Search NASA⌕ Search

SEARCH · Search NASA

Results for “node-line semimetals”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

Multiple Dirac nodes and symmetry protected Dirac nodal line in orthorhombic α-RhSi

Exotic multifold topological excitations have been predicted and were recently observed in transition metal silicides like β-RhSi. Herein, we report that interesting topological features of RhSi are also observed in its orthorhombic α phase, which displays multiple types of Dirac nodes very close to the Fermi level ε F . Here, we discuss the symmetry analysis, band connectivity along high-symmetry lines using group representations, band structure, the nature of the Dirac points and of a nodal line occurring near ε F which is protected by the crystalline symmetry. The de Haas–van Alphen effect indicates a Fermi surface in agreement with the calculations. We find an elliptically shaped nodal line very close to ε F around and near the S point on the k y -k z plane that results from the intersection of two upside-down Dirac cones. Both Dirac points of the participating Kramers degenerate bands are only 5 meV apart; hence, an accessible magnetic field might induce a crossing between the spin-up partner of the upper Dirac cone and the spin-down partner of the lower Dirac cone, possibly explaining the anomalies observed in the magnetic torque. α-RhSi is a unique system since all bands crossing ε F emerge from Dirac nodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Single-crystalline orthorhombic GdAlGe as a rare-earth magnetic Dirac nodal-line metal

Crystal engineering is a method for discovering new quantum materials and phases, which may be achieved using external pressure or strain. Chemical pressure is unique in that it generates internal pressure perpetually to the lattice. As an example, GdAlSi from the rare-earth (𝑅) 𝑅⁢Al⁢𝑋 (𝑋=Si or Ge) family of Weyl semimetals is considered. Replacing Si with the larger isovalent element Ge creates sufficiently large chemical pressure to induce a structural transition from the tetragonal structure of GdAlSi, compatible with a Weyl semimetallic state, to an orthorhombic phase in GdAlGe, resulting in an inversion-symmetry-protected nodal-line metal. We find that GdAlGe hosts an antiferromagnetic ground state with two successive orderings, at 𝑇 N ⁢1=35K and 𝑇 N ⁢2=30K. In-plane isothermal magnetization shows a magnetic field induced metamagnetic transition at 6.2 T for 2 K. Furthermore, electron-hole compensation gives rise to a large magnetoresistance of ∼100% at 2 K and 14 T. Angle-resolved photoemission spectroscopy measurements and density functional theory calculations reveal a Dirac-like linear band dispersion over an exceptionally large energy range of ∼1.5eV with a high Fermi velocity of ∼10 6 m/s, a rare feature not observed in any magnetic topological materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Signatures of van Hove singularities in the anisotropic in-plane optical conductivity of the topological semimetal Nb 3 ⁢SiTe 6

In this work, we present a temperature-dependent infrared spectroscopy study on the layered topological semimetal Nb 3 ⁢SiTe 6 combined with density-functional theory calculations of the electronic band structure and optical conductivity. Our results reveal an anisotropic behavior of the in-plane (ac-plane) optical conductivity, with three pronounced excitations located at around 0.15, 0.28, and 0.41 eV for the polarization of the incident radiation along the c axis. These excitations are well reproduced in the theoretical spectra. Based on the ab initio results, the excitations around 0.15 and 0.28 eV are interpreted as fingerprints of van Hove singularities in the electronic band structure and compared to the findings for other topological semimetals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evolution of magnetoresistance in the magnetic topological semimetals NdS⁢b 𝑥⁢ T⁢e 2−𝑥

Magnetic topological semimetals 𝐿𝑛⁢SbTe (𝐿𝑛=lanthanide elements) provide a platform to study the interplay of structure, magnetism, topology, and electron correlations. Varying Sb and Te compositions in 𝐿⁢𝑛⁢S⁢b 𝑥 ⁢T⁢e 2−𝑥 can effectively control the electronic, magnetic, and transport properties. Here, we report the evolution of transport properties with Sb and Te contents in NdS⁢b 𝑥 ⁢T⁢e 2−𝑥 , (0<𝑥<1). Our work reveals nonmonotonic evolution in magnetoresistance with varying composition stoichiometry. Specifically, reducing Sb content 𝑥 leads to strong negative magnetoresistance up to 99.9%. Such a strong magnetoresistance, which is likely attributed to the interplay between structure, magnetism, and electronic bands, establishes this material as a promising platform for investigating topological semimetal for future device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Photoinduced band renormalization effects in the topological nodal-line semimetal ZrSiS

Out-of-equilibrium effects provide an elegant pathway for probing and understanding the underlying physics of topological materials. In particular, controlling electronic band structure properties using ultrafast optical pulses has shown promise for creating exotic states of matter. Of recent interest is band renormalization in Dirac and Weyl semimetals as it leads to direct physical observables through the enhancement of the effective mass or in the shift of resonant energies. Here, in this work, we provide experimental and theoretical signatures of photoinduced renormalization of the electronic band structure in the topological nodal-line semimetal ZrSiS. Specifically, we show how the change in the transient reflectivity spectra under femtosecond optical excitations is induced by out-of-equilibrium effects that renormalize the kinetic energy of electrons. We associate the observed spectral features with an enhancement of the effective mass and to a redshift of the resonant frequency as a function of pump field strength. Finally, we show that the transient relaxation dynamics of the reflectivity is primarily an electronic effect with a negligible phononic contribution. Our study presents conclusive modifications of electronic properties in ZrSiS using ultrashort pulses and demonstrates the potential of this approach in creating photoinduced phases in topological quantum matter through an all-optical route.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

In-plane and out-of-plane optical response of the nodal-line semimetals ZrGeS and ZrGeSe

Polarization-dependent reflectivity measurements were carried out over a broad frequency range on single-crystalline ZrGeSe and ZrGeS compounds, which are closely related to the prototype nodal-line semimetal ZrSiS. These measurements revealed the strongly anisotropic character of both ZrGeSe and ZrGeS, with a reduced plasma frequency for the out-of-plane direction E∥c as compared with the in-plane direction E ∥ ab. For E ∥ ab, the optical conductivity spectrum consists of two Drude terms followed by a shoulder or plateaulike behavior and a distinct U shape at higher energies, while for E ∥ c, one Drude term is followed by a peaklike behavior, and the U shape of the profile is less developed. Under external pressure, two prominent excitations appear in the out-of-plane optical conductivity spectrum of ZrGeSe, whose frequency position and oscillator strength show a weak anomaly at ~3 GPa. Overall, the pressure-induced changes in the profile of the E∥c conductivity spectrum are much enhanced >~3 GPa. We compare our results to those recently reported for ZrSiS in a quantitative manner.

36 MATERIALS SCIENCE↗

Light-Induced Renormalization of the Dirac Quasiparticles in the Nodal-Line Semimetal ZrSiSe

In nodal-line semimetals, linearly dispersing states form Dirac loops in the reciprocal space with a high degree of electron-hole symmetry and a reduced density of states near the Fermi level. The result is reduced electronic screening and enhanced correlations between Dirac quasiparticles. In this study we investigate the electronic structure of ZrSiSe, by combining time- and angle-resolved photoelectron spectroscopy with ab initio density functional theory (DFT) complemented by an extended Hubbard model ( DFT + U + V ) and by time-dependent DFT + U + V . We show that electronic correlations are reduced on an ultrashort timescale by optical excitation of high-energy electrons-hole pairs, which transiently screen the Coulomb interaction. Our findings demonstrate an all-optical method for engineering the band structure of a quantum material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Unreliability of two-band model analysis of magnetoresistivities in unveiling temperature-driven Lifshitz transition

Recently, anomalies in the temperature dependences of the carrier density and/or mobility derived from analysis of the magnetoresistivities using the conventional two-band model have been used to unveil intriguing temperature-induced Lifshitz transitions in various materials. For instance, two temperature-driven Lifshitz transitions were inferred to exist in the Dirac nodal-line semimetal ZrSiSe, based on two-band model analysis of the Hall magnetoconductivities where the second band exhibits a change in the carrier type from holes to electrons when the temperature decreases below T=106K and a dip is observed in the mobility vs temperature curve at T=80K. Here, in this study, we revisit the experiments and two-band model analysis on ZrSiSe. We show that the anomalies in the second band may be spurious because the first band dominates the Hall magnetoconductivities at T>80K, making the carrier type and mobility obtained for the second band from the two-band model analysis unreliable. That is, care must be taken in interpreting these anomalies as evidence for temperature-driven Lifshitz transitions. Our skepticism on the existence of such phase transitions in ZrSiSe is further supported by the validation of Kohler's rule for magnetoresistances for T≤180K. In this paper, we showcase potential issues in interpreting anomalies in the temperature dependence of the carrier density and mobility derived from the analysis of magnetoconductivities or magnetoresistivities using the conventional two-band model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Geometric pumping and dephasing at topological phase transition

A measure-preserving formalism (MPF) is constructed and applied to spin/band models, which yield observations about pumping. It occurs at the topological phase transition, i.e., a Z 2 flip, suggesting that Z 2 can imply bulk effects. The model's asymptotic behavior is analytically solved via MPF. The pumping probability is geometric, fractional, and has a ceiling of $\frac{1}{2}$. Intriguingly, theorems are proved about occurrence conditions, which are linked to the system's dimension and the distinction between rational and irrational numbers. Finally, experimental detection is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Observation of gapless nodal-line states in NdSbTe

Lanthanide (Ln)-based systems in ZrSiS-type nodal-line semimetals have been subjects of research investigations as grounds for studying the interplay of topology with possible magnetic ordering and electronic correlations that may originate from the presence of Ln4f electrons. In this study, we carried out a thorough study of a LnSbTe system, NdSbTe, by using angle-resolved photoemission spectroscopy along with first-principles calculations and thermodynamic measurements. We experimentally detect the presence of multiple gapless nodal-line states, which is well supported by first-principles calculations. A dispersive and an almost nondispersive nodal line exist along the bulk X–R direction. Another nodal line is present well below the Fermi level across the Γ–M direction, which is formed by bands with high Fermi velocity that seem to be sensitive to light polarization. Finally, our study provides insight into the electronic structure of an alternative Ln⁢SbTe material system that will aid towards understanding the connection of Ln elements with topological electronic structures in these systems.

36 MATERIALS SCIENCE↗