Observation of structural damage in lithium- doped silicon solar cells produced by neutron irradiation
Form of structural damage in Li-doped p-n silicon solar cells produced by fast neutron irradiation
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Form of structural damage in Li-doped p-n silicon solar cells produced by fast neutron irradiation
Characteristics of damage produced in silicon semiconductors by neutron irradiation
Study regions of lattice disorder produced in lithium-doped float-zone melted n/p-type silicon solar cells by irradiation with monoenergetic neutrons at doses between 10 to the 10th and 10 to the 13th per cu cm. The defect regions were revealed by chemically etching the surface of the solar cells and by observing carbon replicas in an electron microscope. It was found that the defect density increased with increasing irradiation dose and increased lithium content, whereas the average defect diameter was found to decrease. From thermal annealing experiments it was found that in the lithium-doped material the defect structure was stable at temperatures between 300 and 1200 K. This was found to be in contrast to the undoped material where at the lowest doses considerable annealing was observed to occur. These results are discussed in terms of the theoretical predictions and models of defect clusters proposed by Gossick (1959) and Crawford and Cleland (1959).
Etching techniques for undoped and lithium doped silicon solar cells and observation by surface replication and thin film transmission electron microscopy
The degradation in performance of lithium-compensated silicon nuclear particle detectors induced by irradiation at room temperature with 0.6-MeV and 1.5-MeV electrons, 1.9-MeV protons, and fast neutrons from a plutonium-beryllium source has been investigated. With increasing fluence, the irradiations produced an increase of detector leakage current, noise, capacitance, and a degradation in the performance of the detector as a charged-particle energy spectrometer. Following the irradiations, annealing effects were observed when the detectors were reverse-biased at their recommended operating voltages. Upon removal of bias, a continuous degradation of detector performance characteristics occurred. Detectors which had been damaged by electrons and protons exhibited a stabilization in their characteristics within two weeks after irradiation, whereas detectors damaged by neutrons had a continuous degradation of performance over a period of several months.
High intensity neutron irradiation effects on physical properties of solids determined by underground nuclear explosions
Magnetization studies of polycrystalline Bi(1.8)Pb(0.3)Sr2Ca2Cu3O10 superconductor, prior to and after neutron irradiation, showed an increase in J(sub c) due to irradiation damage. Analysis of the equilibrium magnetization revealed significant increases in other more fundamental properties. In particular, the London penetration depth increased by approximately 15 percent following irradiation with 8 x 10(exp 16) neutrons/sq cm. Corresponding changes were observed in the upper critical magnetic field H(sub c2). However, the most fundamental thermodynamic property, the superconductive condensation energy F(sub c), was unaffected by the moderate level of neutron-induced damage.
Fast neutron irradiation effect on niobium nitride current carrying capacity, showing enhancement
The improved infrared response (IRR) technique has been used to qualitatively compare radiation effects on Si(Li) detectors with energy levels reported for silicon in the literature. Measurements have been made on five commercial silicon detectors and one fabricated in-house, both before and after irradiation with fast neutrons, 1.9-MeV protons, and 1.6-MeV electrons. Effects dependent upon the extent of radiation damage have been observed. It seems likely that the photo-EMF, or photo-voltage, effect is the basic mechanism for the observation of IRR in p-i-n diodes with a wide i-region. Experimental characteristics of the IRR measurement are in agreement with those of the photovoltage effect.
The high charge and high energy (HZE) particle radiation environment in space interacts with spacecraft materials and the human body to create a population of neutrons encompassing a broad kinetic energy spectrum. As an HZE ion penetrates matter, there is an increasing chance of fragmentation as penetration depth increases. When an ion fragments, secondary neutrons are released with velocities up to that of the primary ion, giving some neutrons very long penetration ranges. These secondary neutrons have a high relative biological effectiveness, are difficult to effectively shield, and can cause more biological damage than the primary ions in some scenarios. Ground-based irradiation experiments that simulate the space radiation environment must account for this spectrum of neutrons. Using the Particle and Heavy Ion Transport Code System (PHITS), it is possible to simulate a neutron environment that is characteristic of that found in spaceflight. Considering neutron dosimetry, the focus lies on the broad spectrum of recoil protons that are produced in biological targets. In a biological target, dose at a certain penetration depth is primarily dependent upon recoil proton tracks. The PHITS code can be used to simulate a broad-energy neutron spectrum traversing biological targets, and it account for the recoil particle population. This project focuses on modeling a neutron beamline irradiation scenario for determining dose at increasing depth in water targets. Energy-deposition events and particle fluence can be simulated by establishing cross-sectional scoring routines at different depths in a target. This type of model is useful for correlating theoretical data with actual beamline radiobiology experiments. Other work exposed human fibroblast cells to a high-energy neutron source to study micronuclei induction in cells at increasing depth behind water shielding. Those findings provide supporting data describing dose vs. depth across a water-equivalent medium. This poster presents PHITS data suggesting an increase in dose, up to roughly 10 cm depth, followed by a continual decrease as neutrons come to a stop in the target.
Development of method of direct correlation of radiation damage with time-integrated activation of neutron dosimeters
This study focuses on displacement damage induced dark current and Random Telegraph Signal (RTS) in STMicroelectronics P-Type photogate, a device moving away from the 4T Pinned-Photodiode, with a sensitive volume exclusively made of boron-doped P-type epitaxy, and collecting holes instead of electrons. Results show a typical trend for the shape of dark current and RTS degradation in CMOS Image Sensors with the exception that the measured generation rates seem 2 times smaller than typical literature values in irradiated silicon. Different hypothesis on the origin of this discrepancy are explored.
Fiber optics permanent damages induced by ionizing radiation after a long exposure in space and after laboratory tests were examined. Irradiation tests performed with radioactive sources (Sr90 - Y90) were validataed, computer coses used for the fluence and dose profile were verified. The performance of fiber optics waveguides in a low altitude orbit, and the origin of transmission losses in the material were dtermined. High sensitivity to ionizing radiations, however, may be a restriction for optic fiber use on satellites. Irradiation tests on these components using neutrons, gamma rays, and X-rays are carried out. Radiation damage on opticao materials, however, is strongly linked to the test conditions.
Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.
Topics related to processing and hardness assurance are considered, taking into account the radiation hardening of CMOS technologies, technological advances in the manufacture of radiation-hardened CMOS integrated circuits, CMOS hardness assurance through process controls and optimized design procedures, the application of operational amplifiers to hardened systems, a hard off-the-shelf SG1524 pulse width modulator, and the gamma-induced voltage breakdown anomaly in a Schottky diode. Basic mechanisms are examined, giving attention to chemical and structural aspects of the irradiation behavior of SiO2 films on silicon, experimental observations of the chemistry of the SiO2/Si interface, leakage current phenomena in irradiated SOS devices, the avalanche injection of holes into SiO2, the low-temperature radiation response of Al2O3 gate insulators, and neutron damage mechanisms in silicon at 10 K. Other subjects discussed are related to radiation effects in devices and circuits, space radiation effects, and aspects of simulation, energy deposition, and dosimetry.
The D60T, D62T, and D75T transistors in the nuclear reactor were irradiated with bias voltage and high current I sub c vs. V sub ec curves were obtained to evaluate gain degradation at high power levels. Pre- and post-irradiation high current switching tests were performed to evaluate the response. The gamma ray damage work done at Sandia was correlated with the neutron work done at the O.S.U. reactor with the above specified transistors. Theoretical analyses of damage and electrical performance were conducted in terms of semiconductor physics. The experimental high current pulser was improved in order to measure switching time changes which are less than one microsecond at currents of 100 to 200 amperes for in-situ testing.
Two techniques were studied for measuring changes in bone mass in rats. One technique measures the Ar-37 produced from calcium during neutron irradiation and the other measures the changes in the Na-22 content which has been incorporated within the rat bone. Both methods are performed in VIVO and cause no significant physiological damage. The Ar-37 leaves the body of a rat within an hour after being produced, and it can be quantitatively collected and measured with a precision of - or + 2% on the same rat. With appropriate irradiation conditions it appears that the absolute quantity of calcuim in any rat can be determined within - or + 3% regardless of animal size. The Na-22 when uniformly distributed in bone, can be used to monitor bone mineral turnover and this has been demonstrated in conditions of calcium deficiency during growth and also pregnancy coupled with calcium deficiency.
One nuclear electric propulsion (NEP) reactor systems under consideration is a hydride moderated thermal spectrum reactor fueled by high assay low enriched uranium (HALEU). While such a reactor is expected to yield the lightest HALEU reactor design, its development challenges grow exponentially with increasing mission demands, most notably power output, specific weight of the overall system (which may require operation at temperatures exceeding 1200 K), service lifetime, and human-rated reliability. Two of the greatest cost drivers are full-powered nuclear demonstrations and extensive material development campaigns, so it is important to consider options that can minimize the need for or complexity of such tasks. This paper discusses a structured framework being developed for assessing how NEP design choices, such as materials selection, neutronic features, and heat-removal technologies, can translate into project risk and how project performance goals can be traded with development cost.Reactors operating at high temperatures often require cutting-edge heat transfer technologies and creep-resistant materials. Use of new materials in high temperature reactors brings additional complication beyond those common to any new space materials development campaign. For example, such materials may not possess necessary neutronic cross-sectional or neutronic irradiation data. Similarly, use of new materials may significantly influence core neutronics; in some extreme cases, neutronic reactivity feed-back of certain new materials can vary during their service life as radiation damage impacts the scattering cross-section. In an affordable development approach, high fidelity modeling and simulation tools are used to identify and characterize potential ‘knees-in-the-curves’ in the relationship that exists between the mission characteristics and the project risk. Of particular significance is use of modern uncertainty management and variance reduction methods to perform gap analyses that feed into phenomena identification and ranking tables (PIRT) commonly used to communicate nuclear readiness levels. Model-based measurements techniques are used to design sub-scale experiments as a substitute to minimize orcompletely eliminate the need for nuclear demonstrations.This paper will describe the approach and present preliminary results. It will lay the groundwork for developing a set of metrics that can be broadly characterized as system nuclear readiness levels and advancement degree of difficulty for nuclear systems. Equally importantly, a goal of this paper is to initiate a dialogue among stakeholders on what is the sufficient level of maturity that is required for launching a demonstration unit.