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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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5 records

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NASA NTRS1992

The achievement of low contact resistance to indium phosphide: The roles of Ni, Au, Ge, and combinations thereof

We have investigated the electrical and metallurgical behavior of Ni, Au-Ni, and Au-Ge-Ni contacts on n-InP. We have found that very low values of contact resistivity rho(sub c) in the E-7 omega-sq cm range are obtained with Ni-only contacts. We show that the addition of Au to Ni contact metallization effects an additional order of magnitude reduction in rho(sub c). Ultra-low contact resistivities in the E-8 omega-sq cm range are obtained with both the Au-Ni and the Au-Ge-Ni systems, effectively eliminating the need for the presence of Ge in the Au-Ge-Ni system. The formation of various nickel phosphides at the metal-InP interface is shown to be responsible for the observed rho(sub c) values in the Ni and Au-Ni systems. We show, finally, that the order in which the constituents of Au-Ni and Au-Ge-Ni contacts are deposited has a significant bearing on the composition of the reaction products formed at the metal-InP interface and therefore on the contact resistivity at that interface.

Fatemi, Navid S.↗

NASA NTRS1968

Absorption spectrum of nickel in gallium phosphide.

Optical absorption spectra of Ni impurity in GaP due to d shell transitions, measuring crystal field parameters, noting fine structure

Allen, J. W.↗

NASA NTRS1969

Fundamental studies of the metallurgical, electrical, and optical properties of gallium phosphide Quarterly progress report, 1 Apr. - 30 Jun. 1969

Barrier diodes formed by nickel evaporation on undoped gallium phosphide by vertical liquid epitaxy

Pearson, G. L.↗

NASA NTRS1995

Sinterless Fabrication Of Contact Pads On InP Devices

Research has shown that with proper choice of material, low-resistance contact pads deposited on solar cells and other devices by improved technique that does not involve sintering. Research directed at understanding mechanisms involved in contact-sintering process has resulted in identification of special group of materials that includes phosphides of gold, silver, and nickel; specifically, Au(2)P(3), AgP(2), and Ni(3)P. Incorporation of phosphide interlayer substantially reduces resistivity between gold current-carrying layer and indium phosphide substrate. Further research indicated only very thin interlayer of any of these compounds needed to obtain low contact resistance, without subjecting contact to destructive sintering process.

Weizer, Victor G.↗

NASA NTRS1978

Lightweight porous plastic plaque

The porosity and platability of various materials were investigated to determine a suitable substrate for nickel-plated electrodes. Immersion, ultrasonics, and flow-through plating techniques were tried using nonproprietary formulations, and proprietary phosphide and boride baths. Modifications to the selected material include variations in formulation and treatment, carbon loading to increase conductivity, and the incorporation of a grid. Problems to be solved relate to determining conductivities and porosities as a function of amount of nickel plated on the plastics; loading; charge and discharge curves of electrodes at different current densities; cell performance; and long-term degradation of electrodes.

Reid, M.↗