burrous, C. N.↗

Advanced microelectronics research for space applications, phase 2

Negative-resistance circuits with possible space flight applications are discussed. The basic design approach is to use impedance rotation, i.e., the conversion from capacitance to negative resistance, and from resistance to inductance by the phase shift of the transistor current gain at high frequencies. The subjects discussed in detail are the following: hybrid fabrication of VHF and UHF negative-resistance stages with lumped passive elements; formulation of measurement techniques to characterize transistors and to extend the frequency of negative-resistance transistor amplifiers to higher microwave frequencies; and derivation of transistor characteristics required to increase the frequency range of negative-resistance transistor stages.

Gaertner, W. W.↗

Low noise tuned amplifier

A bandpass amplifier employing a field effect transistor amplifier first stage is described with a resistive load either a.c. or directly coupled to the non-inverting input of an operational amplifier second stage which is loaded in a Wien Bridge configuration. The bandpass amplifier may be operated with a signal injected into the gate terminal of the field effect transistor and the signal output taken from the output terminal of the operational amplifier. The operational amplifier stage appears as an inductive reactance, capacitive reactance and negative resistance at the non-inverting input of the operational amplifier, all of which appear in parallel with the resistive load of the field effect transistor.

Kleinberg, L. L.↗

Material considerations for high frequency, high power capacitors

Dielectric materials chosen for use in this high frequency, high power capacitor must endure hard vacuum conditions, high currents (up to 125 A rms), and frequencies up to 40 kHz. Temperature requirements for this type of capacitor are that capacitor operation must be efficient up to 125 C. A more stringent requirement for the sold dielectric is that the temperature coefficient of dissipation factor should indicate self stabilization well below 125 C. In addition, the dielectric temperature coefficient of capacitance should be negative.

White, W.↗

Ultra-stable oscillator with complementary transistors

A high frequency oscillator, having both good short and long term stability, is formed by including a piezoelectric crystal in the base circuit of a first bi-polar transistor circuit, the bi-polar transistor itself operated below its transitional frequency and having its emitter load chosen so that the input impedance, looking into the base thereof, exhibits a negative resistance in parallel with a capacitive reactance. Combined with this basic circuit is an auxiliary, complementary, second bi-polar transistor circuit of the same form with the piezoelectric crystal being common to both circuits. By this configuration small changes in quiescent current are substantially cancelled by opposite variations in the second bi-polar transistor circuit, thereby achieving from the oscillator a signal having its frequency of oscillation stable over long time periods as well as short time periods.

Kleinberg, L. L.↗

Characteristics of EMI generated by negative metal-positive dielectric voltage stresses due to spacecraft charging

Charging of spacecraft surfaces by the environmental plasma can result in differential potentials between metallic structure and adjacent dielectric surfaces in which the relative polarity of the voltage stress is either negative dielectric/positive metal or negative metal/positive dielectric. Negative metal/positive dielectric is a stress condition that may arise if relatively large areas of spacecraft surface metals are shadowed from solar UV and/or if the UV intensity is reduced as in the situation in which the spacecraft is entering into or leaving eclipse. The results of experimental studies of negative metal/positive dielectric systems are given. Information is given on: enhanced electron emission I-V curves; e(3) corona noise vs e(3) steady-state current; the localized nature of e(3) and negative metal arc discharge currents; negative metal arc discharges at stress thresholds below 1 kilovolt; negative metal arc discharge characteristics; dependence of blowoff arc discharge current on spacecraft capacitance to space (linear dimension); and damage to second surface mirrors due to negative metal arcs.

Chaky, R. C.↗

ISS And Space Environment Interactions Without Operating Plasma Contactor

The International Space Station (ISS) will be the largest, highest power spacecraft placed in orbit. Because of this the design of the electrical power system diverged markedly from previous systems. The solar arrays will operate at 160 V and the power distribution voltage will be 120 V. The structure is grounded to the negative side of the solar arrays so under the right circumstances it is possible to drive the ISS potential very negative. A plasma contactor has been added to the ISS to provide control of the ISS structure potential relative to the ambient plasma. The ISS requirement is that the ISS structure not be greater than 40 V positive or negative of local plasma. What are the ramifications of operating large structures with such high voltage power systems? The application of a plasma contactor on ISS controls the potential between the structure and the local plasma, preventing degrading effects. It is conceivable that there can be situations where the plasma contactor might be non-functional. This might be due to lack of power, the need to turn it off during some of the build-up sequences, the loss of functionality for both plasma contactors before a replacement can be installed, similar circumstances. A study was undertaken to understand how important it is to have the contactor functioning and how long it might be off before unacceptable degradation to ISS could occur. The details of interaction effects on spacecraft have not been addressed until driven by design. This was true for ISS. If the structure is allowed to float highly negative impinging ions can sputter exposed conductors which can degrade the primary surface and also generate contamination due to the sputtered material. Arcing has been known to occur on solar arrays that float negative of the ambient plasma. This can also generate electromagnetic interference and voltage transients. Much of the ISS structure and pressure module surfaces exposed to space is anodized aluminum. The anodization thickness is very thin to provide the required solar absorptance and emittance. For conditions where ISS structure can charge negative a large percentage of the array voltage, the dielectric strength of this layer is low, and dielectric breakdown (arcing) can occur. The energy stored capacitively in the structure can be delivered to the arc. The mechanisms by which this energy is delivered and how much of the energy is available hasn't been fully quantified. Questions have been raised regarding the possibility of whether a sustained arc might result due to current collected by the solar arrays from local plasma. It was postulated that even if dielectric breakdown didn't occur, impacts due to micrometeoroids and space debris could penetrate thin layers of dielectric on ISS and initiate an arc due to the coupling provided by the dense local plasma produced by the impact. This was proven in experiments conducted jointly by MSFC and Auburn University. A target chamber with a simulated ionospheric plasma and a biased, anodized aluminum plate and a 1-microfarad capacitor was used. The plate was then impacted by 75-micron particles accelerated to orbital velocity. Arc discharges were sustained for higher voltages but a threshold appears below which no discharge was initiated. Most items without an exposed power system will float electrically near the local plasma potential. This is true of the Space Shuttle, an Astronaut on EVA, and similar items. The structure of ISS might be at a large negative voltage. Therefore, capacitively stored energy can be transferred during docking, installing external boxes and equipment and Astronaut contact with ISS structure. The circumstances of when this can happen and the resulting effects are evaluated in this study. Also, a crewmember on EVA might be in the vicinity of an arc. All safety aspects of such an encounter including charging, molten particles from the arc site and EMI have been evaluated. This paper will report on the total results of this study focussed on the 4A configuration, scheduled to be complete in November, 2000. Interactions such as arcing, debris induced arcs, sustained arcs, sputtering, contamination from sputtering and arcing, docking interactions and Astronaut safety issues will all be addressed.

Carruth, M. R., Jr.↗

Negative Differential Resistance (NDR) frequency conversion with gain

The dependence of the I-V characteristic of the negative differential resistance (NDR) devices on the power level and frequency of the rf input signal has been theoretically analyzed with a modified large- and small-signal nonlinear circuit analysis program. The NDR devices we used in this work include both the tunnel diode (without the antisymmetry in the I-V characteristic) and resonant-tunneling devices (with the antisymmetry in the I-V characteristic). Absolute negative conductance can be found from a zero-biased resonant tunneling device when the applied pump power is within a small range. This study verifies the work of Sollner et al. Variable negative conductances at the fundamental and harmonic frequencies can also be obtained from both the unbiased and biased tunnel diodes. The magnitude of the negative conductances can be adjusted by varying the pump amplitude -- a very useful circuit property. However, the voltage range over which the negative conductance occurs moves towards the more positive side of the voltage axis with increasing frequency. Furthermore, the range of the pumping amplitude to obtain negative conductance varies with the parasitics (resistance and capacitance) of the device. The theoretical observation of the dependence of the I-V characteristic of the NDR devices on the power and frequency of the applied pump signal is supported by the experimental results. In addition, novel functions of a NDR device such as self-oscillating frequency multiplier and mixer with gain have been experimentally demonstrated. The unbiased oscillator have also been successfully realized with a NDR device with an antisymmetrical I-V characteristic. Finally, the applications of these device functions will be discussed.

Hwu, R. J.↗

Electrostatic Power Generation from Negatively Charged, Simulated Lunar Regolith

Research was conducted to develop an electrostatic power generator for future lunar missions that facilitate the utilization of lunar resources. The lunar surface is known to be negatively charged from the constant bombardment of electrons and protons from the solar wind. The resulting negative electrostatic charge on the dust particles, in the lunar vacuum, causes them to repel each other minimizing the potential. The result is a layer of suspended dust about one meter above the lunar surface. This phenomenon was observed by both Clementine and Surveyor spacecrafts. During the Apollo 17 lunar landing, the charged dust was a major hindrance, as it was attracted to the astronauts' spacesuits, equipment, and the lunar buggies. The dust accumulated on the spacesuits caused reduced visibility for the astronauts, and was unavoidably transported inside the spacecraft where it caused breathing irritation [1]. In the lunar vacuum, the maximum charge on the particles can be extremely high. An article in the journal "Nature", titled "Moon too static for astronauts?" (Feb 2, 2007) estimates that the lunar surface is charged with up to several thousand volts [2]. The electrostatic power generator was devised to alleviate the hazardous effects of negatively charged lunar soil by neutralizing the charged particles through capacitive coupling and thereby simultaneously harnessing power through electric charging [3]. The amount of power generated or collected is dependent on the areal coverage of the device and hovering speed over the lunar soil surface. A thin-film array of capacitors can be continuously charged and sequentially discharged using a time-differentiated trigger discharge process to produce a pulse train of discharge for DC mode output. By controlling the pulse interval, the DC mode power can be modulated for powering devices and equipment. In conjunction with a power storage system, the electrostatic power generator can be a power source for a lunar rover or other systems. The negatively charged lunar soil would also be neutralized mitigating some of the adverse effects resulting from lunar dust.

Choi, Sang H.↗

Rapid and precise measurement of flatband voltage

The paper outlines the design, principles of operation, and calibration of a five-IC network intended to give a rapid, precise, and automatic determination of the flatband voltage of MOS capacitors. The basic principle of measurement is to compare the analog output voltage of a capacitance meter - which is directly proportional to the capacitance being measured - with a preset or dialed-in voltage proportional to the calculated flatband capacitance by means of a comparator circuit. The bias to the MOS capacitor supplied through the capacitance meter is provided by a ramp voltage going from a negative toward a positive voltage level and vice versa. The network employs two monostable multivibrators for reading and recording the flatband voltage and for resetting the initial conditions and restarting the ramp. The flatband voltage can be held and read on a digital voltmeter.

Li, S. P.↗

Capacitively-coupled data receiver clipper stage

Circuit technique compensates for dc offset and asymmetry in dc clipping levels, negates unbalance in input waveform that causes voltage offset at end of data word, blocks any dc component that is generated by asymmetrical operation of clipper, and improves data threshold detection.

Saunders, F. W.↗

Characterization of Rapid Charging Events Due to Sheath Capacitance and Impact on the International Space Station Plasma Hazard Process

During an Extravehicular Activity (EVA), if the Extravehicular Mobility Unit (EMU) makes galvanic contact with the International Space Station (ISS), a negative Floating Potential (FP) can lead to an arcing hazard when it exceeds -45.5 V, and a positive FP can produce a DC current high enough to stimulate the astronaut’s muscles (5 mA), and also cause a hazard. The Boeing Space Environments team developed and utilizes a Plasma Interaction Model (PIM) in order to calculate the ISS FP based on the plasma environment, ISS velocity, geomagnetic field, solar array and ISS orientation, and solar array regulation to support EVA planning operations. Presently, the model excludes the sheath capacitance, resulting in the total potential drop being across the dielectric surface of the vehicle. Data from the Floating Potential Measurement Unit (FPMU) show this assumption to be generally true. However, Rapid Charging Events (RCE) are often observed in the FPMU data at eclipse exit when the electron number density, Ne, is low (less than 5(sub e)10 m (exp-3)). During these events, the FP can rise more than 40 V in one to five seconds. There is then a relaxation phase where the FP drops back to the normal FP values. The PIM model is not capable of producing these RCEs. It was thought that the inclusion of the sheath in PIM could improve the charging predictions, particularly as related to RCEs. A parametric study was performed to determine what portion of the measured FP is across the sheath for a range of Ne experienced by the ISS, and if the inclusion of the sheath in PIM is necessary. Results show that the potential drop across the sheath is negligible at times when the N(sub e) is greater than 1(sub e)11 m-3. However, there appears to be a transitional region between 1(sub e)10 m(exp -3) and 1(sub e)11 m(exp -3) where the sheath capacitance becomes more significant. During those conditions the potential drop across the sheath can be larger than the potential drop across the dielectric for short periods (1-5 seconds). These results agree remarkably well with measurements made by the FPMU. The inclusion of the sheath explains why high charging measurements occur when the Ne is low at eclipse exit and even times when the solar arrays are not a significant driver (i.e., potentials often rise as the ISS flies through spread-F). Results also show that the RCEs are not a safety concern because the potential drop across the dielectric surface does not exceed -45.5 V. In that case, the EMU would not arc. This gives high confidence in the low probability of an arcing hazard occurring.

plasma environment↗

Low-cost FM oscillator for capacitance type of blade tip clearance measurement system

The frequency-modulated (FM) oscillator described is part of a blade tip clearance measurement system that meets the needs of a wide class of fans, compressors, and turbines. As a result of advancements in the technology of ultra-high-frequency operational amplifiers, the FM oscillator requires only a single low-cost integrated circuit. Its carrier frequency is 42.8 MHz when it is used with an integrated probe and connecting cable assembly consisting of a 0.81 cm diameter engine-mounted capacitance probe and a 61 cm long hermetically sealed coaxial cable. A complete circuit analysis is given, including amplifier negative resistance characteristics. An error analysis of environmentally induced effects is also derived, and an error-correcting technique is proposed. The oscillator can be calibrated in the static mode and has a negative peak frequency deviation of 400 kHz for a rotor blade thickness of 1.2 mm. High-temperature performance tests of the probe and 13 cm of the adjacent cable show good accuracy up to 600 C, the maximum permissible seal temperature. The major source of error is the residual FM oscillator noise, which produces a clearance error of + or - 10 microns at a clearance of 0.5 mm. The oscillator electronics accommodates the high rotor speeds associated with small engines, the signals from which may have frequency components as high as 1 MHz.

Barranger, John P.↗

Extrapolation of electrical breakdown currents from the laboratory to Space Station

Recent experiments conducted in a plasma chamber at NASA/MSFC on anodized aluminum coatings representative of Space Station Freedom design show that if the aluminum used as a thermal control coating is biased more than 80 V negative with respect to the plasma, the anodization will experience dielectric breakdown. As the thin anodization layer creates a capacitive charge buildup, large currents are observed during the arc. How plasma generation at the arc site can support large currents and discharge the surface charge layer is investigated. The importance for Space Station Freedom is that currents similar to those observed in the laboratory can be observed on orbit.

Vaughn, Jason A.↗

Analysis of differential and active charging phenomena on ATS-5 and ATS-6

Spacecraft charging on the differential charging and artificial particle emission experiments on ATS 5 and ATS 6 were studied. Differential charging of spacecraft surfaces generated large electrostatic barriers to spacecraft generated electrons, from photoemission, secondary emission, and thermal emitters. The electron emitter could partially or totally discharge the satellite, but the mainframe recharged negatively in a few 10's of seconds. The time dependence of the charging behavior was explained by the relatively large capacitance for differential charging in comparison to the small spacecraft to space capacitance. A daylight charging event on ATS 6 was shown to have a charging behavior suggesting the dominance of differential charging on the absolute potential of the mainframe. Ion engine operations and plasma emission experiments on ATS 6 were shown to be an effective means of controlling the spacecraft potential in eclipse and sunlight. Elimination of barrier effects around the detectors and improving the quality of the particle data are discussed.

Olsen, R. C.↗

A micrometeoroid deceleration and capture experiment: Conceptual experiment design description

The preliminary conceptual design for a cosmic dust collector is described. For the case of low Earth orbit (LEO), dust particles enter the collector through the collimator at a few volts negative potential due to charging in the ionosphere, at a velocity of 1 to 50 km/sec. The particles then pass through an electron stream and are charged to about 1 KV negative (regardless of incoming polarity). The 1 KV negatively charged particle then passes through three sensing grids coupled to charge sensitive preamps (CSP). The comparison of the two pulses provided by S(1) and S(2) are utilized by the microprocessor to determine the charge, q, on the particle (pulse amplitude) and its velocity, v (by time of flight). The third sensing grid, S(3), is kept at about 20 KV negative so that the dust particle will now be decelerated in passing from S(2) (zero potential) to S(3). S(3) is capacitively coupled to its CSP and the pulse from S(3) is utilized by the microprocessor to determine the particle's energy, E, and therefore its mass, m (again by time of flight) by comparison with the pulses from S(1) and S(2). The microprocessor can now precisely program the high-voltage switching network for the proper timing in the grounding of the successive deceleration grids. As determined by the microprocessor, each successive deceleration grid is grounded just after the dust particle passes, thus reducing the particle's energy by the amount q*100 KV at each stage. The microprocessor also determines at which stage the particle will fall below a certain critical energy where all remaining grids remain unswitched so that the particle will drift to the collector. The collector is kept at about 100V positive and is covered with gold foil to eliminate contamination and is removable for subsequent return to earth for detailed analysis.

Wolfe, J. H.↗

A Schottky/2-DEG varactor diode for millimeter and submillimeter wave multiplier applications

A new Schottky diode is investigated for use as a multiplier element in the millimeter and submillimeter wavelength regions. The new diode is based on the Schottky contact at the edge of a 2-dimensional electron gas (2-DEG). As a negative voltage is applied to the Schottky contact, the depletion layer between the Schottky contact and the 2-DEG expands and the junction capacitance decreases, resulting in a nonlinear capacitance-voltage characteristic. In this paper, we outline the theory, design, fabrication, and evaluation of the new device. Recent results include devices having cutoff frequencies of 1 THz and above. Preliminary multiplier results are also presented.

Peatman, W. C. B.↗