Search NASA⌕ Search

SEARCH · Search NASA

Results for “noise diodes”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Excess noise in high-current diamond diodes

We report the results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by the 1/f and generation-recombination noise, which reveals itself as Lorentzian spectral features (f is the frequency). The generation-recombination bulges are characteristic of diamond diodes with lower turn-on voltages. The noise spectral density dependence on forward current, I, reveals three distinctive regions in all examined devices—it scales as I 2 at the low (I < 10 μA) and high (I > 10 mA) currents and, rather unusually, remains nearly constant at the intermediate current range. The characteristic trap time constants, extracted from the noise data, show a uniquely strong dependence on current. Interestingly, the performance of the diamond diodes improves with the increasing temperature. The obtained results are important for the development of noise spectroscopy-based approaches for device reliability assessment for high-power diamond electronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Low-frequency noise characteristics of GaN vertical PIN diodes—Effects of design, current, and temperature

We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current, and temperature. The as-grown and regrown diodes, with and without surface treatment, have been studied. The noise in most of the GaN devices had a characteristic 1/f spectrum at high and moderate currents, while some devices revealed generation-recombination bulges at low currents (f is the frequency). The predominant trend of the noise spectral density, S I , dependence on the current was S I ~ I. All tested GaN PIN diodes had rather low normalized noise spectral densities of 10 –18 –10 –16 cm 2 /Hz (f = 10 Hz) at the current density J = 1 A/cm 2 at room temperature. The noise temperature dependences at different currents revealed peaks at T = 375–400 K. Temperature, current, and frequency dependences of noise suggest that the noise mechanism is of the recombination origin. Here, we argue that the noise measurements at low currents can be used to efficiently assess the quality of GaN PIN diodes.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Low-frequency noise in β-(Al x Ga1 −x )2O3 Schottky barrier diodes

We report on the low-frequency electronic noise in β-(AlxGa1−x)2O3 Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectral density in such diodes was determined to be on the order of 10−12 cm2/Hz (f = 10 Hz) at 1 A/cm2 current density. At the intermediate current regime, we observed the random telegraph signal noise, correlated with the appearance of Lorentzian bulges in the noise spectrum. The random telegraph signal noise was attributed to the defects near the Schottky barrier. The defects can affect the local electric field and the potential barrier and, correspondingly, impact the electric current. The obtained results help in understanding the noise in Schottky barrier diodes made of ultra-wide bandgap semiconductors and can be used for the material and device quality assessment.

Physics↗
DOE OSTI2020

The Baryon Mapping Experiment (BMX), a 21cm intensity mapping pathfinder

The Baryon Mapping eXperiment (BMX) is an interferometric array designed as a pathfinder for a future post- reionization 21 cm intensity mapping survey. It consists of four 4-meter parabolic reflectors each having offset pyramidal horn feed, quad-ridge orthomode transducer, temperature-stabilized RF amplification and filtering, and pulsed noise injection diode. An undersampling readout scheme uses 8-bit digitizers running at 1.1 Gsamples/sec to provide access to signals from 1.1 - 1.55 GHz (third Nyquist zone), corresponding to HI emission from sources at redshift 0 < z < 0.3. An FX correlator is implemented in GPU and generates 28 GB/day of time-ordered visibility data. About 7,000 hours of data were collected from Jan. 2019 - May 2020, and we will present results on system performance including sensitivity, beam mapping studies, observations of bright celestial targets, and system electronics upgrades. BMX is a pathfinder for the proposed PUMA intensity mapping survey in the 2030s.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2021

Using Disorder to Overcome Disorder: A Mechanism for Frequency and Phase Synchronization of Diode Laser Arrays

Noise and disorder are known, in certain circumstances and for certain systems, to improve the level of coherence over that of the noise-free system. Examples include cases in which disorder enhances response to periodic signals, and those where it suppresses chaotic behavior. We report a new type of disorder-enhancing mechanism, observed in a model that describes the dynamics of external cavity-coupled semiconductor laser arrays, where disorder of one type mitigates (and overcomes) the desynchronization effects due to a different disorder source. Here, we demonstrate stabilization of dynamical states due to frequency locking and subsequently frequency locking-induced phase locking. Here, we have reduced the equations to a potential model that illustrates the mechanism behind the misalignment-induced frequency and phase synchronization.

42 ENGINEERING↗
DOE OSTI2023

Temperature Dependence of Low‐Frequency Noise Characteristics of NiO x /β‐Ga 2 O 3 p–n Heterojunction Diodes

Temperature dependence of the low-frequency electronic noise in NiO x /β-Ga 2 O 3 p–n heterojunction diodes is reported. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is the frequency). It is observed that there is an intriguing non-monotonic dependence of the noise on temperature near T = 380 K. The Raman spectroscopy of the device structure suggests material changes, which results in reduced noise above this temperature. The normalized noise spectral density in such diodes is determined to be on the order of 10 −14 cm 2 Hz −1 (f = 10 Hz) at 0.1 A cm −2 current density. In terms of the noise level, NiO x /β-Ga 2 O 3 p–n diodes perform excellently for new technology and occupy an intermediate position among devices of various designs implemented with different ultra-wide-bandgap semiconductors. The obtained results are important for understanding the electronic properties of NiO x /β-Ga 2 O 3 heterojunctions and contribute to the development of noise spectroscopy as the quality assessment tool for new electronic materials and device technologies.

1/f noise↗
DOE OSTI2020

Soft x-ray spectrum unfold of K-edge filtered x-ray diode arrays using cubic splines

Cubic spline interpolation is able to recover temporally and spectrally resolved soft x-ray flux from an array of K-edge filtered x-ray diodes without the need for a priori assumptions about the spectrum or the geometry of the emitting volume. The mathematics of the cubic spline interpolation is discussed in detail. The analytic nature of the cubic spline solution allows for analytical error propagation, and the method of calculating the error for radiation temperature, spectral power, and confidence intervals of the unfolded spectrally resolved flux is explained. An unfold of a blackbody model demonstrates the accuracy of the cubic spline unfold. Tests of cubic spline performance using spectrally convolved detailed atomic model simulation results have been performed to measure the method's ability to conserve spectral power to within a factor of 2 or better in line-dominated regimes. The unfold is also demonstrated to work when information from the x-ray diode array is limited due to high signal-to-noise ratios or lack of signal due to over-attenuation or over-filtration of the x-ray diode signal. Here, the robustness of the unfold with respect to background subtraction and raw signal processing, signal alignment between diode traces, limited signal information, and initial conditions is discussed. Results from an example analysis of a halfraum drive are presented to demonstrate the capabilities of the unfold in comparison with previously established methods.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

W-band system-on-chip electron cyclotron emission imaging system on DIII-D

Monolithic, millimeter wave “system-on-chip” (SoC) technology has been employed in heterodyne receiver integrated circuit radiometers in a newly developed Electron Cyclotron Emission Imaging (ECEI) system on the DIII-D tokamak for 2D electron temperature profile and fluctuation evolution diagnostics. Here, a prototype module operating in E-band (72-80 GHz) was first employed in a 2 x 10 element array that demonstrated significant improvements over the previous quasi-optical Schottky diode mixer arrays during the 2018 operational campaign of the DIII-D tokamak. For compatibility with International Thermonuclear Experimental Reactor (ITER) relevant scenarios on DIII-D, the SoC ECEI system was upgraded with 20 horn-waveguide receiver modules. Each individual module contains a University of California at Davis designed W-band (75 -110 GHz) receiver die that integrates a broadband low noise amplifier (LNA), a double balanced down-converting mixer, and a x4 multiplier on the local oscillator (LO) chain. A x2 multiplier and two IF amplifiers are packaged and selected to further boost the signal strength as well as downconvert the signal frequency. The upgraded W-band array exhibits > 30 dB additional gain and 20x improvement in noise temperature comparing with the previous Schottky diode radio frequency (RF) mixer input systems; an internal 8 times multiplier chain is used to bring down the LO frequency below 12 GHz, thereby obviating the need for a large aperture for quasi-optical LO coupling and replacing it with coaxial connectors. The horn-waveguide shielding housing avoids out-of-band noise interference on each individual module. The upgraded ECEI system plays an important role for absolute electron temperature evolution and fluctuation measurements for edge and core region transport physics studies.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

System-on-Chip approach microwave diagnostics development for burning plasma

System-on-chip (SoC) millimeter wave integrated circuit technology has been developed and employed in chip heterodyne radiometers in Electron Cyclotron Emission Imaging (ECEI) and Microwave Imaging Reflectometer (MIR) on the DIII-D tokamak for 2D electron temperature and density fluctuation diagnostics. The W-band (75-110 GHz) ECEI system has been employed with 20 poloidal horn receiver modules with customized monolithic integrated circuit chips and internal local oscillator coupling path. The new SoC approach demonstrates > 30 dB additional gain on the receiver and 95% electronics noise suppression compared to the previous Schottky diode mixer array . An F-band (110-140 GHz) receiver chip has been developed to measure MHD and turbulence behavior on the DIII-D high-field side, such as Alfven eigenmodes. Furthermore, it can image pedestal structure evolution on fusion facilities with stronger magnetic fields, such as ASDEX-U, EAST, HL-2M, and LHD. The F-band chip performance has been tested in the laboratory. Also, V-band (55-75 GHz) transmitter and receiver modules (55-75 GHz) have been developed for DIII-D and NSTX-U Furthermore, microwave Imaging Reflectometer (MIR) application suitability for 2D density fluctuation imaging on the pedestal region.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Compensation of Anisotropy in Spin Hall Devices for Neuromorphic Applications

Spintronic nano-oscillators and diodes with reduced nonlinearity benefit from low phase noise and improved device properties. Moreover, they could offer key advantages for realizing neuromorphic applications, such as spike-based neurons and frequency multiplexing in neural networks. Here, in this work, we experimentally demonstrate the reduction in nonlinearity of a spin Hall nano-oscillator (SHNO) by compensation of its effective magnetic anisotropy. The study involves optimization of Co/Ni multilayer growth to achieve the compensation, followed by spin-diode measurements on patterned microstrips to quantify their anisotropy. The relationship between the second- (H k 2 = 0.47 mT) and first-order ($H^{eff}_{k_1}$ = -0.8 mT) anisotropy fields reveals the existence of an easy cone, thereby validating the presence of compensation. Furthermore, we demonstrate a compensated spin diode that has a fixed frequency when the input power is varied. We then study the current-induced auto-oscillation properties of SHNOs on compensated films by patterning nanoconstrictions of 200 and 100 nm wide. The invariance of the resonance frequency and linewidth of the compensated SHNO with applied dc current indicates the absence of nonlinearity. This independence is maintained irrespective of the applied external fields and their orientations. The compensated SHNO obtained has a linewidth of 1.1 MHz and a peak output power of up to 1 pW/MHz.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Interferometric bunch length measurements of 3 MeV picocoulomb electron beams

We report picosecond bunch length measurements using an interferometric method for a 3 MeV electron beam having bunch charge ranging from 1 to 14 pC. The method senses the single-cycle sub-terahertz (THz) pulse emitted by each electron bunch as coherent transition radiation which, in turn, is analyzed using a Michelson-type interferometer, forming an interferogram that is then processed to yield the nominal electron bunch length. This sub-THz coherent radiation intensity was measured using a quasi-optical detector (QOD) operated at room temperature. This experiment was quite challenging since the divergence angle of the sub-THz pulse emitted by the low-energy electron bunch exceeds ±10°, and its pulse energy at the entrance to the detector was as low as 100 pJ. When compared to a conventional helium-cooled silicon composite bolometer designed for frequencies above 0.5 THz, the QOD provided much better signal-to-noise ratio in the ~80 GHz frequency range, which was critical for the successful measurement of the bunch length.

36 MATERIALS SCIENCE↗
DOE OSTI2024

UV hybrid photon detector based on GaN photocathodes and Si low gain avalanche diode

Photon detectors featuring single-photon sensitivity play a crucial role in various scientific domains, including high-energy physics, astronomy, and quantum optics. Fast response time, high quantum efficiency, and minimal dark counts are the characteristics that render them ideal candidates for detecting individual photons with exceptional signal-to-noise ratios, at frequencies in the range of hundreds of MHz. Here, in this study, we report on our first design and operational results on a Hybrid Photon Detector (HPD) that combines the high quantum efficiency of a Gallium Nitride (GaN) photocathode and the low noise characteristics of a Si-based Low-Gain Avalanche Diode (LGAD). This hybrid detection scheme has the potential to reach single-photon detection sensitivity with high quantum efficiency, low noise levels and capable of operating at hundreds of MHz repetition rates.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Imaging of multiple fluorescent proteins in canopies enables synthetic biology in plants

Reverse genetics approaches have revolutionized plant biology and agriculture. Phenomics has the prospect of bridging plant phenotypes with genes, including transgenes, to transform agricultural fields. Genetically encoded fluorescent proteins (FPs) have revolutionized plant biology paradigms in gene expression, protein trafficking and plant physiology. While the first instance of plant canopy imaging of green fluorescent protein (GFP) was performed over 25 years ago, modern phenomics has largely ignored fluorescence as a transgene expression device despite the burgeoning FP colour palette available to plant biologists. Here, we show a new platform for stand-off imaging of plant canopies expressing a wide variety of FP genes. The platform-the fluorescence-inducing laser projector (FILP)-uses an ultra-low-noise camera to image a scene illuminated by compact diode lasers of various colours, coupled with emission filters to resolve individual FPs, to phenotype transgenic plants expressing FP genes. Each of the 20 FPs screened in plants were imaged at >3 m using FILP in a laboratory-based laser range. We also show that pairs of co-expressed fluorescence proteins can be imaged in canopies. The FILP system enabled a rapid synthetic promoter screen: starting from 2000 synthetic promoters transfected into protoplasts to FILP-imaged agroinfiltrated Nicotiana benthamiana plants in a matter of weeks, which was useful to characterize a water stress-inducible synthetic promoter. FILP canopy imaging was also accomplished for stably transformed GFP potato and in a split-GFP assay, which illustrates the flexibility of the instrument for analysing fluorescence signals in plant canopies.

abiotic stress↗
DOE OSTI2024

Spectroscopic performance of Low-Gain Avalanche Diodes for different types of radiation

LGADs (Low-Gain Avalanche Diodes or Detectors) are a type of silicon Avalanche Photo-Diodes originally developed for the fast detection of minimum ionizing particles in high-energy physics experiments. Thanks to their fast timing performance, the LGAD paradigm enables detectors to accurately measure minimum ionizing particles with a timing resolution of a few tens of picoseconds. Such a performance is due to a thin substrate and the presence of a moderate signal gain. This internal gain of a few tens is enough to compensate for the reduced charge deposition in the thinner substrate and the noise of fast read-out systems. While LGADs are optimized for the detection of minimum ionizing particles for high-energy particle detectors, it is critical to study their performance for the detection of different types of particle, such as X-rays, gamma-rays, or alphas. In this paper, we evaluate the gain of three types of LGADs: two devices with different geometries and doping profiles fabricated by Brookhaven National Laboratory, and one fabricated by Hamamatsu Photonics with a different process. Since the gain in LGADs depends on the bias voltage applied to the sensor, pulse-height spectra have been acquired for bias voltages spanning from the depletion voltage up to the breakdown voltage. Finally, the signal-to-noise ratio of the generated signals and the shape of their spectra allow us to probe the underlying physics of the multiplication process.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Design optimization of semiconductor piezoresistors with Schottky diode contacts

A modeling theory is developed to predict the performance of piezoresistors which incorporate Schottky diode electrical contacts. This new theory allows the design of high performance gauges which can be fabricated using NonLithographically-Based Microfabrication (NLBM) techniques. These semiconductor piezoresistors can be designed in customizable sizes and fabricated in parallel in order to integrate position sensing into MEMS flexural positioners. Customizable nanopositioning platforms will enable advances in a range of nano-scale fabrication and metrology applications. A semiconductor piezoresistor with Schottky diode contacts was fabricated and attached to a titanium flexure. This device is shown to match predicted electrical performance within about 8% and to show a gauge factor of 116, within 2% of the predicted value. Performance limits for Schottky diode semiconductor piezoresistors are identified to be about 127dB full noise dynamic range for a quarter bridge over a 10kHz sensor bandwidth on a 600µm width titanium flexure, making them ideal for sensing on meso-/micro-scale flexural positioners. Methods of reaching these performance bound are suggested and their impact on the sensor dynamic range are studied.

42 ENGINEERING↗
DOE OSTI2025

High-Spectral Resolution Lidar (HSRL) Instrument Handbook

High-spectral-resolution lidar (HSRL) systems provide vertical profiles of optical depth, backscatter cross-section, depolarization, and backscatter phase function. All HSRL measurements are calibrated by reference to molecular scattering, which is measured at each point in the lidar profile. Like the Raman lidar (RL), but unlike simple backscatter lidars such as the micropulse lidar (MPL), this enables the HSRL to measure backscatter cross-sections and optical depths without prior assumptions about the scattering properties of the atmosphere. The depolarization observations allow robust discrimination between ice and water clouds. Rigorous error estimates can be computed for all measurements. A very narrow angular field of view reduces multiple scattering contributions. The small field of view, coupled with a narrow optical bandwidth, nearly eliminates noise due to scattered sunlight. The laser transmitter is a diode-pumped, frequency-doubled Nd:YAG laser. Narrow-band, single-frequency operation is provided by injection seeding with a single-frequency, cw-diode-pumped diode laser. The main laser cavity is maintained in resonance with the seed laser by adjusting the cavity length to minimize the time between the Q-switch trigger and the emission of the laser pulse. The emission wavelength is tuned via temperature control of the seed laser crystal and is locked to line #1109 of the iodine absorption spectra. Locking is accomplished by minimizing the transmission through a 2-cm-long iodine absorption cell. Use of a high-repetition-rate laser and expansion of the transmitted beam through a 400-mm telescope reduces the transmitted energy density to eye-safe levels. It is possible to look directly into the output beam without hazard. The receiver and transmitter use the same afocal telescope, simplifying the maintenance of stable alignment of the transmitter and receiver although the angular FOV is only 100 μrad. The small FOV and the 4-kHz repetition rate also limit the near-field signal strength, making it possible to record continuous profiles that start at an altitude of ~100 m and extend to 30 km using photon counting detectors. The small FOV also suppresses multiple scattering contributions.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2025

Performance of an X-γ ray detection system based on a thick silicon LGAD

We present the performance of a X-γ ray detection systems based on a 300 µm thick silicon low-gain avalanche diode (LGAD) and of an equivalent Diode structure without the gain layer, read-out by a custom-made low-noise charge amplifier. For the LGAD structure, the multiplication gains M s from 10.2 to 19.3 are measured, and the Equivalent Noise Charge (ENC) components have been studied in detail. As expected, a significant reduction of the white and 1/f voltage series and dielectric ENC components is observed with increasing gain, shortening the optimum peaking time to τ = 0.4÷8 μs depending on the gain value, with respect to the standard diode, while the parallel ENC component increases proportionally to the gain up to M s = 15. Setting the gain M s = 12.7, a minimum ENC = 34.5 electrons r.m.s. (298 eV FWHM) at τ = 1 μs is found. However, the electronic noise, evaluated on the pulser FWHM, is found to only marginally contribute to the width of the spectral lines of a radioactive source, which are dominated instead by the statistical noise of the charge multiplication within the LGAD structure. The spectral lines' excess width is found to be proportional to the signal multiplication gain M s and increases with the energy of the photons. A minimum line width of 850 eV FWHM at 13.9 keV is measured at room temperature, τ = 2 μs and a gain M s = 10.2.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

System-on-chip upgrade of millimeter-wave imaging diagnostics for fusion plasma

Monolithic, millimeter wave “system-on-chip” technology has been employed in chip heterodyne radiometers in a newly developed Electron Cyclotron Emission Imaging (ECEI) system on the DIII-D tokamak for 2D electron temperature and fluctuation diagnostics. The system employs 20 horn-waveguide receiver modules each with customized W-band (75–110 GHz) monolithic microwave integrated circuit chips comprising a W-band low noise amplifier, a balanced mixer, a ×2 local oscillator (LO) frequency doubler, and two intermediate frequency amplifier stages in each module. Compared to previous quasi-optical ECEI arrays with Schottky mixer diodes mounted on planar antennas, the upgraded W-band array exhibits >30 dB additional gain and 20× improvement in noise temperature; an internal eight times multiplier chain is used to provide LO coupling, thereby eliminating the need for quasi-optical coupling. The horn-waveguide shielding housing avoids out-of-band noise interference on each module. The upgraded ECEI system plays an important role for absolute electron temperature and fluctuation measurements for edge and core region transport physics studies. An F-band receiver chip (up to 140 GHz) is under development for additional fusion facilities with a higher toroidal magnetic field. Visualization diagnostics provide multi-scale and multi-dimensional data in plasma profile evolution. Finally, a significant aspect of imaging measurement is focusing on artificial intelligence for science applications.

47 OTHER INSTRUMENTATION↗