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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

Ubiquitous Low-FeO Relict Grains in Type II Chondrules and Limited Overgrowths on Phenocrysts Following the Final Melting Event

Type II porphyritic chondrules commonly contain several large (>40 microns) olivine phenocrysts; furnace-based cooling rates based on the assumption that these phenocrysts grew in a single-stage melting-cooling event yield chondrule cooling-rate estimates of 0.01-1 K/s. Because other evidence indicates much higher cooling rates, we examined type 11 chondrules in the CO3.0 chondrites that have experienced only minimal parent-body alteration. We discovered three kinds of evidence indicating that only minor (4-10 microns) olivine growth occurred after the final melting event: (1) Nearly all (>90%) type II chondrules in CO3.0 chondrites contain low-FeO relict grains; overgrowths on these relicts are narrow, in the range of 2-12 microns. (2) Most type II chondrules contain some FeO-rich olivine grains with decurved surfaces and acute angles between faces indicating that the grains are fragments from an earlier generation of chondrules; the limited overgrowth thicknesses following the last melting event are too thin to disguise the shard-like nature of these grains. (3) Most type II chondrules contain many small (<20 microns) euhedral or subhedral phenocrysts with central compositions that are much more ferroan than the centers of the large phenocrysts; their small sizes document the small amount of growth that occurred after the final melting event. If overgrowth thicknesses were small (4-10 microns) after the final melting event, it follows that large fractions of coarse (>40 microns) high-FeO phenocrysts are relicts from earlier generations of chondrules, and that cooling rates after the last melting event were much more rapid than indicated by models based on a single melting event. These observations are thus inconsistent with the "classic" igneous model of formation of type II porphyritic chondrules by near-total melting of a precursor mix followed by olivine nucleation on a very limited number of nuclei (say, <10) and by growth to produce the large phenocrysts during a period of monotonic (and roughly linear) cooling. Our observations that recycled chondrule materials constitute a large component of the phenocrysts of type II chondrules also imply that this kind of chondrule formed relatively late during the chondrule-forming period.

Wasson, John T.↗
NASA NTRS2003

High Cooling Rates of Type-II Chondrules: Limited Overgrowths on Phenocrysts Following the Final Melting Event

In a study of type-II chondrules in Y81020 Wasson and Rubin (2003) described three kinds of evidence indicating that only minor (4-10 m) olivine growth occurred following the final melting event: 1) Nearly all (>90%) type-II chondrules in CO3.0 chondrites contain low-FeO relict grains; overgrowths on these relicts are narrow, in the range of 2-12 m. 2) Most type-II chondrules contain small (10-20 m) FeO-rich olivine grains with decurved surfaces and acute angles between faces indicating that the grains are fragments from an earlier generation of chondrules; the limited overgrowth thicknesses following the last melting event are too thin to disguise the shard-like nature of these small grains. 3) Most type-II chondrules contain many small (<20 m) euhedral or subhedral phenocrysts with central compositions that are much more ferroan than the centers of the large phenocrysts; their small sizes document the small amount of growth that occurred following the final melting event.We have additional data on chondrules in Y81020 and Semarkona, and we have reinterpreted observations of Jones (1990). The striking feature of this chondrule is the large number of tiny fragments. The chondrule precursor initially consisted of crushed olivine.

Wasson, John T.↗
DOE OSTI2020

Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth

Group IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. The future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV – ) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV – centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.

36 MATERIALS SCIENCE↗
NASA NTRS1986

Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask

A method for growing a high purity, low defect layer of semiconductor is described. This method involves depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities. The process can be iterated and the mask translated to further improve the quality of grown layers.

Morrison, Andrew D.↗
DOE OSTI2021

Symmetry in Seeded Metal Nanocrystal Growth

Symmetry underpins the structure and function of the world around us and is also captured in modern nanomaterials, where changing the symmetry of a nanocrystal or the interparticle spacing and orientation of nanocrystal building blocks in a superlattice can give new function. However, the synthesis and assembly of nanocrystals have been limited largely to simple compositions and structures. It remains a grand challenge to achieve nanocrystals with compositional and structural complexity while maintaining the monodispersity required for their use. This Account will illustrate through recent examples that seeded methods enable the synthesis of compositionally and structurally complex multimetallic crystals with defined and predictable symmetries for applications in plasmonics and catalysis. This outcome arises because the barrier for heterogeneous nucleation (i.e., seeded) is lower than that of homogeneous nucleation, where seeds can serve as preferential sites for the growth of complex structures and crystal phases. Our analysis begins by considering metal overgrowth from single-crystalline seeds of different shapes and symmetries, where the kinetics of adatom addition to seeds relative to their diffusion across seeds accounts for the expressed nanocrystal shapes. These results are then compared to overgrowth from seeds with different internal structures (i.e., planar defects), where the relationships between nanocrystal size and volumetric strain energy and surface energy are discussed. A major finding from this analysis is that often the underlying symmetry of seeds can be predictably transferred to the final crystals during overgrowth processes. Consequences of this finding are the predictable syntheses of crystals with different hierarchies akin to snowcrystals as well as nanocrystals with complex compositions (e.g., quaternary nanoparticles). Yet, there are subtle aspects to seeded growth that pave a path toward examples where nanocrystal symmetry has been reduced compared to the original seeds in a controlled manner. As we found, both the concentrations of metal precursors and capping agents can impact whether symmetry is transferred or reduced during overgrowth. Examples from our laboratory will be placed in context to other reported strategies for symmetry breaking. As will be argued, understanding what conditions favor symmetry preservation versus symmetry reduction during seeded crystal growth is central to accessing next-generation crystal forms. The Account concludes by outlining synthetic challenges associated with forming nanoscale heterostructures with precise 3-D placement of different materials within a given nanocrystal as well as facet control within different material domain and interface engineering. Furthermore, we envision meeting these challenges through regioselective and chemoselective seeded syntheses for which a foundation is outlined herein.

36 MATERIALS SCIENCE↗
NASA NTRS2022

A Record of Low-Temperature Asteroidal Processes of Amoeboid Olivine Aggregates from the Kainsaz Co3.2 Chondrite

Amoeboid olivine aggregates (AOAs) from the Kainsaz CO3.2 chondrite were analyzed using transmission electron microscopy in order to gain a more complete understanding of thermal metamorphism on the parent body and the role of fluids during metamorphic heating. The Kainsaz AOAs are dominated by strongly zoned, fine-grained, olivine grains (Fa2-31) with heterogeneous Fe enrichments along the grain boundaries, which are interpreted as the result of 26Fe2+-Mg2+ interdiffusion with the matrix during thermal metamorphism. However, our diffusion calculations show that such AOA olivine zoning and compositions cannot be produced by a simple diffusional exchange during metamorphic heating, unlike chondrule olivine zoning and compositions. In addition, fine-grained ferroan olivine overgrowths occur heterogeneously in crystallographic continuity with olivines on the AOA exteriors. The overgrowths (Fa33-36) are compositionally distinct from the underlying AOA olivines and are not fully equilibrated with the matrix olivines (Fa~20-55).The ferroan olivine overgrowths likely formed by precipitation from fluids in an epitaxial relationship with forsteritic olivine on the edges of AOAs. Texturally and compositionally diverse chromite grains are also observed along olivine grain boundaries, in olivine grains, and in pore spaces between olivine grains. They share a similar crystallographic orientation relationships with adjacent olivine, suggestive of their formation by exsolution and/or epitaxial growth. Collectively, these observations provide evidence for the mobilization of Fe, Mg, Si, Cr, and Al in the presence of fluids along olivine grain boundaries and into olivine grains during thermal metamorphism. We conclude that in Kainsaz AOAs, the strong zonation development in individual olivine grains and the formation of ferroan olivine overgrowths and chromite grains were a fluid-driven process that occurred at relatively low temperatures (<500°C), during the cooling history of the CO3 chondrite parent body, following the peak of thermal metamorphism.

Amoeboid olivine aggregates↗
NASA NTRS1982

Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

Gale, R. P.↗
NASA NTRS2004

Relict Forsterite in Chondrules: Implications for Cooling Rates

Forsterite (Fo(sub 99-100)) is often present in chondrules as relict grains that did not crystallize in situ and as isolated grains outside of chondrules; both are surrounded by ferrous overgrowths which clearly formed at a later time, probably during chondrule formation. We performed microprobe analyses across forsterite-overgrowth interfaces in 12 chondrules and 4 isolated grains in the Sahara-97210 LL3.2 (Sahara), Wells LL3.3, and Chainpur LL3.4 chondrites and modelled diffusional exchange between forsterite and overgrowths, with the goal of constraining the thermal histories during chondrule formation. The cooling rates experienced by chondrules provide an important constraint on the origin and setting of these objects.

Greeney, S.↗
DOE OSTI2021

On the Origin of Sinter‐Resistance and Catalyst Accessibility in Raspberry‐Colloid‐Templated Catalyst Design

Abstract Nanoparticle (NP) sintering is a major cause of the deactivation of supported catalysts. Raspberry‐colloid‐templated (RCT) catalysts are an emerging class of materials that show an unprecedented level of sinter‐resistance and exhibit high catalytic activity. Here a comprehensive study of the origin of NP stability and accessibility in RCT catalysts using theoretical modeling, 3D electron microscopy, and epitaxial overgrowth is reported. The approach is showcased for silica‐based RCT catalysts containing dilute Pd‐in‐Au NPs previously used in hydrogenation and oxidation catalysis. Modeling of the contact line of the silica precursor infiltrating into the assembled raspberry colloids suggests that a large part of the particles must be embedded into silica, which is confirmed by quantitative visualization of >200 individual NPs by dual‐axis electron tomography. The RCT catalysts have a unique structure in which all NPs reside at the pore wall but have >50% of their surface embedded in the matrix, giving rise to the strongly enhanced thermal and mechanical stability. Importantly, epitaxial overgrowth of Ag on the supported NPs reveals that not only the NP surface exposed to the pore but the embedded interface as well remained chemically accessible. This mechanistic understanding provides valuable guidance in the design of stable catalytic materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Design of Planarizing Growth Conditions on Unpolished and Faceted (100)-Oriented GaAs Substrates Using Hydride Vapor Phase Epitaxy

Here we performed a design of experiments (DoE) analysis to determine the effect of various growth parameters on in situ planarizing overgrowth of rough substrates using hydride vapor phase epitaxy (HVPE). We used two types of rough (100)-oriented GaAs substrates to compare the effect of the initial morphology on the epitaxial growth behavior: an irregular, as-cut surface resultant from cutting the wafer from a GaAs boule and a regularly faceted surface produced by controlled spalling. The DoE analysis identified trends in the overgrowth behavior with changing growth conditions, and we used these trends to design favorable planarization growth conditions for each surface type. These favorable conditions enabled full planarization of a spalled surface with >2.5 um facet height within 10.8 min of growth. The root mean squared (RMS) surface roughness of the resulting (100) surface was 24.5 nm over a 286 um x 215 um area. Our results show that planarization growth by HVPE is a promising technique to enable device growth directly on rough substrates, and the trends revealed through DoE analysis indicate a path toward further optimization of planarization growth conditions for as-cut and spalled surfaces.

14 SOLAR ENERGY↗
DOE OSTI2023

Nucleation Selectivity and Lateral Coalescence of GaAs over Graphene on Ge(111)

Here we use epitaxial lateral overgrowth (ELO) to produce semimetallic graphene nanostructures embedded in a semiconducting GaAs matrix for potential applications in plasmonics, THz generation and detection, and tunnel junctions in multijunction solar cells. We show that (1) the combination of low sticking coefficient and fast surface diffusion on graphene enhances nucleation selectivity at exposed regions of the substrate and (2) high growth temperatures favor efficient lateral overgrowth, coalescence, and planarization of epitaxial GaAs films over the graphene nanostructures. Our work provides a more complete understanding of ELO using graphene masks, as opposed to more conventional dielectric masks, and enables new types of metal/semiconductor nanocomposites.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Development of High-Efficiency GaAs Solar Cells Grown on Nanopatterned GaAs Substrates

One approach to reducing the cost of high-efficiency III–V devices involves adding patterned layers to heteroepitaxial or homoepitaxial substrates to facilitate substrate removal and reuse. However, few studies have focused explicitly on high-quality devices grown over patterned substrates, which is required for any cost saving to be beneficial. In this work, we demonstrate the growth of high-efficiency GaAs solar cells on GaAs substrates patterned with an array of nanoscale SiOX mask stripes. We show that reducing the pattern dimensions to submicron length scales with nanoimprint lithography enables defect-free coalescence. By varying the growth conditions, faceting of the epilayer material during overgrowth of the patterned mask was also controlled. A V/III ratio of 200 during MOVPE overgrowth produced smooth coalesced epilayers, which is desirable for the growth of subsequent device layers. Inverted GaAs front homojunction devices grown on patterned GaAs(001) substrates achieved threading dislocation densities below 5 × 10 5 cm –2 and maintained >23% solar cell efficiencies at one sun illumination, equivalent to control devices grown on unpatterned epi-ready substrates.

14 SOLAR ENERGY↗
DOE OSTI2020

Activated KCNQ1 channel promotes fibrogenic response in hereditary gingival fibromatosis via clustering and activation of Ras

Abstract Background and Objective Activated potassium channels were found to be strongly correlated with gingival overgrowth (GO) phenotype as we reviewed syndromic hereditary gingival fibromatosis (HGF). Nevertheless, the functional roles of potassium channels in gingival fibrosis or gingival overgrowth remained uncovered. The aim of the present study was to explore the pathogenic role of aberrantly activated potassium channel in Hereditary Gingival Fibromatosis (HGF). Methods Gingival tissues were collected from 9 HGF patients and 15 normal controls. Expression of KCNQ1 was detected by immunohistochemistry. Gingival fibroblasts were isolated, and outward K + currents were detected by whole‐cell patch‐clamp analysis, transmembrane potential was determined by flow cytometry. Normal human gingival fibroblasts (NHGFs) were transfected with KCNQ1 adenovirus or treated with KCNQ1 selective agonist ML277 and antagonist chromanol 293B. Accumulation of Extracellular Matrix (ECM) was measured by Western blotting and Sircol Soluble Collagen Assay. Content of secreted TGF‐β1 was measured by ELISA. Active RAS pull‐down assay and cell immunofluorescence were utilized to verify RAS activation. Results KCNQ1 was upregulated in gingival tissues derived from HGF patients and HGF gingival fibroblasts presented increased outward K + currents than NHGFs. Overexpression of KCNQ1, or KCNQ1 agonist ML277, promoted fibrotic responses of NHGFs. TGF‐β1 and KCNQ1 channels formed a positive feed‐back loop. ML277 generated lateral clustering and activation of Ras on plasma membrane, followed by augmented MAPK/AP‐1 signaling pathway output. JNK or ERK1/2 inhibitors suppressed ML277‐induced AP‐1 and ECM upregulation. Conclusion Activation of KCNQ1 potassium channel promoted fibrogenic responses in NHGFs via Ras/MAPK/AP‐1 signaling.

Gao, Qian↗
DOE OSTI2024

Magnesium Oxide Reduces Anxiety-like Behavior in Mice by Inhibiting Sulfate-Reducing Bacteria

The gut microbiota–brain axis allows for bidirectional communication between the microbes in our gastrointestinal (GI) tract and the central nervous system. Psychological stress has been known to disrupt the gut microbiome (dysbiosis) leading to anxiety-like behavior. Pathogens administered into the gut have been reported to cause anxiety. Whether commensal bacteria affect the gut–brain axis is not well understood. In this study, we examined the impact of a commensal sulfate-reducing bacteria (SRB) and its metabolite, hydrogen sulfide (H2S), on anxiety-like behavior. We found that mice gavaged with SRB had increased anxiety-like behavior as measured by the open field test. We also tested the effects of magnesium oxide (MgO) on SRB growth both in vitro and in vivo using a water avoidance stress (WAS) model. We found that MgO inhibited SRB growth and H2S production in a dose-dependent fashion. Mice that underwent psychological stress using the WAS model were observed to have an overgrowth (bloom) of SRB (Deferribacterota) and increased anxiety-like behavior. However, WAS-induced overgrowth of SRB and anxiety-like behavioral effects were attenuated in animals fed a MgO-enriched diet. These findings supported a potential MgO-reversible relationship between WAS-induced SRB blooms and anxiety-like behavior.

60 APPLIED LIFE SCIENCES↗
NASA NTRS1986

Low energy dislocation structures in epitaxy

The principle of minimum energy was applied to epitaxial interfaces to show the interrelationship beteen misfit, overgrowth thickness and misfit dislocation spacing. The low energy dislocation configurations were presented for selected interfacial geometries. A review of the interfacial energy calculations was made and a critical assessment of the agreement between theory and experiment was presented. Modes of misfit accommodation were presented with emphasis on the distinction between kinetic effects and equilibrium conditions. Two-dimensional and three-dimensional overgrowths were treated together with interdiffusion-modified interfaces, and several models of interfacial structure were treated including the classical and the current models. The paper is concluded by indicating areas of needed investigation into interfacial structure.

Van Der Merwe, Jan H.↗
DOE OSTI2022

Nanoscale trace-element zoning in pyrite framboids and implications for paleoproxy applications

Pyrite framboids (spherical masses of nanoscale pyrite) are among the earliest textures of pyrite to form in sediments. It has been proposed that their trace-element (TE) contents can be used to track the TE composition of the water column in which they formed. However, it is not clear how these TEs are associated with the framboidal pyrite grains. For instance, it is important to know whether they are incorporated uniformly or are enriched in different regions of the framboid. Here, we used high-resolution scanning transmission electron microscopy to identify chemical zoning within pyrite framboids. We found that initial, nanoscale pyrite euhedral crystals, which make up the volumetric majority of the framboids, are covered/infilled by later pyrite that templates on the earlier pyrite. Further, this later pyrite is enriched in TEs, suggesting that many TEs are incorporated in pyrite relatively late (during early diagenesis; not in the water column). This observation suggests that although chemical analyses of pyrite framboids may provide ocean-water chemistry trends through time, the details are complex. Specifically, the TEs found in pyrite may be linked to adsorption onto organic matter, detrital material, and authigenic minerals such as Fe- and Mn-oxide phases followed by desorption in the sediments or release via dissolution and incorporation into pyrite as overgrowths on the initial nanoscale euhedral crystals that make up framboids. While the use of pyrite chemistry to understand past ocean conditions remains promising, and even diagenetic additions may not preclude the utility of pyrite for reconstructing ancient ocean conditions, care must be taken in interpretations because the end concentration may be influenced by diagenesis.

58 GEOSCIENCES↗