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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Systems and methods for quantum optical device authentication

Quantum optical device authentication technologies are described herein. A first device includes an optical transmitter transmits a plurality of pulses to an optical receiver included on a second device. The optical pulses each have one of two non-orthogonal optical states. The optical receiver measures each of the pulses and the second device records a measured value of the optical state of each pulse. Subsequently, the second device transmits the measured values of the optical states of the pulses to the first device. The first device outputs an indication of whether the second device is authenticated based upon the measured values received from the second device and the optical states of the pulses transmitted by the optical transmitter.

Soh, Daniel Beom Soo↗

Reprogrammable electro-chemo-optical devices and methods for using the same

Reconfigurable, active optical components can flexibly manipulate light. One example of these components is an electro-chemo-optical device that utilizes a metal oxide film with a complex refractive index that varies as a function of an oxygen vacancy concentration. The optical device may include a metal oxide film, a first electrode, and a second electrode. The first electrode and the second electrode may be used to supply a bias voltage to induce a change in the oxygen vacancy concentration in order to change the optical properties (absorbance, transmittance, and/or reflectance) of the optical device. The magnitude and spatial distribution of the oxygen vacancy concentration may be altered to affect the optical properties of the optical device. In some designs, the optical device may also include an ionic conductor and oxygen source to supply/receive oxygen ions to/from the metal oxide film.

Kalaev, Dmitri↗

Wide bandgap optical switch circuit breaker for controlling propagation of current therethrough a wide bandgap optical device

A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideband optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.

Voss, Lars F.↗

Optical device having a light-emitting structure and a waveguide integrated capacitor to monitor light

Examples described herein relate to an optical device with an integrated light-emitting structure to generate light and a waveguide integrated capacitor to monitor light. The light-emitting structure may emit light upon the application of electricity to the optical device. The waveguide integrated capacitor may be formed under the light-emitting structure to monitor the light emitted by the light-emitting structure. The waveguide integrated capacitor includes a waveguide region carrying at least a portion of the light. The waveguide region includes one or more photon absorption sites causing the generation of free charge carriers relative to an intensity of the light confined in the waveguide region resulting in a change in the conductance of the waveguide region.

Srinivasan, Sudharsanan↗

High-Transmission Neutron Optical Devices Utilizing Micro-Machined Structures

Neutrons are a powerful probe in material science with unique penetrating abilities. A major challenge stems from the fact that neutron optical devices are limited to refractive indices on the order of n≈1±10−5. By exploiting advances in precision manufacturing, we designed and constructed micro-meter period triangular grating with a high-aspect ratio of 14.3. The manufacturing quality is demonstrated with white-light interferometric data and microscope imaging. Neutron-scattering experiment results are presented, showing agreement with refraction modelling. The capabilities of neutron Fresnel prisms and lenses based on this design are contrasted with existing neutron focusing techniques, and the path separation of a prism-based neutron interferometer is estimated.

Kapahi, Connor (ORCID:0000000160516859)↗

Optical device for in-line and real-time monitoring of microorganisms

A multi-wavelength laser diode based optical sensor system capable of monitoring the dynamics and physiological changes of a microorganism culture in real-time. The microorganism culture from a microorganism production chamber is pumped to a flow chamber. Laser diodes emit light at certain wavelengths through the flow chamber, which is sensed by photodiodes. A laser control circuitry is operatively connected to the laser diodes and a signal conditioning circuitry is operatively connected to the photodiodes. A microprocessor reads and records voltage signals corresponding to the wavelengths. A data acquisition system converts said voltage signals into measurements of biological parameters, which are displayed on a graphical user interface and allow a user to monitor the measurements in real time.

47 OTHER INSTRUMENTATION↗

Transparency and color tunable electro-optical device using colloidal core/shell nanoparticles

According to one embodiment, a product is a mixture including a solvent and generally spherical colloidal nanoparticles, the colloidal nanoparticles each having a core and a shell surrounding the core, and an electrode. In addition, the mixture is characterized as having a transparency to light in a predetermined wavelength range, where the transparency increases as a voltage of the electrode increases.

42 ENGINEERING↗

Conductive heat spreader and heat sink assembly for optical devices

Matching of coefficient of thermal expansion for heat spreaders and carrier die can facilitate optoelectronic die alignment. In one example, an apparatus comprises a carrier die comprising a first coefficient of thermal expansion, two or more optoelectronic die disposed on the carrier die, and a spreader. The spreader can comprise a second material coefficient of thermal expansion matched to the first coefficient of thermal expansion. Additionally, a thermal interface material is disposed between the spreader and the one or more optoelectronic die.

Doany, Fuad Elias↗

Optical devices enabled by vertical dielectric Mie resonators

Dielectric resonators provide a building block for the development of low-loss resonant metamaterials because they replace lossy ohmic currents of metallic resonators with low-loss displacement currents. The spectral locations of electric and magnetic dipole resonances of a dielectric resonator can be tuned by varying the resonator geometry so that desired scattering properties are achieved.

Campione, Salvatore↗

Efficient ultrathin all-dielectric nonlinear optical device

An apparatus and method are provided for generating harmonic light from a pump beam that is impinged on a metasurface comprising a plurality of all-dielectric resonator bodies. A multiple quantum well structure formed in each resonator body includes asymmetric coupled quantum wells having intersubband transition frequencies that couple to Mie resonances of the resonator bodies.

Sarma, Raktim↗

Multi-objective, robust constraints enforced global topology optimizer for optical devices

A method for optimization of photonic devices is disclosed. The method includes receiving a set of unconstrained latent variables; mapping the set of unconstrained latent variables to a constrained space to generate a constrained device; calculating the permittivity across each element of the constrained device; determining a permittivity-constrained width gradient based at least partially on the permittivity across each element; and optimizing the set of unconstrained latent variables by at least partially using the permittivity-constrained width gradient.

Fan, Jonathan↗

Optical systems fabricated by printing-based assembly

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Rogers, John↗

Dynamic Atomistic Polar Structure Underpins Ultrahigh Linear Electro-Optic Coefficient in Transparent Ferroelectric Ceramics

Transparent ferroelectrics with high linear electro-optic (EO) coefficients are critical for advanced electro-optical devices. However, achieving optical transparency in ferroelectric ceramics remains challenging due to visible light scattering caused by defects such as domain walls, grain boundaries, and pores. Here, we report the successful fabrication of transparent ferroelectric ceramics through innovative chemical composition design and an advanced two-step sintering process in the La-doped Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 system. The optical transparency, which is near the theoretical upper limit, can be attributed to the wide band gap and the minimization of light scattering of defects. By minimizing porosity and engineering grain/domain sizes to differ significantly from the wavelengths of visible light, we suppress scattering, achieving optical transparency near the theoretical upper limit. Strikingly, these ceramics exhibit an ultrahigh linear EO coefficient of ∼1417 pm/V, over 65 times greater than that of LiNbO 3 single crystals, the current industry standard. We attribute this exceptional performance to dynamic atomistic polar structures within switchable, thermally stable domains, which enhance electronic polarization sensitivity. This mechanism is corroborated by dielectric spectroscopy, high-resolution transmission electron microscopy and simulation. Our findings offer insights into the design of cost-effective transparent materials with exceptional EO properties, paving the way for next-generation electro-optical devices.

36 MATERIALS SCIENCE↗

Scalable Nanoimprint Manufacturing of Functional Multilayer Metasurface Devices

Optical metasurfaces, consisting of subwavelength-scale meta-atom arrays, hold great promise of overcoming the fundamental limitations of conventional optics. Due to their structural complexity, metasurfaces usually require high-resolution yet slow and expensive fabrication processes. Here, using a metasurface polarimetric imaging device as an example, the photonic structures and the Nanoimprint lithography (NIL) processes are designed, creating two separate NIL molds over a patterning area of > 20 mm2 with designed Moiré alignment markers by electron-beam writing, and further subsequently integrate silicon and aluminum metasurface structures on a chip. Uniquely, the silicon and aluminum metasurfaces are fabricated by using the nanolithography and 3D pattern-transfer capabilities of NIL, respectively, achieving nanometer-scale linewidth uniformity, sub-200 nm translational overlay accuracy, and <0.017 rotational alignment error while significantly reducing fabrication complexity and surface roughness. Here, the micro-sized multilayer metasurfaces have high circular polarization extinction ratios as large as ≈20 and ≈80 in blue and red wavelengths. Further, the metasurface chip-integrated CMOS imager demonstrates high accuracy in broad-band, full Stokes parameter analysis in the visible wavelength ranges and single-shot polarimetric imaging. This novel, NIL-based, multilayered nanomanufacturing approach is applicable to the scalable production of large-area functional structures for ultra-compact optic, electronic, and quantum devices.

36 MATERIALS SCIENCE↗

Toroidal multipass absorption device

A toroidal optical device can include a ring mirror defining a toroidal optical cavity symmetric about an axis and an optical coupler situated inside the toroidal optical cavity. The optical coupler can be situated to direct an input light first received from outside the toroidal optical cavity propagating inside the toroidal optical cavity, to multiply reflect from the ring mirror inside the toroidal optical cavity. A method includes producing one or more additional ring mirrors defining a toroidal optical cavity symmetric about a sagittal axis using a first ring mirror as a master form, and affixing an optical coupler inside the optical cavity to at least one of the one or more additional ring mirrors.

Bernacki, Bruce E.↗

Hybrid phonon-enhanced optical absorbers and emitters

A semiconductor optical device is comprised of a phonon donating material structurally connected to an indirect bandgap material to improve absorption and emission of light in the indirect bandgap material. An excitation energy source provides excitation radiation to the semiconductor optical device to excite electrons in the semiconductor optical device. Phonons from the phonon donating material present in the indirect bandgap material provide a mechanism for increased rates of electron-hole generation and recombination, and electrical leads provide an electrical connection to the semiconductor optical device.

Husko, Chad↗