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Results for “neutron transmutation doping (NTD)”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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DOE OSTI2025

The FABLE silicon detector array for comprehensive studies of fusion and breakup dynamics

The Fusion and Breakup of Light Elements (FABLE) array, comprised of ΔE-E telescopes of neutron-transmutation doped (NTD) Double-Sided Silicon Strip Detectors (DSSDs), has been developed and commissioned for future experiments at the Facility for Rare Isotope Beams (FRIB). FABLE was designed to perform measurements of complete and incomplete fusion cross sections, to help address the interplay between breakup and clustering in outcomes of reactions with exotic nuclides. Here, the FABLE array has been commissioned in a comprehensive study at the ReAccelerator facility ReA6 of the Facility for Rare Isotope Beams (FRIB), investigating the dynamics in the weakly-bound proton rich 7 Be reaction on 208 Pb targets.

Breakup↗
DOE OSTI2026

High-bandwidth frequency domain multiplexed readout of transition-edge sensors for neutrinoless double beta decay searches

The next-generation of cryogenic neutrinoless double-beta decay experiments require increasingly fast readout in order to improve background discrimination. These experiments, operated as cryogenic calorimeters at ∼ 10 mK, are usually read out by high-impedance neutron transmutation doped (NTD) thermistors, which provide good energy resolution, but are limited by ∼ 1 ms response times. Superconducting detectors, such as transition-edge sensors (TESs) with a time resolution of ∼ 100 μs, offer superior timing performance over NTD semiconductor bolometers. To make this technology viable for an application to a thousand or more channels, multiplexed readout is necessary in order to minimize the thermal load and radioactive contamination induced by the readout. Frequency-domain multiplexing readout (fMUX) for TESs, previously developed at Berkeley Lab and McGill University, is currently in use for mm-wave telescopes with detector sampling rates in the order of 100 Hz. We demonstrate a new readout system, based on the McGill/Berkeley digital fMux readout, to satisfy the higher bandwidth and noise requirements of the next generation of TES-instrumented cryogenic calorimeters. Each multiplexing readout module comprises 10 superconducting resonators in the 1–5 MHz range and a DC superconducting quantum interference device (DC-SQUID), interfaced to high-speed field programmable gate array (FPGA)-based electronics for digital signal processing and low-latency SQUID feedback. The new readout samples detectors at 156 kHz, three orders of magnitude faster than its cosmology-oriented predecessor, and demonstrates a stable feedback bandwidth of 3 kHz in a real TES-based system.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Effects of N-Doping on Silicon Carbide

Silicon carbide (SiC) is a widely preferred material within many industries due to its favorable properties, most notably its low electrical resistivity at high temperatures, excellent thermal conductivity, and sturdy mechanical properties. Doping, particularly n-type doping, is shown to extremely reduce electrical resistivity, but due to structural changes within the lattice caused by interaction with thermal neutrons, it is possible that other attributes of SiC may also be affected. In addition to review of past literature and data, four-point probe testing, scanning electron microscopy, nanoindentation, strength tests, differential scanning calorimetry and laser flash analysis were used to investigate the effects of n-doping 3C ß-phase SiC. According to temperature dependent measurements, electric resistivity and thermal conductivity both declined as dopant levels increases. Dopant levels are shown to have a significant effect on the mechanical performance of SiC, with the highest dopant levels (4 x 1018 cm-3) providing a 40% decrease in elastic modulus from 420 GPa to 258 GPa and a 30% decrease in hardness from 40 GPa to 27.7 GPa. These values are still above average and doped SiC may prove valuable for nuclear applications.

36 MATERIALS SCIENCE↗