Search NASA⌕ Search

SEARCH · Search NASA

Results for “neutron transmutation doping (NTD)”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

Neutron Transmutation Doped (NTD) germanium thermistors for sub-mm bolometer applications

Recent advances in the development of neutron transmutation doped (NTD) semiconductor thermistors fabricated from natural and controlled isotopic composition germanium are reported. The near ideal doping uniformity that can be achieved with the NTD process, the device simplicity of NTD Ge thermistors and the high performance of cooled junction field effect transistor preamplifiers led to the widespread acceptance of these thermal sensors in ground-based, airborne and spaceborne radio telescopes. These features made possible the development of efficient bolometer arrays.

Haller, E. E.↗

The Constellation-X Focal Plane Microcalorimeter Array: An NTD-Germanium Solution

The hallmarks of Neutron Transmutation Doped (NTD) germanium cryogenic thermistors include high reliability, reproducibility, and long term stability of bulk carrier transport properties. Using micro-machined NTD Ge thermistors with integral 'flying' leads, we can now fabricate two-dimensional arrays that are built up from a series of stacked linear arrays. We believe that this modular approach of building, assembling, and perhaps replacing individual modules of detectors is essential to the successful fabrication and testing of large multi-element instruments. Details of construction are presented.

Beeman, J.↗

NTD-GE Based Microcalorimeter Performance

Our group has been developing x-ray microcalorimeters consisting of neutron transmutation doped (NTD) germanium thermistors attached to superconducting tin absorbers. We discuss the performance of single pixel x-ray detectors, and describe an array technology. In this paper we describe the read-out circuit that allows us to measure fast signals in our detectors as this will be important in understanding the primary cause of resolution broadening. We describe briefly a multiplexing scheme that allows a number of different calorimeters to be read out using a single JFET. We list the possible causes of broadening and give a description of the experiment which best demonstrates the cause of the primary broadening source. We mention our strategy for finding a suitable solution to this problem and describe briefly a technology for building arrays of these calorimeters.

Bandler, Simon↗

The FABLE silicon detector array for comprehensive studies of fusion and breakup dynamics

The Fusion and Breakup of Light Elements (FABLE) array, comprised of ΔE-E telescopes of neutron-transmutation doped (NTD) Double-Sided Silicon Strip Detectors (DSSDs), has been developed and commissioned for future experiments at the Facility for Rare Isotope Beams (FRIB). FABLE was designed to perform measurements of complete and incomplete fusion cross sections, to help address the interplay between breakup and clustering in outcomes of reactions with exotic nuclides. Here, the FABLE array has been commissioned in a comprehensive study at the ReAccelerator facility ReA6 of the Facility for Rare Isotope Beams (FRIB), investigating the dynamics in the weakly-bound proton rich 7 Be reaction on 208 Pb targets.

Breakup↗

High-bandwidth frequency domain multiplexed readout of transition-edge sensors for neutrinoless double beta decay searches

The next-generation of cryogenic neutrinoless double-beta decay experiments require increasingly fast readout in order to improve background discrimination. These experiments, operated as cryogenic calorimeters at ∼ 10 mK, are usually read out by high-impedance neutron transmutation doped (NTD) thermistors, which provide good energy resolution, but are limited by ∼ 1 ms response times. Superconducting detectors, such as transition-edge sensors (TESs) with a time resolution of ∼ 100 μs, offer superior timing performance over NTD semiconductor bolometers. To make this technology viable for an application to a thousand or more channels, multiplexed readout is necessary in order to minimize the thermal load and radioactive contamination induced by the readout. Frequency-domain multiplexing readout (fMUX) for TESs, previously developed at Berkeley Lab and McGill University, is currently in use for mm-wave telescopes with detector sampling rates in the order of 100 Hz. We demonstrate a new readout system, based on the McGill/Berkeley digital fMux readout, to satisfy the higher bandwidth and noise requirements of the next generation of TES-instrumented cryogenic calorimeters. Each multiplexing readout module comprises 10 superconducting resonators in the 1–5 MHz range and a DC superconducting quantum interference device (DC-SQUID), interfaced to high-speed field programmable gate array (FPGA)-based electronics for digital signal processing and low-latency SQUID feedback. The new readout samples detectors at 156 kHz, three orders of magnitude faster than its cosmology-oriented predecessor, and demonstrates a stable feedback bandwidth of 3 kHz in a real TES-based system.

47 OTHER INSTRUMENTATION↗

Transmutation doping of silicon solar cells

Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

Wood, R. F.↗

Neutron transmutation doped Ge bolometers

Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

Haller, E. E.↗

Bolometric Array Detectors for Space-Borne Astronomy

Funding from the NASA Innovative Research Grant was used to develop bolometric detectors. As described in the proposal, silicon nitride micromesh ('spider-web') absorbers had been demonstrated at U.C. Berkeley but not developed to be flight-worthy devices. We proceeded to first fabricate bolometers with Neutron Transmutation Doped (NTD) Ge thermistors that demonstrated high optical coupling (Church et al. 1996) and were developed for a ground-based millimeter-wave receiver (Mauskopf et al. 1997). The next generation of devices used In bump-bonded thermistors to achieve devices with performance product NEP*sqrt(tau) = 3e - 18 j at 300 mK, demonstrating a full order of magnitude improvement over pervious devices. These devices achieved an NEP = 1e-18 W/rtHz (Murray et al. 1996) as promised in the proposal. Sensitivities as good as 1e - 19 W/rtHz appear achievable with the silicon nitride architecture (Bock et al. 1997). Finally, arrays of micromesh bolometers were shown to be feasible in the last year of the program by etching a large number of devices on a single silicon wafer (75 mm). Full arrays were subsequently demonstrated for selection on the ESA/NASA Far-Infrared Space Telescope (FIRST) in competition with detectors provided by CEA in France and GSFC in the US Micromesh bolometer arrays are now baselined for both the ESA/NASA Planck and FIRST missions.

Lange, Andrew E.↗

Microcalorimeters for High Resolution X-Ray Spectroscopy of Laboratory and Astrophysical Plasmas

The proposal has three major objectives. The first focuses on advanced neutron-transmutation-doped (NTD)-based microcalorimeter development. Our goal is to develop an array of microcalorimeters with sub- 5 eV energy resolution that can operate with pile-up-free throughput of at least 100 Hz per pixel. The second objective is to establish our microcalorimeter as an essential x-ray diagnostic for laboratory astrophysics studies. We propose to develop a dedicated microcalorimeter spectrometer for the EBIT (electron beam ion trap). This instrument will incorporate the latest detector and cryogenic technology that we have available. The third objective is to investigate innovative ideas related to possible flight opportunities. These include compact, long lived cryo-systems, ultra-low temperature cold stages, low mass and low power electronics, and novel assemblies of thin windows with high x-ray transmission.

Silver, E.↗

Microcalorimeters with Germanium Thermistors for High Resolution Soft and Hard X-ray Astronomy

This is a progress report for the first year of a three year Space Research and Technology (SR&T) grant to continue the advancement of neutron transmutation doped (NTD-based) microcalorimeters. We have re-prioritized certain aspects of the statement of work and chose to emphasize issues of array development in the first year rather than wait until year two. Consequently, some of the projects scheduled for the first year were delayed to the second year. Here we report on our progress to: a) Build and test a 1 x 4 element array and to investigate electrical and thermal cross-talk; b) Build a multiplexed 4 channel analog pulse processor; c) Build a digital pulse processor that can accommodate 4 channels with independent triggers; d) Develop a proportional thermal baseline restoration system compatible with the constant voltage mode of microcalorimeter operation.

Silver, E.↗

Effects of N-Doping on Silicon Carbide

Silicon carbide (SiC) is a widely preferred material within many industries due to its favorable properties, most notably its low electrical resistivity at high temperatures, excellent thermal conductivity, and sturdy mechanical properties. Doping, particularly n-type doping, is shown to extremely reduce electrical resistivity, but due to structural changes within the lattice caused by interaction with thermal neutrons, it is possible that other attributes of SiC may also be affected. In addition to review of past literature and data, four-point probe testing, scanning electron microscopy, nanoindentation, strength tests, differential scanning calorimetry and laser flash analysis were used to investigate the effects of n-doping 3C ß-phase SiC. According to temperature dependent measurements, electric resistivity and thermal conductivity both declined as dopant levels increases. Dopant levels are shown to have a significant effect on the mechanical performance of SiC, with the highest dopant levels (4 x 1018 cm-3) providing a 40% decrease in elastic modulus from 420 GPa to 258 GPa and a 30% decrease in hardness from 40 GPa to 27.7 GPa. These values are still above average and doped SiC may prove valuable for nuclear applications.

36 MATERIALS SCIENCE↗