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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Computer-oriented synthesis of wide-band non-uniform negative resistance amplifiers

This paper presents a synthesis procedure which provides design values for broad-band amplifiers using non-uniform negative resistance devices. Employing a weighted least squares optimization scheme, the technique, based on an extension of procedures for uniform negative resistance devices, is capable of providing designs for a variety of matching network topologies. It also provides, for the first time, quantitative results for predicting the effects of parameter element variations on overall amplifier performance. The technique is also unique in that it employs exact partial derivatives for optimization and sensitivity computation. In comparison with conventional procedures, significantly improved broad-band designs are shown to result.

Branner, G. R.↗
NASA NTRS1984

Stability of multifrequency negative-resistance oscillators

A general criterion is derived for the stability of a negative-resistance oscillator with respect to small perturbations in the operating point. The derivation applies when the oscillator output consists of an arbitrary number of related frequency components, including possible nonharmonic components. Examples are given of the application of the stability criterion to coaxial IMPATT oscillator circuits, with experimental verification of the frequency and output power at theoretically determined stable operating points.

Bates, B. D.↗
NASA NTRS1981

Variable N-type negative resistance in an injection-gated double-injection diode

Double-injection (DI) switching devices consist of p+ and n+ contacts (for hole and electron injection, respectively), separated by a near intrinsic semiconductor region containing deep traps. Under proper conditions, these devices exhibit S-type differential negative resistance (DNR) similar to silicon-controlled rectifiers. With the added influence of a p+ gate appropriately placed between the anode (p+) and cathode (n+), the current-voltage characteristic of the device has been manipulated for the first time to exhibit a variable N-type DNR. The anode current and the anode-to-cathode voltage levels at which this N-type DNR is observed can be varied by changing the gate-to-cathode bias. In essence, the classical S-type DI diode can be electronically transformed into an N-type diode. A first-order phenomenological model is proposed for the N-type DNR.

Kapoor, A. K.↗
NASA NTRS1971

Advanced microelectronics research for space applications, phase 2

Negative-resistance circuits with possible space flight applications are discussed. The basic design approach is to use impedance rotation, i.e., the conversion from capacitance to negative resistance, and from resistance to inductance by the phase shift of the transistor current gain at high frequencies. The subjects discussed in detail are the following: hybrid fabrication of VHF and UHF negative-resistance stages with lumped passive elements; formulation of measurement techniques to characterize transistors and to extend the frequency of negative-resistance transistor amplifiers to higher microwave frequencies; and derivation of transistor characteristics required to increase the frequency range of negative-resistance transistor stages.

Gaertner, W. W.↗
NASA NTRS1992

Negative Differential Resistance (NDR) frequency conversion with gain

The dependence of the I-V characteristic of the negative differential resistance (NDR) devices on the power level and frequency of the rf input signal has been theoretically analyzed with a modified large- and small-signal nonlinear circuit analysis program. The NDR devices we used in this work include both the tunnel diode (without the antisymmetry in the I-V characteristic) and resonant-tunneling devices (with the antisymmetry in the I-V characteristic). Absolute negative conductance can be found from a zero-biased resonant tunneling device when the applied pump power is within a small range. This study verifies the work of Sollner et al. Variable negative conductances at the fundamental and harmonic frequencies can also be obtained from both the unbiased and biased tunnel diodes. The magnitude of the negative conductances can be adjusted by varying the pump amplitude -- a very useful circuit property. However, the voltage range over which the negative conductance occurs moves towards the more positive side of the voltage axis with increasing frequency. Furthermore, the range of the pumping amplitude to obtain negative conductance varies with the parasitics (resistance and capacitance) of the device. The theoretical observation of the dependence of the I-V characteristic of the NDR devices on the power and frequency of the applied pump signal is supported by the experimental results. In addition, novel functions of a NDR device such as self-oscillating frequency multiplier and mixer with gain have been experimentally demonstrated. The unbiased oscillator have also been successfully realized with a NDR device with an antisymmetrical I-V characteristic. Finally, the applications of these device functions will be discussed.

Hwu, R. J.↗
NASA NTRS1987

Temperature responsive transmitter

A temperature responsive transmitter is provided in which frequency varies linearly with temperature. The transmitter includes two identically biased transistors connected in parallel. A capacitor, which reflects into the common bases to generate negative resistance effectively in parallel with the capacitor, is connected to the common emitters. A crystal is effectively in parallel with the capacitor and the negative resistance. Oscillations occur if the magnitude of the absolute value of the negative resistance is less than the positive resistive impedance of the capacitor and the inductance of the crystal. The crystal has a large linear temperature coefficient and a resonant frequency which is substantially less than the gain-bandwidth product of the transistors to ensure that the crystal primarily determines the frequency of oscillation. A high-Q tank circuit having an inductor and a capacitor is connected to the common collectors to increase the collector current flow which in turn enhances the radiation of the oscillator frequency by the inductor.

Kleinberg, Leonard L.↗
NASA NTRS1989

Computer analysis of the negative differential resistance switching phenomenon of double-injection devices

By directly solving the semiconductor differential equations for the double-injection (DI) devices involving two interacting deep levels, the authors studied the negative differential resistance switching characteristic and its relationship with the device dimension, doping level, and dependence on the deep impurity profile. Computer simulation showed that although one can increase the threshold voltage by increasing the device length, the excessive holding voltage that would follow would put this device in a very limited application such as pulse power source. The excessive leakage current in the low conductance state also jeopardizes the attempt to use the device for any practical purpose. Unless there are new materials and deep impurities found that have a great differential hole and electron capture cross sections and a reasonable energy bandgap for low intrinsic carrier concentration, no big improvement in the fate of DI devices is expected in the near future.

Shieh, Tsay-Jiu↗
NASA NTRS1990

Double layers in contactor plasmas

The concept of using a hollow cathode to establish a low impedance contact between a spacecraft and the ambient plasma continues to gain in popularity, and is often then referred to as a plasma contactor. A growing number of studies indicate that large contact currents can be supported with small potential difference between the contactor and the ambient plasma. Results will be presented from a simple one-dimensional spherical model that obtains potentials from the solution of Poisson's equation, and particle densities from a turning point formalism that includes particle angular momentum. The neglect of collisions and magnetic field limits the realism. However, the results illustrate the effect of double layers that can form at the interface between contactor and ambient plasmas, when there is any voltage differential between the contactor and the ambient. The I-V characteristic of this model shows the usual space charge depends upon collection when the contactor flux is lower than some threshold; independence of I from variation in V when the flux is slightly greater than that threshold, and (numerical ?) instability for excessive flux suggesting the possibility of negative resistance. Even if a real I-V characteristic does not exhibit negative resistance, flat spots or high resistance regions may still be troublesome (or useful) to the total circuit.

Cooke, David L.↗
NASA NTRS1994

Active antenna

An antenna, which may be a search coil, is connected to an operational amplifier circuit which provides negative impedances, each of which is in the order of magnitude of the positive impedances which characterize the antenna. The antenna is connected to the inverting input of the operational amplifier; a resistor is connected between the inverting input and the output of the operational amplifier; a capacitor-resistor network, in parallel, is connected between the output and the noninverting input of the operational amplifier; and a resistor is connected from the noninverting input and the circuit common. While this circuit provides a negative resistance and a negative inductance, in series, which appear, looking into the noninverting input of the operational amplifier, in parallel with the antenna, these negative impedances appear in a series loop with the antenna positive impedances, so as to algebraically add. This circuit is tuned by varying the various circuit components so that the negative impedances are very close, but somewhat less, in magnitude, to the antenna impedances. The result is to increase the sensitivity of the antenna by lowering its effective impedance. This, in turn, increases the effective area of the antenna, which may be broadband.

Sutton, John F.↗
NASA NTRS2006

Multichannel X-Band Dielectric-Resonator Oscillator

A multichannel dielectric-resonator oscillator (DRO), built as a prototype of a local oscillator for an X-band transmitter or receiver, is capable of being electrically tuned among and within 26 adjacent frequency channels, each 1.16 MHz wide, in a band ranging from 7,040 to 7,070 GHz. The tunability of this oscillator is what sets it apart from other DROs, making it possible to use mass-produced oscillator units of identical design in diverse X-band applications in which there are requirements to use different fixed frequencies or to switch among frequency channels. The oscillator (see figure) includes a custom-designed voltage-controlled-oscillator (VCO) monolithic microwave integrated circuit (MMIC), a dielectric resonator disk (puck), and two varactor-coupling circuits, all laid out on a 25-mil (0.635-mm)-thick alumina substrate having a length and width of 17.8 mm. The resonator disk has a diameter of 8.89 mm and a thickness of 4.01 mm. The oscillator is mounted in an 8.9-mm-deep cavity in a metal housing. The VCO MMIC incorporates a negative- resistance oscillator amplifier along with a buffer amplifier. The resonator disk is coupled to a microstrip transmission line connected to the negative-resistance port of the VCO MMIC. The two varactor-coupling circuits include microstrip lines, laid out orthogonally to each other, for coupling with the resonator disk. Each varactor microstrip line is DC-coupled to an external port via a microwave choke. One varactor is used for coarse tuning to select a channel; the other varactor is used (1) for fine tuning across the 1.16-MHz width of each channel and (2) as a feedback port for a phase-lock loop. The resonator disk is positioned to obtain (1) the most desirable bandwidth, (2) relatively tight coupling with the microstrip connected to the coarse-tuning varactor, and (3) relatively loose coupling with the microstrip connected to the fine-tuning varactor. Measurements of performance showed that the oscillator can be switched among any of the 26 channels and can be phase-locked to a nominal frequency in any channel. The degree of nonlinearity of tuning was found not to exceed 2.5 percent. The tuning sensitivity was found to be 6.15 MHz/V at a bias offset of -2 V on the phase-lock-loop varactor. The phase noise of the oscillator in free-running operation was found to be -107 dBc/Hz (where dBc signifies decibels relative to the carrier signal) at 100 kHz away from the carrier frequency.

Mysoor, Narayan↗
NASA NTRS2009

Fabricating Radial Groove Gratings Using Projection Photolithography

Projection photolithography has been used as a fabrication method for radial grove gratings. Use of photolithographic method for diffraction grating fabrication represents the most significant breakthrough in grating technology in the last 60 years, since the introduction of holographic written gratings. Unlike traditional methods utilized for grating fabrication, this method has the advantage of producing complex diffractive groove contours that can be designed at pixel-by-pixel level, with pixel size currently at the level of 45 45 nm. Typical placement accuracy of the grating pixels is 10 nm over 30 nm. It is far superior to holographic, mechanically ruled or direct e-beam written gratings and results in high spatial coherence and low spectral cross-talk. Due to the smooth surface produced by reactive ion etch, such gratings have a low level of randomly scattered light. Also, due to high fidelity and good surface roughness, this method is ideally suited for fabrication of radial groove gratings. The projection mask is created using a laser writer. A single crystal silicon wafer is coated with photoresist, and then the projection mask, with its layer of photoresist, is exposed for patterning in a stepper or scanner. To develop the photoresist, the fabricator either removes the exposed areas (positive resist) of the unexposed areas (negative resist). Next, the patterned and developed photoresist silicon substrate is subjected to reactive ion etching. After this step, the substrate is cleaned. The projection mask is fabricated according to electronic design files that may be generated in GDS file format using any suitable CAD (computer-aided design) or other software program. Radial groove gratings in off-axis grazing angle of incidence mount are of special interest for x-ray spectroscopy, as they allow achieving higher spectral resolution for the same grating area and have lower alignment tolerances than traditional in-plane grating scheme. This is especially critical for NASA Constellation- X project that will utilize hundreds of gratings all of which need to be precisely aligned for x-ray observation of space.

Iazikov, Dmitri↗
NASA NTRS1987

Low-cost FM oscillator for capacitance type of blade tip clearance measurement system

The frequency-modulated (FM) oscillator described is part of a blade tip clearance measurement system that meets the needs of a wide class of fans, compressors, and turbines. As a result of advancements in the technology of ultra-high-frequency operational amplifiers, the FM oscillator requires only a single low-cost integrated circuit. Its carrier frequency is 42.8 MHz when it is used with an integrated probe and connecting cable assembly consisting of a 0.81 cm diameter engine-mounted capacitance probe and a 61 cm long hermetically sealed coaxial cable. A complete circuit analysis is given, including amplifier negative resistance characteristics. An error analysis of environmentally induced effects is also derived, and an error-correcting technique is proposed. The oscillator can be calibrated in the static mode and has a negative peak frequency deviation of 400 kHz for a rotor blade thickness of 1.2 mm. High-temperature performance tests of the probe and 13 cm of the adjacent cable show good accuracy up to 600 C, the maximum permissible seal temperature. The major source of error is the residual FM oscillator noise, which produces a clearance error of + or - 10 microns at a clearance of 0.5 mm. The oscillator electronics accommodates the high rotor speeds associated with small engines, the signals from which may have frequency components as high as 1 MHz.

Barranger, John P.↗