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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Charge-carrier mobilities in Cd(0.8)Zn(0.2)Te single crystals used as nuclear radiation detectors

Charge-carrier mobilities were measured for the first time in Cd(0.8)Zn(0.2)Te single crystals using time-of-flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency-doubled Nd:YAG laser (532 nm). The electron mobility displayed a T exp -1.1 dependence on the absolute temperature T in the range 200-320 K, with a room-temperature mobility of 1350 sq cm/V s. The hole mobility displayed a T exp -2.0 dependence in the same temperature range, with a room-temperature mobility of 120 sq cm/V s. Cd(0.8)Zn(0.2)Te appears to be a very favorable material for a room-temperature electronic nuclear radiation detector.

Burshtein, Z.↗
NASA NTRS1988

Growth of mercuric iodide (HgI2) for nuclear radiation detectors

Mercuric iodide is a material used for the fabrication of the sensing element in solid state X-ray and gamma ray detecting instruments. The operation of the devices is determined to a large degree by the density of structural defects in the single crystalline material used in the sensing element. Since there were strong indications that the quality of the material was degraded by the effects of gravity during the growth process, a research and engineering program was initiated to grow one or more crystals of mercuric iodide in the reduced gravity environment of space. A special furnace assembly was designed which could be accommodated in a Spacelab rack, and at the same time made it possible to use the same growth procedures and controls used when growing a crystal on the ground. The space crystal, after the flight, was subjected to the same evaluation methods used for earth-grown crystals, so that comparisons could be made.

Vandenberg, L.↗
NASA NTRS1980

Nuclear Science Symposium, 26th and Symposium on Nuclear Power Systems, 11th, San Francisco, Calif., October 17-19, 1979, Proceedings

The paper covers the studies presented on nuclear science and nuclear power systems symposiums. The studies deal with nuclear radiation detectors, nuclear circuits and systems, space and medical instrumentation, as well as with environmental and reactor instrumentation. Data preprocessing and acquisition are discussed. Emphasis is placed on the engineered safety features of nuclear systems.

Kerns, C. R.↗
NASA NTRS1972

A high resolution semiconductor detector for applications in space

Nuclear radiation detectors with volumes of approximately 1 cu cm was fabricated from single crystals of germanium-silicon alloy containing as much as 20 weight percent germanium. The properties of these detectors were investigated and will be discussed. Tests reveal that the gamma ray photoelectric peak efficiency of an alloy detector with only 12 weight percent germanium is approximately 4 times that of a silicon detector of equal volume. The room temperature roomure appears to be a good possibility. Storage for long periods at room temperature does not seem to adversely affect these devices. The results of preliminary radiation damage experiments suggest that the alloy detectors possess a radiation damage resistance far greater than that of silicon.

Alexander, P.↗
DOE OSTI2021

Characterization of CdZnTeSe Nuclear Detector Chemically Etched in Bromine Methanol

Semiconductor nuclear radiation detectors made from tertiary and quaternary compounds of cadmium telluride (CdTe) can operate at room temperature without cryogenic cooling. One of such materials that have become of great interest is cadmium zinc telluride selenide (CdZnTeSe). Compared to other CdTe-based materials, such as cadmium zinc telluride (CdZnTe), CdZnTeSe can be grown with much less Te inclusions and sub-grain boundary networks. Chemical etching is often used to smoothen wafer surfaces during detector fabrication. This paper presents the characterization of CdZnTeSe that is chemically etched using bromine methanol solution. Infrared imaging shows that the wafer has no sub-grain boundary networks that often limit detector performance. The current-voltage (I-V) characterization experiment gave a resistivity of 4.6 × 10 10 Ω-cm for the sample. The I-V curve was linear in the ±10 to ±50 volts range. An energy resolution of 7.2% was recorded at 100 V for the 59.6-keV gamma line of 241 Am.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1998

Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

Hayes, M.↗
NASA NTRS1987

1986 Nuclear Science Symposium, 33rd, and 1986 Symposium on Nuclear Power Systems, 18th, Washington, DC, Oct. 29-31, 1986, Proceedings

Papers are presented on space, low-energy physics, and general nuclear science instrumentations. Topics discussed include data acquisition systems and circuits, nuclear medicine imaging and tomography, and nuclear radiation detectors. Consideration is given to high-energy physics instrumentation, reactor systems and safeguards, health physics instrumentation, and nuclear power systems.

Stubblefield, F. W.↗
DOE OSTI2021

Lithium indium diselenide — An advanced material for neutron detection

Here, this paper describes the synthesis, crystal growth, detector fabrication, radiation hardening studies, MCNP modeling, and characterization of lithium indium diselenide or LiInSe 2 . This newly-developed room temperature thermal neutron detector has semiconducting and scintillating properties and it is suitable for neutron detection application. LiInSe 2 was synthesized starting from elemental Li, In, Se in two steps due to high reactivity of Li. A single crystal of LiInSe 2 was grown using the Vertical Bridgman method. The room temperature band gap was found to be 2.8 eV using optical absorption measurements. Bulk resistivity was measured at ∼5 × 10 11 Ωcm. Photoconductivity measurements of LiInSe 2 wafers identified a peak in the photocurrent around 445 nm. Nuclear radiation detectors were fabricated from single crystal wafer and the responses to alpha particles at various biases were measured. The mobility-lifetime product was estimated. Gamma irradiation studies were performed with calculated absorbed doses ranging from 0.2126 to 21,262 Gy. The characterization of the two wafers for their scintillator performance was conducted after each irradiation. The gamma irradiation produced a reduction of the light yield that translated to a lower channel number for the centroid of alpha detection spectra. It also showed a considerable reduction of the decay time after the first irradiation. These are the first studies on gamma radiation hardening with this material.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1985

Hgi2 Sub 2 Crystal Growth for Nuclear Detectors

The objectives of this program are to obtain a benchmark quality sample grown at low-g conditions and to study vapor growth phenomena under space conditions. Ground-based crystals show a defect structure which impairs their performance as nuclear radiation detectors. These defects may be caused by the gravitational force acting on the crystal in its weakended state at the elevated growth temperature and by irregular convection patterns in the vapor during growth. Mechanical strength measurements have been performed (uniaxial compression tests) which show that the crystals exhibit slip parallel to the c-planes at stresses as low as 1/2 psi. Preliminary calculations using a simple linearized model indicate the oscillating instabilities in the convection part of the vapor transport system are unlikely, even at 1-g, provided that the utmost care is taken in the preparation of the crystal growth source material.

Schnepple, W. F.↗
DOE OSTI2022

Effects of Selenium Doping in Zinc Telluride from First Principles

We report point defects and compensation in zinc telluride have been subjects of study for several decades due to the compound’s scientific/technological applications. Despite this, there remains some disagreement in the literature as to the fine details of its defect chemistry. Recently, it has also come under renewed interest due to the emerging Cd( 1–x )Zn x Te( 1–y )Se y material family, used in nuclear radiation detector applications. In this article, we use state-of-the-art computational tools to re-examine the native defect chemistry of ZnTe and explore how it changes upon addition of selenium using density functional theory with screened hybrid exchange–correlation functionals, thermochemical models of the equilibration environment, and statistical mechanics models of the point defect ensemble.

II-VI semiconductors↗
DOE OSTI2021

Growth of Cd 0.9 Zn 0.1 Te 1-y Se y Single Crystals for Room Temperature Gamma-Ray Detection

Quaternary Cd 0.9 Zn 0.1 Te 1-y Sey (CZTS) single crystals, a novel room-temperature nuclear radiation detector semiconductor material, have been grown using a modified vertical Bridgman method (VBM) and a travelling heater method (THM). The percentage concentration of selenium in the VBM-grown crystal was 3% and that in the THM-grown crystal was 2%. While the THM Frisch collar detector (4.4 × 4.4 × 10.7 mm 3 ) produced a highly resolved pulse height spectra (PHS) with a resolution of ~1.06% for 662-keV gamma rays without any correction, the VBM-grown detector (10 × 10 × 2 mm 3 ) offered a high energy resolution of ~2% after application of a digital biparametric correction. The high-resolution performance of these detectors has been attributed to the addition of Se in the Cd 0.9 Zn 0.1 Te (CZT) matrix. Ab-initio calculations based on density functional theory (DFT) also confirmed that the addition of Se in the CZT matrix helps to reduce the formation of TeCd and the TeZn anti-sites. The VBM-grown crystals were characterized using powder x-ray diffraction (XRD) and energy dispersive x-ray spectroscopy (EDS). While XRD results revealed sharp diffraction peaks confirming the crystalline nature of the grown crystal, the EDS results confirmed the targeted stoichiometry of the elemental composition. The bulk resistivity of the grown crystal was calculated to be ~3 × 10 10 Ω-cm from current-voltage characteristics recorded at room temperature in a planar configuration, ensuring that the grown CZTS crystals have low dark current as required for detector-grade crystals.

42 ENGINEERING↗
NASA NTRS1972

Methods of measurement for semiconductor materials, process control, and devices

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.

Bullis, W. M.↗
NASA NTRS1975

Nuclear Science Symposium, 21st, Scintillation and Semiconductor Counter Symposium, 14th, and Nuclear Power Systems Symposium, 6th, Washington, D.C., December 11-13, 1974, Proceedings

Papers are presented dealing with latest advances in the design of scintillation counters, semiconductor radiation detectors, gas and position sensitive radiation detectors, and the application of these detectors in biomedicine, satellite instrumentation, and environmental and reactor instrumentation. Some of the topics covered include entopistic scintillators, neutron spectrometry by diamond detector for nuclear radiation, the spherical drift chamber for X-ray imaging applications, CdTe detectors in radioimmunoassay analysis, CAMAC and NIM systems in the space program, a closed loop threshold calibrator for pulse height discriminators, an oriented graphite X-ray diffraction telescope, design of a continuous digital-output environmental radon monitor, and the optimization of nanosecond fission ion chambers for reactor physics. Individual items are announced in this issue.

Source record↗